Chapter 3 Results & Discussion
3.2 The sensitivity of SiGe nanowire sensor with various oxidation
3.2.4 The sensitivity of SiGe nanowires after the oxidation of
We expected the sensitivity of SiGe nanowires were further enhanced by oxidation. Therefore, we change temperature of oxidation process (T=950℃). Unfortunately, some of nanowires were failure (Si0.8Ge0.2, Si0.7Ge0.3 and Si0.6Ge0.4), the reason may be nanowires were over oxidized.
After the oxidation of 2min at 950℃, the ID-VD curve of SiGe nanowires were shown in Figures 3-33~3-34. The average conductance of
SiGe nanowires between VD= 4V to VD= 8V, was shown in Figure 3-35~3-36. Finally, the sensitivity of SiGe nanowires were shown in Figures 3-37~3-38.
We observed that the sensitivity of SiGe nanowire was enhanced by oxidation condition. After the oxidation of 2min at 950℃, the sensitivity of Si0.93Ge0.07 nanowire was enhancement as compared with the oxidation of 2min at 900℃. The result was shown in Figures 3-39~3-41. But, the sensitivity of Si0.89Ge0.11 nanowire was reduction as compared with the oxidation of 2min at 900℃. The result was shown in Figures 3-42~3-43.
The reason may be higher defect was formed during this oxidation process [46]. In addition, we also oxidized SiGe nanowires by higher temperature (T=1000℃). But, oxidation rate was too fast so that nanowires were over oxidized.
Chapter 4 Conclusions
We have successfully fabrication the SiGe nanowire with different Ge concentration respectively. In addition, we used the SiGe nanowires as bio-sensor. The 3-amino-propyl-trimethoxy-silane (APTMS) was used to modify the surface, which could connect the bio-linker. The conductance of SiGe nanowire increases owing to APTMS with positive charge. The bis (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connected to APTMS and the conductance decreased because of negative charge. Finally, the protein immunoglobulin G (IgG) is linked to BS3, and the conductance reduces for negative charge. In order to compare the sensitivity with/without oxidation, the ∆S/S is considered. ∆S is the variation of conductance and S is the normal conductance of SiGe nanowire. We have demonstrated that the sensitivity was improved by using higher Ge concentration (7% ~ 30%) nanowire.
After the oxidation of 2 min at 900℃, the sensitivity of SiGe nanowires were enhanced. There are two reasons lead to the result. One is enhancement of surface-to-volume ratio after oxidation. The other one is Ge atom is rejected from the oxide and condensed in the remaining SiGe nanowire. In addition, we observed that oxidation rate of SiGe nanowire increase with Ge concentration. Therefore, Si0.6Ge0.4 nanowire was oxidized over.
After the oxidation of 2 min at 950℃, the sensitivity of Si0.93Ge0.07 nanowires were enhanced. The percentage change of the conductance is
9.6% for the normal state, 13.9% for the 900 ℃ oxidation and 34.76%
for 950 ℃ oxidation after APTMS modified. It is clearly observed that the sensitivity is improved by oxidation. After the oxidation of 2min at 950℃, the sensitivity (22.27%) of Si0.89Ge0.11 nanowire was reduction as compared with the oxidation (36.36%) of 2min at 900℃. The reason may be that higher defect was formed during this oxidation process. In addition, we also oxidized SiGe nanowires by higher temperature (T=1000℃). But, oxidation rate was too fast so that nanowires were over oxidized.
Chapter 5 Future Work
Due to oxygen concentration will affect whether GeO2 formed during oxidation process. We will change nitrogen/oxygen ratio to avoid GeO2 formed. In addition, we can change time of oxidation to control Ge concentration in SiGe nanowires. By changing nitrogen/oxygen ratio and time of oxidation, we will obtain optimum condition of oxidation.
Material of nanowire sensor Application
Silicon pH sensor,bio-sensor,DNA sensor and virus sensor
Metal oxide gas sensor
Polymer gas sensor
Metal gas sensor
Table 1-1
Figure 1-1. Conversion of a NW FET into NW nanosensor for pH sensing [1].
Figure 1-2. Plot of the conductance Versus pH [1].
Figure 1-3. A biotion-modified SiNW and subsequent binding of streptavidin to the SiNW surface [1].
Figure 1-4. Plot of conductance versus time for a biotin-modified SiNW,where region 1 correspond to buffer solution,region 2 corresponds to the addition of 250nM streptavidin [1].
Figure 1-5. Conductance versus time for a biotin-modified SiNW,where region 1 corresponds to buffer solution, region 2 corresponds to the addition of ~3μM m-antibiotin,and region 3 corresponds to pure buffer solution [1].
