ᖓጢූᎩᔈΚໆෳמೌ

კ 1.16 ࣁදၹҔٰໆෳᖓጢᔈΚޑ୘ҔᐒѠ[25]Ƕځচ౛ࢂճҔ඲Тӧ؈ᑈᖓጢ׷

਑ࡕǴҗܭᖓጢᔈΚޑቹៜǴ඲ТޑԔ౗ъ৩཮ᒿϐᡂϯǴᙖԜٰ՗ᆉځᔈΚελǶԜ ᅿໆෳБԄǴ໻፾ӝҔаໆෳൂቫᖓጢޑᖓጢᔈΚǴЪѸ໪མଛۘ҂٬Ҕၸޑ඲༝Ƕࣁ

Αׯ๓ԜᗺǴ೚ӭޑࣴزճҔ༾่ᄬޑᡂ׎ٰໆෳ࣬ᜢޑᖓጢᔈΚǶҁፕЎஒϟಏ൳ᅿ ճҔ༾่ᄬ׎ᡂ੝܄܌೛ीޑᖓጢූᎩᔈΚໆෳמೌǶ

Ʉ1 ࡕ਋Ԕݤ[26]

όӕߏࡋϐᐏރ༾่ᄬ೏ញܫࡕǴᖓጢϣӸӧϐᓸᔈΚ೏ញܫǴ٬ளᝌੌ่ᄬڙډ ᓸᔈΚޑբҔԶౢғӵკ 1.17 ܌Ңޑ਋Ԕ(buckling)׎ᡂǴᙖҗϩ݋೭٤༾ᐏރ่ᄬౢ

ғ਋Ԕ׎ᡂǴջёीᆉрᖓጢޑѳ֡ᓸᔈΚǶฅԶǴਥᏵ Hutchinson ฻Γޑϩ݋[27]Ǵ ჴሞޑ༾ᐏރ่ᄬǴ཮Ӣ೚ӭচӢ٬ځӧᓸᔈΚۘ҂ౢғբҔਔǴ༾ᐏ่ᄬ൩ςӸӧ ȸଆۈ׎ᡂȹǶٯӵǴᖓጢϣऩᗋӸӧఊࡋᔈΚǵ൳Ֆ่ᄬޑόೕ߾܈ࢂᜐࣚచҹ(ୖ

ᜐࣚ௽ᙯݤ[28])฻ǴӵԜ཮٬ளӧໆෳਔǴคݤ҅ዴղᘐ༾ᐏރ่ᄬౢғ਋Ԕ׎ᡂϐ੿

҅׎ᡂǴԶ೷ԋໆෳ΢ౢғᇤৡǶ

კ 1.16 ᖓጢᔈΚϐໆෳᐒڋ[25]

კ 1.17 ༾ᐏރ่ᄬᝌੌࡕ܌ౢғޑ਋Ԕ౜ຝ [26]

Ʉ2 T่ࠠᄬݤ[29]

კ 1.18 ࣁ΋ T ׎ᔠෳ่ᄬǴԜ่ᄬࢂҗٿਥ༾ᐒఓኺ܌ಔӝԶԋǶӵკ܌ҢǴ྽

่ᄬኺ A ӢූᎩ஭ᔈΚ೏ញܫࡕԶԏᕭǴԜਔҭ஥୏่ᄬኺ B Ψౢғ׎ᡂ(δ)Ƕҁݤջ ਥᏵ่ᄬኺ B ޑ׎ᡂໆ(δ)ٰीᆉᖓጢ஭ᔈΚǶՠҗܭԜБݤࢂճҔӕѳय़ޑ׎ᡂໆٰ

،ۓᖓጢޑූᎩᔈΚǴ܌аሡ೛ीၨεϐ T ่ࠠᄬǴځᡂࠠໆω୼ܴᡉǴىаᙖҗໆෳ

ᐒѠᢀჸளډǴٯӵୖԵЎ᝘[29]္܌௦Ҕޑ T ׎่ᄬεऊሡा٬Ҕډ 4000 μm ߏǵ1600 μmቨޑթֽय़ᑈǶ

კ 1.18 T ࠠ༾ᔠෳ่ᄬӧᇑڅۭ׷ࡕǴූᎩᔈΚ೏ញܫࡕ܌ౢғϐ׎ᡂკ [29]

Ʉ3 ༾ෞ኱Ёݤ[30], [31]

༾ෞ኱Ёݤࢂ΋ᅿӕѳय़(in-plane)׎ᡂϐໆෳמೌǴځচ౛ࣁճҔᄫఎচ౛ٰ೛ी

΋༾ᐒఓ่ᄬǴ٬ځӕѳय़ϐ׎ᡂໆܫεԿёໆෳጄൎǶკ 1.19 ࣁय़ࠠ༾ෞ኱Ё่ᄬҔ

ٰໆෳᖓጢޑූᎩᔈΚǶӵკ܌ҢǴෳ၂ኺ(test beam)ޑߏࡋӢූᎩᔈΚޑញܫԶวғ ׯᡂǴځׯᡂޑ׎ᡂໆ஥୏༾ෞ኱Ёޑ่ᄬ௽ᙯ΋࣬ჹᔈޑفࡋǴᙖҗໆෳԜفࡋջё

՗ᆉрᖓጢޑූᎩᔈΚϷղᘐᖓጢࣁᓸᔈΚ܈஭ᔈΚǶӢࣁԜБݤѝሡाޔௗໆෳ༾ෞ

኱Ёޑ௽ᙯفࡋ٠ඤᆉӣෳ၂ኺޑՏ౽ໆջёໆෳᔠෳᖓጢޑූᎩᔈᡂǴӢԜڀԖໆෳ

ᙁܰǵଯᇙำ࣬৒܄฻ᓬᗺǶฅԶǴԜБݤӧໆෳྗዴ܄΢ΨӸӧ๱΋٤ୢᚒǴ᝽ӵǴ

ූᎩఊࡋᔈΚޑӸӧǴ཮Ꮴठ᏾ঁ่ᄬౢғрѳय़ޑՏ౽ǴԶቹៜډෳ၂ኺϐՏ౽ໆޑ ᠐ڗॶǶࣗԿऩ่ᄬౢғၸεޑ៻Ԕ׎ᡂǴёૈᗋ཮٬ள᏾ঁ೛ीֹӄѨਏǶԜѦǴ༾

ෞ኱Ё໪ा೛ी΋ѮεޑೱఎᐒᄬǴό໻཮՞Ᏽᝊ຦ޑ඲Тय़ᑈǴӕਔҭ཮ቚуෳ၂่

ᄬӧᝌੌਔޑ֚ᜤࡋǶ

კ 1.19 ᖓጢᔈΚϐໆෳᐒڋ [30], [31]

Ʉ5 ᜐࣚ௽ᙯݤ[28]

ӧрѳय़Ԅޑ׎ᡂϐໆෳמೌύǴനத࣮ډޑᐒᄬ೛ीǴߡࢂճҔ༾ᝌᖉኺٰໆෳ

ᖓጢޑූᎩᔈΚǴӵ W. Fang ک J.A. Wickert ฻ΓගрճҔൂ΋༾ᝌᖉኺ่ᄬٰໆෳᖓ ጢޑූᎩᔈΚ[28]Ƕдॺޑ೛ी౛ፕЬाࣁճҔൂਥᝌᖉኺ่ᄬ٠མଛ nominally clamped boundaryޑᜐࣚచҹϐ೛ۓǴӵკ 1.20 ܌ҢǴ྽༾ᝌᖉኺញрූᎩᔈΚࡕǴջ

