Future work

We have successfully found some characteristics of the multi-GaAs:O PC antenna in the thesis. According to the property of higher output THz power, it is suitable to use as an emitter which can generated CW THz radiation by using

photomixing process. It will be researched in next step. In the result of THz frequency domains, the bandwidth of GaAs:O antennas is not broader than LT-GaAs. But it can be improved by optimizing the conditions of implant dosage and annealing temperature for high frequency purpose, or we can try to adopt other antenna structures to increase the bandwidth. Besides, the material of multi-GaAs:O needs to be measured by femto-second pump-probe system for study the carrier dynamics. We can calculate the exact carrier life time of material which can help us to improve the emission properties.

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