(rpm)
Voc (V)
Jsc (mA/cm2)
PCE (%)
FF
(nm) 1000 0.85 -8.3 4.5 0.63 130 1200 0.86 -10.4 4.8 0.55 115 1400 0.85 -10.7 5.0 0.55 103 1600 0.84 -10.5 4.5 0.51 86
3-24 PTTTBO PCBM J-V
- 69 -
PTHBO pre-anneal 20
J-V 4-25
PTTTBO PCBM Voc (V)
Jsc (mA/cm2)
PCE (%)
FF
None anneal 0.85 -10.7 5.0 0.55 90oC 0.85 -11.5 5.1 0.52 100oC 0.85 -11.6 5.3 0.54 110oC 0.85 -11.1 4.7 0.50
3-25 PTTTBO PCBM J-V
90 110oC 20 100oC
5.3 % PTHBO PTTTBO FF
PTTTBO
- 70 -
PCBM
FF AFM ( 3-26)
Rms 3.3 nm 1.0 nm
height phase
3-26 AFM (a) none anneal (b) pre-anneal
3-27 EQE PTHBO
PTTTBO
- 71 -
PTTTBO 580 nm 60 % 3-6 PBTTBO
PTHBO PBTTBO PTTTBO EQE
8.6 mA/cm2 7.5 mA/cm2 11.1 mA/cm2
3-27 EQE
4 % Voc Jsc FF
BO
- 72 -
3-2-3 PCyTBO PCySiTBO PCyNTBO
N
PCyTBO PCyNTBO J-V
3-28 3-29
- 73 -
PCyTBO PCBM Voc
(V)
Jsc (mA/cm2)
PCE (%)
FF
(nm) PCyTBO:PCBM
1:2 0.63 -8.0 2.8 0.56 85 Anneal
at 100oC 0.64 -7.4 2.4 0.50 95 0.5%CN 0.63 -8.6 3.0 0.56 87
1%CN 0.62 -8.6 2.8 0.52 87
3 -28 PCyNTBO PCBM J-V
- 74 -
3-29 PCyNTBO PCBM J-V
PCyTBO 1 2 90 nm
CN 8.0 mA/cm2 8.6 mA/cm2
AFM ( 3-30) height phase
- 75 -
Rms 0.89 nm 1.03 nm
3-30 PCyTBO AFM (a) (b) 0.5%CN
TEM TEM ( 3-31)
TEM PCBM cluster
TEM PCBM
- 76 -
3-31 PCyTBO TEM
PCyNTBO 1 1 90 nm
0.5%CN PCyTBO
HOMO Voc 0.5 V
AFM ( 3 -32) PCyTBO
Rms
TEM TEM ( 3-33)
PCyNTBO PCyTBO
1.0 % 1.2 %
TEM
- 77 -
3-32 PCyNTBO AFM (a) (b) 0.5%CN
3-33 PCyNTBO TEM
PCyTBO PCyNTBO PCySiTBO
HOMO Voc Jsc XRD
FF Si thiophene
PCySiTBO
- 78 -
DCB
J-V 3-34
PCySiTBO PCBM Voc (V)
Jsc (mA/cm2)
PCE (%)
FF
(nm) 1:1 0.68 -9.2 4.0 0.64 101 1:2 0.68 -5.2 2.2 0.63 108 1:3 0.70 -3.3 1.4 0.61 94
3-34 PCySiTBO PCBM J-V
1 1
PCySiTBO Voc
Jsc FF AFM( 3-35)
- 79 -
Rms 0.96 nm 2.81 nm
3-35 AFM (a) 1:1 (b) 1:2(c) 1:3
TCB CB 1 1
J-V 3-36
- 80 -
PCySiTBO PCBM Voc (V)
Jsc (mA/cm2)
PCE (%)
FF
DCB 0.68 -9.2 4.0 0.64 TCB 0.70 -6.1 2.2 0.51 CB 0.70 -4.1 1.3 0.45
3-36 PCySiTBO PCBM J-V
DCB
AFM ( 3-37) CB phase
TCB phase
DCB Rms TCB TCB
TCB
- 81 -
3-37 PCySiTBO PCBM AFM
CN DIO
J-V 3-38
3-39
- 82 -
PCySiTBO PCBM CN
Voc (V)
Jsc (mA/cm2)
PCE (%)
FF
None 0.68 -9.2 4.0 0.64 0.5%CN 0.67 -10.0 4.1 0.61 1%CN 0.68 -9.2 4.2 0.67 2%CN 0.68 -9.5 4.3 0.66