཮ӧ่ᄬ΢วғٿᅿЬाϐ׎ᡂǺ(1) ڙѳ֡ᔈΚޑቹៜ܌ౢғޑȸᜐࣚ௽ᙯ(ୖკ 1.20 (a))ȹϷ (2) ڙఊࡋᔈΚቹៜ܌೷ԋޑȸ៻Ԕᡂ׎(ୖკ 1.20 (b))ȹǶਥᏵځ೛ी౛ፕǴ ךॺёаճҔ่ᄬᜐࣚ௽ᙯ܌೷ԋޑ௽ᙯفࡋ(θ)٠མଛځࣴزޑԖज़ϡનݤϐ࿶ᡍϦ ԄǴջё௢ᆉрᖓጢޑѳ֡ᔈΚǶฅࡕǴճҔځ่ᄬ៻Ԕᡂ׎܌ౢғޑԔ౗ъ৩Ǵٰी

ᆉрᖓጢޑఊࡋᔈΚǶ

კ 1.20 ༾ᝌᖉኺӧញܫрූᎩᔈΚࡕǴЬा཮ౢғٿᅿ׎ᡂǺ(a) ᜐࣚ௽ᙯ Ϸ(b) ៻Ԕ ᡂ׎[28]

Ʉ6 ᚈቫ่ᄬݤ[32], [33]

྽ࡑෳᖓጢޑࠆࡋλܭࢌ΋ЁκਔǴճҔԜᖓጢ܌ᇙբޑ༾ᔠෳ่ᄬǴࡐ৒ܰӢখ

܄ޑόىԶӧᇑڅ܈ࢂమࢱޑᇙำύᎁڙډઇᚯǴӢԜ߻य़܌ϟಏޑ൳ᅿמೌߡό፾ܭ Ԝᅿ௃ݩǶ܌а Fang[32]Ϸ Min [33]฻ΓϩձගрΑόӕޑᚈቫ่ᄬ೛ीݤٰှ،Ԝୢ

ᚒǶ

ӧ W. Fang[32]܌ගрޑᚈቫ่ᄬݤύǴځচ౛ࣁӃᇙ೷рӵკ 1.21 ܌ҢǴӧᜐࣚ

௽ᙯݤ္य़܌٬Ҕޑ༾ᝌᖉኺբࣁ୷ᘵ༾ᔠෳኺǴϐࡕӆஒࡑෳޑᖓጢ؈ᑈӧځ߄य़Ǵ

׎ԋ΋ᚈቫ่ᄬ(bilayer structure)Ƕௗ๱೸ၸ০኱ᙯඤޑБԄѝԵቾ୷ᘵ༾ᔠෳኺϷᚈቫ ኺ่ᄬӚձޑԔ౗ъ৩ک៻Ԕ׎ᡂໆϐᜢ߯Ǵջё௢ᆉрளࡑෳᖓጢޑූᎩᔈΚǶฅ ԶǴԜБݤёૈ཮ၶډ΋٤ୢᚒǴЀځࢂ྽ࡑෳᖓጢࢂճҔ CVD ޑᇙำ؈ᑈӧςᝌੌ

ޑ୷ᘵ༾ᝌᖉኺ΢Ǵࡑෳᖓጢёૈҭ཮ᗓӧځୁᏛ܈ङय़΢Զ೷ԋූᎩᔈΚ՗ෳᒱᇤǶ ӢԜǴMin ฻Γ[33]ଞჹ΢ॊޑୢᚒගрճҔӵკ 1.22 ܌Ңޑፄӝ׷਑ᝌᖉኺǴin-situ ໆෳ่ᄬϐᖓጢᔈΚǶӧдॺޑ೛ी౛ፕύǴځЬाচ౛ࣁᙖҗीᆉ؂΋ቫᖓጢύޑූ

(b)

(a)

׎ᡂໆ(tip deflection)ϐᜢ߯Ǵ௢ᆉрࡑෳᖓጢޑූᎩᔈΚॶǶԜѦǴόӕܭ W. Fang[32]

܌ගрޑᚈቫ่ᄬ೛ीБԄǴMin ฻Γ[33]܌೛ीޑᝌᖉኺ่ᄬǴځᜐࣚచҹࢂ௦Ҕ਀

ႄࠠᜐࣚ (clamped boundary)ǴЪ่ᄬᝌੌޑБԄࢂ௦ڗᡣ୷ᘵ༾ᝌᖉኺӧࡑෳᖓጢ؈

ᑈࡕǴωᡣԜᚈቫ่ᄬᝌੌǶԜբݤޑᓬᗺࢂёᡣᚈቫԄ༾ᔠෳ่ᄬᆶ༾ᐒႝϡҹࢂӧ ӕ΋ᇙำࢬำΠ܌ᇙբֹԋޑǶӢࣁ༾ᔠෳ่ᄬᆶϡҹ܌ڙډޑᕉნྕࡋϷᇙำచҹࢂ

΋ኬޑǴ܌аૈ׳ྗዴޑ௢ᆉр༾ᐒႝϡҹϣޑූ੮ᔈΚǶฅԶǴਥᏵځ೛ी౛ፕǴԜ Бݤޑ୷ᘵ༾ᝌᖉኺޑූᎩᔈΚѸ໪٣ӃςޕǴωё؃ளࡑෳᖓጢޑූᎩᔈΚǶ

კ 1.21 W. Fang ฻Γ[32]܌ගрޑᚈቫ่ᄬݤǺ (a)୷ᘵ༾ᔠෳኺޑଆۈᕴ׎ᡂǴ(b)ѐ ନᜐࣚ௽ᙯࡕёள΋୷ᘵ༾ᔠෳኺޑપ៻Ԕ׎ᡂǴ(c)ѐନᜐࣚ௽ᙯࡕǴёளᚈቫ่

ᄬޑપ៻Ԕ׎ᡂǶ

(a) (b)

კ 1.22 Min ฻Γ[33]܌ගрޑᚈቫ่ᄬݤ(a) ่ᄬញܫࡕǴ୷ᘵ༾ᔠෳኺϐଆۈᕴ׎ᡂ (b) ่ᄬញܫࡕǴᚈቫ༾ᔠෳኺϐᕴ׎ᡂǶ

1.5 ߎ ߎឦ-ߎឦௗ᝻ᇙำ

ҁፕЎ܌ගрޑ༾ᐒႝᡄᒠ႔ࢂឦܭႝߔԄ༾໒ᜢϐۯ՜ᔈҔǴӢԜϡҹӧϪඤ໒ ᜢਔǴ཮Ԗߎឦჹߎឦޑௗ᝻ୢᚒǶҗЎ᝘ӣ៝ளޕǺ០୏БԄǵ០୏Κၰǵߎឦ߄य़ ޑރݩǵڙډԡࢉᆶցǵ׷਑੝܄ΏԿ࠾းБԄ฻ӢનǴ೿཮ቹៜߎឦௗ᝻य़ޑ܄ૈ߄

