[1]. H. W. Kroto, R. F. Curl, R. E. Smalley, et al., “C60: Buckminsterfullerene”, Nature, Vol.
318, pp. 162-163, 1985.
[2]. S. Iijima, “Helical microtubes of graphitic carbon”, Nature, Vol. 354, pp. 56-58, 1991.
[3]. S. Iijima, T. Ichihashi, “Single-shell carbon nanotubes of 1nm diameter”, Nature, Vol.
363, pp. 603-605, 1993
[4]. M. R. Falvo, G. J. Clary, et al., “Bending and bucking of carbon nanotubes under large strain”, Nature, Vol. 389, pp. 582-584, 1997.
[5]. E. W. Wong, P. E. Sheehan, and C. M. Lieber, “Nanobeam mechanics: elasticity, strength and toughness of nanorods and nanotubes”, Science, Vol. 227, pp. 1971-1975, 1997.
[6]. J. Hone, M. Whitney, C. Piscoti, and A. Zettl, “Thermal conductivity of single-walled carbon nanotubes”, Phys. Rev. B, Vol. 59, pp. R2514-R2516, 1999.
[7]. Georg, S. Duesberg, et al., “Growth of Isolated Carbon Nanotubes with Lithographically Defined Diameter and Location”, Nano Letters, Vol.3, No. 2, pp. 257-259, 2003.
[8]. Z. Yao, C. L. Kane, and C. Dekker, “High-field electrical transport in single-wall carbon nanotubes”, Phys. Rev. Lett., Vol. 84, pp. 2941-2944, 2000.
[9]. B. Q. Wei, R. Vajtai, and P. M. Ajayan, “Reliability and current carrying capacity of carbon nanotubes”, Appl. Phys. Lett., Vol. 79, pp. 1172-1174, 2001.
[10]. Teri Wang Odom, et al., “Atomic structure and electronic properties of single-walled carbon nanotubes”, Nature, Vol. 391, pp. 62-64, 1998.
[11]. W. Hoenlein, et al., “Carbon nanotubes for microelectronics: status and future prospects”, Materials Science and Engineering C. Vol. 23, pp. 663-669, 2003.
[12]. P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, “Carbon Nanotube Electronics”, Proceedings of The IEEE, Vol. 91, No. 11, 2003.
[13]. J. Appenzeller, J. Knoch, R. Martel, V. Derycke, S. J. Wind, and P. Avouris, “Carbon Nanotube Electronics”, IEEE Transactions on Nanotechnology, Vol. 1, No. 4, 2002.
[14]. J. Liu, X. Li, A. Schrand, T. Ohashi, L. Dai, “Controlled Syntheses of Aligned Multi-Walled Carbon Nanotubes: Catalyst Particle Size and Density Control via Layer-by-Layer Assembling”, Nano Lett., Vol. 17, No, 26, 2006.
[15]. M. S. Dresselhaus, et al., “Group theoretical concepts for carbon nanotubes”, Molecular Materials, Vol. 4, pp. 27-40, 1994.
[16]. J. Kong, et al., “Sythesis of Single Single-walled Carbon Nanotubes on Patterned Silicon Wafers”, Nature, Vol. 395, pp. 878-881, 1998.
[17]. W. Hoenlein, “New Prospects for Microelectronics: Carbon Nanotubes”, Jpn. J. Appl.
Phys., Vol. 41, pp. 4370-4374 Part1, No.6B, 2002.
[18]. A. Naeemi, R. Sarvari, and J. D. Meindl, “Performance Comparison Between Carbon Nonotube and Copper Interconnects for Gigascale Integration”, IEEE Electron Device
Letters, Vol. 26, pp. 84-86, No. 2, 2005.
[19]. Andereas Thess, et al., “Crystalline Ropes of Metallic Carbon Nanotubes”, Science, Vol.
273, pp. 483-487, 1996.
[20]. T. W. Ebbesen, P. M. Ajayan, “Large-scale synthesis of carbon nanotubes”, Nature, Vol.
358, pp. 220-222, 1992.
[21]. H. T. Soh, et al., “Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes”, Appl. Phys. Lett., Vol.75, pp. 627-629, 1999.
[22]. G. Zhang, X. Wang, X. Li, Y, Lu, Ali Javey, and Hongjie Dai, “Carbon Nanotubes: From Growth, Placement and Assembly Control to 60 mV/decade and Sub-60 mV/decade Tunnel Transistors”, IEDM, 2006.
[23]. Y. Zhang, et al., “Electric-field-directed growth of aligned single-walled carbon nanotubes”, Appl. Phys. Lett., Vol. 79, 2001.