3-38 PCySiTBO PCBM CN J-V
- 83 -
PCySiTBO PCBM DIO
Voc
3-39 PCySiTBO PCBM DIO J-V
CN
DIO CN
CN DIO DIO
DIO
DIO 2% 9.15 mA/cm2 10
- 84 -
mA/cm2 4.0 % 4.7 % AFM ( 3-40)
Rms height phase
DIO PCBM
TEM PCyTBO
TEM ( 3-41) TEM
PCBM
PCBM
- 85 -
3-40 PCySiTBO PCBM DIO AFM
- 86 -
3-41 PCySiTBO TEM 2%DIO
PCBM Bis-PCBM ThCBM PCBM
Voc Jsc J-V 3-42
Bis-PCBM LUMO Voc
0.8 V PCBM
42 PCBM
AFM ( 3-43) phase Rms
PCBM Bis-PCBM
ThCBM PCBM AFM ( 3-43)
- 87 -
PCySiTBO fullerene Voc
(V)
Jsc (mA/cm2)
PCE (%)
FF
PCBM 0.66 -10.8 4.7 0.66 Bis-PCBM 0.80 -7.6 2.8 0.45 ThCBM 0.65 -10.7 4.1 0.60
3-42 PCySiTBO fullerene J-V
- 88 -
3-43 PCySiTBO fullerene AFM
PC71BM ICBA C70
C60 ICBA
LUMO Voc
J-V 3-44
- 89 -
PCySiTBO fullerene Voc
(V)
Jsc
(mA/cm2)
PCE (%)
FF
PC71BM 0.64 -6.7 2.3 0.53 PC71BM 2%DIO 0.64 -13.8 5.0 0.57 ICBA 0.87 -3.2 1.4 0.50 ICBA 2%DIO 0.84 -5.0 1.8 0.43
3-44 PCySiTBO fullerene J-V PC71BM ICBA
2% DIO PC71BM DIO
AFM( 3-45) TEM(
3-46) AFM height
TEM
- 90 -
3-45 PCySiTBO PC71BM AFM
3-46 PCySiTBO PC71BM TEM
ICBA PCBM PC71BM Voc
AFM ( 3-47)
Rms 4.3 nm 1.91 nm phase
- 91 -
3-47 PCySiTBO ICBA AFM
400 500 600 700 800
0 20 40 60 80
EQE (%)
Wavelength (nm)
PCySiTBO/PC
61BM PCyTBO/PC
61BM PCyNTBO/PC
61BM PCySiTBO/PC
71BM
3-48 EQE
- 92 -
3-48 EQE PCySiTBO
PCBM PC71BM 350 nm 450 nm
EQE PCyTBO
PCySiTBO PCyNTBO EQE 8.2 mA/cm2
10.2 mA/cm2 4.9 mA/cm2
PCySiTBO PC71BM
2%DIO 5 %
- 93 -
p-n
benzooxadiazole, BO
N
AFM TEM
PBDTBO (Mn=62kg mol-1)
HOMO DCB PCBM 1 1
Voc 0.86 V Jsc 10.4 mA cm-2 FF
0.64 5.7 %
PTHBO PBTTBO PTTTBO
HOMO PBTTBO PTTTBO
DCB PCBM 1 1 PTHBO
100oC 20 4.5 % Voc 1.02 V Jsc
9.0 mA cm-2 FF 0.49 PBTTBO 1%CN
4.3 % Voc 0.73 V Jsc 8.0 mA cm-2 FF 0.73 PTTTBO
- 94 -
100oC 20 Voc 0.85 V Jsc 11.6
mA cm-2 FF 0.54 5.3 %
PCyTBO
PCySiTBO PCyNTBO (300 700 nm)
PCyTBO PCBM 1 2 DCB
0.5%CN 3.0 % Voc 0.63 V Jsc 8.6 mA
cm-2 FF 0.56 PCyTBO PCBM DCB 1 1
0.5%CN 1.2 % Voc 0.85 V Jsc
5.1 mA cm-2 FF 0.40 PCySiTBO PC71BM 1 1
DCB 2%DIO 5.0 % Voc
0.64 V Jsc 13.8 mA cm-2 FF 0.57
- 95 -
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