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High-pressure phase transitions in Zn1-xMxSe (M=Cd, Fe, and Mn)

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High-pressure phase transitions in Zn

12x

M

x

Se

„M5Cd, Fe, and Mn…

Chih-Ming Lin and Der-San Chuu*

Institute of Electro-Physics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China

Ji-an Xu and Eugene Huang

Institute of Earth Sciences, Academia Sinica, NanKang P.O. Box 1-55, Taipei, Taiwan 11529, Republic of China

Wu-Ching Chou

Department of Physics, Chung Yuan Christian University, Chung-Li, Taiwan, Republic of China

Jing-Zhu Hu

Geophysical Laboratory, Carnegie Institution of Washington, Washington, D.C. 20015

Jui-Hsiang Pei

National Hsinchu Teacher’s College, Hsinchu, Taiwan, Republic of China

~Received 12 May 1997; revised manuscript received 20 January 1998!

Energy-dispersive x-ray diffraction was employed to study pressure-induced phase transitions in Zn0.84Fe0.16Se, Zn0.9Cd0.1Se, and Zn0.76Mn0.24Se crystals up to 21.0, 23.3, and 24.3 GPa, respectively. Our

result shows that the B3 to B1 structure transitions for these crystals occurred at 11.460.5, 9.560.3, and 9.6 60.5 GPa, respectively. Compared to the phase-transition pressure (Pt) of ZnSe~14.4 GPa!, a reduction of

about 3–5 GPa is exhibited in these ternary compounds. This reduction in phase-transition pressureDPt in the

ternary compounds suggests that the fractional volume change, (DV/V0), of the B3-B1 phase admixture might

be the source of this reduction. Our results indicate that Pt~with respect to the phase transition pressure 14.4

GPa of ZnSe! is related to the fractional volume change (DV/V0) by the expression Pt[email protected]

(DV/V0)20.0281(DV/V0)2# GPa. @S0163-1829~98!05426-5#

ZnSe-based ternary compound semiconductors, which are random mixtures of ZnSe and magnetic or nonmagnetic ions, have attracted much attention due to the study of basic physi-cal properties such as the variation of long wavelength opti-cal phonon vibration modes versus the mole fraction of non-magnetic ions1and its ability to tune both the band gap and the lattice constant for application in optoelectronic devices. The diluted magnetic semiconductor2~DMS! Zn12xMnxSe is

one of the ZnSe ternary compound semiconductors, which have been reported to have many interesting physical prop-erties, such as intermediate-mode behavior3,4and an anoma-lous dependence of the band gap on the magnetic ion

composition.5 Some important results of the

pressure-induced phase transition of ZnSe ternary compound semi-conductors containing magnetic ions have been obtained;

e.g., Qadri et al.6 used the energy-dispersive

x-ray-diffraction ~EDXD! method to investigate the pressure ef-fects of the Zn0.83Fe0.17Se crystal, and Arora and co-workers and others applied a Raman scattering experiment to study the phase transitions of Zn12xFexSe,

4

Zn12xCoxSe,

7 and Zn12xMnxSe ~Refs. 8 and 9! under high pressure. It was

found that the existence of magnetic ions in the ZnSe crystal resulted in a reduction of the transition pressure. Such a re-duction was believed due to the hybridization of 3d orbitals into the tetrahedral bonds,6,10 while Qadri et al.11 reported that the phase transition pressure decreased when the lattice parameter increased. Usually, the semiconductor-metal tran-sition pressure ( Pt) identified by the EDXD result

corre-sponds to a change of the crystal structure which

accompa-nies the disappearance of the local magnetic ions and the

longitudinal optical~LO! phonon modes according to Raman

scattering results.4In this work, we study the phase transition of Zn12xMxSe, M5Cd, Fe, and Mn, crystals by the EDXD

method under high pressure.