[24]. A. Ural, Y. Li, and H. Dai, “Electric-field-aligned growth of single-walled carbon nanotubes on surfaces”, Appl. Phys. Lett., Vol. 81, 2002.
[25]. S. Han, X. Liu, and C. Zhou, “Template-Free Directional Growth of Single-Walled Carbon Nanotubes on a- and r-Plane Sapphire”, J. Am. Chem. Soc., Vol. 127, 2005.
[26]. Y. M. Li, et al., “Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method”, Nano Lett., Vol. 4, 2004.
[27]. S. Huang, M. Woodson, R. Smalley, J. Liu, “Growth Mechanism of Oriented Long Single Walled Carbon Nanotubes Using "Fast-Heating" Chemical Vapor Deposition Process”, Nano Lett., Vol. 4, 2004.
[28]. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris, “Single-and multi wall carbon nanotube field-effect transistors”, Appl. Phys. Lett., Vol. 73, pp. 2447-2449, 1998.
[29]. S. J. Tans, A. R. M. Verschueren, and C. Dekker., “Room-temperature transistor based on a single carbon nanotube”, Nature, Vol. 393, pp. 49-52, 1998.
[30]. M. H. Yang, K. B. K. Teo, L. Gangloff, and W. I. Milne, “Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors”, Appl. Phys. Lett., Vol. 88, 2006.
[31]. Ali Javey, H. Kim, H. Dai, et al., “High-k dielectrics for advanced carbon-nanotube transistors and logic gates”, Nature Materials, Vol. 1, 2002.
[32]. Ali Javey, Jing Guo, Q. Wang, M. Lundstrom, and H. Dai, “Ballistic carbon nanotube field-effect transistors”, Nature, Vol. 424, 2003.
[33]. Yu-Chin Tseng, K. Phoa, D. Carlton, and J. Bokor, “Effect of Diameter Variation in a Large Set of Carbon Nanotube Transistors”, Nano Lett., Vol. 6, 2006.
[34]. Yi-Che Lee, “Impact of Schottky Barrier on Carbon Nanotube FETs and Thin-Film Transistors”, Department of Electronics Engineering Institute of Electronics National Chiao Tung University, 2005.
[35]. Z. Chen, J. Appenzeller, J. Knoch, Y.-M Lin, P. Avouris, “The Role of Metal-Nanotube
Vol. 5, No. 7, 2005.
[36]. R. Martel, et al., “Ambipolar electrical transport in semiconducting single-wall carbon nanotubes”, Phys. Rev. Lett., Vol. 87, No. 25, 2001.
[37]. Yu-Ming Lin, Joerg Appenzeller, Phaedon Avouris, “Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering”, Nano Lett., Vol. 4, No.
5, 2004.
[38]. J. Appenzeller, Yu-Ming Lin, J. Knoch, Z. Chen; P. Avouris, “Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design”, IEEE Transactions on Electron Devices, Vol. 52, No. 12, 2005.
[39]. Ali, Javey, et al., “Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-k Gate Dielectrics”, Nano Lett., Vol. 4, No. 3, 2004.
[40]. Yu-Ming Lin, J. Appenzeller, Z. Zhihong, P. Avouris, et al., “High-performance dual-gate carbon nanotube FETs with 40-nm gate length”, IEEE Electron Device Letters, Vol. 26, No. 11, 2005.
[41]. J. Appenzeller, Yu-Ming Lin, J. Knoch, P. Avouris, “Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors”, Phys. Rev. Lett., Vol. 93, No. 19, 2004.
[42]. Jia Chen, Christian Klinke, Ali Afzali, and Phaedon Avouris, “Self-aligned carbon nanotube transistors with charge transfer doping”, Appl. Phys. Lett., Vol. 86, 2005.
[43]. P. Avouris, “Electronics and Optoelectronics with Single Carbon Nanotubes”, SSDM, pp.
4-5, 2005.
[44]. R. Saito, G. Dresselhaus, M. S. Dresselhaus, “Trigonal warping effect of carbon nanotubes”, Physical Review B, Vol. 61, No. 4, 2000.
[45]. Jijun Zhao, Jie Han, Jian Ping Lu, “Work functions of pristine and alkali-metal intercalated carbon nanotubes and bundles”, Physical Review B, Vol. 65, 2002.
[46]. Yosuke Nosho, Yutaka Ohno, Shigeru Kishimoto, and Takashi Mizutani, “n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes”, Appl. Phys.
Lett., Vol. 86, 2005.
[47]. Satoru Suzuki, Yoshihiro Kobayashi, “Conductivity Decrease in Carbon Nanotubes Caused by Low-Acceleration-Voltage Electron Irradiation ”, Japanese Journal of Applied Physics, Vol. 44, No. 49, 2005.