౜Ƕ

ჹܭ໒ᜢϪඤϐௗ᝻ୢᚒǴӧ 2005 ԃ S.T. Patton ฻Γ[34]ࣴزว౜ճҔߎբࣁௗ᝻

ߎឦਔǴҗܭᇙำ΢ޑԡࢉ܈ࢂᚼ៛ӧε਻ύǴځߎឦ߄य़཮Ԗ΋ቫ๊ጔޑᅹϯӝނቫ (hydrocarbons)܈਼ϯᖓጢቫǶӵკ 1.23(a)܌ҢǴԜ๊ጔቫ(ϟႝቫ)ᗨฅ཮෧Ͽჴሞߎឦ

ௗ᝻य़ᑈϷቚуௗ᝻ႝߔॶǴՠࢂჹᗉխௗ᝻ߎឦ໔ޑℚ๱(adhesion)౜ຝǴࠅԖჴ፦΢

ޑᔅշ[35]ǶӕਔǴࣴزύҭว౜ӧեႝࢬ(ɦ10 μA)ޑ௃ݩΠǴᡣߎឦჹߎឦௗ᝻΋ࢤ ਔ໔ࡕǴځௗ᝻य़ᡂӀྖԶౢғཱུεޑΥளґᅟΚ(Van Der Waals force)Ǵ٬ளߎឦჹߎ ឦௗ᝻໔ౢғℚ๱౜ຝǶᒿࡕ H. Kam[36]฻ΓਥᏵ Patton ฻Γ[34]ޑࣴز่݀Ǵගрӧ

ௗ᝻ᆄޑߎឦ΢ӆ؈ᑈ΋ቫ 0.25Å ޑΒ਼ϯ⑲(TiO2)ϟႝᖓጢቫǶ࿶ჴᡍޑ่݀ว౜Ǵ Ԝϟႝᖓጢቫё෧጗༾ႝౌ(micro-welding)ޑ౜ຝวғ[37], [38]ǴቚуϪඤ໒ᜢޑტ ڮǶ2006 ԃ O. Rezvanian ฻Γ[39]ගрௗ᝻ߎឦ߄य़ಉᕫࡋჹௗ᝻ႝߔޑቹៜǴவдॺ ޑࣴزύว౜ӧ༾λϯޑߎឦௗ᝻ϡҹǴځௗ᝻य़٠ߚ΋૓܌ᇡࣁޑय़ௗ᝻ǴԶࢂ׳ௗ

߈ᗺ(spots)ௗ᝻Ǵӵკ 1.23(b)܌ҢǶӧᏹբߎឦჹߎឦௗ᝻΋ࢤਔ໔ࡕǴҗܭᗺௗ᝻य़ ᑈቚуԶ཮٬ளௗ᝻ႝߔΠफ़ǴЪቚуΑߎឦ໔ޑℚ๱Κ(adhesion force)Ƕ

კ 1.23 (a)ڀ਼ϯᖓጢϐௗ᝻ႝߔᐒڋ[34] (b)ௗ᝻߄य़࿶΋ࢤਔ໔ޑᏹբࡕǴ߄य़ௗ᝻

य़ᑈቚу[35]

ќѦǴӵკ 1.24 ܌ҢǴଞჹ༾໒ᜢௗ᝻ႝߔޑё᎞ࡋٰ຾Չෳ၂[40], [41]Ǵҗკё ޕǴӧௗ᝻Ȑcontactȑ10⁴ ԛϐ߻ǴӢࣁ߄य़ಉᕫࡋᒿ๱ௗ᝻ԛኧޑቚуԶᡂλǴӢԜ

ௗ᝻ႝߔ೴ᅌᡂλǴՠऊವӧௗ᝻ 10⁶ԛϐࡕǴҗܭௗ᝻य़όᘐናᔐԶ೷ԋ׷਑ֽ೽ฯ ϯǴ٬ௗ᝻ႝߔԖᅌᅌ΢ϲޑ౜ຝǶӧ 2007 ԃ Q. Ma ฻Γ[42]٬Ҕ AuǵAuNi5ǵ Rh(Rhodium)ǵTungsten ฻׷਑բࣁ໒ᜢϐௗ᝻ᗺǴவჴᡍޑ่݀ว౜ AuNi5аϷ Rh К Au׳፾ӝ଺໒ᜢϐௗ᝻ᗺ׷਑Ƕӧௗ᝻ᆄޑ่ᄬ೛ी΢ǴL. W. Linda ฻Γ[43]ගрତӈ Ԅޑౚࠠс༧(ball grid array, BGA)่ᄬ٠௖૸ౚࠠс༧่ᄬЁκჹϡҹௗ᝻ё᎞ࡋޑ ቹៜǴਥᏵჴᡍ่݀ளޕǴ࡭ុόᘐޑᡣϡҹբ୏໒ᜢǴ཮٬ளࢌ೽ϩޑତӈԄޑౚࠠ

с༧่ᄬౢғӵკ 1.25 ܌Ңޑ༟܄ᡂ׎Զቹៜډϡҹޑ໒ᜢტڮǶՠऩౚࠠс༧่ᄬޑ Ёκऩёа଺λډɩ2μmǴ߾ځௗ᝻ტڮёຬၸ 10⁸ԛǴӵԜёௗ߈୘Ҕ༾ᐒఓ໒ᜢޑ ტڮҞ኱Ƕ

კ 1.24 ༾໒ᜢϐё᎞ࡋෳ၂[40], [41]

კ 1.25 (a) ତӈԄޑౚࠠс༧่ᄬ SEM კ (b)ϡҹᏹբ΋ࢤਔ໔ࡕǴځௗ᝻୵ޑс༧่

1.6 CMOS-MEMS ϐ ϐ࣬৒ᇙำ௖૸

΋૓༾ᐒႝϡҹޑᇙբБԄёϩࣁٿᅿǺځ΋ࣁԾՉ೛ीᇙำ؁ᡯϷᇙำୖኧǴԜ բݤޑᓬᗺࢂԾЬ܄ၨଯǴёଞჹ܌೛ीޑ MEMS ϡҹ೛ीр΋঺ന٫ޑᇙբำׇǴ ՠځલᗺࢂԜ଺ݤၨࣁ઻ਔǴ೛ीޣሡڀഢ࣬྽ޑᇙำ࿶ᡍǹќ΋ᅿᇙբБԄ߾ࣁॷշ

஑཰ϐᑈᡏႝၡжπቷ(IC foundry)܌ගٮޑ኱ྗϯᇙำБԄ٠མଛȨࡕᇙำೀ౛ำׇ

(post-CMOS process)ȩֹٰԋ MEMS ϡҹϐ೛ीᇙբǶԜբݤޑЬाԖٿ໨ᓬᗺǺ(1) ڀ ഢ IC ႝၡϷ MEMS ϡҹ᏾ӝϐᓬ༈ǴԖճܭ௢Չ΋х֖༾ᐒႝ୔༧(MEMS block)ϐӄ БՏس಍ൂ඲Тޑว৖Ǵ(2) ᇙբϡҹ܌ሡाޑ؁ᡯё೸ၸ஑཰ޑжπቷֹٰԋǴӢԜ ёᕭอϡҹᇙբਔำǶฅԶǴځલᗺ߾ࢂ༾ᐒႝࣴزΓ঩Ѹ໪౐൩౜Ԗޑᇙำୖኧᆶᇙ ำ؁ᡯǴӧፏӭज़ڋޑᕉნϐύٰ೛ी܌ाޑ༾ᐒႝϡҹǶ

