• 沒有找到結果。

Summary

在文檔中 中 華 大 學 (頁 76-83)

Chapter 3 Results and Discussion

3.6 Summary

Chapter 4 Conclusions and Future Work

4.1 Conclusions

Predicting the improve the efficiency in this paper, we succeeded in improving two of the key factors to texture structure and electroless plating.

The objectives of this thesis are to study roughness of the surface and the anti-reflection layer technique for single crystal silicon solar cell. The design of solar cell surface roughness texture is a necessary step. For incident light get multiple reflections, various applications, enlarging light access area and increase the possibility for light absorbing.

The p-type silicon wafer as a substrate, phosphorus diffusion 30 minutes at high temperature furnace diffusion process to make single-crystal silicon solar cell p-n junction. This sample the ISC =133.928 mA, VOC =0.500 V ,and evaluated fill factor (FF)

=41.499%, efficiency (η) =7.282%. Phosphorus diffusion 40 minutes at high temperature furnace diffusion, this sample the ISC =143.449 mA, VOC =0.550 V ,and evaluated fill factor (FF) =39.411 %, efficiency (η) =8.148%.

Contrary pyramid sink structure is the best light sealed for safekeeping design and extensively using at high efficiency single crystal solar cell fabrication.

P-type(100)silicon is to be the base and to go on anisotropy wet etching in KOH solution that will get contrary Pyramid sink structure. To study KOH etching rates in the heating temperature 75 ~ 80 ℃ and surface textured 20 minutes. The ISC =43.873 mA, VOC =0.45 V ,and evaluated fill factor (FF) =41.287%, efficiency (η) =8.151%. Surface textured 30 minutes, the ISC =39.519 mA, VOC =0.520 V ,and evaluated fill factor (FF) =47.915%, efficiency (η) =9.847 %.

We have developed a simple method using complexing agent to synthesize Ni/Cu nanoparticles in ambient condition. the ISC =45.459 mA, VOC =0.540V ,and evaluated fill factor (FF) =56.248%, efficiency (η) =13.808 %.

Finally, we discussed the result what we got to find out the rule: the relationship between the chemical plating, , we can get a lower efficiency . Because the shunt resistance Rsh should be as high as possible to avoid leakage of carriers back across the junction. So we have to do to improve, we could get a better efficiency (η).

4.2 Future Work

Although in the industry use of AR coating or etching of various ways to change the reflectivity of incident light to enhance the conversion of solar, but the paper chemical plating process, simplicity and low cost, also easy to control coating thickness.

In the follow-up of the future, all the lack of response to future energy development and the next generation of energy, conversion efficiency of solar cells there is still much room for progress, I believe the future of the people for the development of alternative energy, solar cells must be the best choice.

References

[1] A. W. Blakers, A. Wang, A. M. Miline, J. Zhao, and M. A. Green, “22.8%

efficiency silicon solar cell,” Applied Physics Letters, vol. 55, no.13, pp. 1363-1365, 1989.

[2] M. A. Green, Solar Cells: Operating Principles, Technology and System Applications, Prentice-Hall, New Jersey, 1982.

[3] Text partly copied from NREL’s informative homepage: http://www.nrel.gov/solar.

[4] Martin A. Green, K. Emery, Y. Hishikawa and W. Warta, “Solar cell efficiency tables (Version 33),” Progress in Photovoltaics : Research and Applications, vol.17, pp. 85-94, 2009.

[5] G. P. Smestad, “The basic economics of photovoltaics,” Optical Society of America, 2008.

[6] S. S. Chen, “Effects of antireflection coating and prismatic cover on Ⅲ-Ⅴ solar cell’s performance,” M. S. Thesis, CYCU, Taiwan, R.O.C., 2005.

[7] 林明獻,太陽電池技術入門(修訂版),二版,全華圖書股份有限公司,2009。

[8] George W. Crabtree and Nathan S. Lewis, “Solar energy conversion,” Physics Today, American Institute of Physics, pp. 37-42, 2007.

[9] W. Sparber, O. Schultz, D. Biro, G. Emanuel, R Preu, A. Poddey and D. Borchert,

“Comparison of texturing methods for monocrystalline silicon solar cells using KOH and Na2CO3,” Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, pp. 1372-1375, 2003.

