ϡҹ୏ᄊ੝܄ໆෳ

ӧҁჴᡍύ௦Ҕޑࢂ୯ৎ඲Тس಍೛ीύЈ(CIC)܌ගٮޑႜ৔೿Νୌਁ୏ໆෳس

಍Ϸམଛᆛၡϩ݋ሺ(network analyzer)ٰໆෳϡҹޑ୏ᄊៜᔈǴځࢎ೛БԄӵკ6.14܌

ҢǶკ6.15ࣁϡҹޑᓎ౗(frequency)ៜᔈໆෳ่݀ǴځӅਁᓎ౗ပӧ36 kHzǶ

ќѦǴऩӧϡҹޑځύϐ΋ޑᒡΕᆄǴᒡΕ10sin(2π*10³t)VޑႝᓸૻဦǴځѬႝཱུ

߾೛ۓࣁ႟ҷ੝Ǵ٬ளႝᓸৡ໻җᒡΕߞဦ،ۓǶӵკ6.16܌ҢǴϡҹ΢ޑѳ݈ځठ୏

ޑᓎ౗ࣁ០୏ႝᓸᓎ౗ޑٿ७ǴӕਔځՏ౽ໆऊࣁ90 nmǶ

җܭচӃ೛ीҔٰ྽଺ௗ᝻ႝཱུޑߎឦᙺਵ่ᄬǴ৒ܰڙډࡕᇙำᇑڅనޑװᔐ (ୖ5.1.2λ࿯ޑჴᡍ่݀)ǴӢԜճҔԜᇙำ܌ᇙբрٰޑϡҹǴځᒡрޑႝૻဦϝคݤ

೸ၸҢݢᏔ܈ႝᒮᢀჸໆෳډǶӢԜǴҞ߻ѝૈ೸ၸӀᏢس಍ᢀෳʑໆෳޑБԄٰᡍ᛾

Ԝϡҹޑᡄᒠфૈ[18]ǶΨӢࣁҞ߻၀ϡҹۘคႝ܄ૻဦᒡрǴӧҁፕЎύ٠҂ӆճҔ ၀ϡҹ຾Չᡄᒠфૈޑ܄ૈໆෳǶ

ʳ

კ 6.15 ӧ CMOS-MEMS ᇙำύǴϡҹޑӅਁᓎ౗ࣁ 36 kHzǶ

კ 6.16 ӧ COMS-MEMS ᇙำύǴ༾ᐒఓᡄᒠ႔ϐኩᄊϸᔈკǹᒡΕޑૻဦࣁ 10sin(2Ø 10³πt)VϷѳ݈Տ౽ऊ 90 nmǶ

6.3 λ λ่

ҁകև౜Αٿᅿόӕᇙำ܌ᇙբޑ༾ᐒႝᡄᒠ႔ϡҹϐໆෳჴᡍ่݀ǶӧԾՉࣴว ޑᇙำБय़ǴҁࣴزਥᏵin situᖓጢᔈΚਠ҅ݤǴගрӧѳ่݈ᄬ΢ӆ؈ᑈ΋ቫߎឦᖓ ጢǴᙖԜፓ࿯่ᄬϣ೽ޑූᎩᔈΚϐ೛ीǹவᢀෳѳ่݈ᄬޑ៻Ԕໆᡂϯ่݀Ǵᡍ᛾Α Ԝ೛ीБԄૈԋф጗ှѳ݈ӢූᎩᔈΚޑញܫ܌೷ԋޑ៻Ԕ׎ᡂໆǶӕਔǴҁЎਥᏵಃ

Βകޑ೛ी౛ፕǵಃΟകޑኳᔕ่݀ϷಃѤകޑᇙำ೛ी܌ჴբֹԋޑϡҹǴϡҹЁκ ߏ250 μmǴቨ100 μmϷ3.97 μmޑ໔ሜଯࡋǶ೸ၸϡҹϐ୏ᄊ੝܄ໆෳǴϡҹϐӅਁᓎ౗

ࣁ 40.03 kHzǵon resistance ≈^{100 Ω}ǵoff resistance Ǻ out of rangeǵ switching loss≈^1.482 nJǵmechanical/electrical lifetimeǺ10⁶ cycles / 2.4×10⁴ cyclesǶ ԜѦǴҗჴᡍ่݀ёᡍ᛾Ǵ ҁࣴز܌೛ीޑ༾ᐒႝᡄᒠ႔ڀԖNAND܈NOR႔ޑᡄᒠфૈǴЪ໻ሡा೸ၸ׳ׯޔࢬ