1.6.1 TSMC 0.35 μm 2P4M CMOS MEMS ᇙำϟಏ

კ1.26ࣁ஑཰жπቷѠ᡼ᑈᡏႝၡᇙ೷Ϧљ(Taiwan Semiconductor Company, TSMC)

܌ගٮޑ0.35 μm CMOS 2P4M ᇙำǶӵკ܌ҢǴᇙำύԖٿቫޑӭ඲ޖ(polysilicon)ቫǵ Ѥቫ᎑ߎឦϷߎឦቫ໔଺ࣁ๊ጔቫޑϟႝቫ(dielectric layer)Ǵϟႝቫޑ׷਑ࣁ਼ϯޖ (silicon oxide)Ƕऩӆଞჹ؂ቫߎឦቫϐ׷਑ಔԋբಒ೽ፓࢗǴёว౜ځߎឦቫЬाࢂҗ ߎឦ᎑(aluminum)΢Πхᙟ๱ේϯ⑲(Titanium nitride, TiN)Ϸߎឦ⑲(Titanium)ޑ΋ঁϖ ቫ่ᄬǶࣁΑᡣόӕߎឦቫ໔ૈڀԖႝ܄໺ᒡޑфૈǴ߾ሡाӧ਼ϯޖቫ΢аᇑڅޑБ ԄᢕϾ׎ԋViaǴӆஒᏤႝ׷਑(ߎឦᙺ(Tungsten))༤ΕViaϣǴа׎ԋᏤႝޑ೯ၰ(ջϣ೽

ௗӝጕၡ)ǶԜѦǴᙺޑ΢Πҭхᙟ๱ේϯ⑲Ƕ࣬ᜢᇙำޑ׷਑ǴቫભжဦϷ࣬ჹՏ࿼Ǵ ፎୖԵკ1.26Ƕ

კ 1.26 TSMC 2P4M 0.35 μm ޑ኱ྗ CMOS ᇙำ

კ1.27 ࣁCIC܌ගٮޑ኱ྗȨࡕᇙำȩ[44]ǶԜ኱ྗࡕᇙำЬाх֖ٿᅿଳᇑڅמ

ೌǴϩձࣁߚ฻ӛ܄(anisotropic)ޑȨϸᔈᚆηଳᇑڅᇙำ(RIE dry etch process)ȩϷ฻ӛ

܄(isotropic)ޑଳᇑڅޖ୷݈מೌǶӧߚ฻ӛ܄(anisotropic)ޑϸᔈᚆηଳᇑڅמೌύǴࢂ

ճҔCF4/O2ႝዀࠟޔᇑڅߥៈቫǵϟႝቫǵӭ඲ޖǵ൑਼ϯቫϷޖ୷݈ǴԶߎឦቫ߾ё

྽բԜᇑڅמೌޑฯ፿࿽(hard mask)ǹջࢂᇑڅޑߔᏲቫǴӢԜёаճҔߎឦቫٰ௓ڋ ᇑڅుࡋ܈ߥៈMEMSϡҹǶ฻ӛ܄(isotropic)ଳᇑڅޖ୷݈מೌǴ߾ࢂճҔࢧϯނ (SF6)

ႝዀǴ฻ӛ܄ᇑڅޖ୷݈ǴᙖҗۭϪȐundercutȑ౜ຝ٬ள༾่ᄬளаញܫǵᝌੌǶ ӧ኱ྗࡕᇙำޑ඲Тթֽ೛ीࢬำǴӵკ1.27(a)܌ҢǴճҔPADӀ࿽ۓကటѐନӧ

඲Тύന΢ቫޑߥៈቫ(Passivation layer)ǴаճࡕុޑᇑڅᇙำǶӆճҔRLSӀ࿽ۓက рႣբߚ฻ӛ܄ଳᇑڅ܈่ᄬᝌੌޑ୔ୱǴӵკ1.27(b)܌Ңǹ၀୔ୱஒ཮೏ࠟޔᇑڅԿ ޖ୷݈៛р܈ࢂ೏ߎឦቫߔᏲՐࣁЗǶֹԋߚ฻ӛ܄ଳᇑڅޑᇙำϐࡕǴᆙௗ๱ջࢂ฻

ӛ܄(isotropic)ଳᇑڅޖ୷݈ޑᇙำ(კ1.27(c))ǴԜਔႝዀᇑڅஒ཮ଞჹค਼ϯޖቫߥៈ

ޑޖ୷݈߄य़଺฻ӛ܄(isotropic)ޑଳᇑڅǴ௩ޜޖ୷݈׷਑೷ԋ༾่ᄬᝌੌǴֹԋ᏾ঁ

኱ྗࡕᇙำჴբǶҗܭߎឦቫǵ਼ϯޖቫၟޖ୷׷ޑᇑڅᒧ᏷КࡐଯǴ܌аߎឦϷ਼ϯ ޖቫޑ߄य़่ᄬ٠ό཮ڙډϼᝄख़ޑװᔐǶკ1.27(c)ࣁനࡕֹԋޑᝌੌ่ᄬୁӛওय़

(a) (b)

(c)

კ 1.27 CIC ܌ගٮޑ኱ྗࡕᇙำ(Standard-Post Process)

1.7 ࣴ ࣴزБݤᆶҞ኱

ӚձගрԖਏޑБݤٰှ،ᝌੌ่ᄬޑ៻Ԕ౜ຝǺ (1) ӧԾՉࣴวޑᇙำ೛ीύǴᝌੌ

่ᄬࣁᚈቫ׷਑Ǻϟႝ׷਑Ϸߎឦ׷਑ǶҁࣴزନΑፓ᏾Ԝᚈቫ׷਑ޑᖓጢޑ؈ᑈୖኧ

ٰफ़եځϣᔈΚѦǴӧԜ่ᄬ΢ӆ؈ᑈ΋ቫߎឦᖓጢǴ٬ϐԋࣁ΋Οቫ׷਑ޑᝌੌ่

ᄬǴ٠ճҔҁፕЎ܌໒วޑ in situ ᖓጢᔈΚਠ҅ݤٰ،ۓԜߎឦᖓጢϐȸࠆࡋȹǶӵԜ

΋ٰךॺ൩ёᙖҗΟቫ׷਑ϐፄӝ่ᄬٰ٬ளѳ݈όठܭ៻Ԕᡂ׎ǶԜѦǴԜᖓጢਠ҅

ݤࢂ᏾ӝ W. Fang [28]Ϸ Y.-H. Min [33]฻բޣϐࣴزБݤޑᓬᗺǶ(2) ӧ஑཰ᇙำжπ ቷ܌ගٮޑ CMOS-MEMS ᇙำύǴҁፕЎࣴزҗόӕߎឦϷ਼ϯቫ܌௢᠄Զԋޑѳ݈

่ᄬǴ٠ᙖҗԾՉࣴวޑྒྷᇑڅמೌѐନ឴࣊ቫ٬ځᝌੌǴӆ࿶җჴᡍޑٰ่݀ፓࢗՖ ᅿᖓጢ୴᠄ಔӝޑ่ᄬځ៻ԔໆࣁനλǶനࡕǴӆམଛӣᇑڅᇙำמೌٰ༾ፓѳ݈ޑࠆ ࡋǴаᕇளѳࠢന٫ϯޑѳ่݈ᄬǶ

