Effect of Ag on the microstructure and electrical properties of ZnO
Shu-Ting Kuo
a, Wei-Hsing Tuan
a,∗, Jay Shieh
a, Sea-Fue Wang
baDepartment of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
bDepartment of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, Taiwan Received 7 October 2006; received in revised form 14 February 2007; accepted 23 February 2007
Available online 14 May 2007
Abstract
Various amounts of silver particles, 0.08–7.7 mol%, are mixed with zinc oxide powder and subsequently co-fired at 800–1200◦C. The effects of Ag addition on the microstructural evolution and electrical properties of ZnO are investigated. A small Ag doping amount (<0.76 mol%) promotes the grain growth of ZnO; however, a reversed trend in grain growth is observed for a relatively larger Ag addition (>3.8 mol%). It is evident that a tiny amount of Ag (∼0.08 mol%) may dissolve into the ZnO lattice. High-resolution TEM observations give direct evidences on the segregation of Ag solutes at the ZnO grain boundaries. The grain boundary resistance of ZnO increases 35-fold with the presence of Ag solute segregates. The Ag-doped ZnO system exhibits a nonlinear electric current–voltage characteristic, confirming the presence of an electrostatic barrier at the grain boundaries. The barrier is approximately 2 V for a single grain boundary.
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Keywords: Microstructure-final; Electrical properties; Impedance; ZnO; Ag
1. Introduction
Zinc oxide (ZnO) is an n-type semiconductor with a wide band gap (3.437 eV at 2 K),1,2and has been used as the material for surge suppressors, gas sensors and transducers, etc.3–6For many electrical applications, silver and silver alloys are used as the electrode materials. In order to reduce the manufacturing cost, the electrodes are frequently co-fired with ZnO to elevated temperatures. ZnO and Ag may interact with each other during co-firing; however, such interaction has received relatively little attention in the literature.
In a study conducted by Fan and Freer,7 the effects of 1000 ppm of Ag doping on the electrical properties of ZnO varis-tor compositions (i.e. ZnO mixed with Bi2O3, Sb2O3, Co2O3,
Cr2O3, MnO2and B2O3) were studied. They found that both the
grain and grain boundary resistances increase with the addition of Ag, and proposed that Ag+could substitute Zn2+and acts as an acceptor in ZnO, expressed as
2Ag−→2AgZnO Zn+ VO•• (1)
∗Corresponding author. Tel.: +886 2 2365 9800; fax: +886 2 2363 4562. E-mail address:tuan@ccms.ntu.edu.tw(W.-H. Tuan).
Due to the formation of Ag acceptors, the grain resistance is increased. Fan and Freer also suggested that Ag+ may behave like many other monovalent dopant ions (e.g. Na+and K+) which have the ability to occupy both the lattice and interstitial sites (i.e. amphoteric dopants), expressed as
2Ag−→AgZnO Zn+ Agi• (2)
They proposed that AgZn may occupy the grain bound-ary sites, and consequently, the grain boundbound-ary resistance is increased. The effects of Ag addition on the microstructural evolution of ZnO during sintering were not addressed in their study.
In a study conducted by Jose and Khadar,8nano-sized ZnO
and Ag (5–30 wt.%) particles were mixed together, and the impedance spectrums of the green compacts were studied. Both the grain and grain boundary resistances of ZnO increase slightly with the addition of nano-sized Ag particles. Jose and Khadar suggested that the increase in the resistances is related to the presence of Ag particles at the grain boundaries and triple junc-tions of the nanocrystalline ZnO. In their study the specimens (i.e. green compacts) were not co-fired at an elevated tempera-ture. A more intense Ag–ZnO interaction might be observed if a suitable heat treatment was applied.
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uniaxial pressure of about 25 MPa. These sample discs were sintered at 800–1200◦C in air for 1 h, with the heating and cooling rates of 5◦C/min. The weight loss during sintering was minimal.