ୃᓸޑБԄǴόሡा׳ׯᐒఓ่ᄬ೛ीǴߡૈஒᡄᒠ႔ޑфૈӧNANDϷNOR႔໔բϪ ඤǶ

ӧCMOS-MEMS ᇙำБय़ǴϡҹЁκߏ260 μmǴቨ110 μmϷ1.5 μmޑ໔ሜଯࡋǶᗨ ฅҞ߻܌ᇙբрٰޑϡҹϝคႝૻဦᒡрǴՠ೸ၸჴᡍޑ่݀ёว౜type-1ޑᇙำ೛ी

ёӧԜᇙำύᕇளѳڶޑѳ่݈ᄬǴӧᏹբႝᓸࣁ10/0 VΠǴ౽୏ጄൎ 90 nmǴЪځӅ

ਁᓎ౗ࣁ36 kHzǶ

Ύ

ीǴځ125 μmߏޑᝌੌѳ่݈ᄬѝӛΠ៻Ԕ0.485 μmǶԜѦǴࣁΑाჴ౜ߎឦௗ᝻ޑҞ

኱ǴӵՖᡣྒྷᇑڅనૈӧѐନTi/TiN/Alޑߎឦ឴࣊ቫਔ٠ό཮װᔐϡҹ่ᄬ׷਑ࣁԜᇙ ำ೛ीޑനεࡷᏯǴӢԜӧԜᇙำύǴፓࢗΑѤᅿྒྷᇑڅన(᎑ᇑڅనǴAD-10Ǵьᛥለ

Ϸ⑲ᇑڅన)ǴՠԿҞ߻ࣁЗ٠҂ว౜ӝ፾ޑྒྷᇑڅనёၲډ೛ीҞ኱Ƕ

ӧϡҹޑໆෳ่݀೽ϩǺӧԾՉࣴวϐᇙำ೛ीБय़(ߎឦჹߎឦௗ᝻եྕᇙำ)Ǵ җܭᇙำڀഢၨቸ܄ޑ೛ीࢬำǴӢԜёჴ౜ҁፕЎ܌ගрޑϡҹೕ਱Ǵҗځᜢᗖޑϡ ҹᡄᒠၮᆉϐႝૻဦᒡрǶԜচࠠϡҹޑ೛ीЁκࣁߏ250 μmǴቨ100 μmϷ3.97 μmޑ໔ ሜଯࡋǶਥᏵჴᡍޑ่݀ǴԜϡҹޑёӧᓎ౗ࣁ100 HzǴႝᓸελࣁ25/-25VΠᏹբ٠ѝ

ӧ҂ٰޑࣴزύǴךॺஒࣴزֽ೽ߎឦԋࠠמೌǴځཷۺࣁᙖҗᜪ՟ᐒఓуπޑБ ԄǴ༾уπ่ᄬޑௗ᝻୵ǴٯӵǺճҔFIB (Focused Ion Beam)ӧௗ᝻ᆄֽ೽༾уπǹᗓ

΢ό਼ܰϯЪКߎ׳ڀখ܄ޑߎឦ׷਑Ǵӵკ7.1܌Ңޑȸႌ(Pt)ȹߎឦǶӵԜǴᔈёֹ

ӄׯ๓ௗ᝻ߎឦ਼ܰϯϷคႝૻဦᒡр฻ୢᚒǶ

(a) (b)

კ7.1 (a) ҂ᗓႌߎឦ߻ޑௗ᝻୵ (b) ᗓ΢ႌߎឦޑௗ᝻୵

ୖ

ୖԵЎ᝘

[1] N. Sinha, T. Jones, Zhijun Guo, and G. Piazza, ȸDemonstration of low voltage and functionally complete logic operations using body-biased complementary and ultra-thin ALN piezoelectric mechanical switches,ȹ in Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on, 2010, pp. 751-754.

[2] N. Abele, R. Fritschi, K. Boucart, F. Casset, P. Ancey, and A. M. Ionescu, ȸSuspended-gate MOSFET: Bringing new MEMS functionality into solid-state MOS transistor,ȹ in Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, 2005, pp. 479ȉ481.

[3] H. F. Dadgour and K. Banerjee, ȸDesign and Analysis of Hybrid NEMS-CMOS Circuits for Ultra Low-Power Applications,ȹ in 44th ACM/IEEE Design Automation Conference, 2007. DAC ȷ07, 2007, pp. 306-311.