ᕴ่а΢ޑ૸ፕǴҁࣴزаΠӈ൳ᗺ଺ࣁЬाޑࣴزҞ኱Ǻ

1. ೛ीрബཥࠠ༾ᐒႝᡄᒠ٠໒ว፾ӝԜϡҹޑᇙำǴЪᇙำѸ໪ڀഢᆶ CMOS ᇙำ᏾ӝϐૈΚǶ

2. ଞჹόӕޑϡҹᇙำ೛ीǴӚձගрԖਏޑБݤٰှ،ᝌੌ่ᄬޑ៻Ԕ౜ຝǴ х֖ᖓጢ୴᠄ᆶӣᇑמೌϷ in situ ᖓጢᔈΚਠ҅ݤǶ

3. ຾Չ࣬ᜢჴᡍٰໆෳ೚ӭϡҹϐख़ाޑ੝܄Ǵх֖ΑϡҹޑϪඤૈໆ઻ཞໆ

ෳǵϡҹ໒ᜢӧᏤ೯ϷόᏤ೯ރᄊਔޑႝߔॶǵϡҹޑ໒ᜢტڮᆶϡҹޑӅਁ

ᓎ౗Ƕ

1.8 ҁ ҁЎࢎᄬ

ҁЎхࡴΑϤε೽ϩǶҁകࣁᆣፕǴхࡴΑࣴز୏ᐒǵЎ᝘ӣ៝ϷࣴزҞ኱ǶಃΒ ക߾ගрೣऀӄЎޑ༾ᐒఓᡄᒠ႔ϐᏹբচ౛ᆶ೛ी౛ፕǶಃΟക௖૸ූᎩᔈΚޑໆෳ

Ϸਠ҅БԄǴ٠ஒ่݀ᔈҔܭ༾ᐒႝᡄᒠ႔ޑ೛ी/ᇙբǶಃѤക೸ၸኳᔕࢬำǴхࡴϡ ҹޑኧॶኳᔕϩ݋ǵኳᄊኳᔕǵᡄᒠфૈϷރᄊᙯඤኳᔕǴаБߡϐࡕ೛ीϡҹթֽ

(layout)ЁκϷᇙำჴբǶಃϖകࣁ༾ᐒఓᡄᒠ႔ޑᇙ೷ǴҁЎගрΑٿᅿόӕޑᇙำמ

ೌٰᇙբϡҹǴ٠௖૸؂΋ᅿᇙำמೌ܌ᎁၶډޑᇙำୢᚒϷှ،БݤǴճҔ೭٤ჴբ ޑ࿶ᡍаբࣁࡕុϡҹׯؼϐ୷ᘵǶಃϤകև౜ٿᅿᇙำ܌ᇙբޑ༾ᐒႝᡄᒠ႔চࠠ

(prototype) Ϸϡҹޑෳ၂่݀ǶಃΎകբࣁҁࣴزޑ่ፕǴ٠ӧ่ፕύǴගрϡҹ೛ी

ޑׯ຾Бݤک҂ٰޑࣴزБӛǶ

Β

Βǵ༾ᐒႝᡄᒠ႔ϐ೛ी

2.1 ༾ᐒႝᡄᒠ႔πբচ౛

ҁ࿯ύӃճҔၨޔ᝺ޑΟቫԄޑϡҹ่ᄬٰᇥܴᡄᒠ႔ޑπբচ౛ǴᒿջӆஒԜ౛

ፕᔈҔډᚈቫԄޑϡҹ೛ी٠ࡌҥځϡҹޑኧᏢኳࠠǴаճࡕុޑϡҹୖኧ೛ीǴӵϡ ҹ׎ރǵЁκϷ០୏ႝᓸ฻Ƕ

2.1.1 ΟቫԄޑ༾ᐒႝᡄᒠ႔

༾ᐒఓᡄᒠ႔ϡҹޑ೛ीཷۺёճҔӵკ 2.1 ޑ΋ঁΟቫԄǵᓉႝठ୏่ᄬٰ଺ᇥ

ܴǶӵკ܌ҢǴϡҹޑ΢ΠٿቫࣁڰۓႝཱུǴύ໔ቫ߾ࢂ΋ё୏ޑᝌੌ่ᄬǴ໻ૈբ΢

/ΠՏ౽Ƕ྽΢Πቫޑႝཱུϩձ೏ࡼуڰۓޑ Vcc+Ϸ Vcc-ޑޔࢬୃᓸǴаϷӧᝌੌ่ᄬቫ ޑѰѓٿᆄႝཱུᒡΕ VaϷ VbޑႝᓸૻဦǴҗܭ΋ǵΒᆶΒǵΟቫύ໔Ԗόӕޑႝᓸৡ Ϸ΢Πႝཱུ໔ሜȐgap, d₁, d₂ȑǴӢԜ΢Πቫႝཱུ཮ჹύ໔ᝌੌ่ᄬౢғελόӕǴБӛ

࣬ϸޑ৤উᓉႝΚǴᓉႝΚޑӝΚελஒ،ۓύ໔ᝌੌ่ᄬ۳΢܈ΠՏ౽Ǵ٬ளᝌੌ่

ᄬ΢ޑᒡрႝཱུ(output terminal)࿘᝻ډ΢/ΠႝཱུǴ຾ԶᒡрჹᔈޑႝᓸૻဦǶӢԜǴӵ Ֆᡣᝌੌ่ᄬቫ٩ྣࡰҢޑठ୏Бӛٰ໺ሀႝᓸૻဦǴ٬ளᒡΕᆶᒡрޑႝᓸૻဦ໔ڀ Ԗ୷ҁᡄᒠၮᆉޑᜢ߯ǴࣁԜ༾ᡄᒠ႔ޑύЈ೛ीཷۺǶ

კ 2.1 ΟቫԄᓉႝठ୏่ᄬޑ༾ᐒఓᡄᒠ႔ϡҹ೛ीཷۺკ

аΠஒ၁ಒᇥܴԜϡҹޑठ୏চ౛ϷᏹբБԄǶӵკ 2.1 ܌ҢǴ྽ᝌੌ่ᄬቫӕਔ

V_a=V_cc-ǴVb=V_cc+ǴԜਔϡҹޑբ୏ϸᔈஒᆶ௃ݩ(1)࣬ӕǶஒԜѤᅿᒡΕႝᓸૻဦᆶᒡ рႝᓸૻဦޑᜢ߯᏾౛ܭ߄ 2.1Ƕଷ೛ Vcc+Ϸ Vcc-ޑႝᓸૻဦϩձж߄ኧՏૻဦύޑ 1 Ϸ 0ਔǴԜϡҹ܌ϸᔈрٰޑᒡΕϷᒡрޑႝᓸૻဦᜢ߯(ୖ߄ 1.2 ޑ੿ॶ߄)൩ӵӕ΋૓໺

಍ᡄᒠ႔(җႝ඲ᡏ܌ಔԋ)ޑ NOR ႔Ƕ

ԜѦǴऩஒ΢Πႝཱུޑޔࢬୃᓸ࣬ϸǴջ΢ႝཱུႝᓸࣁ Vcc-ǴΠႝཱུႝᓸࣁ Vcc+Ǵ ख़ፄ΢ॊޑᏹբচ౛Ǵ٠ᇙբځ࣬ჹᔈޑ੿ॶ߄Ǵךॺёаว౜ϡҹޑᒡΕ/ᒡрᜢ߯฻

