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ҁӦ᎜ᕏྍΖ࣬ՏౢғᏔႝၡ

6.1 Ζ࣬Տԛᒋݢफ़ᓎషᓎᏔ೛ीᆶჴ

6.1.3 ҁӦ᎜ᕏྍΖ࣬ՏౢғᏔႝၡ

122

6.1.2 ԛᒋݢफ़ᓎషᓎᏔႝၡ

Ӣႝ඲ᡏޑߚጕ܄੝፦Ǵ྽ૻဦҗ୷ཱུ຾ΕǴӧ໣ཱུᆄр౜ᒋݢǴӆ ճҔӧٿᗭႝ඲ᡏӚ୷ཱུᆄᒡΕ࣬ৡ180ࡋޑૻဦǴӚ collector ᆄߡ཮ౢғ ӕ࣬ՏޑଽኧᒋݢᆶϸӛޑڻኧᒋݢǴஒٿޣ࣬уǴಃΒᒋݢૈໆஒ཮ന εǴࡺૈٰ৾٬ҔǶךॺа Gilbert Double Balance Mixer ࣁЬࢎᄬаቚуჹ ᆀ܄Ǵ੃ନځдόाޑᒋݢϷᚇૻǶ

6.1.3 ҁӦ᎜ᕏྍΖ࣬ՏౢғᏔႝၡ

ҁӦਁᕏᆄࢂஒৡ୏ LO ߞဦᒡΕ RC-CR ᘠݢᏔࡕǴౢғѤ࣬Տޑ LO ߞဦǶӆаკ 6.2 ޑБԄஒѤ࣬ՏߞဦᒡΕΖಔ౽ᓎ࣬уᏔ(Phase Shifting Adder)ǴӢԶౢғΖ࣬Տޑ LO ߞဦଌΕషᓎᏔǶ

კ 6.2 Ζ࣬ՏౢғᏔႝၡ

ಃϤക!!Ζ࣬Տԛᒋݢफ़ᓎషᓎᏔ೛ी!

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

123

ӵკ 6.3Ƕ45 ࡋ౽ᓎ࣬уᏔޑচ౛ࢂஒٿঁ࣬ৡ 90 ࡋޑߞဦᒡΕৡ୏

ܫεᏔǴനࡕӧᒡрਔӝٳǴߡ཮ஒٿޣޑ࣬Տӝٳӧٿޣޑύ໔ᒡрǶ ᖐٯٰᇥǴӵ݀ࢂ 0 ࡋᆶ 90 ࡋӝٳǴߡ཮ౢғ 45 ࡋᒡрǹԶ 90 ࡋᆶ 180 ࡋӝٳǴߡ཮ౢғ 135 ࡋᒡрǶԶӕ࣬౽ᓎ࣬уᏔ߾ࢂஒૻဦᆶԾρ࣬у ᒡрǴӢԜځ࣬ՏόᡂǶനࡕךॺ൩ૈӭளډѤಔᆶচӃѤಔখӳৡ 45 ࡋ ޑૻဦǴ܌аךॺ൩ԖΑӚ࣬ৡ 45 ࡋޑΖಔ LO ૻဦΑǶ

კ 6.3 ౽ᓎ࣬уᏔႝၡ

ӧ೛ीਔޑԵໆࣁ 45 ࡋ౽ᓎ࣬уᏔॄၩႝߔޑፓ᏾ᒧۓǴ౛ፕ΢ा

Кӕ࣬౽ᓎ࣬уᏔޑॄၩႝߔεD 2७ǴՠࢂࣁΑाளډӳޑ࣬Տྗዴ ࡋǴᔈ၀ाᒧ᏷λޑႝߔᆶλޑႝ඲ᡏǴ܌аӧന٫ϯਔǴDॶ೯த཮ຎ௃

ݩᒧӧ 1 ᆶ 2ϐ໔Ƕႝၡჹ౽ᓎ࣬уᏔ܌ౢғޑߞဦ࣬྽௵གǴ܌а՗ी

ႝၡᇤৡࢂߚதख़ाޑǶ

ಃϤക!!Ζ࣬Տԛᒋݢफ़ᓎషᓎᏔ೛ी!