The densities of the specimens after sintering were deter-mined by the Archimedes water immersion method. The relative densities were estimated by using 5.68 g/cm3 for ZnO and 10.5 g/cm3 for Ag.9,10 X-ray diffractometry (XRD, PW1830, Philips Co., the Netherlands) was used for phase analysis. The XRD was operated at 35 kV and 20 mA with a scanning rate of 3◦ 2θ/min. The surfaces of the specimens submitted for XRD analysis were covered with a thin layer of silicon paste used as an external standard to calibrate the peak position. For microstructure observation, the specimens were ground with SiC abrasive papers first and then polished with Al2O3
parti-cles. The polished surfaces were etched with dilute hydrochloric acid. The microstructures were observed by scanning electron microscopy (SEM). An in-house image analysis technique was used to determine the grain size and its distribution. Approx-imately, 400–500 grains were measured for each composition specimen. For transmission electron microscope (TEM) obser-vation, the specimens were ground, dimpled and ion-milled to electron transparency. Ion milling was performed using a precision ion polishing system (Model 691, GATAN, USA) at an accelerating voltage of 5 kV and a milling angle of 5◦. The TEM analysis was conducted using a field-emission TEM (TECNAI F30, FEI Co., the Netherlands) operated at 300 kV.
For impedance and current–voltage (I–V) measurements, the sintered specimen discs were lapped to ensure the parallelness of the two circular faces, onto which top and bottom circular Ag electrodes (area = 28 mm2) were applied. The thickness of the lapped specimens was about 0.8 mm. Impedance spectroscopic measurements were carried out using an impedance analyzer (HP 4194 A, Hewlett-Packard Co., USA) over the frequency range from 100 Hz to 5 MHz at a signal level of 500 mV and a measurement temperature of 120◦C. The resistance of the spec-imen was determined from the real-axis intercepts of the fitted semicircle for the experimental data in the impedance spectrum. The I–V characteristics of the Ag-doped ZnO specimens were measured using a dc current method at currents ranging from 1A to 1 A.
Fig. 1. XRD patterns of undoped and Ag-doped ZnO specimens sintered at 1200◦C for 1 h (specimen surface was coated with Si).
3. Results
3.1. Phase analysis
Fig. 1shows the XRD patterns of the Ag-doped ZnO speci-mens sintered at 1200◦C for 1 h. The XRD patterns reveal that apart from ZnO and Ag, no other reaction phases are present. The Si peak is resulted from the coated Si paste. From the posi-tion of the Si peak, it is possible to calibrate the values of ZnO peaks.
It is evident that with increasing Ag doping level, the (1 0 0), (0 0 2) and (1 0 1) peaks of ZnO shift to the right progressively. Using these characteristic peaks, the lattice parameters a and c can be calculated by the following equation11:
d = a
(4/3)(h2+ k2+ hk) + (a2/c)l2 (3)
In the above equation, h, k and l are the indices of the peak, and
d is the planar distance. From the values of a and c, the unit cell
volume can be determined.Fig. 2clearly shows that the unit cell volume of ZnO decreases rapidly upon adding a small amount of Ag (<0.76 mol%). This decrease in the unit cell volume is halted when the doping amount of Ag is above 0.76 mol%.
3.2. Microstructure analysis
Fig. 3 shows the relative densities of the specimens as a function of sintering temperature. The sintered density increases slightly with Ag doping. The SEM micrographs of the Ag-doped ZnO specimens sintered at 1200◦C for 1 h are shown inFig. 4. It is evident that most Ag inclusions locate at the boundaries and triple junctions of ZnO grains. Silver is a ductile metal, and grinding and polishing of specimen may deform the Ag inclu-sions, resulting in the appearance of a higher volume fraction of Ag.12The Ag content perceived from the SEM micrographs
Fig. 2. Unit cell volume of ZnO as a function of Ag-doping content.
Fig. 3. Relative densities of undoped and Ag-doped ZnO specimens sintered at 800–1200◦C for 1 h.
The average and coefficient of variation of the grain size of the specimens are listed in Table 1. It is evident from Fig. 4 andTable 1that a small amount of Ag (<0.76 mol%) promotes the grain growth of ZnO. However, a larger amount of Ag (e.g. 7.7 mol%) induces large inclusions and hinders the grain growth. Typical grain size distribution curves for the Ag-doped ZnO specimens are shown inFig. 5. The mean size of ZnO grains is
Table 1
Mean size and size distribution of ZnO grains in undoped and Ag-doped ZnO specimens sintered at 1200◦C for 1 h
Grain size (m) Coefficient of variation (%)a Undoped ZnO 7.5± 4.1 55 ZnO + 0.08 mol% Ag 7.2± 2.8 39 ZnO + 0.76 mol% Ag 10.4± 4.1 39 ZnO + 3.8 mol% Ag 7.9± 3.4 43 ZnO + 7.7 mol% Ag 5.7± 2.4 42
aStandard deviation/mean value of grain size.