ӕܭ΋ঁ໺಍ޑ NAND ႔ǶӢԜǴҁ೛ीޑᓬᗺϐ΃ջӧܭǴόሡा׳ׯᐒఓ่ᄬ೛

ी܈ځдฯᡏ೛ीǴ໻׳ׯޔࢬୃᓸǴߡёஒԜϡҹޑᡄᒠфૈӧ NOR ႔Ϸ NAND ႔ ϐ໔຾ՉϪඤǶ

җܭ΢ॊΟቫԄᓉႝठ୏ᡄᒠ႔ޑ่ᄬ೛ीǴόܰճҔ༾ᐒႝޑуπמೌٰᇙբǶ ӢԜ T.-L.Chen [45]ஒკ 2.1 ޑϡҹ೛ीᙌᙯ 90 ࡋࡕǴճҔ༾ᐒႝύޑᡏࠠуπמೌ(bulk micromachining)ٰᇙբǶځ่ᄬ೛ीӵკ 2.2 ܌ҢǴᏹբႝᓸࣁ 20̒/0VǶ

߄ 2.1 ༾ᐒႝ NOR ႔ځᒡΕϷᒡрޑႝᓸᜢ߯

Case Va Vb Output

(1) V_cc+(1) V_cc-(0) V_cc-(0) (2) Vcc+(1) Vcc+(1) Vcc-(0) (3) Vcc-(0) Vcc-(0) Vcc+(1) (4) V_cc-(0) V_cc+(1) V_cc-(0)

კ 2.2 ᡏࠠ༾уπמೌ܌ᇙբрޑ༾ᐒႝᡄᒠ႔[45]

2.1.2 ᚈቫԄޑ༾ᐒႝᡄᒠ႔

ࣁΑᙁϯ༾ᐒႝᡄᒠ႔ޑᇙբำׇǴफ़եᏹբႝᓸǴ٬܌೛ीޑ༾ᐒఓᡄᒠ႔׳৒

ܰૈᆶځд IC ϡҹ(BJTǵFET)᏾ӝӧ΋ଆǴҁࣴزගрΑ΋ᅿᚈቫԄޑ༾ᐒႝᡄᒠ႔

่ᄬǴ٠٬ள၀่ᄬёаճҔ߄य़༾уπ(surface micromachining)מೌٰᇙբǶ

ӵკ 2.3(a)܌ҢǴ΢ቫ่ᄬ(໳Յ୔༧)ࣁ΋ᙋᙋ݈Ԅޑѳ݈ǴԜ่ᄬЬाࢂҗᏤႝ܄

ޑ׷਑܌ಔԋǴӵᄞᚇޑӭ඲ޖǵߎឦߎ(au)܈ፄӝԄޑ׷਑ǴԶ၀ѳ݈җύ໔ԪՅ୔

༧ޑ๊ጔቫ(isolation layer)܌ߔ႖ǴӵԜջёӧѳ݈Ѱᜐࡼаޔࢬୃᓸ Vcc+Ǵѓᜐࡼаޔ ࢬୃᓸ Vcc-Ƕѳ݈җѰѓٿୁޑᝌᖉኺЍኖ๱ǴԜᝌᖉኺ่ᄬࣁ௽ᙯቸᘽ(torsinoal srping) ගٮѳ݈ቸ܄ࡠൺΚ(resilient force)ǹӵკ 2.3(b)܌ҢǴΠቫ่ᄬ(आՅ୔༧)߾ࢂڰۓޑ

ۭႝཱུǴх֖ΑΟ೽ϩǺ(1) ࡼуޔࢬୃᓸ(Vcc+, Vcc-)ޑ pad ႝཱུ(pad A and pad B)ǵ(2) ᒡ Εႝཱུ A Ϸ B (input terminal A and B)Ϸ(3) ᒡрႝཱུ(output terminals)ǶԜϡҹ่ᄬᆶ΋

૓ᓉႝΚ០୏ޑ௽ᙯ༾่ᄬ࣬՟ǴճҔסᙯኳᄊ(torsion mode)ٰ຾Չठ୏Ǵനεόӕϐ

ҁϡҹޑᏹբচ౛ӵΠǺ྽ϩձᒡΕ Vcc-Ϸ Vcc+ޑႝᓸૻဦܭ pad A Ϸ pad B ႝཱུ

ࡕǴႝᓸૻဦջё೸ၸЍኖ่ᄬ(anchor)ӆ೸ၸᝌᖉኺǴ٬ѳ݈ٿୁϩձ஥ Vcc-Ϸ Vcc+ޑ

ႝᓸૻဦǹӕਔΞӧᒡΕႝཱུ(input terminals A and B)ࡼу Vcc-܈ Vcc+ޑႝᓸૻဦࡕǴӢ ࣁۭႝཱུޑ០୏य़ᑈ(Al and Ar,ୖკ 2.3)೏څཀ೛ीԋѰѓٿᜐЁκόჹᆀǴ܌аջ٬ѳ

݈Ѱѓٿୁᆶځ࣬ჹᔈޑۭႝཱུԖ࣬ӕޑႝᓸৡǴӧѳ݈ޑѰѓٿୁϝ཮Ӣࣁ០୏ႝཱུ

य़ᑈόӕǴԶౢғόӕελޑᓉႝΚǴ٬ளѳ݈ёරѰ܈ѓ໼௹଺ᜋᜋ݈ၮ୏(see-saw motion)Ǵ٠ᡣѳ݈΢ޑႝཱུௗ᝻ډᒡрႝཱུǴ຾Զ໺ሀрᝌੌѳ݈΢Ѱୁ܈ѓୁޑႝᓸ

ૻဦǶ

კ 2.4 ϩձࣁ NOR ႔ᆶ NAND ႔ޑࡼуୃႝᓸޑଛ࿼ǶਥᏵ߄ 2.1Ǵ٩ׇᒡΕѤᅿ ኧՏૻဦಔӝܭᒡΕႝཱུ A ϷᒡΕႝཱུ B (input A and input B)Ǵ٬ளѳ݈ڙډᓉႝΚં

ޑբҔౢғסᙯၮ୏Զௗ᝻ډᒡрႝཱུǴӵԜѳ݈΢ޑႝᓸջёᙖҗ output ᆄᒡрǶ ԜѦǴճҔԜϡҹམଛӵკ 1.9 ޑଛጕБԄǴջёၲډځѬᡄᒠ႔ϐᡄᒠфૈǴӵ ANDǵOR Ϸ NOT ႔ǶӢԜ࣬ၨܭӃ߻Ў᝘ޑᡄᒠ႔೛ी[6], [14]ǴҁЎ܌೛ीޑᡄᒠ ႔ନΑૈ෧Ͽթֽय़ᑈޑੁ຤ѦǴϡҹஒ׳ڀወΚٰჴ౜΋ঁፄᚇޑᡄᒠႝၡǶ