[10] E. Vazsonyi, K. De Clercq, “Improved anisotropic etching process for industrial texturing of silicon solar cells,” Solar Energy Materials and Solar Cells, vol. 57, issue 2, pp. 179-188, 1999.

[11] H. Chen, W. Fan, C. Cheng, C. Lin, and K. Huang, “Fabrication of texturing antireflection structures in solar cells by using the defocusing exposure in optical lithography,” Journal of the Electrochemical Society, vol. 153, no. 9, pp.

G802-G806, 2006.

[12] K. Kim, S. K. Dhungel, S. Jung, D. Mangalaraj, and J. Yi, “Texturing of large area multi-crystalline silicon wafers through different chemical approaches for solar cell fabrication,” Solar Energy Materials and Solar Cells, vol. 92, issue 8, pp. 960-968, 2008.

[13] H. Park, S. Kwon, J. S. Lee, H. J. Lim, S. Yoon and D. Kim,“Improvement on surface texturing of single crystalline silicon for solar cells by saw-damage etching using an acidic solution,” Solar Energy Materials and Solar Cells, vol. 93, issue 10, pp. 1773-1778, 2009.

[14] U. Gangopadhyay, K. H. Kim, S. K. Dhungel, U. Manna, P. K. Basu, M. Banerjee, H. Saha, Junsin Yi, “A novel low cost texturization method for large area commercial mono-crystalline silicon solar cells,” Solar Energy Materials and Solar Cells, vol. 90, issue 20, pp. 3557-3567, 2006.

[15] Z. Wu, S. Ge, M. Zhang, W. Li, K. Tao, “Synthesis of nickel nanoparticles supported on metal oxides using electroless plating: Controlling the dispersion and size of nickel nanoparticles” Journal of Colloid and Interface Science, vol. 330, issue 2, pp. 359-366, 2009.

[16] C. L. Li, H. X. Zhao, T. Tsuru, D. Zhou, M. Matsumura, “Recovery of spent electroless nickel plating bath by electrodialysis,” Journal of Membrane Science, vol. 157, issue 2 pp. 241-249, 1999.

[17] P.G. Kim and K.N. Tu, “Fast dissolution and soldering reactions on Au foils,”

Materials Chemistry and Physics, Vol. 53, Issue 2 pp. 165-171, 1998.

[18] Jeong In Han and Sung Jei Hong, “Ni electroless plating process for solder bump chip on glass technology,” Japanese Journal of Applied Physics, Vol. 36, pp.

2091-2095, 1997.

[19] J. Chen, G. Yu, B. Hu, Z. Liu, L. Ye, Z. Wang, “A zinc transition layer in electroless nickel plating,” Surface and Coatings Technology, vol. 201, issues 3-4, pp. 686-609, 2006.

[20] Chao Peng, Sylvia H.Y. Lo, Chi-Chao Wan, Yung-Yun Wang, “Study of the adsorptive behavior of Pd/PVP nanoparticles and its interaction with conditioner in electroless copper deposition,” Colloids and Surfaces A: Physicochemical and Engineering Aspects, vol. 308, issues 1-3, pp. 93-99, 2007.

[21] Sylvia H.S. Lo, Y.Y. Wang, C.C. Wan, “Synthesis of PVP-stabilized Cu/Pd nanoparticles with citrate complexing agent and its application as an activator for electroless copper deposition,” Journal of Colloid and Interface Science, vol. 310, issue 1, pp. 190-195, 2007.

[22] F. Hanna, Z. A. Hamid, and A. A. Aal, “Controlling factors affecting the stability and rate of electroless copper plating,” Materials Letters, vol. 58, issues 1-2, pp.

104-109, 2004.

[23] Y. M. Lin and S. C. Yen, “Effects of additives and chelating agents on electroless copper plating,” Applied Surface Science, vol. 178, issues 1-4, pp. 116-126, 2001.

[24] Z. C. Liu, Q. G. He, P. Hou, P. F. Xiao, N. Y. He, Z. H. Lu, “Electroless plating of copper through successive pretreatment with silane and colloidal silver,” Colloids and Surfaces A: Physicochemical and Engineering Aspects, vol. 257-258, pp.

283-286, 2005.

在文檔中 中 華 大 學 (頁 76-83)

相關文件