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The Structures and the Material of Wave Absorbers

在文檔中 高頻微波吸波器材之研究 (頁 40-49)

The Absorbers for Microwaves Frequencies

4.2 The Structures and the Material of Wave Absorbers

Our purpose is to examine the dynamics of high-frequency microwave absorption and efficient absorber structures that can tolerate high power while also possessing a structural simplicity for laboratory fabrication.

Here, we introduce two various wave absorbers, the pyramidal absorber and the

wedg

ge-shaped a e 4.1.

The purpos ormance. In rbers whic rbers are s owave is fix

The sizes o eguide. In t se fundame versions are re 4.1 show vectors repre magnetic fie een in [23].

absorber. Th

se of this sim the simulati ental mode avoidable w ws the field

esent the m eld. More pl

he features a

mulation is diminish th fluence the the same, p

tt.

are specifie ion, these a

TE10 cutof when the us distribution agnitude an lots of moda

and physica

to look for he dimensi

reflection particularly

ed according absorbers a ff frequency sed frequenc n of TE10 m nd direction

al field dist

al specificat

what kind o ional distin

and absor y the absor

g to the insi are settled i y is 21.081 cies are und mode in a re n of electric

tribution in Table 4 The dim and we

tions of them

of absorber ctions betw rption, mos bing area.

ide dimensi n the Ka-b 1 GHz so th der double c

ectangular w field and bl rectangular 4.1 mensions of edge shaped

m are show

has the opt ween these

st parts of The powe

ions of Ka-b band waveg

that most m cutoff frequ

waveguide.

lue dashed l r waveguide f the pyram d absorbers

wn in

whos

Besides the se the leng rber, which nged dimens

e absorbers The dispers

re

he cutoff f ensions a, b d, mostly, hi he field distr gure 4.1 mensions a,

es (dashed l

e standard d gth is chan h is closer to

sion of abs are fixed at sion relation

frequency o , as shown igh-order m ributions of Field plot b. Electric f lines).

dimensions nged and st

o the actual sorber and t 10 degrees n in a wave

modes canno f which are

ω of TE10 m field are red

as shown in tretched to situation in waveguide ot appear in analogous t ma

cm πc ω 0 =

mode in a d vectors (so

n Fig. 4.2, w find the p n an anecho

and the ta n the waveg

to TE10 mod ma

a rectangula olid lines) a

we also sim performance

ic chamber.

aper angles

ar waveguid horter side o guide except

de [23].

ar wavegui and magneti

mulate absor e of a col r. The “L” is s of these t

de with in of waveguid t the modes ide with in ic field are b

wave e emitted to and knew t d. Now simi rber-1 [Fig.

A conspicu the values o er resistivity er absorption rst contact, w the frequenc gure 4.2

tled in Ka ationships o rallel polari mbination o

1 we have o infinite fla that what ki

ilar calculat . 4.2(a)].

uous dip ap of return los y. However n performan which resul cy fit for re The wedge a-band wav of the dire

zation and f (a) and (b

calculated t at surfaces

nd of mater tion will be

pears at abo ss at the pro r, theoretica nce is. The lts in some w eflection bac

e-shaped ab veguide. T ections of f

case (b) is ).

the reflectio of substanc rial is applic

done again

out ρ/ρcu =1 oximity of th ally the larg fact is that wave reflec ck and forth bsorbers (a) The differen fields and

perpendicu

on and tran ces over a w

cable to wa n through H

105, particul his dip are l ger the resi the absorbe cted. What i

h at the two )-(b) and p nces betwe the absorb ular polariz

nsmission c wide resistiv

ve absorber HFSS for the

larly in Fig less than the

istivity of a er cannot ab is more, the o wedge-sh yramidal ab een (a) an

ing surface ation. Case

coefficients vity range [ rs at microw e wedge-sha

g 4.3(a) and e materials absorber is,

bsorb all po e reflected w haped space absorber (c) nd (b) are

other

r word, reso go back to es a descri mplish abso

The lossy m prising grap

lubricity a t to form wa m) and the ρ frequencies

conductors gure 4.3 riety of mate

onance occu wave port iption of t orption.

material we phite and m and good ad

ave absorbe ρ/ρcu is abo

over 20 GH s, which me

The absorp erials at (a)

urs at the pe so the pow hat materia

e used as th ass isopropy dhesion to ers. The con

ut 3.48×106 Hz. Microw ans that the ption perfor

24, (b) 26 a

eripheral of wer measur

al with ab

he wave abs yl alcohol.

metal. We nductivity o

6. Neverthe waves penet

ere is more rmance of and (c) 28 G

f absorber an ed is less t out ρ/ρcu =

sorbers is a This colloid can smear of this mater less, it belo trate dielect power can b wedge-shap GHz.

nd the refle than it shou

=106 are go

kind of car dal graphite it on a ben rial is appro ongs to elect tric materia be absorbed ped absorbe

ected wave uld be. Fig.

ood enough

rbon compo e compound nded condu oximately 1

trical condu als more de

d by dielect er-1 made

but m

most dielec est electrica netic, ferroe ake wave ab

The Si

A figure of ), defined as

re Pin is th ctivity (S11

ative numbe hoic chamb cted. An an ch means on

gure 4.4 e "L" is the

ctric materi al conductiv electric and bsorbing ma

imulatio

f merit for t s a ratio in d

R

he incident ) of these r but minus ber is at le nechoic cham nly one of te

The diagra changed di

als cannot ve material d ferrite mat aterials [24]

n Result

the power lo decibels (dB

10 (dB)= RL

power and absorbers s sign is ofte east below mber with r en thousand

am of the w mensions in

sustain hig l to serve a aterials com

].

ts of the

oss because B) is measure en omitted.