[4] A. Raychowdhury, J. I. I. Kim, D. Peroulis, and K. Roy, ȸIntegrated MEMS switches for leakage control of battery operated systems,ȹ in Custom Integrated Circuits Conference, 2006. CICCȷ06. IEEE, 2006, pp. 457ȉ460.

[5] J. Heck et al., ȸUltra-high density MEMS probe memory device,ȹ Microelectronic Engineering, vol. 87, no. 5-8, pp. 1198-1203, May.

[6] S. W. Lee, R. Johnstone, and A. M. Parameswaran, ȸMEMS mechanical logic units:

design and fabrication with micragem and polymumps,ȹ in Electrical and Computer Engineering, 2005. Canadian Conference on, 2005, pp. 1513ȉ1516.

[7] T. J. Farmer and M. E. Zaghloul, ȸCMOS digital control circuit for MEMS switch based phased array antenna,ȹ in Antennas and Propagation Society International Symposium, 2005 IEEE, 2005, vol. 1, pp. 516ȉ519.

[8] K. E. Petersen, ȸMicromechanical membrane switches on silicon,ȹ IBM Journal of Research and Development, vol. 23, no. 4, pp. 376ȉ385, 1979.

[9] X. Lafontan et al., ȸEnvironmental test bench for reliability studies: influence of the temperature on RF switches with metallic membranes,ȹ in Proc. SPIE, 2002, vol. 4755, p. 624.

[10] R. E. Mihailovich et al., ȸMEM relay for reconfigurable RF circuits,ȹ Microwave and Wireless Components Letters, IEEE, vol. 11, no. 2, pp. 53-55, 2001.

[11] Z. J. Yao, S. Chen, S. Eshelman, D. Denniston, and C. Goldsmith, ȸMicromachined low-loss microwave switches,ȹ Microelectromechanical Systems, Journal of, vol. 8, no.

2, pp. 129-134, 1999.

[12] OMRON, ȸRF MEMS Switch 2SMES-01.ȹ .

[14] A. Hirata, K. Machida, H. Kyuragi, and M. Maeda, ȸA electrostatic micromechanical switch for logic operation in multichip modules on Si,ȹ Sensors and Actuators A:

Physical, vol. 80, no. 2, pp. 119ȉ125, 2000.

[15] R. Nathanael, V. Pott, Hei Kam, Jaeseok Jeon, E. Alon, and T.-J. K. Liu, ȸFour-Terminal-Relay Body-Biasing Schemes for Complementary Logic Circuits,ȹ IEEE Electron Device Letters, vol. 31, no. 8, pp. 890-892, Aug. 2010.

[16] V. Pott, H. Kam, R. Nathanael, J. Jeon, E. Alon, and T.-J. King Liu, ȸMechanical Computing Redux: Relays for Integrated Circuit Applications,ȹ Proceedings of the IEEE, vol. 98, no. 12, pp. 2076-2094, Dec. 2010.

[17] J. Jeon, V. Pott, H. Kam, R. Nathanael, E. Alon, and T.-J. King Liu, ȸSeesaw Relay Logic and Memory Circuits,ȹ Journal of Microelectromechanical Systems, vol. 19, no.

4, pp. 1012-1014, Aug. 2010.

[18] C. Y. Tsai, W. T. Kuo, C. B. Lin, and T. L. Chen, ȸDesign and fabrication of MEMS logic gates,ȹ Journal of Micromechanics and Microengineering, vol. 18, p. 045001, 2008.

[19] W. Fang, ȸ Determination of the elastic modulus of thin film materials using self-deformed micromachined cantilevers, ȹ Journal of Micromechanics and Microengineering, vol. 9, p. 230, 1999.

[20] C. H. Chu, W. P. Shih, S. Y. Chung, H. C. Tsai, T. K. Shing, and P. Z. Chang, ȸA low actuation voltage electrostatic actuator for RF MEMS switch applications,ȹ Journal of Micromechanics and Microengineering, vol. 17, p. 1649, 2007.

[21] M. Hill, C. O. Mahony, R. Duane, and A. Mathewson, ȸPerformance and reliability of post-CMOS metal/oxide MEMS for RF application,ȹ Journal of Micromechanics and Microengineering, vol. 13, p. S131, 2003.

[22] J. S. Pulskamp, A. Wickenden, R. Polcawich, B. Piekarski, M. Dubey, and G. Smith, ȸMitigation of residual film stress deformation in multilayer microelectromechanical systems cantilever devices, ȹ Journal of Vacuum Science & Technology B:

Microelectronics and Nanometer Structures, vol. 21, no. 6, p. 2482, 2003.

