3-3-2 Hot Carrier Injection on pMOSFETs
Chapter 5 Future Work
Less than 3nm gate dielectric with both high drivability and reliability is necessary
for realizing high performance CMOS devices. Because nitrogen incorporated oxide
can solve these problems, fabrication technology of ultrathin gate dielectrics with high
nitrogen concentration is required. Nitridation treatment on ultrathin oxide has been
used in MOS technology to strengthen both the dielectrics robustness and electrical
stress, meanwhile it also can apply to form high permittivity gate dielectric stacks.
Besides, it has its excellent resistance of boron penetration and is a good buffer layer
candidate between high-K gate dielectric and Si substrate. There are a number of
topics relevant to this thesis, which may deserve further studies. The following topics
are suggested for future work:
according to the current results obtained so far, with such good electrical
characteristics and reliability properties of oxynitride, it manifests a high competence
for a number of applications to deep submicrometer. Among them are the following:
(1) Application of the interfacial layer between high-k and substrate:
High-nitrogen oxynitride has both the ability to withstand the penetration of the
oxygen atoms and low density of interface state (Dit). For certain high-K materials
such as HfO2 and ZrO2, they suffer the oxygen atom outdiffusion into substrate during
deposition. Hence, this problem can be improved if oxynitride film can be inserted in
between. That is, we grow the oxynitrde film first before the formation of the HfO2
and ZrO2. Then, the HfO2/oxynitride and ZrO2/oxynitride films will have a large
possibility to optimize these high-K materials.
(2) Application of SONOS button oxide:
For Polysilicon-blocking Oxide-silicon Nitride-tunneling Oxide-Silicon
(SONOS), one of the mechanisms to degrade the ability of charge retention is by trap
to trap tunneling (TTT), which means that electron stored in nitride trap directly
tunnel through the tunnel oxide to silicon substrate via the interface state. By our
technique, oxynitride with Dit could improve the charge retention of SONOS.
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