Zn12xMxSe, M5Cd, Fe, and Mn, crystals grown by the

modified Bridgman method were grounded to 1mm size for

use in the EDXD measurement. A Mao-Bell-type diamond

anvil cell ~DAC! with T304 stainless steel gaskets which

were preindented to 15.0 GPa was used; the sample hole was

200 mm in diameter. The anvil parameters were 1/3 carats

with a 600 mm culet. Experimental details were described

earlier.12 For the DAC EDXD experiment, the

supercon-ductor wiggler synchrotron beam line X17C of the National

Synchrotron Light Source ~NSLS! of Brookhaven National

Laboratory was used. The beam size was 50350 mm2, a

germanium energy dispersive detector was set in the position where the diffracted angle (u) was 5°. So the relation of the energy of reflection, E, versus d spacings, d, is Ed571.137 keV Å. Methanol-ethanol 4:1 fluid was used as a hydrostatic

pressure medium and the internal gold standard13 was

em-ployed in the pressure determination in the EDXD measure-ment, respectively. The peak positions were read out by a peak search program provided by a VAX computer in the beam line X17C; the equation of state~EOS! data were fitted to the Murnaghan equation by use of a fitting program re-ported earlier.14

For the case of nonmagnetic impurities, a series of spectra of the Zn0.9Cd0.1Se loading run is shown in Fig. 1, which

PHYSICAL REVIEW B VOLUME 58, NUMBER 1 1 JULY 1998-I

PRB 58

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contains the x-ray emission lines of Cd and the standard identified pressure lines of internal gold. Zn0.9Cd0.1Se has a

lattice parameter of 5.64960.001 Å from the EDXD

mea-surement at ambient pressure. Figure 1 shows that there are only three reflections~111!, ~220!, and ~311! of the B3

@zinc-blende ~ZB!# phase, by the relation of Ed571.137 keV Å;

those which appear are with d spacings 3.272, 2.002, and 1.714 Å, respectively, at ambient pressure. When the

pres-sure was increased to 9.5 GPa, the reflections ~200! and

~220! of the B1 @rocksalt ~RS!# phase appeared at the

high-energy side of the reflections ~111! and ~220! of the B3

phase, respectively. The d spacings at 9.5 GPa are 3.158, 1.939, and 1.646 Å for the B3 phase and 2.59 and 1.835 Å for the B1 phase, while the lattice parameters are 5.472

60.001 Å and 5.18560.001 Å for B3 and B1 phases,

re-spectively. The ambiguity pressure range of the B3 and B1 phases is from 9.5 to 11.0 GPa; in this pressure region a mixing of the B1 and B3 phases coexisted. The onset pres-sure of the transition from the B3 to B1 phase is 9.5 GPa; the reflections of the B3 phase of Zn0.9Cd0.1Se disappeared completely and only reflections of the B1 phase appeared apparently above 11.0 GPa. Since one can argue on thermo-dynamic grounds that the transition pressure should be nearer, or equal to, the onset pressure, therefore, the transi-tion pressure of B3 to B1 for Zn0.9Cd0.1Se is taken as 9.5 GPa. The B1 reflections~200! and ~220! were found to exist up to 23.3 GPa. For the case of the magnetic impurity ternary

compound of ZnSe, a series of Zn0.84Fe0.16Se and

Zn0.76Mn0.24Se loading run spectra are similar to those of Zn0.9Cd0.1Se. Zn0.84Fe0.16Se and Zn0.76Mn0.24Se have lattice

parameters 5.63960.001 and 5.70860.001 Å, respectively,

as obtained at ambient pressure from EDXD measurements. For the case of Zn0.84Fe0.16Se, only~111!, ~220!, and ~311! of the B3phase peaks appeared below 11.4 GPa. The d spac-ings at 11.4 GPa are 3.112, 2.556, and 1.802 Å for the B3 phase and are 1.861 and 1.634 Å for the B1 phase, respec-tively. The lattice parameters of the B3 and B1 phases were

5.35760.001 and 5.10460.001 Å at 11.4 GPa, respectively.

Above 11.4 GPa, peaks of the B3 phase disappeared and alternatively the peak of the B1 phase occurred apparently. The B1 peaks~200! and ~220! were found to exist up to 21.0 GPa. In the case of Zn0.76Mn0.24Se, only reflections ~111!,

~220!, and ~311! of the B3 phase with d spacings 3.302,

2.030, and 1.725 Å, respectively, appeared at ambient pres-sure. At 9.6 GPa, the reflections~200! and ~220! of the B1 phase appeared at the high-energy side of the reflections

~111! and ~220! of the B3 phase, respectively. The d

spac-ings at 9.6 GPa are 3.189, 1.946, and 1.668 Å for the B3 phase and 2.593 and 1.844 Å for the B1 phase. At 9.6 GPa the lattice parameter of the B3 phase is 5.519 Å and is 5.202 Å for the B1 phase. Above 9.6 GPa, the reflections of the

B3 phase of Zn0.76Mn0.24Se disappeared and the reflections of the B1phase occurred apparently. The B1reflections~200! and~220! were found to exist up to 24.3 GPa. Importantly, no two-phase coexistence ambiguity range occurred in the case of magnetic impurity ternary compound semiconductors of ZnSe. The structure phase-transition pressures were 11.4, 9.6, and 9.5 GPa for Zn0.84Fe0.16 Se, Zn0.76Mn0.24Se, and Zn0.9Cd0.1Se, respectively. By the way, the width of the tran-sition zone of Zn0.9Cd0.1Se is larger than in the other two samples.