[23] J. A. Thornton and D. W. Hoffman, ȸStress-related effects in thin films,ȹ Thin Solid Films, vol. 171, no. 1, pp. 5-31, Apr. 1989.

[24] H. R. W., ȸin Physics of Thin Films,ȹ p. 211, 1966.

[25] ୯ࣽ཮ᆒஏሺᏔύЈ, ༾ᐒႝس಍מೌᆶᔈҔ. ӄ๮კਜ.

[26] W. Fang and J. A. Wickert, ȸPost buckling of micromachined beams,ȹ Journal of Micromechanics and Microengineering, vol. 4, p. 116, 1994.

[27] H. J.W. and K. W.T., ȸPostbuckling theory,ȹ Applied Mechanics Reviews, pp.

1353-1366, 1970.

[28] W. Fang and J. A. Wickert, ȸDetermining mean and gradient residual stresses in thin films using micromachined cantilevers, ȹ Journal of Micromechanics and Microengineering, vol. 6, p. 301, 1996.

[29] M. Mehregany, R. T. Howe, and S. D. Senturia, ȸNovel microstructures for the in situ measurement of mechanical properties of thin films,ȹ Journal of Applied Physics, vol.

62, no. 9, p. 3579, 1987.

[30] L.-L. Lin, R. T. Howe, and A. P. Pisano, ȸA passive, in situ micro strain gauge,ȹ in Micro Electro Mechanical Systems, 1993, MEMS ȷ93, Proceedings An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE., 1993, pp.

201-206.

[31] A. B. Horsfall et al., ȸ Direct measurement of residual stress in sub-micron interconnects,ȹ Semiconductor Science and Technology, vol. 18, no. 11, pp. 992-996, Nov. 2003.

[32] W. Fang and J. A. Wickert, ȸComments on measuring thin-film stresses using bi-layer micromachined beams,ȹ Journal of Micromechanics and Microengineering, vol. 5, p. 276, 1995.

[33] Y. H. Min and Y. K. Kim, ȸIn situ measurement of residual stress in micromachined thin films using a specimen with composite-layered cantilevers,ȹ Journal of Micromechanics and Microengineering, vol. 10, p. 314, 2000.

[34] S. T. Patton and J. S. Zabinski, ȸFailure Mechanisms of Capacitive MEMS RF Switch Contacts,ȹ Tribology Letters, vol. 19, no. 4, pp. 265-272, Aug. 2005.

[35] J. W. Tringe, T. A. Uhlman, A. C. Oliver, and J. E. Houston, ȸA single asperity study of Au/Au electrical contacts,ȹ Journal of Applied Physics, vol. 93, no. 8, p. 4661, 2003.

[36] H. Kam, V. Pott, R. Nathanael, J. Jeon, E. Alon, and T. J. K. Liu, ȸDesign and reliability of a micro-relay technology for zero-standby-power digital logic applications,ȹ in Electron Devices Meeting (IEDM), 2009 IEEE International, 2009, pp. 1ȉ4.

[37] L. V. A. Starman, J. R. Reid, R. T. Webster, and J. L. Ebel, ȸRF MEMS Switches for Antenna Applications.ȹ

[38] B. D. Jensen, L. L.-W. Chow, Kuangwei Huang, K. Saitou, J. L. Volakis, and K.

Kurabayashi, ȸEffect of nanoscale heating on electrical transport in RF MEMS switch contacts,ȹ Journal of Microelectromechanical Systems, vol. 14, no. 5, pp. 935-946, Oct. 2005.

[39] O. Rezvanian, M. A. Zikry, C. Brown, and J. Krim, ȸSurface roughness, asperity contact and gold RF MEMS switch behavior,ȹ Journal of Micromechanics and Microengineering, vol. 17, p. 2006, 2007.

[40] S. Majumder et al., ȸStudy of contacts in an electrostatically actuated microswitch,ȹ in Electrical Contacts, 1998., Proceedings of the Forty-fourth IEEE Holm Conference

[41] S. Majumder, N. E. McGruer, G. G. Adams, P. M. Zavracky, R. H. Morrison, and J.

Krim, ȸStudy of contacts in an electrostatically actuated microswitch,ȹ Sensors and Actuators A: Physical, vol. 93, no. 1, pp. 19ȉ26, 2001.

