Results and Discussion
6.2 Future Work
Besides double-gate MOSFET and SOI, there are still many structures of devices. In thesis, we discuss these two structures because of similarity in structure. Recently, ultra thin barrier device is proposed. Its structure is between double-gate and SOI MOSFET. On the other hand, double-gate structure will become single gate if we set thickness of bulk thicker and only one gate in our condition. In terms of structure, we can discuss several kinds of structures or characteristics of devices at the same time to make formula more general. By experience in this thesis, model more general may lose accuracy. Here, we only consider those direct outer conditions as regressor variables. Transformation of regressor variables may be important and efficient factors. Besides, we only use the most popular model -linear regression model. Advanced model may arise better results for more complicated data.
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