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optimization for EBL Parameters on the Moth-Eye Etfects of Anti-Reflection Matrix Structure

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The purpose of this paper is to proceed the exposure in the SU-8

,. ^[lCgative ^tone photoresists utilizing Electron Beam lithography(EBL)The influence of the parameters on the photoresists can be controlled by EBL, and the optimum control tOnditions can also be found combining Taguchi design of experiment. We can construct artifical anti-reflection matrix structure through the anti-reflection characteristics of the

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