The variations of the interplanar distances dhkl ~Å! shown in Fig. 2 for Zn0.9Cd0.1Se. Zn0.84Fe0.16Se and Zn0.76Mn0.24Se FIG. 1. A series spectra of Zn0.9Cd0.1Se at various pressure

re-corded in a loading run which contains the x-ray-emission lines of Cd Ka1 and Cd Kb1and the standard identified pressure lines of

Au~111!.

FIG. 2. The variation of dhkl~Å! of Zn0.9Cd0.1Se with pressure

~GPa! for the B3 and B1 phases.

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have the same relations as that of Zn0.9Cd0.1Se. All the inter-planar distances decreased as the pressure was increased for both B3 and B1 phases. Figure 3 shows the EOS relations as a function of pressure for Zn0.84Fe0.16Se, Zn0.76Mn0.24Se, and Zn0.9Cd0.1Se, respectively. V0 is the volume at ambient pres-sure. The arrows labeled A, B, and C at 11.4, 9.6, and 9.5 GPa indicate transition pressures of the B3 to B1 phase for Zn0.84Fe0.16Se, Zn0.76Mn0.24Se, and Zn0.9Cd0.1Se, respec-tively. The data for both phases were fitted to the Murnaghan equation by a fitting process of Xu et al.14The values of K0, the isothermal bulk modulus at ambient pressure, and K08, the pressure derivative of the isothermal bulk modulus evaluated at ambient pressure, of the Murnaghan equation for these three samples in the region below and above the phase tran-sitions~B3 and B1 phases! obtained from the fitting process are listed in Table I. The values of K08 were consistent with the slops of d spacings for B3 and B1 in the loading run spectra. It shows that all samples in the pressure region (B1) above the phase transition were less compressible than that in the pressure region (B3) below the phase transition.

The phase-transition pressure Ptof ZnSe was found to be

14.4 GPa.4As we mentioned above, our results show that the

Ptis decreased as the impurity ion Fe, Cd, or Mn was mixed

to form the ternary compounds ZnFeSe, ZnCdSe, or

ZnMnSe, respectively. For example, the Pt’s of

Zn0.84Fe0.16Se, Zn0.76Mn0.24Se, and Zn0.9Cd0.1Se are 11.4, 9.6, and 9.5 GPa, respectively. The reason for the reduction of the phase transition pressure was extensively studied by many authors for a decade.6,10,15,16 Qadri et al.6 and Ves

et al.15 investigated the variation of Pt of Zn12xMnxSe and

Zn12xFexSe with the impurity concentration x of Mn and Fe.

They concluded that the decreasing of the B3 to B1phase transition pressure was strongly dependent on the increasing of the impurity concentration. In a later work of Qadri

et al.,16 the pressure effect on the phase transition of Cd12xMnxTe was investigated, and a similar result was

ob-tained. Maheswaranathan et al. studied Cd0.52Zn0.48Te and Cd12xMnxTe with 0<x<0.52 ~Ref. 10! using a

photoemis-sion method; they indicated that the substitution of Zn by Cd in the zinc-blende lattice made the lattice more stable than the substitution of Zn by Mn. They found that Mn, but not Zn, weakened the zinc-blende crystal structure and made it less stable under pressure and suggested that 3d orbitals of Mn ions but not Zn ions hybridize into tetrahedral bonds because the 3d electrons are less tightly bound in Mn than in Zn. And they also found that Cd and Zn d levels do not

hybride with s p3 bonding orbitals. Therefore, they

con-cluded that the cause of the reduction of the phase-transition pressure was attributed mainly to the hybridization of the Mn or Fe 3d orbitals into tetrahedral bonds in the Mn or Fe

ternary alloys. Furthermore, Qadri et al.11 and

Ma-heswaranathan et al.10 indicated that in the ~Zn,M!Se

~M5Fe, Mn! system the lattice parameter increased and the

transition pressure decreased as the magnetic ion was mixed into ZnSe. The covalent radius of Zn is 1.25 Å, which is larger than the 1.17 Å of Fe and 1.17 Å of Mn, respectively. Thus, the reduction of the phase-transition pressure Pt was

also ascribed to the decrease of the covalent radius of the impurity ion as Fe or Mn substituted the Zn ions.