Fig. 4. SEM micrographs of (a) undoped, (b) 0.76 mol% Ag-doped, and (c) 7.7 mol% Ag-doped ZnO specimens sintered at 1200◦C for 1 h.
strongly dependent on the amount of Ag doping. Furthermore, the addition of Ag noticeably reduces the scattering of grain size. A TEM image of an Ag inclusion at the triple junction of ZnO grains is shown inFig. 6; the corresponding energy-dispersive X-ray spectrometry (EDX) patterns are also shown. The spot size of the electron beam for the TEM-EDX analysis is 6 nm. The TEM specimen is of 0.76 mol% of Ag doping, an amount which
Fig. 5. Grain size distributions of undoped and 0.76 and 7.7 mol% Ag-doped ZnO specimens sintered at 1200◦C for 1 h.
is slightly higher than the solubility determined by the XRD analysis. The Ag contents in positions 1, 2 and 3 shown in the TEM image are 92, 2 and close to 0 at%, respectively. The EDX patterns show that at position 2, which is at a grain boundary 200 nm away from the Ag inclusion, a small Ag signal is still detected (seeFig. 6c). In contrast, position 3, which is within the ZnO grain and 50 nm away from the Ag inclusion, exhibits almost no Ag signal (seeFig. 6d). The TEM-EDX analysis gives direct evidences on the segregation of Ag solutes at the ZnO grain boundaries.
3.3. Electrical properties
Fig. 7shows the impedance spectrums of the Ag-doped ZnO specimens. The resulting resistances of the specimens calcu-lated from their spectrums are listed inTable 2. The addition of Ag reduces the grain resistance of ZnO, regardless the doping percentage. In contrast, the grain boundary resistance increases 35-fold to 8800 k when a tiny amount of Ag, 0.08 mol%, is added. Further increasing the Ag doping level lowers the grain boundary resistance. When 7.7 mol% of Ag is added, the mea-sured grain boundary resistance is 550 k, still higher than that of pure ZnO.
Fig. 8shows the I–V curves for the Ag-doped ZnO specimens. An approximate linear relationship between current density and electric field is observed for the pure ZnO specimen,
indicat-Table 2
Grain and grain boundary resistances of undoped and Ag-doped ZnO specimens sintered at 1200◦C for 1 h Grain resistance () Grain boundary resistance (k) Undoped ZnO 370 250 ZnO + 0.08 mol% Ag 60 8800 ZnO + 0.76 mol% Ag 130 2400 ZnO + 3.8 mol% Ag 20 2900 ZnO + 7.7 mol% Ag 200 550
determine the lattice parameters of HfO2and ZrO2crystals.13
Their results had demonstrated that accuracy of the technique could be as high as 0.0001 nm. Therefore, the XRD technique together with Si internal standard employed in the present study is a reliable and accurate technique. By using such technique, the solubility of Ag in ZnO can thus be determined.