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

124

ႝၡኳᔕ่݀

m1freq=

phase(a)=-135.1 deg2.850GHz m2 freq=

phase(b)=-45.01 deg2.850GHz

m3freq=

phase(c)=44.93 deg2.850GHz m4freq=

phase(d)=135.0 deg2.850GHz

2.0 2.5 3.0 3.5

phase(c), deg m3

phase(d), deg

m4

კ 6.4 Ѥ࣬ՏౢғᏔޑኳᔕ

m9time=

ts(I270)=4.207 V105.3psec m11 time=

ts(I270)=4.207 V456.1psec m10time=

ts(Q315)=3.707 V70.18psec m12 time=

ts(Q315)=3.707 V421.1psec

100 200 300 400 500 600 700

0 800

ts(I0), Vts(I180), Vts(I90), Vts(I270), V

m9 m11

ts(Q45), Vts(Q225), Vts(Q135), Vts(Q315), V m10 m12

კ 6.5 Ζ࣬ՏౢғᏔޑኳᔕ

ಃϤക!!Ζ࣬Տԛᒋݢफ़ᓎషᓎᏔ೛ी!

ಃϤക!!Ζ࣬Տԛᒋݢफ़ᓎషᓎᏔ೛ी!

ಃϤക!!Ζ࣬Տԛᒋݢफ़ᓎషᓎᏔ೛ी!

კ 6.10 I ᓎၰᙯඤቚ੻ჹ RF ф౗(RF=5.7004GHz; LO=2.85GHz)

m3RF_power=

ಃϤക!!Ζ࣬Տԛᒋݢफ़ᓎషᓎᏔ೛ी!

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

128

m1freq=

dB(S(1,1))=-27.1055.700GHz

2 4 6 8

0 10

-30 -25

-35 -20

freq, GHz

dB(S(1,1)) m1

კ 6.12 S11

ಃϤക!!Ζ࣬Տԛᒋݢफ़ᓎషᓎᏔ೛ी!

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

129

კ 6.13 Octet-Phases Subharmonic Mixer Die Photo(2Ø1mm2)

ໆෳਔךॺஒ٬Ҕ NDL ޑ on-wafer ଯᓎໆෳᕉნǶໆෳਔ٬ҔѦௗ

Rat-race ٰౢғךॺ܌ሡޑৡ୏ LO ૻဦǶӵკ 6.13 ࣁ඲ТྣТǴ඲Тޑε λࣁ 2Ø1mm2ǶӢࣁाѳ֡ϩଛߞဦ໺ሀޑၡ৩Ǵ܌аߎឦጕ՞ΑόϿႝၡ ޑय़ᑈǴќѦǴᗋाԵቾΠଞਔଞᆶଞϐ໔ޑӼӄຯᚆǴӢԜԖ೽ϩޑय़ ᑈࢂ೏ໆෳҔޑ Pad ܌੃઻Ƕҁႝၡࡕុໆෳπբஒ੮ࡑ҂ٰᝩុֹԋǶ

LO INPUT

IF OUTPUT DC PAD

RF

INPUT

ಃϤക!!Ζ࣬Տԛᒋݢफ़ᓎషᓎᏔ೛ी!

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

130

߄ 6.1 Octet-Phases Subharmonic Mixer ኳᔕᆶໆෳ่݀

Octet-Phases Subharmonic Mixer (GCT 2͢m GaAs HBT)

ʳʳ Simulationʳ Measurementʳ

DC Currentʳ 122.6mA@5Vʳ mA@5V

Conversion Gain(I)ʳ 22.331@LO:0dBmʳ dB@LO: dBmʳ

Conversion Gain(Q) 22.036@LO:0dBm dB@LO: dBm

Input P1dBʳ -15dBmʳ dBmʳ

IIP3ʳ -5dBmʳ dBmʳ

LO-IF Isolationʳ N/Aʳ dBʳ

LO-RF Isolationʳ N/Aʳ dBʳ

RF-IF Isolationʳ 52dBʳ dBʳ

S11ʳ -27dBʳ dBʳ

ಃΎക!!่ፕ

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

131

ಃΎക!