Arora and Sakuntala,8in the investigation of the relation-ship of Pt versus x in the ternary system Zn12xMnxSe,

ob-served that an apparently different behavior existed in the higher-impurity-concentration ternary in contrast to the re-sult of the lower-x ternary investigated by Qadri et al.6and Ves et al.15. Thus, the transition pressure did not manifest a strong dependence on the Mn concentration. Furthermore, our results show that a reduction of transition pressure was

also present in the nonmagnetic ternary compound

Zn0.9Cd0.1Se. This is a manifestation of the fact that the hy-bridization of the 3d orbitals of the magnetic ion Fe or Mn might not be the main reason for the reduction of the transi-tion pressure in the ternary alloys of ZnSe. It is also known the covalent radius of Cd is 1.48 Å which is larger than that

~1.25 Å! of Zn. Thus, the reduction of the phase-transition

FIG. 3. V/V0 vs pressure for the B3 and B1 phases of

Zn0.84Fe0.16Se, Zn0.76Mn0.24Se, and Zn0.9Cd0.1Se, respectively. The

symbols A, B, and C indicate the transition pressures of the B3 to

B1 phase for Zn0.84Fe0.16Se, Zn0.76Mn0.24Se, and Zn0.9Cd0.1Se,

re-spectively.

TABLE I. The values of K0 and K08 for Zn0.84Fe0.16Se,

Zn0.76Mn0.24Se, and Zn0.9Cd0.1Se under and above the phase

transi-tion ~B3 and B1 phases! obtained from the fitting process by Xu

et al.~Ref. 14!. K0is the isothermal bulk modulus at zero pressure,

and K08 is the pressure derivative of the isothermal bulk modulus

evaluated at zero pressure.

Sample Phase K0~GPa! K08

Zn0.84Fe0.16Se B3 58.8560.22 4.1260.19 B1 80.1561.69 3.6760.91 Zn0.76Mn0.24Se B3 60.4860.26 4.3760.16 B1 70.8661.61 3.6460.87 Zn0.9Cd0.1Se B3 60.2360.29 4.3260.18 B1 97.0261.74 3.9760.85 18 BRIEF REPORTS PRB 58

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pressure caused by the decrease of the covalent radius of the impurity ion in the ZnMSe system proposed by Qadri et al. could not be correct.

To explain the reduction of the phase-transition pressure of the impurity mixing semiconductor, let us consider the volume change of the unit cell for phase transition from the

B3 to B1 phase in Table II. One can note that the increase of

the percentage of the reduction of phase-transition pressures with respect to 14.4 GPa of ZnSe relates prominently to the increasing percentage of the reduction of the volume changes for our three samples while phase transition from B3 to B1 occurred. The percentage of the reduction of the volume changes is the ratio of the B1 volume to the B3 volume

times 100% at Pt. The above measurements indicate that

decreasing in the phase-transition pressure Pt for a phase

transition from the B3 to B1 phase can be related to the increase of the percentage of the reduction of the volume

changes (DV/V0), by the expression [email protected]

(DV/V0)20.0281(DV/V0)2# in GPa for our cases of the

Zn12xMnxSe, M5Cd, Fe, and Mn system. Therefore, the

greater the percentage of the reduction of the volume de-crease of the B3 to B1 phase transition is, the greater the percentage of the reduction of the phase-transition pressure can be obtained in ZnSe-based ternary compound

semicon-ductors. Hence, the fractional volume changes (DV/V0),

while at the B3 to B1 phase transition might be the source of the reduction of the phase transition pressure from B3 to B1 for ZnSe compound semiconductors of random kinds of im-purity ions.

In summary, our EDXD data showed that the bulk modu-lus for Zn0.84Fe0.16Se, Zn0.76Mn0.24Se, and Zn0.9Cd0.1Se is

58.8560.22, 60.4860.32, and 60.2360.29 GPa before

phase transition and the pressure derivative is 4.1260.16, 4.3760.21, and 4.3260.18, respectively. The greater the in-crease of the fractional volume changes while at the phase-transition~ B3 to B1! region, the greater the decrease of the reduction in the semiconductor-metal phase-transition pres-sure can be obtained. No apparent effect of 3d electronic hybridization can be observed in our works. We suggest that the effect of increasing the fractional volume change of ZnSe-based ternary semiconductors with any kind of impu-rity ions may be the main reason to reduce the stability of the

B3 phase under the application of pressure.