Figure 1-6. Modification scheme of the SiNW surface for the DNA detector: (1) self-assembly of 3-mercaptopropyltrimethoxysilane (MPTMS) by gas-phase reaction in Ar for 4 h; (2) covalent immobilization of DNA probes by exposing the previous surface to 5 íM solution of oligonucleotide CCT AAT AAC AAT modified with acrylic phosphoramidite at the 5¢-end for 12 h; (3) DNA detection based on hybridization between label-free complementary DNA target GGA TTA TTG TTA and the immobilized DNA probes on the SiNW surfaces. The inset is the SPV signal on a p-type Si surface at different stages of the modification; A, B, and C correspond to the schematic diagrams, D is with 25 pM solution of complementary DNA target exposed to the surface C, and E is with 25 pM solution of noncomplementary DNA (GGA TCA TTG TTA) exposed to the surface C [10].
Figure 1-7. Conductance of the same p-type SiNW, where the arrow indicates the addition of 25 pM complementary DNA (GGA TTA TTG TTA) solution [10].
Figure 1-8. Conductance (Upper) and optical (Lower) data recorded simultaneously vs. time for a single silicon nanowire device after introduction of influenza A solution. Combined bright-field and fluorescence images correspond to time points 1–6 indicated in the conductance data; virus appears as a red dot in the images [11].
Figure 1-9. Response of the SnO2 nanobelts to CO at a working temperature of 400 °C and 30% RH [13].
Figure 1-10. Measured time-dependent current through an individual CPNW sensor upon exposure to NH3 gas. The nanowire device being tested was about 335 nm in diameter [16].
Figure 1-11. Sensor resistance responses for hydrogen concentration varied in a range from 0.2 to 1% by pulses [18].
Figure 1-12. Schema of Scanning Probe Lithography (SPL).
Figure 1-13. Schema of imprint process [28].
Figure 1-14. Schematic view of iterative spacer lithography (ISL) [29].
Figure 1-15. Drain current of N- and P-MOSFETs are improved with the use of SiGe-channel [33].
Figure 1-16. The N-type sensitivity is improved with the increase concentration of Ge. [percentage % = (pH11-pH5)/pH5]
Figure 1-17. Scanning TEM image and Ge profile across the layers obtained by EDS measurement [41].
Figure 1-18. Mobility enhancement factor for the SGOI-MOSFETs as a function of the Ge fraction [47].
Si substrate 5000Å SiO2
Figure 2-1. SiO2 layer is grown on Si substrate. The thickness of SiO2 layer is 5000Å.
Figure 2-2. Defined active area. The height of oxide step is 3000Å.
Figure 2-3. Amorphous Si layer is deposited on SiO2 layer. The thickness ofα-Si layer is 150Å.
Figure 2-4. SiGe layer is deposited on α-Si layer.
Figure 2-5. Defined S/D region and nanowire.
SiGe nanowire
Figure 2-6. Remove one side of the parallel SiGe spacer.
SiGe nanowire
Al contact
Figure 2-7. Defined Al contact pad.
Figure 3-1. The Cross-Section view of the SEM of Si0.93Ge0.07 nanowire.
The height and width of Si0.93Ge0.07 nanowire are 192nm and 77nm respectively.
Figure 3-2. The Cross-Section view of the SEM of Si0.89Ge0.11 nanowire.
The height and width of Si0.89Ge0.11 nanowire are 184nm and 45.5nm respectively.
Figure 3-3. The Cross-Section view of the SEM of Si0.8Ge0.2 nanowire.
The height and width of Si0.8Ge0.2 nanowire are 159nm and 65.9nm respectively.
Figure 3-4. The Cross-Section view of the SEM of Si0.7Ge0.3 nanowire.
The height and width of Si0.7Ge0.3 nanowire are 153nm and 54.5nm respectively.
Figure 3-5. The Cross-Section view of the SEM of Si0.6Ge0.4 nanowire.
The height and width of Si0.6Ge0.4 nanowire are 153nm and 54.5nm respectively.
Figure 3-6. The Cross-Section view of the SEM of Si0.93Ge0.07 nanowire after the oxidation of 2 min at 900℃. The height and width of nanowire are 168nm and 55.9nm respectively.
Figure 3-7. The Cross-Section view of the SEM of Si0.89Ge0.11 nanowire after the oxidation of 2 min at 900℃. The height and width of nanowire are 166nm and 42.8nm respectively.
Figure 3-8. The Cross-Section view of the SEM of Si0.8Ge0.2 nanowire after the oxidation of 2 min at 900℃. The height and width of nanowire are 137nm and 47.1nm respectively.
Figure 3-9. The Cross-Section view of the SEM of Si0.7Ge0.3 nanowire after the oxidation of 2 min at 900℃. The height and width of nanowire are 121nm and 43.5nm respectively.
Figure 3-10. The Cross-Section view of the SEM of Si0.6Ge0.4 nanowire after the oxidation of 2 min at 900℃. The nanowire was oxidized over.
