At first, the oxide of the RRAM can be made thicker. The oxide layer in this work is 5 nm, which is too thin to observe the radiation damage effect, as discussed in chapter 3. Second, we realize that the RRAM used in the EUV experiment is not as
47
good performance as the RRAM fabricated by industry, especially for the endurance performance. Therefore, high performance RRAM should be used to double confirm the results in this work. Besides, the sample size in this thesis is too small. More devices should be tested. Furthermore, the failed cells in the endurance test can be tested in the test of retention performance first. Thus, we can find that whether the cell has endurance degradation also has the stored state lost issue, confirming more clearly the reason for the endurance degradation. On the other hands, stress test after irradiation with the voltage in normal switching process should be studied. By this test, we can also confirm the mechanism of endurance degradation after irradiation. Finally, the MIM structure of Hafnium oxide-based should also be tested. Because the measurement of MIM capacitor can know the trap in the oxide layer, it is able to clarify the radiation damage effect on the MIM capacitor.
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