ԜᚈቫԄᡄᒠ႔೛ीКၨ 2.1.1 λ࿯ύ܌ගрޑΟቫԄᡄᒠ႔೛ीǴٿޣޑ࣬ӕೀ

ӧܭᐒఓ่ᄬ΢ࣣሡ΋ঁёаམၩٿঁႝՏޑᝌੌ่ᄬǹӧ࣬౦ϐೀ߾ࢂΟቫԄᡄᒠ႔ ϡҹࢂ௦ڗፓ௓΢/Πቫ໔ϐ໔ሜελٰၲډᡄᒠၮᆉфૈǴԶᚈቫԄޑᡄᒠ႔೛ी߾ࢂ

೸ၸ೛ीόӕЁκޑ០୏य़ᑈǴٰၲډᡄᒠ႔фૈǶ

კ 2.3 ༾ᐒႝᡄᒠ႔ϡҹ (a) NOR ᡄᒠ႔ႝᓸଛ࿼ (b) 3D চࠠ(Prototype)Ǵ๊֖ጔቫҢ ཀკ

კ 2.4 NOR ႔Ϸ NAND ႔ޑୃᓸଛ࿼Ңཀკ

2.2 ᚈ ᚈቫԄ༾ᐒႝᡄᒠ႔ϐ೛ीᆶኳᔕ

ਥᏵ 2.1 ࿯ύ܌ගрޑ༾ᐒႝᡄᒠ႔ϐᏹբচ౛ёว౜Ǵ೛ी/ᇙբᚈቫԄ༾ᐒႝᡄ ᒠ႔ϡҹޑᜢᗖמೌӧܭѸ໪ाዴۓᝌੌޑѳ่݈ᄬૈ୼ਥᏵ܌ᒡΕޑႝᓸಔӝǴࡪྣ

೛ۓޑБӛӛѰ܈ӛѓ௽ᙯǴ٠ᝤҗႝཱུ໔ޑௗ᝻Ǵ໺ሀрჹᔈޑᒡрૻဦǶࣁΑाၲ

ډ΢ॊޑҞ኱Ǵ༾ᐒႝᡄᒠ႔ޑ֎ߕႝᓸ(pull-in voltage)ǵ่ᄬϷЁκ೛ीǵ୏ᄊៜᔈǵ ރᄊᙯඤ(state transition)฻ջᡉள࣬྽ख़ाǶӢԜǴҁλ࿯ஒ၁ॊ༾ᡄᒠ႔ޑ୏ᄊϩ݋

Ϸख़ाЁκ/่ᄬ೛ीǶ!

2.2.1 ༾ᐒႝᡄᒠ႔ޑ୏ᄊϩ݋

ҁፕЎ܌ගрޑᚈቫԄϡҹᄬ೷Ǵځᝌੌ่ᄬࢂҗ΋ঁѳ่݈ᄬ೏ٿୁಒߏޑᝌᖉ ኺ܌Ѝኖ๱Ǵӵკ 2.5 ܌ҢǶѳ݈ڙډᓉႝΚ֎ЇౢғᓉႝΚંԶ຾Չסᙯ(torsion)ၮ

୏ǴЍኖޑᝌᖉኺ߾תᄽ๱ቸᘽޑفՅǴගٮࡠൺΚᡣѳ݈ӣډНѳՏ࿼ǴӢԜ᏾ঁس

಍ޑ୏ᄊёа೏ኳᔕࣁ΋Β໘ޑ୏ᄊس಍ǴڙډᓉႝΚંϷᝌᖉኺගٮޑࡠൺΚંǴځ

୏ᄊБำԄё߄ҢࣁǺ

+ + = −

 

θ t R L

I θ Cθ K θ M M (2.2)

ӧԜǴIθࢂѳ݈ޑ፦ໆᄍ܄סં(mass moment of inertia)ǹC ࢂس಍ύޑߔѭ߯ኧ (damping coefficient)ǹKtࢂᕴቸᘽޑ௽ᙯখ܄(torsinal stiffness)ǹMRϷ MLϩձж߄ӧѳ

݈Ѱѓٿᆄ܌ౢғޑᓉႝΚં(electrostatic torques)Ƕ

კ 2.5 ᚈቫԄ༾ᐒఓϡҹϐסᙯ่ᄬ೛ीǺ(a) 3-D Ңཀკ (b) ୁय़კ

ਥᏵკ 2.5 ޑϡҹ่ᄬ೛ीǴѳ݈ࢂҗٿঁѰѓೱௗޑᝌᖉኺ่ᄬ܌ЍኖǴ٠ᙖҗ ࠆࡋ(thickness)ǵ୊Κኳኧ(shear modulus)Ϸཱུᄍ܄ં(polar moment of inertia)ǶԶdi ޑຯ ᚆ߾ࣁȸӭቫȹᖓጢ่ᄬޑᄒय़ᑈϐύ܄ືՏ࿼(neutral axis)ډȸൂቫȹᖓጢ่ᄬޑ ᄒय़ᑈϐ׎ЈՏ࿼(centroidal axis)Ƕ

ӧѳ݈ޑ፦ໆᄍ܄סં(Iθ)೽ϩǴҭёճҔډӭቫᖓጢ౛ፕ؃ளϦԄ(2.5)Ƕ

ӧคѦΚޑ௃ݩΠǴ༾ᐒႝᡄᒠ႔ޑಃ΋ኳᄊ(first mode shape)ޑᙯ୏ᓎ౗ࣁǺ

1

ԜѦǴҗܭԜ௽ᙯ่ᄬ௦ҔᓉႝΚ០୏ǴӢԜϡҹ០୏ޑ֎ߕႝᓸȐpull-in voltageȑ

ӧԜǴMtࣁᝌᖉኺޑቸ܄ࡠൺסં(resilient torque)ǹθsࣁ֎ߕفࡋ(snap down angle)Ƕ

2.2.2 ᡄᒠ႔ޑރᄊᙯඤ(state transition)ϩ݋

ރᄊᙯඤ(state transition)ࢂҔаᡍ᛾໺಍ IC ᡄᒠ႔܄ૈޑख़ाࡰ኱ϐ΃[48]Ƕᡍ᛾

ޑҞޑӧܭዴᇡ྽ᒡΕόӕಔӝޑႝᓸૻဦܭኧՏϡҹ΢ਔǴϡҹૈ໩ճޑவ΢΋ঁރ

კ 2.6 ᚈቫԄ༾ᐒႝ NOR ႔Ǵځᓉႝסંᆶቸ܄ࡠൺסંϐᜢ߯კǶӵკ܌ҢǴᓉႝ

סંελࣁ҅ॶਔǴ֎ߕѳ݈ޑᓉႝסં཮٬ѳ݈଺໩ਔଞБӛ௽ᙯǹ࣬ϸޑǴᓉ

ႝסંελࣁॄॶਔǴѳ݈߾ࢂ଺଍ਔଞБӛޑ௽ᙯၮ୏Ƕ

კ 2.6 ࣁ༾ᐒႝȸNORȹ႔ϐᓉႝᆶቸ܄ࡠൺסંϐᜢ߯კǴკύᕵືࣁΚંǴᐉ

ືࣁᝌੌѳ݈ޑ௽ᙯفࡋǶӵკ܌ҢǴ྽ࡼу΋ಔࣣࣁ Vcc+ϐႝᓸܭᒡΕႝཱུ(input terminals A and B)΢Ǵջࣁკύ܌Ңཀޑ case III ޑԔጕǴԜਔӧҺՖѳ݈௽ᙯفࡋΠǴ ѳ݈܌ڙډޑᓉႝסંࣁࡡȸ҅ȹǴԶ྽ࡼу΋ಔࣣࣁ Vcc-ϐႝᓸܭᒡΕႝཱུ΢Ǵջࣁ კύ case I ޑԔጕǴԜਔѳ݈܌ڙډޑᓉႝסંࣁࡡȸॄȹǶଷ೛ᝌᖉኺޑቸ܄ࡠൺס