่ፕ

ӧҁጇፕЎύǴךॺճҔႝᓸႝࢬᙯᏤࢎᄬٰၲԋቨᓎϰଛޑᒡΕ ભǴ೛ीΑӭᅿᔈҔܭคጕ୔∡ᆛၡޑӓդ੝షᓎᏔǶќѦǴճҔፄኧफ़ᓎ

ࢎᄬჴ౜Αڀ᜔Ⴝૻဦ׭ڋޑᚈ҅ҬѤ࣬Տफ़ᓎᏔǶ ӧ TSMC 0.35um SiGe BiCMOS ᇙำБय़Ǻ

ֹԋΑ΋ঁճҔӅኳ଑௤ٰ௓ڋӅኳՏྗޑ 5.2GHz फ़ᓎ༾షᓎᏔǶ ჴᡍ่݀ᡉҢ༾షᓎᏔᏱԖ 16dB ޑᙯඤቚ੻ǵ66dB ޑ LO-IF ႖๊ࡋǵ 52dB ޑ LO-RF ႖๊ࡋǵ24dB ޑ RF-IF ႖๊ࡋǵ-21dBm ϐ P1dB ቚ੻ᓸ ᕭǵ-11dBm ϐ IIP3ǵᆶ 178.5mW (35.7mA@5V) ޑф౗੃઻Ǵ٠ЪڀԖࡐ ቨޑᒡΕߔלϰଛǶ

ֹԋ΋ঁճҔ LC ႝࢬӝԋᏔౢғൂᆄᒡрϐ 5.7GHz ϲᓎ༾షᓎᏔǶ ჴᡍ่݀ᆶኳᔕ่݀εठ಄ӝǴჴᡍ่݀ᡉҢషᓎᏔᏱԖ-4dB ޑᙯඤቚ

੻ǵ32dB ޑ LO-IF ႖๊ࡋǵ40dB ޑ LO-RF ႖๊ࡋǵ46dB ޑ IF-RF ႖๊

ࡋ ǵ -9.5dBm ϐ OP1dB ቚ ੻ ᓸ ᕭ ǵ -1.5dBm ϐ OIP3 ǵ ᆶ 15.18mW ([email protected]) ޑф౗੃઻Ǵ٠ЪڀԖࡐቨޑᒡΕߔלϰଛǶ

ಃΎക!!่ፕ

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

132

ჴ౜Α΋ঁ᏾ӝ໣ᕴϡҹ Rat-Race ᆶ LC ႝࢬӝԋᏔޑ 5.2GHz ϲᓎ

༾షᓎᏔǶჴᡍ่݀ᆶኳᔕ่݀εठ಄ӝǴჴᡍ่݀ᡉҢషᓎᏔᏱԖ-1dB ޑᙯඤቚ੻ǵ37dB ޑ LO-IF ႖๊ࡋǵ39dB ޑ LO-RF ႖๊ࡋǵ-10dBm ϐ OP1dB ቚ੻ᓸᕭǵ-6dBm ϐ OIP3ǵᆶ 37.95mW ([email protected]) ޑф౗੃

઻Ǵ٠ЪڀԖࡐቨޑᒡΕߔלϰଛǶ

ֹԋΑ΋ঁڀ᜔Ⴝૻဦ׭ڋޑ 5.2GHz ᚈ҅ҬѤ࣬Տफ़ᓎᏔǶჴᡍ่

݀ᡉҢफ़ᓎᏔӧа 2.7V ᏹբਔǴᏱԖ 1dB ޑᙯඤቚ੻ǵ48dB ޑ LO-IF ႖๊

ࡋǵ47dB ޑ LO-RF ႖๊ࡋǵ49dB ޑ RF-IF ႖๊ࡋǵ-19dBm ϐ P1dB ቚ੻

ᓸᕭǵ-9dBm ϐ IIP3ǵᆶ 27mW ([email protected]) ޑф౗੃઻Ǵ٠ЪڀԖ 47dB ޑ᜔Ⴝૻဦ׭ڋૈΚǶ

ӧ GCT 2.0um GaAs HBT ᇙำБय़Ǻ

ֹԋ΋ঁൂᆄᒡрൂᆄᒡΕޑ 5.2GHz फ़ᓎ༾షᓎᏔǶჴᡍ่݀ᡉҢ

༾షᓎᏔᏱԖ 35dB ޑᙯඤቚ੻ǵ27dB ޑ LO-IF ႖๊ࡋǵ26dB ޑ LO-RF ႖

๊ࡋǵ-17dB ޑ RF-IF ႖๊ࡋǵ-29dBm ϐ P1dB ቚ੻ᓸᕭǵ-25dBm ϐ IIP3ǵᆶ 675mW (135mA@5V) ޑф౗੃઻Ǵ٠ЪڀԖࡐቨޑᒡΕߔלϰ ଛǶ