Figure 3-11. The Cross-Section view of the SEM of Si0.93Ge0.07 nanowire after the oxidation of 2 min at 950℃. The height and width of nanowire are 155nm and 42.9nm respectively.
Figure 3-12. The Cross-Section view of the SEM of Si0.89Ge0.11 nanowire after the oxidation of 2 min at 950℃. The height and width of nanowire are 118nm and 38nm respectively.
Unoxidation
Dry Oxidation of 2min at 900℃
height width area surface/volume
Dry Oxidation of 2min at 950℃
height width area surface/volume
Figure 3-13. Schema of mechanism of detecting IgG antibody.
Figure 3-14. The ID-VD curve of N-type Si0.93Ge0.07 nanowire. The length of nanowire is 30μm.
APTMS BS3
Figure 3-15. The ID-VD curve of N-type Si0.89Ge0.11 nanowire. The length of nanowire is 17μm.
Figure 3-16. The ID-VD curve of N-type Si0.8Ge0.2 nanowire. The length of nanowire is 13μm.
Figure 3-17. The ID-VD curve of N-type Si0.7Ge0.3 nanowire. The length of nanowire is 19μm.
Figure 3-18. The conductance of N-type Si0.93Ge0.07 nanowire changes with different chemical molecules. The length of nanowire is 30μm.
Figure 3-19. The conductance of N-type Si0.89Ge0.11 nanowire changes with different chemical molecules. The length of nanowire is 17μm.
Figure 3-20. The conductance of N-type Si0.8Ge0.2 nanowire changes with different chemical molecules. The length of nanowire is 13μm.
Figure 3-21. The conductance of N-type Si0.7Ge0.3 nanowire changes with different chemical molecules. The length of nanowire is 19μm.
Figure 3-22. The sensitivity improves with the increment of Ge concentration.
Figure 3-23. The sensitivity improves with the increment of Ge concentration.
Figure 3-24. The sensitivity improves with the increment of Ge concentration.
Figure 3-25. After the oxidation of 2min at 900℃, ID-VD curve of N-type Si0.93Ge0.07 nanowire. The length of nanowire is 50μm.
Figure 3-26. After the oxidation of 2min at 900℃, ID-VD curve of N-type Si0.89Ge0.11 nanowire. The length of nanowire is 9μm.
Figure 3-27. After the oxidation of 2min at 900℃, ID-VD curve of N-type Si0.8Ge0.2 nanowire. The length of nanowire is 15μm.
Figure 3-28. After the oxidation of 2min at 900℃, the conductance of N-type Si0.93Ge0.07 nanowire changes with different chemical molecules.
The length of nanowire is 50μm.
Figure 3-29. After the oxidation of 2min at 900℃, the conductance of N-type Si0.89Ge0.11 nanowire changes with different chemical molecules.
The length of nanowire is 7μm.
Figure 3-30. After the oxidation of 2min at 900℃, the conductance of N-type Si0.8Ge0.2 nanowire changes with different chemical molecules.
The length of nanowire is 15μm.
Figure 3-31. After the oxidation of 2min at 900℃, the sensitivity of SiGe nanowires were enhanced.
Figure 3-32. After the oxidation of 2min at 900℃, the sensitivity of SiGe nanowires were enhanced.
Figure 3-33. After the oxidation of 2min at 950℃, ID-VD curve of N-type Si0.93Ge0.07 nanowire. The length of nanowire is 20μm.
Figure 3-34. After the oxidation of 2min at 950℃, ID-VD curve of N-type Si0.89Ge0.11 nanowire. The length of nanowire is 13μm.
Figure 3-35. After the oxidation of 2min at 950℃, the conductance of N-type Si0.93Ge0.07 nanowire changes with different chemical molecules.
The length of nanowire is 20μm.
Figure 3-36. After the oxidation of 2min at 950℃, the conductance of N-type Si0.89Ge0.11 nanowire changes with different chemical molecules.
The length of nanowire is 13μm.
Figure 3-37. After the oxidation of 2min at 950℃, the sensitivity of SiGe nanowires were enhanced.
Figure 3-38. After the oxidation of 2min at 950℃, the sensitivity of SiGe nanowires were enhanced.
Figure 3-39. The sensitivity of Si0.93Ge0.07 nanowires were enhanced with different oxidation temperature.
Figure 3-40. The sensitivity of Si0.93Ge0.07 nanowires were enhanced with different oxidation temperature.
Figure 3-41. The sensitivity of Si0.93Ge0.07 nanowires were enhanced with different oxidation temperature.
Figure 3-42. The sensitivity of Si0.89Ge0.11 nanowires changed with different temperature.
Figure 3-43. The sensitivity of Si0.89Ge0.11 nanowires changed with different temperature.
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