This work was supported by the National Science Coun-cil, Taiwan under Grant Nos. NSC87-2112-M-009-009 at NCTU, NSC86-2112-M-033-012 at CYCU, and NSC 85-2111-M-001-002 at IES.

*Author to whom correspondence should be addressed.

1

W. Meredith, G. Horsburgh, G. D. Brownlie, K. A. Prior, B. C. Cavenett, W. Rothwell, and A. J. Dann, J. Cryst. Growth 159, 103~1996!.

2Diluted Magnetic Semiconductors, Semiconductors and Semimet-als, edited by J. K. Furdyna and J. Kossut, Vol. 25~Academic

Press, New York, 1988!; Semimagnetic Semiconductors and

Di-luted Magnetic Semiconductors, edited by M. Balkanski and M.

Averous ~Plenum Press, New York, 1991!; J. Kossut and W. Dobrowolski, in Handbook of Magnetic Materials, edited by K. H. Buschow~North-Holland, Amsterdam, 1993!, Vol. 7.

3E. K. Suh, A. K. Arora, A. K. Ramdas, and S. Rodriguez, Phys.

Rev. B 45, 3360 ~1992!; E. Oh, R. G. Alonso, I. Miotkowski, and A. K. Ramdas, ibid. 45, 10 934~1992!.

4

C. M. Lin, D. S. Chuu, T. J. Yang, W. C. Chou, J. A. Xu, and E. Huang, Phys. Rev. B 55, 13641~1997!.

5A. Twardowski, T. Dietl, and M. Memianiuk, Solid State

Com-mun. 48, 845~1983!.

6S. B. Qadri, E. F. Skelton, A. W. Webb, N. Moulton, J. Z. Hu,

and J. K. Furdyna, Phys. Rev. B 45, 5670~1992!.

7J. Bak, U. Venkateswaran, C. L. Mak, R. Sooryakumar, and B. T.

Jonker, J. Phys. Chem. Solids 56, 563~1995!.

8A. K. Arora and T. Sakuntala, Phys. Rev. B 52, 11 052~1995!. 9A. K. Arora, E. K. Suh, U. Debska, and A. K. Ramdas, Phys.

Rev. B 37, 2927~1988!.

10P. Maheswaranathan, R. J. Sladek, and U. Debska, Phys. Rev. B

31, 5212~1985!.

11S. B. Qadri, E. F. Skelton, A. W. Webb, J. Z. Hu, and J. K.

Furdyna, in High-Pressure Science and Technology, Proceed-ings of the Joint IARA/APS Conference, edited by S. C. Schmidt, J. W. Shaner, G. A. Samara, and M. Ross, AIP Conf. Proc. No. 309~AIP, New York, 1993!, pp. 347–349.

12J. Xu, High Temp.-High Press. 19, 661~1987!.

13O. L. Anderson, D. G. Isaak, and S. Yamamoto, J. Appl. Phys.

65, 1534~1989!.

14

J. Xu, J. Z. Hu, L. C. Ming, E. Huang, and H. Xie, Geophys. Res. Lett. 21, 161~1994!.

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Commun. 57, 335~1986!.

16S. B. Qadri, E. F. Skelton, A. W. Webb, E. R. Carpenter, Jr., M.

W. Schaefer, and J. Furdyna, Phys. Rev. B 35, 6868~1987!. TABLE II. The phase transition pressure decrease with increasing volume change of Zn0.84Fe0.16Se,

Zn0.76Mn0.24Se, and Zn0.9Cd0.1Se, respectively.

Sample

(DV/V0): the

fractional volume changes from

the B3 to B1 phase ~with respect to the B3

volume while at Pt!

(DPt/14.4): percentage

of the reduction of the B3 to B1 phase-transition pressure~GPa!

~with respect to 14.4 GPa of ZnSe! Pt: B3 to B1 phase-transition pressure ~GPa! Zn0.84Fe0.16Se 13.5% 20.8% 11.460.5 Zn0.76Mn0.24Se 16.3% 33.3% 9.660.5 Zn0.9Cd0.1Se 16.1% 34.0% 9.560.3 PRB 58 BRIEF REPORTS 19

數據

FIG. 2. The variation of d hkl ~Å! of Zn 0.9 Cd 0.1 Se with pressure
FIG. 3. V/V 0 vs pressure for the B3 and B1 phases of

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