ֹԋ΋ঁ᏾ӝ໣ᕴϡҹ Rat-Race ᆶൂᆄᒡрൂᆄᒡΕޑ 5.2GHz फ़ᓎ

༾షᓎᏔǶჴᡍ่݀ᡉҢ༾షᓎᏔᏱԖ 27.6dB ޑᙯඤቚ੻ǵ28dB ޑ LO-IF ႖๊ࡋǵ37dB ޑ LO-RF ႖๊ࡋǵ-1dB ޑ RF-IF ႖๊ࡋǵ-22dBm ϐ P1dB ቚ

੻ᓸᕭǵ-17dBm ϐ IIP3ǵᆶ 625mW (125mA@5V) ޑф౗੃઻Ǵ٠ЪڀԖ ࡐቨޑᒡΕߔלϰଛǶ

ୖԵЎ᝘!

[1] K.L. Fong, R.G. Meyer, “Monolithic Active Mixer Design,” IEEE Transactions on Circuits and Systems-II: Analog and Digital Signal Processing, vol. 46, no. 3, March 1999, pp. 231~239.

[2] C. C. Meng, T. H. Wu, T. H. Wu and G.W. Huang, “A 5.2 GHz 16dB Gain CMFB Gilbert Downconversion Mixer Using 0.35µm Deep Trench Isolation SiGe BiCMOS Technology,” IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, June 2004, pp.

975-978.

[3] B. Gilbert, “The MICROMIXER: A highly linear variant of the Gilbert mixer using a bisymmetric Class-AB input stage,” IEEE J. Solid-State Circuits, vol. 32, pp.

1412-1423, Sept. 1997.

[4] T. H. Wu, C. C. Meng, T. H. Wu and G.W. Huang, “A 5.7 GHz 0.35µm SiGe HBT Upconversion Micromixer with a Matched Single-ended Passive Current Combiner Output,” European Microwave Week - gallium arsenide and other

semiconductors application symposium (GAAS 2004), Amsterdam, Netherlands, Oct.

2004, pp. 323-326.

[5] T. H. Wu, C. C. Meng, T. H. Wu and G.W. Huang, “A 5.7 GHz Gilbert

Upconversion Mixer with an LC Current Combiner Output Using 0.35µm SiGe HBT Technology,” IEICE Trans. Electron., vol.E88-C, no. 6, pp. 1267-1270, June 2005.

[6] C. C. Meng, T. H. Wu and M. C. Lin, “Compact 5.2-GHz GaInP/GaAs HBT Gilbert Upconverter Using Lumped Rat-Race Hybrid and Current Combiner,” accept to be published in IEEE Microwave and Wireless Components Letters.

[7] T. H. Wu, C. C. Meng, T. H. Wu and G.W. Huang, “A Monolithic SiGe HBT Gilbert Upconverter With LC Current Mirror Load and Lumped-element Rat-race Balun,” submitted to IEICE Trans. Electron.

[8] T. H. Wu, C. C. Meng, T. H. Wu and G.W. Huang, “A Fully Integrated 5.2 GHz

[9] A. P. Freundorfer and C. Falt, “A Ka-band GaInP/GaAs HBT Double Balanced Upconvert Mixer using Lumped Element Balun,” IEEE MTT-S Int. Microwave Symp.

Dig., vol. 2, pp. 17-21, June 1996.

[10] S.J. Parisi, “A Lumped-Element Rat-Race Coupler,” Applied Microwaves, Aug/Sept 1989, p84

[11] Guillermo Gonzalez, “Microwave transistor amplifiers, analysis and design,”

Chapter 3, 2nd edition, Prentice-Hall, Inc., New Jersey, 1997.

[12] F. Behbahani, Y. Kishigami, J. Leete, and A. Abidi, “CMOS Mixers and

Polyphase Filters for Large Image Rejection,” IEEE J. of solid-state circuits, vol. 36, no. 6, June 2001.

[13] C. C. Meng, T. H. Wu, T. H. Wu and G.W. Huang, “A Fully Integrated 5.2 GHz Double Quadrature Image Rejection Gilbert Downconverter Using 0.35 µm SiGe HBT Technology,” European Microwave Week - gallium arsenide and other

semiconductors application symposium (GAAS 2004), Amsterdam, Netherlands, Oct.