The XRD patterns indicate that the solubility of Ag in ZnO is between 0.08 and 0.76 mol% (seeFig. 1). The SEM image shown inFig. 4b also suggests a solubility less than 0.76 mol%. Results from the XRD and TEM analyses suggest that no chem-ical reaction takes place between Ag and ZnO. However, the volume of ZnO unit cell decreases as a small amount of Ag (<0.76 mol%) is added. This implies that a minute amount of Ag is dissolved into the ZnO lattice after co-firing at 1200◦C. The size of Ag+ ion (0.122 nm) is larger than that of Zn2+ion (0.088 nm),14and therefore the level of substitution of Zn by Ag is expected to be quite low—about 0.08 mol% or slightly higher as indicated by the XRD test. Based on the TEM observation, most Ag solutes tend to segregate at the grain boundaries of ZnO. When the amount of Ag doping is less than 0.76 mol%, the presence of Ag promotes the densification and grain growth of ZnO. Furthermore, the scattering of ZnO grain size is reduced with the addition of Ag. In other words, the Ag solutes act as a microstructure stabilizer to the ZnO grains. The vapor pressure of Ag is relatively high at elevated temperatures,15and thus Ag vapor is readily transported during sintering through the pore channels within the ZnO powder compact. Such a vapor trans-port mechanism is essential to the distribution of a second phase (Ag in this case) especially when its amount is low.16
4.2. Role of Ag solutes
Due to the charge difference between Ag+and Zn2+, the sub-stitution of Zn by Ag at the lattice sites would result in the formation of Ag acceptors, as suggested by Eq.(1). The for-mation of acceptors is usually accompanied with an increase in grain resistance.7However, the decrease in grain resistance with Ag doping observed in the present study rules out this mecha-nism (seeTable 2). This decrease in grain resistance is likely to be contributed mainly from the formation of oxygen vacancies with Ag doping. The increase in oxygen vacancy concentra-tion promotes the densificaconcentra-tion of ZnO grains (seeFig. 3). The
Fig. 6. (a) TEM image of an Ag inclusion in the 0.76 mol% Ag-doped ZnO specimen. The corresponding EDX patterns for positions 1, 2 and 3 in the TEM image are shown in (b), (c) and (d), respectively.
decrease in grain resistance is minor; thus, an increase in free electron concentration is not likely.
Typically the increase in density enhances the grain growth rate. Furthermore, the radius of Ag+is much larger than that of
Zn2+; the segregation of Ag ions may hence induce considerable disorder or distortion near the grain boundaries.17Such disorder may provide routes or spaces for fast mass transportation. The ZnO grains thus grow faster due to the presence of Ag solutes
Fig. 7. Impedance spectrums of undoped and Ag-doped ZnO specimens sintered at 1200◦C for 1 h (spectrums were measured at 120◦C).
near the grain boundaries. This is likely the main reason why the grain size of the Ag-doped ZnO specimens with low Ag contents is large.
The grain boundary resistance of ZnO increases one order of magnitude after the addition of a very small amount of Ag dopant. It suggests the presence of Ag ions at the grain bound-ary. Due to the difference of ionic charge and radius between Zn2+and Ag+, the segregation of Ag at the grain boundary of ZnO is preferred. The Ag concentration at grain boundary is much higher than 0.08 mol% (see Fig. 6c). Such segregation may establish a space charge zone near the grain boundary.18 Due to the presence of Ag dopant in the lattice, the XRD–ZnO peaks are shifted.
Previous studies have found that many monovalent dopants, such as K+ and Na+, act as amphoteric dopants.19,20 In the present study, Ag+is likely to act as an amphoteric dopant and occupy both the lattice and interstitial sites since Ag solutes are not acceptors in ZnO. Ag+ would preferentially choose to sit in the vicinity of grain boundaries due to its large ionic radius.
Fig. 8. I–V curves for undoped and Ag-doped ZnO specimens sintered at 1200◦C for 1 h.
not only the mean grain size but also the grain size scattering. In the present study, the number of Ag inclusions produced at high doping amounts is not enough to pin all grain boundaries (seeFig. 4c). The ability of Ag inclusions to reduce the size scattering of ZnO grains is therefore similar to that of Ag solute segregates.
The formation of Ag–ZnO interfaces due to Ag inclusions increases the resistance of the Ag-doped ZnO system. The grain boundary resistance of the ZnO–0.08 mol% Ag specimen is the highest among the Ag-doped ZnO specimens, indicating that the Ag solute segregates can induce a much higher resistance. The grain boundary resistance decreases with increasing Ag content, suggesting that a decrease in the distance between Ag inclusions reduces the grain boundary resistance.
5. Conclusion
The effects of Ag addition on the microstructural evolution and electrical properties of ZnO have been investigated. It is found that a small amount of Ag, around 0.08 mol% or slightly higher, can dissolve into the ZnO lattice. The presence of Ag solutes increases the rates of densification and grain growth. The Ag solutes tend to segregate at the grain boundaries, and this segregation of Ag+ions significantly raises the grain boundary resistance and establishes an electrostatic barrier against electron transportation. The barrier is approximately 2 V for a single grain boundary.
Acknowledgement
Financial support is provided by the National Science Coun-cil, Taiwan, under the contract number NSC94-2216-E-002-008.
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