CHAPTER 4 Result and Discussion
5.2 Suggestion for Future Work
Although we have fabricated Al gated n-MOSFETs on HfTiO gate dielectric with 1.9 nm EOT. The fully Al/HfTiO device has high effective work function of 4.2 eV, high peak electron mobility of 121 cm2/V-s, several works are worthy to do in the future and are recommended here：
1. We need to find the way how to fabricate the device of CMOSFET.
2. Because the threshold voltage is not small enough, we need to search new electrode of high-κ metal gate to improve the thermal voltage.
3. In future, we will apply this work in my investigation to the present circuit design in order to check the influences of short channel effects in the advanced CMOSFET technology.
4. We should also measure the reliability of the Al/HfTiO CMOSFET.
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