2004, pp. 319-322.

[14] K.J. Koh, M.Y. Park, C.S. Kim, “Subharmonically Pumped CMOS Frequency Conversion (Up and Down) Circuits for 2-GHz WCDMA Direct-Conversion

Transceiver,” IEEE J. of Solid-State Circuits, vol. 39, no. 6, pp. 871-884, June 2004.

[15] ࡛ࣥࣔ,”୴᙮ٳ܄௽෗᙮ᕴ๻ૠፖኔ܂”,ഏمٌຏՕᖂጚՓᓵ֮, 2004 [16] ݚՕ೛,”෗᙮ᕴፖڍઌۯៀंᕴ”,ഏمխᘋՕᖂጚՓᓵ֮, 2003

[17] J. Durec and E. Main, “A linear class AB single-ended to differential

transconverter suitable for RF circuits,” IEEE MTT-S Int. Microwave Symp. Dig., vol.

2, June 1996, pp. 1071-1074.

[18] J. Durec, “An integrated silicon bipolar receiver subsystem for 900 MHz ISM band applications,” IEEE J. of Solid-State Circuits, vol. 33, No. 9, pp. 1352-1372, Sept. 1998.

[19] J. Crols and M. Steyaert, “Fully Integrated 900 MHz CMOS Double Quadrature Downconverter,” in Proc. ISSCC, session 8.1, San Francisco, Feb. 1995.

[20] J. Crols and M. Steyaert, “A Single-Chip 900 MHz CMOS Receiver Front-End with a High Performance Low-IF Topology,” IEEE J. of Solid-State Circuits, vol. 30, no. 12, pp. 1483-1492, Dec. 1995.

[21] M. Steyaert, M. Borremans, J. Janssens, B. D. Muer, N. Itoh, J. Craninckx, J.

Crols, E. Morifuji, H. S. Momose and W. Sansen, “A single-chip CMOS transceiver for DCS-1800 wireless communications,” in Proc. ISSCC, San Francisco, Feb. 1998.

[22] B. Gilbert, “A precise four-quadrant multiplier with subnanosecond response,”

IEEE J. Solid-State Circuits, vol. sc-3 no.4, pp. 365-373, Dec. 1968.

ፕЎว߄ᆶᝡᖻளዛ!

ፕЎว߄

[1] C. C. Meng, T. H. Wu, T. H. Wu and G.W. Huang, “A 5.2 GHz 16dB Gain CMFB Gilbert Downconversion Mixer Using 0.35µm Deep Trench Isolation SiGe BiCMOS Technology,” IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, June 2004, pp.

975-978.

[2] T. H. Wu, C. C. Meng, T. H. Wu and G.W. Huang, “A 5.7 GHz 0.35µm SiGe HBT Upconversion Micromixer with a Matched Single-ended Passive Current Combiner Output,” European Microwave Week - gallium arsenide and other

semiconductors application symposium (GAAS 2004), Amsterdam, Netherlands, Oct.

2004, pp. 323-326.

[3] C. C. Meng, T. H. Wu, T. H. Wu and G.W. Huang, “A Fully Integrated 5.2 GHz Double Quadrature Image Rejection Gilbert Downconverter Using 0.35 µm SiGe HBT Technology,” European Microwave Week - gallium arsenide and other

semiconductors application symposium (GAAS 2004), Amsterdam, Netherlands, Oct.

2004, pp. 319-322.

[4] T. H. Wu, C. C. Meng, T. H. Wu and G.W. Huang, “A Fully Integrated 5.2 GHz SiGe HBT Upconversion Micromixer Using Lumped Balun and LC Current

Combiner,” IEEE MTT-S Int. Microwave Symp., June 2005.

[5] T. H. Wu, C. C. Meng, T. H. Wu and G.W. Huang, “A 5.7 GHz Gilbert

Upconversion Mixer with an LC Current Combiner Output Using 0.35µm SiGe HBT Technology,” IEICE Trans. Electron., vol.E88-C, no. 6, pp. 1267-1270, June 2005.

ᝡᖻளዛ

[1]2004 CICګ࣠࿇।ᄎ ࠋ܂๻ૠᑻ

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