-20 dB. O return loss o d of incident

wave and w n the simula

gh power. A s our wave mbined with

Three K

e of reflecti

log10

10 Γ

=

e reflected ed by return The require Only 1 perc of -40 dB is

t power is re

wedge-shape ation.

As a result absorbers.

some are c

Kinds of

on is called

Γ2

power, res n loss whic ement of re cent of inc considered eflected.

ed absorber

t, we select The dielec commonly u

Absorbe

d the return

spectively.

ch is alway eflectivity fo cident powe d to be exce

r in wavegu t the

absor versu as sh

Fig GH Fig GH

Figure 4.5 rber-1 [Fig.

us frequenc hown in Fig

gure 4.6 Hz microwav

gure 4.5 Hz microwav

and 4.6 r . 4.2(a)] and

y ranging f . 4.4 and the

The return ves. A retur The return ves. A retur

respectively d wedge-sha from 22 to 2 e ρ/ρcu of us

n loss of we rn loss of -1 n loss of we rn loss of -3

y show the aped absorb 28 GHz. Th

sed materia

edge-shaped 4 dB is equ edge-shaped 5 dB is equ

simulation ber-2 [Fig. 4 he "L" is the al is about 3

d absorber-2 ual to reflect d absorber-1 ual to reflect

n results of 4.2(b)], plot e length of w

.48×106.

2 [Fig. 4.2(b tivity of 4%

1 [Fig. 4.2(a tivity of 0.0

f wedge-sha ts of return wave absor

b)] for 22 to

%.

a)] for 22 to 03%.

aped loss rbers

o 28 o 28

First, there is a clear tendency for every curve toward less reflection (more absorption) when the frequency of incident wave is enhanced increasingly. This is well demonstrated by the following equation. The time-averaged power absorbed on the surface of a good conductor is

2

||

* H

] 4 H E 2Re[

1 × = μωδ

= z

abs

da

dP e (4.4)

and by substituting Eq. (2.14) into Eq. (4.4) σ ω

μω

= H||2

8 da

dPabs

(4.5) where H|| is the tangential magnetic field that exists just on the surface of the

conductor. The power absorbed is proportional to square root of frequency of incident wave and return loss is in the same way.

Equation (4.4) demonstrates a more significant point that the power loss per unit area also depends on the tangential magnetic field (H||), and this can explain the difference of absorption performance between these two models. The tangential magnetic field increases with a reduced cross-sectional area of space in waveguide when wave gets into the zone of absorber [Fig. 4.2(a)]. Therefore this leads to more power being absorbed. For satisfying boundary conditions of electromagnetic fields, the electric field going into absorber can produce a current near the surface of the conductor, which causes the same magnetic field to resist the entrance of the magnetic field outside the surface. However, the effect doesn’t appear in wedge-shaped absorber-2 though cross-sectional area also reduces

Secondarily, based on Fig. 4.1 and 4.2(a), the directions of TE10 mode electric field are closely parallel to the absorbing surfaces of wedge-shaped absorber-1 (parallel polarization). It is easier to form the electric force lines than the other case of wedge-shaped absorber, wedge-shaped absorber-2 (perpendicular polarization), for

whic superior per

rber-2 [Fig.

Hence, tha istent with llel polariza

The simulati in Fig. 4.7, e combinati omparison a rption perfo The tip of a

than that m nitude of th gure 4.7

crowaves.

e difficult t rformance o

. 4.6].

at the absor the theoret ation is alwa

ion results , identically ion of wedg among Fig.

ormance, w a pyramidal made by a lin he power r

The return

to do that. T of absorption

rption perfo ical calcula ays less than

of the third y, with diffe ge-shaped a

4.5-7, the p which can b

absorber is ne, the tip o eflected is n loss of pyr

This is one n in compa

ormance in ation in Sec n under perp

d model, py erent length absorber-1 a pyramidal a

e attributed s a dot and of a wedge-less when ramidal abs

reason wed rison with t

case (a) is c. 3.2, the r pendicular p

ramidal abs s. Geometri and absorbe absorber con d to the stru the impeda shaped abso

electromag sorber [Fig.

dge-shaped the result of

better than eflection co polarization

sorbers [Fig ically, a pyr er-2. But, a nspicuously uctural char ance made b

orber, whic gnetic wave

4.2(c)] for

d absorber-1 f wedge-sha

n in case (b oefficient u n.

g. 4.2(c)], c ramidal abs as a consequ y has the op

racteristic o by a dot is ch means th e contacts a r 22 to 28 G sorber uence ptimal on the much at the a dot.

GHz

Exce of absorbe owaves. Th lly used i tromagnetic

cially the w midal absor

Another po easing the l

decrease in itionally, th ch means th nite. And a eguide is sim

gure 4.8

在文檔中 高頻微波吸波器材之研究 (頁 40-49)

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