According to all the investigation, we can get some conclusion. In chapter2, lateral double diffused MOSFET (LDMOS) has been characterized including quasi-saturation effect and the current flowlines and the impact ionization location by TCAD 2D simulation. Various test structures of MESDRIFT devices are also discussed with respect to the I-V characteristics influence by different contact implant location and implant area. Here, we propose two ways to find MOS model from KPC and KL devices, respectively. KPC device has the best match I-V characteristics to LDMOS while KL device has the advantage to extract MOS data easily.
In chapter3, LDMOS macro model overall extraction flow is presented in detail.
Such a model is developed by adding a voltage controlled resistance to a standard BSIM3 MOSFET model. In order to reduce mismatch of macro model at high gate bias due to the contact implant, we use reverse calculated RD to modify the error. For more physical RD model, we derive Vk formula to reduce RD model parameter numbers. For time-saving purpose, we use KL device to extract MOS model.
Combining MOS model and RD model, we have a macro model and such a macro model can exactly describe the I-V characteristics of LDMOS with a mean error of less than 2%.
An investigation of Self-heating effect (SHE) in LDMOS based on pulsed measurements is discussed in chapter4. It has been shown that pulse width and power are important parameters to define free-SHE measurements conditions. Two simple models are proposed and validated to describe the behavior of SHE in LDMOS.
For more complete macro mode, different geometry must be used for the extraction of the BSIM3 parameters, e.g. one large size device and two sets of
accuracy of parameter extraction but it will raise the difficulty in the meantime.
Besides, SHE should also be taken into account in macro model.
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Appendix A The intrinsic MOS model parameters extracted from
+a1 = 0 a2 = 1 b0 = 0
+stk2 = 0 lodk2 = 1 lodeta0 = 1
+ku0 = 0 lku0 = 0 wku0 = 0
+pku0 = 0 llodku0 = 0 wlodku0 = 0 +kvsat = 0 steta0 = 0 tku0 = 0 )