[42] Q. Ma et al., ȸMetal contact reliability of RF MEMS switches,ȹ in Proc. SPIE, 2007, vol. 6463, p. 646305.

[43] L. L. W. Chow, J. L. Volakis, K. Saitou, and K. Kurabayashi, ȸLifetime Extension of RF MEMS Direct Contact Switches in Hot Switching Operations by Ball Grid Array Dimple Design,ȹ IEEE Electron Device Letters, vol. 28, no. 6, pp. 479-481, Jun. 2007.

[44] ᑵ൤ϡ, ȸCMOS ༾ᐒႝس಍ϐ೛ीᆶᔈҔ.ȹ .

[45] T. L. Chen and R. Horowitz, ȸDesing and Fabrication of PZT-Actuated Silicon Suspensions,ȹ Mechatronics 2000.

[46] R. R. Craig, Mechanics of Materials, 2nd Edition, 2nd ed. Wiley, 1999.

[47] S. H. Ahn and Y. K. Kim, ȸSilicon scanning mirror of two DOF with compensation current routing,ȹ Journal of Micromechanics and Microengineering, vol. 14, p. 1455, 2004.

[48] J. Millman and A. Grabel, Microelectronics, 2nd ed. Mcgraw-Hill College, 1987.

[49] S. Tezuka, ȸThe adhesion problem for a microstructure with dimples,ȹ in SICE 2002. Proceedings of the 41st SICE Annual Conference, 2002, vol. 1, pp. 386ȉ389.

[50] L. Mercado, S. M. Kuo, T. Y. T. Lee, and L. Liu, ȸA mechanical approach to overcome RF MEMS switch stiction problem,ȹ in ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, 2003, pp. 377ȉ384.

[51] J. M. Gere and S. P. Timoshenko, Mechanics of Materials, 4th ed. PWS Pub. Co., 1997.

[52] ȸ MEMS and Nanotechnology Clearinghouse. ȹ [Online]. Available:

http://www.memsnet.org/news/.

[53] ȸ MatWeb, ȹ MATERIAL PROPERTY DATA. [Online]. Available:

http://www.matweb.com/index.aspx.

[54] R. Charavel, ȸStress release of PECVD oxide by RTA,ȹ in Proceedings of SPIE, Maspalomas, Gran Canaria, Spain, 2003, pp. 596-606.

[55] C. Domò_́ nguez, J. A. Rodrò_́ guez, M. Riera, A. Llobera, and B. Dò_́ az, ȸEffect of hydrogen-related impurities on the thermal behavior of mechanical stress in silicon oxides suitable for integrated optics,ȹ Journal of Applied Physics, vol. 93, no. 9, p.

5125, 2003.

[56] ᖙᅇႳ, ȸ؈ᑈΒ਼ϯޖᖓጢϐϯᏢ਻࣬௓ڋ,ȹ ڼԯ೯ૻ. [57] ȸProduct Data Sheet: AZ 5214E Image Reversal Photoresist.ȹ .

[58] T. Zhu, P. Argyrakis, E. Mastropaolo, K. K. Lee, and R. Cheung, ȸDry etch release processes for micromachining applications, ȹ Journal of Vacuum Science &

Technology B: Microelectronics and Nanometer Structures, vol. 25, no. 6, p. 2553, 2007.

[59] ഋ҉ᓄ, ȸCIC User Handbook ȉ 0.35 um CMOS MEMS Process v.2.0.ȹ .

[60] Cheng-Ting Ko et al., ȸ A Highly Sensitive CMOS-MEMS Capacitive Tactile Sensor,ȹ in Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on, 2006, pp. 642-645.

[61] M.-H. Tsai, C.-M. Sun, Y.-C. Liu, C. Wang, and W. Fang, ȸDesign and application of a metal wet-etching post-process for the improvement of CMOS-MEMS capacitive sensors,ȹ Journal of Micromechanics and Microengineering, vol. 19, no. 10, p.

105017, Oct. 2009.

[62] Y. N. Hua, S. Redkar, L. H. An, and G. B. Ang, ȸA study on silicon nodules due to the Si precipitation in wafer fabrication,ȹ in Semiconductor Electronics, 2000.

Proceedings. ICSE 2000. IEEE International Conference on, 2000, pp. 110-112.

[63] Z. Wenbin, C. Haifeng, X. Zhiqiang, L. Leilei, and Y. Zongguang, ȸW-plug via electromigration in CMOS process,ȹ Journal of Semiconductors, vol. 30, no. 5, p.

056001, May. 2009.