目前以奈米粒子製作藍光電激發光元件，我們以有機材料作為host material，並當作電 洞傳輸層材料，另外以氧化鋅奈米粒子作為guest material，再搭配以低成本方式的旋轉塗佈 的相分離技術來實現藍光電激發光元件，這有別於以往利用昂貴的長晶設備才能達成藍光
則可以達到非反相式的波長轉換(none-inverted wavelength switch)。目前還需要被了解的 是，以反競爭效應所設計的波長轉換器能夠有多快、以及多有效率，針對這兩個問題，未 來需要再深入研究反競爭效應發生時的載子躍遷速率效率，以及載子分佈改變的幅度，以 預估所完成之波長轉換元件的表現。
六、參考資料
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White, "Zinc oxide nanowires and nanorods fabricated by vapour-phase transport at low temperature" Nanotechnology 15, 839 (2004).
[6] C. X. Xu, and X. W. Sun, "Field emission from zinc oxide nanopins," Appl. Phys. Lett., 83, 3806 (2003).
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[8] C. X. Xu, X. W. Sun, C. Yuen, B. J. Chen, and S. F. Yu, "Ultraviolet amplified spontaneous emission from self-organized network of zinc oxide nanofibers" Appl. Phys. Lett. 86, 86 (2005).
[9] X. W. Sun, S. F. Yu, C. X. Xu, C. Yuen, B. J. Chen, and S. Li, "Room-Temperature Ultraviolet Lasing from Zinc Oxide Microtubes" Jpn. J. Appl. Phys. 42, 1229 (2003).
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“Electroluminescent and transport mechanisms
of n-ZnO/p-Si heterojunctions” Appl. Phys. Lett. 88, 182112 (2006).
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[13] R. Könenkamp, R. Word, and M. Godinez, "Ultraviolet electroluminescence from ZnO/polymer heterojunction light-emitting diodes," Nano Lett., 5, 2005 (2005).
[14] M. Asada, M. Miyamoto, and Y. Suematsu, “Gain and the threshold of three dimensional quantum box lasers,” IEEE J. Quantum Electron., vol. 22, 1915, 1986.
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[16]T. Yang, S. Tsukamoto, J. Tatebayashi, M. Nishioka, Y. Arakawa, "Controlling The Uniformity of Self-Assembled InAs/GaAs Quantum Dot By A Combined GaAs/InGaAs Strained Buffer Layer," 2004 International Conference on Indium Phosphide and related Materials Conference Proceeding, TuB2-4, pp. 81-84, June, 2004
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[18]吳秉叡，"超寬頻高功率二極體"，國立台灣大學光電所碩士論文，六月，民國 89 年 [19] S. Coe, W. K. Woo, M. Bawendi, and V. Bulovic, "Electroluminescence from single monolayers of nanocrystals in molecular organic devices," Nature, 42, 800 (2002).
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計畫編號：NSC 93-2112-M-002-032 NSC 94-2112-M-002-009 NSC 95-2112-M-002-004 學門領域：光電及半導體物理 (none-inverted wavelength switch)。目前還需要被了解的是，以反競 爭效應所設計的波長轉換器能夠有多快、以及多有效率，針對這兩 個問題，未來需要再深入研究反競爭效應發生時的載子躍遷速率效 率，以及載子分佈改變的幅度，以預估所完成之波長轉換元件的表 技術說明 現。
英文：Both competition effect and anti-competition effect can be used in optical communication devices as the mechanism of wavelength switching. However, the signals obtained using the competition effect are the inverse of the original signals. This is not an ideal way. Using anti-competition effects, none-inverted wavelength switching can be achieved. In order to further estimate the performance of the finished wavelength switching devices using this mechanism, the carrier transition rate and the variation of the carrier distributions during the anti-competition processes should be studied.
可利用之產業及
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計畫編號：NSC 93-2112-M-002-032 NSC 94-2112-M-002-009 NSC 95-2112-M-002-004 學門領域：光電及半導體物理
技術說明 英文： The present invention discloses an electroluminescent element implemented by a zinc oxide nanoparticle-containing organic-inorganic composite film. In the present invention, a spin-coating technology together with a phase-segregation technology is used to fabricate zinc oxide nanoparticles and an organic electrically-conductive material into a layered organic-inorganic composite film, and an electroluminescent element is fabricated with the layered structure, which can increase the probability of the electron-hole pair recombination in zinc oxide nanoparticles. Thereby, the present invention can realize a low-cost blue light-emitting element having a large emitting area and an extensive application field.
可利用之產業
3. 此技術可直接使用 PLED (Polymer Lighting Emitting Diode)的設 備不需特殊的儀器。