5-1 Conclusions
In this dissertation, we have employed advanced high-κ materials to replace conventional low-temperature deposited oxide as the gate dielectric and fabricated high-performance low-temperature thin film transistors. contrast, the HfSiOx films exhibit better thermal stability and still keep the amorphous structure after high temperature annealing. Moreover, the presence of unwanted interfacial layer with lower κ value always exists between the thin high-κ gate dielectric and Si substrate. For the advanced MOSFETs application, deliberate surface treatments have to be done to suppress the interfacial layer growth in an effort to achieve lower EOT value by using these high-κ films.
Furthermore, we applied these high-κ materials to replace the conventional SiO2 gate dielectric of LTPS TFTs and studied their impacts on the performance in chapter 3.
We found that higher performance p-channel poly-Si TFTs using hafnium-silicate gate dielectric was obtained with low-temperature-compatible processing. Higher Ion/Ioff
current ratio, smaller subthreshold swing, lower threshold voltage and higher mobility than those with conventional deposited-SiO2 gate dielectric were achieved at lower operation voltages. Our results suggest that HfSiOx is a potential candidate for the
gate-dielectric material of future high-performance poly-Si TFTs.
Finally, the mechanisms of mobility degradation and leakage current of poly-Si TFTs incorporating high-κ gate dielectrics were investigated in chapter 4. The lower mobility of HfO2 TFTs was attributed to the additional scatterings, such as trapped charges, fixed charges, soft phonons, and crystallization, etc. However, using HfSiOx films can significantly eliminate these additional scatterings and achieve better mobility because of the higher thermal stability and better inherent properties. Nevertheless, high-κ gate dielectrics would lead higher electric field and induce severe GIDL current of poly-Si TFTs. The temperature instability and NBTI tests were also executed for the reliability characterization. We found that using high-κ gate dielectrics can not only enhance the performance of poly-Si TFTs but also improve their reliability over those incorporating conventional deposited-SiO2.
5-2 Future Prospects
Although many aspects and topics have been covered in our study, there are still several interesting works that could be organized and executed.
(1) The optimization of LTPS TFTs using high-κ gate dielectrics: The high-κ TFTs were fabricated successfully in our study and exhibited better performance than the sample with deposited-SiO2 gate dielectric. However, the characteristics of high-κ TFTs can be optimized by using more advanced methods and new structures. For example, better quality of poly-Si channel could be achieved by excimer laser annealing, which has been widely used in mass-production. As expected, enhancing the quality of deposited poly-Si films by laser annealing can bring about superior performance of high-κ TFTs. Also, as mentioned in the literature, high-κ gate dielectrics would lead higher electric field and induce severe GIDL current of poly-Si TFTs. The adoption of lightly doped drain (LDD), multi-gate, and offset
structures, which can reduce the electrical field between the drain and the channel of the TFT, can be applied to suppress the deterioration of the off-state current when high-κ dielectrics are employed as gate dielectrics. Furthermore, high-κ materials with thermally-stable amorphous structure and higher κ value or the high-κ stack films also could be utilized to decrease the EOT and enhance the device performance. Finally, to accomplish the entire processing of the poly-Si TFTs in low-temperature, the metal gate and low-temperature activation methods have to be employed to achieve the goal.
(2) The fabrication of low-temperature poly-Ge TFTs: First successful deposition of pure poly-Ge film was deposited successfully onto SiO2-covered Si substrates using ICP-CVD techniques in appendix. However, the fabrication of TFTs using poly-Ge films as the channel has not been accomplished yet. Several key issues have to be overcome in the process of poly-Ge TFTs in future. Firstly, the crystallinity of poly-Ge could be modified by other methods, such as laser crystallization and metal-induced lateral crystallization, which have been already employed in the preparation of poly-Si films. And then, more attentions have to be paid to the behaviors of dopant activation at the contact and junction regions. Furthermore, high-κ gate dielectrics also could be utilized to enhance the device performance.
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