[48]. Satoru Suzuki, Kenichi Kanzaki, Yoshikazu Homma, Shin-ya Fukuba,
“Low-Acceleration-Voltage Electron Irradiation Damage in Single-Walled Carbon Nanotubes”, Japanese Journal of Applied Physics, Vol. 43, No. 8, 2004.
[49]. Guangyu Zhang, Pengfei Qi, Xinran Wang, Yuerui Lu, Xiaolin Li, Ryan Tu, Sarunya Bangsaruntip, David Mann, Li Zhang, Hongjie Dai, ”Selective Etching of Metallic Carbon Nanotubes by Gas-Phase Reaction”, Science, Vol. 314, November, 2006.
[50]. Christian Klinke, James B. Hannon, Ali Afzali, Phaedon Avouris, “Field-Effect Transistors Assembled from Functionalized Carbon Nanotubes”, Nano Lett., Vol. 6, No.
5, 2006.
[51]. Jeffrey L. Bahr, Jiping Yang, Dmitry V. Kosynkin, Michael J. Bronikowski, Richard E.
Smalley, James M. Tour, “Functionalization of Carbon Nanotube by Electrochemical Reduction of Ary1 Diazonium Salts: A Bucky Paaper Electrode”, J. Am. Chem. Soc., Vol.
123, No. 27, 2001.
[52]. Chien-Li Weng, “A study on Contact Resistance and Electric Field Effect of Carbon nanotubes”, Department of Electronics Engineering Institute of Electronics National Chiao Tung University, 2004.
[53]. Chin-Lien Chang, “A study on the Contact Property of Metal/Carbon nanotubes”, Department of Electronics Engineering Institute of Electronics National Chiao Tung University, 2003.
[54]. Bing-Yue Tsui, Chien-Li, Chin-Lien Chang, Jeng-Hua Wei, Ming-Jinn Tsai, “Effect of Oxygen Absorption on Contact Resistance between Metal and Carbon Nanotubes”, VLSI-TSA conference, 2006.
[55]. Y. Zhang, Hongjie Dai, “Formation of metal nanowires on suspended single-walled carbon nanotubes”, Appl. Phys. Lett., Vol. 77, pp. 3015-3017, 2000.
[56]. Y. Zhang, Nathan W. Franklin. Robert J. Chen, Hongjie Dai, “Metal coating on suspended carbon nanotubes and its implication to metal-tube interaction”, Chem. Phys.
Lett., Vol. 331, pp. 35-41, 2000.
[57]. R. Martel, et al., “Ambipolar electrical transport in semiconducting single-wall carbon nanotubes”, Phys. Rev. Lett., Vol. 87, No. 25, 2001.
[58]. David Mann, Ali Javey, Jing Kong, Qian Wang, Hongjie Dai, “Ballistic Transport in Metallic Nanotubes with Reliable Pd Ohmic Contacts”, Nano Lett., Vol. 3, No. 11, 2003.
[59]. R. Saito, G. Dresselhaus, M. S. Dresselhaus, “Trigonal warping effect of carbon nanotubes”, Physical Review B, Vol. 61, No. 4, 2000.
[60]. R. Saito, T. Takeya, T. kimura, G. Dresselhaus, M. S. Dresselhaus, “Raman intensity of single-wall carbon nanotubes”, Physical Review B, Vol. 57, No. 7, 1998.
[61]. A. Jorio, R. Saito, J. H. Hafner, c, M. Hunter, T. McClure, G. Dresselhaus, M. S.
Dresselhaus, “Strucrure (n,m) Determination of Isolated Single-walled Carbon Nanotubes by Resonant Raman Scattering”, Physical Review Letters, Vol. 86, No. 6, 2001.
[62]. A. Jorio, A. G. Souza Filho, G. Dresselhaus, M. S. Dresselhaus, A. K. Swan, M. S. Unlu, B. B. Goldberg, M. A. Pimenta, J. H. Hafner, J. H. Hafner, R. Saito, “G-band resonant Raman study of 62 isolated single-wall carbon nanotubes”, Physical Review Letters, Vol.
65, pp. 155412, 2002.
[63]. Sheng-Ming Shiue, “A study on the Hysteresis effect of CNTFET”, Department of Electronics Engineering Institute of Electronics National Chiao Tung University, 2005.
[64]. J.-M. Bethoux, H. Happy, G. Dambrine, V. Derycke, M. Goffman, J.-P. Bourgoin, “An 8-GHz carbon nanotube field-effect transistor for gigahertz range applications”, IEEE
[65]. Jing Guo, S. Hasan, A. Javey, G. Bosman, M. Lundstrom, “Assessment of high-frequency performance potential of carbon nanotube transistors”, IEEE Transactions on Nanotechnology, Vol. 4, No. 6, 2005.