In this last stage, students apply the principles they have learned in Stage 2 to complete a passage, as shown in Sheet C, by reading the figure provided.
Sheet A
Vertical Electrode GaN-Based Light-Emitting Diode Fabricated by Selective Wet Etching Technique
(theme + information systems)
A 430-µm-thick (0001)-oriented sapphire substrate and line & space pattern were used in the wet etching test. The sapphire substrate was wet etched using a H3PO4-based solution. The etching rate could be increased more than
1µm/minute depending on the H3PO4 composition and etching temperature. This etching rate is sufficiently high to etch even a thick sapphire substrate and is comparable to the LLO process time.
Figure 1(a) and 1(b) show a cross-sectional scanning electron microscope (SEM) image of the wet etched-sapphire substrate and the relationship between the pattern space width and the etching depth, respectively. The etched structures are all V-grooves. This V-shape structure can be used to form a cleaving line to break the sapphire substrate. Our recent study showed that a 100-µm-thick sapphire substrate can be cleaved by forming a wet etching line of 3µm depth.
It is anticipated that this method will be very effective for decreasing chip cost and increasing productivity.
The etching depth is substantially dependent on the pattern space width, as shown in Fig. 1 (b). This means that if the pattern space width is narrower than the etching target thickness, wet etching will self-stop before reaching the target thickness.
Sheet B
Vertical Electrode GaN-Based Light-Emitting Diode Fabricated by Selective Wet Etching Technique
(theme + information systems)
A 430-µm-thick (0001)-oriented sapphire substrate and line & space pattern were used in the wet etching test. We wet etched the sapphire substrate, using a H3PO4-based solution. The etching rate could be increased more than
1µm/minute depending on the H3PO4 composition and etching temperature. Even a thick sapphire substrate can be etched by such a high etching rate, which is comparable to the LLO process time.
Figure 1(a) and 1(b) show a cross-sectional scanning electron microscope (SEM) image of the wet etched-sapphire substrate and the relationship between the pattern space width and the etching depth, respectively. The etched structures are all V-grooves. A cleaving line can be formed, using this V-shape structure, to break the sapphire substrate. Our recent study showed that we can cleave 100-µm-thick sapphire substrate by forming a wet etching line of 3µm depth.
It is anticipated that this method will be very effective for decreasing chip cost and increasing productivity.
The pattern space width is substantially dependent on the etching depth, as shown in Fig. 1 (b). This means that if the etching target thickness is wider than the pattern space width -, wet etching will self-stop before reaching the target thickness.
Sheet C
Mechanical Stability of Externally Deformed Indium-Tin-Oxide Films on Polymer Substrates
All of the test vehicles (OLD) used in the experiments included ITO films of 45-50Ω/sq. sheet resistance (NEW) and about 100 mm thickness. As shown in Fig 1(b), the ITO films (OLD) on polycarbonate substrates were patterned to form island arrays (NEW) of 200 × 100 µm2 size and 30/300µm (vertical/horizontal) spacing, and Al films were sequently deposited (NEW). The deposited Al films (OLD) were also patterned as pad-electrodes for accurate resistance measurement (NEW). All of the measurements (OLD) concerned with electrical characteristics were conducted by the four-point probe method (NEW) in a probe station using ITO islands at the midpoint of the gauge.
The two passages in Sheets A and B describe the same experimental process but are constructed differently. The former follows the patterns of theme and information systems while the latter does not. The first stage is designed to raise students’
consciousness about how discourse organization may influence text cohesion. After student discussion, the teacher explains how sentences are related to each other to achieve text cohesion.
In the second stage, the teacher explains the concepts of information and theme systems as well as the principles governing them in the Methods section of research articles. Students are then asked students to reread the passages and identify the given/new information and the theme/rheme in the better passage. It is then shown how voice choice is related to either of the two systems. Explicit illustration is critical to help students realize such relation. This also acts as a warm-up for the writing task in the next stage.
In the last stage, we design a task requiring students to complete a cohesive passage in the Methods section by applying the principles they learn. Sheet C is used.
In the passage, the underlined sentences or phrases present the old/new information (as marked on Sheet C) and the phrases in grey will be left blank for students to fill in.
Before giving the task, the teacher should make sure students understand the purpose of the exercise. Besides, teachers can first guide students by asking them which system they think should be used in the passage. If they cannot decide, teachers can review the principles again. This process is aimed to enhance their understanding of theme and information systems.
In the lesson plan, we use research articles in the field of materials science as the materials for the task. However, research articles from other fields can also be used for a lesson plan for students in those fields. EAP/EST teachers can vary the materials according to students’ academic backgrounds. Besides, although we only demonstrate
the given-to-new pattern in the third part of the lesson plan, teachers can choose passages with theme system for practice. This lesson plan can be expanded in many ways. For example, the task may be even more challenging by asking students to choose a paper that they recently read and to analyze its discourse organization in relation to voice use. Students may also be encouraged to rewrite passages not following the principles of theme and information systems into better structured ones by changing the voice of sentences.
CHAPTER 5 CONCLUSIONS
The present study investigates the use of both active and passive voice in research articles. In this chapter, we will first summarize the findings of our analysis of voice use in both social and scientific research articles and the results of the test on problematic verbs in voice use. Then, pedagogical implications are discussed. To contextualize the research results, we explicate the problems Chinese EAP/ESP writers may have with voice choice, making a number of suggestions. In addition, as we propose to link voice use to rhetorical structure and genre from a functional perspective, the relationship among voice, rhetorical structure, and the genre of research articles is clarified, also based on our research results. At last, we will also make some suggestions for future research.
SUMMARY OF RESULTS