Interplanar Spacing in a Simple Cubic
Interplanar Spacing in a Simple Cubic
Lattice
Lattice
1
35 35
Diffraction in TEM
Diffraction in TEM
Reinforced conditionsReinforced conditions nλnλ = 2d sin θ= 2d sin θ
Miller index notation is used for Miller index notation is used for definingdefining crystalographiccrystalographic planes and planes and directions, e.g., for simple cubic directions, e.g., for simple cubic crystal
crystal
By convention for e-By convention for e-diffraction usediffraction use
11stst order n=1 and, e.g., 2order n=1 and, e.g., 2ndnd order order use multiple Miller indices.use multiple Miller indices.
22ndnd order (n = 2) from a plane (131) order (n = 2) from a plane (131) can be called the 1can be called the 1stst order order diffraction from a plane (262).
diffraction from a plane (262).
Bragg
Bragg’’s law can be then s law can be then λλ = 2d sin θ= 2d sin θ
Significance of
Significance of θθ angle at eangle at e-diffraction-diffraction
For 100 keVFor 100 keV, , λλ = 0.0037 nm; for Al = 0.0037 nm; for Al crystal d = 0.4nmcrystal d = 0.4nm…… sinsinθθ = = 0.0046
0.0046……θθ= 0.26.5= 0.26.5oo. Hence λ. Hence λ = 2d θ= 2d θ or λor λ/d = 2 /d = 2 θθ
2 2
2 k l
h d
hkla
+
= +
E-beam strongly diffract only from planes of atoms almost being parallel to e-beam.
Diffraction Planes in TEM
Diffraction Planes in TEM
Back focal plane of objective Objective
Back focal plane of post specimen lens
37 37
Formation of Diffraction Patterns in TEM
Formation of Diffraction Patterns in TEM
For small diffraction angle For small diffraction angle
Combining with eq. Combining with eq. λ λ / / d = 2 d = 2 θ θ
LL
λλ - - camera constant camera constant
LL – – camera length is not physical distance camera length is not physical distance but notional adjusted by operator.
but notional adjusted by operator.
Distance Distance g g of diffraction spot is inversely of diffraction spot
is inverselyproportional
proportional
to to d d spacing spacing
θ
= 2 L g
λ λ
L d
g d or
L
g = =
Crystal
with spacing d
Diffraction Pattern and Reciprocal Lattice Diffraction Pattern and Reciprocal Lattice
g = g ∝
α
39 39
Ewald
Ewald Sphere Construction
Sphere ConstructionFormal demonstration
Formal demonstration between between the reciprocal lattice and
the reciprocal lattice and diffraction pattern
diffraction pattern
a) a)
Diffraction crystalDiffraction crystal
––
presentedpresented by its reciprocal lattice
by its reciprocal lattice
b) b)
EE
--
beam is presented by abeam is presented by a vector
vector 1/λ
1/
λ, parallel to the beam, parallel to the beam direction, and terminating at the
direction, and terminating at theorigin of the reciprocal lattice
origin of the reciprocal latticec) c) Sphere of radius 1/ Sphere of radius 1/ λ is drawn λ is drawn about A.
about A.
Ewald
Ewald sphere passes through a sphere passes through a reciprocal lattice point, a
reciprocal lattice point, a distance 1/d from the origin.
distance 1/d from the origin.
From geometry From geometry
θ λ λ
θ λ 2 sin
2 /
2 /
sin 1 or d
d
d = =
=
Diffraction occurs when the Ewald sphere touches a
reciprocal lattice point
Material structure can be inferred from analyzing numerous specimen tilts.
A SAD Pattern from a single crystal consists of a regular array of diffraction spots.
Miller indices can be found by a ratio technique. For a cubic crystal
Ratio ofg
squares gives a ratio of theΣ
of the squares of the plane’s indices.
Spacing of the plane producing diffraction spots can be found fromg
hkl=λL/d
hkl
Angle between any two diffracting vectors is identical to the angle between corresponding planes.
Single Crystal: SAD Pattern Single Crystal: SAD Pattern
( ) ( )
( ) ( )
g h k l
for two difraction vectors g
g
h k l
m n o
hkl
hkl mno
2 2 2 2
2 2
2 2 2
2 2 2
∝ + +
= + +
+ +
41 41
Conventional TED Patterns:
Conventional TED Patterns:
SAD from Different Structures SAD from Different Structures
Conventional TED pattern
Amorphous: Series of diffused concentric rings.
Polycrystalline: Sharp concentric rings.
Single crystal: Regular spot TED pattern.
Monocrystalline.
Then structural analysis can be carried out.
In amorphous matrix, the
positions of atoms are not
normally required.
Experimental Conditions for TED Patterns Experimental Conditions for TED Patterns
Specimen area must be flat and horizontal in themicroscope.
This area must be at the unique height at which tilting the sample will not causemoving the image - minimizes any distortion in diffraction pattern produced by e-optics.
TED pattern should contain as many complete rings aspossible - for accurate measurement - large SAD aperture.
At least 6 innermost rings.
Ring diameter should bemeasured along one diameter.
43 43
Analysis: Polycrystalline Diffraction Pattern
Analysis: Polycrystalline Diffraction Pattern
Measure radii of the rings g
1, g
2, g
3, etc.
Calculate the d spacing d
1, d
2, d
3, etc of planes, give rise to rings g
1, g
2, g
3, etc. from eq. d = Lλ/g
d spacing obtained identify with cross-referring data to those tabulate in X-ray diffraction files, which list the spacing of thousands of
materials.
Not all plane diffract – depends on the structure factor, which must be calculated If it is 0 – plane does not diffract. For some crystals the
structure factor rules are simple.
For face-centered cubic crystal diffract only when Miller indices are unmixed, i.e., odd or even.
For body centered diffraction - only h+k+l is even.
Analysis: Polycrystalline Diffraction Pattern
Analysis: Polycrystalline Diffraction Pattern
g measured from the pattern, we need to match the crystal planes to the rings (index the rings)
Since g is inversely proportional to d, the innermost ring has largest d spacing.
(*)
Considering all possible values of h,k, and l a possible series of increasing g values would be the sequence 100, 110, 111, 200, 210, 211, 220, 311, etc
The structure factor rules tell us that for Au, face centered cubic material h, k, l must be unmixed and therefore rings 100 110, 210 and 211 will not appear and sequence of the ring must be 111, 200, 220, 311, etc
Even without knowing the camera constant we can check this by measuring the ratios of the radii g2/g1, g3/g1etc and comparing them with ratios calculated from equation (*)) ( h
2k
2l
2a
L d
g = L λ = λ + +
45 45
Energy Dispersive X
Energy Dispersive X - - ray Spectroscopy in TEM ray Spectroscopy in TEM
EDS for compositional analysis.
X-ray produced specific to chemical element.
Number of photons per increment path dt: IAdt = nAZA dt.
For two components A and B of specimen (< 10 nm)IA/IB = nAZA/nBZB
ZA,B - atomic correction number standard or standardless
Intensity measured with a solid state detector.
Sensitivity 0.2 atomic %.
Spatial resolution ~10 nmEnergy Dispersive X
Energy Dispersive X - - ray Spectroscopy in TEM ray Spectroscopy in TEM
Cross-sectional bright field image - an electronic device
EDS analysis of ~ 150 nm nanometers thick TiSi2metalization layer shows stoichiometric composition.
High spatial resolution (<10 nm) - interaction volume is limited by the specimen thickness
Peaks are resolved well from the background.
47 47