ંӧѳ݈λفࡋޑᙯ୏Πࢂ಄ӝ߁լۓࡓ(Hooke's law)Ǵ߾ቸ܄ࡠൺסંஒ཮ࢂ΋చ೯ ၸচᗺ০኱ޑޔጕǴځ௹౗ελջࢂᝌੌѳ݈ޑ௽ᙯখ܄Ǵջკύ case IV ޑԔጕǶӢ ԜǴऩૈ೛ी፾྽ελޑסંখ܄Ǵӵკ 2.6 ܌ҢǴ٬ளځቸ܄ࡠൺסંૈ୼ϟܭᒡΕ

ૻဦࣁ(1,1)Ϸ(0,0)ޑᓉႝסંϐ໔ǴЪคҺՖޑҬᗺǴ྽ᒡΕૻဦࣁ(1,1)ਔǴӢࣁԜਔ ޑᓉႝסંࡡεܭቸ܄ࡠൺסંǴӢԜѳ݈ૈவҺཀޑ໼௹فࡋ(tilting angle)Π໩ਔଞ

௽ᙯǴޔډ࿘᝻ډѓᜐᒡрႝཱུǴ຾ԶᒡрჹᔈޑૻဦǶӕኬޑၰ౛Ǵ྽ᒡΕૻဦࣁ(0,0) ਔǴѳ݈ҭૈவҺཀޑ໼௹فࡋΠ଍ਔଞ௽ᙯǴޔډ࿘᝻ډѰᜐޑᒡрႝཱུǴ຾Զᒡр ჹᔈޑૻဦǶ

ࣁΑाၲډ΋ঁȸNORȹ႔ޑᡄᒠфૈǴ྽ᒡΕૻဦޑಔӝࣁ(Vcc+, V_cc--)܈(Vcc-,

2.2.3 ᡄᒠ႔ޑс༧(dimple)่ᄬ೛ी

ᝌੌѳ݈ޑനε௽ᙯفࡋǴࢂڗ،ܭȸѳ݈ޑߏࡋȹϷѳ݈ቫᆶۭႝཱུቫϐ໔ޑ

ԜѦǴ΋૓ӧᇙբᝌੌё୏่ᄬਔǴࢂճҔ่ᄬቫᆶ឴࣊ቫ׷਑ϐ໔ޑଯᇑڅᒧ᏷

КǴஒ឴࣊ቫѐନԶ੮Π่ᄬቫǴᇑڅֹ౥ࡕǴѸ໪ӆ࿶ᐕమࢱᆶଳᔿٿঁ؁ᡯǴ༾่

ᄬωё੿҅ᝌੌܭ୷ۭϐ΢ǴԜၸำ߾ᆀϐࣁ่ᄬញܫ(release)Ƕҗܭమࢱޑ୏բǴၸ ำύߚத৒ܰวғ่ᄬᆶ୷ۭϐ໔ޑݠᗹ(stiction)౜ຝǴᏤठϡҹӧញܫࡕคݤᝌੌǶ ӢԜǴࣴز΢தճҔс༧่ᄬٰ෧Ͽ่ᄬᆶ୷ۭޑௗ᝻य़ᑈǴ຾Զׯ๓ݠᗹރݩ(stiction problem)ޑวғ[38], [49]Ƕ

܌ас༧่ᄬޑ೛ीନΑёаӧόׯᡂᓉႝסંޑελΠǴٰ೛ۓᝌੌѳ݈ޑനε

௽ᙯفࡋǴҭёշܭफ़ե่ᄬቫᆶ୷ۭϐௗ᝻य़ᑈǴׯ๓ݠᗹރݩǶ

2.3 λ λ่

ӧҁλ࿯ύ ϟಏΑ܌೛ीޑ༾ᐒႝᡄᒠ႔ᏹբচ౛Ǵ٠ࡌҥΑ࣬ᜢޑኧᏢኳࠠа ٮࡕុϡҹ೛ी/ኳᔕϐҔǶਥᏵϡҹޑᏹբচ౛ёว౜ǴԜ೛ीനεޑࡷᏯӧܭѸ໪ዴ ۓϡҹϣᝌੌޑѳ݈ૈ୼௽ᙯ(סᙯ)ԿႣය܌೛ۓޑБӛϷᆶᒡрႝཱུௗ᝻(contact)Ǵ຾

Զ໺ሀрჹᔈޑႝૻဦǶࣁΑाၲډԜҞ኱ǴךॺѸ໪ଞჹǺх֖ϡҹ΢ޑ០୏ႝཱུޑ

׎ރϷЁκǴЍኖቸᘽޑ௽ᙯখ܄Ǵ΢Πႝཱུቫ໔ϐ໔ሜϷ០୏ႝᓸǵ฻ୖኧ຾Չ೛ीǶ ฅԶǴӧԜѸ໪மፓ΋ᗺǴᝌੌѳ݈ޑനε௽ᙯفࡋࢂϡҹڀഢᡄᒠфૈޑᜢᗖୖኧǶ ՠჴሞӧჴբ΢Ǵᝌੌѳ݈ߚத৒ܰڙډූ੮ᔈΚޑቹៜԶౢғߚႣයޑ៻Ԕ౜ຝǴ٬

ளԜ΋فࡋวғᡂϯǴࣁΑा෧ϿԜ΋౜ຝǴךॺѸ໪ჹᖓጢූᎩᔈΚޑਏᔈуаਠ

҅ǴϷճҔс༧่ᄬޑଯࡋज़ڋϡҹϐᏹբ௽ᙯفࡋǶ

Ο

/᎑ፄӝቫޑූ੮ᔈΚࢂ஭ᔈΚǴӢԜคፕӵՖঅׯЁκ೛ीǴࣣคݤၲԋ΋ѳڶޑᝌੌ ਥᏵ߃؁ޑ՗ᆉǴЍኖᝌᖉኺޑ៻Ԕখ܄(bending stiffness)εऊКѳ݈ޑ៻Ԕখ܄ε 20 ७ǶӢԜǴҗЍኖᝌᖉኺ܌ଅ᝘ޑ៻Ԕ׎ᡂǴёа۹ౣόीǹᝌੌ่ᄬޑ៻Ԕᡂ׎Ьा

კ 3.1 Οܴݯ่ᄬޑᔈΚϩթკǺ(a) ୁय़่ᄬҢཀკ (b)ওय़่ᄬҢཀკ

ӢࣁΟܴݯ่ᄬࢂҗΟᅿόӕ׷਑܌ಔӝԶԋޑǴ܌аҁࣴز೸ၸȨᡂඤᄒय़ݤ (transformed section method)ȩǴ܈ᆀȨᡂ׎ᄒय़ݤȩஒ᏾ঁᄒय़่ᄬޑ׷਑܄፦֡΋ϯǴ аߡᔈΚϩ݋[46]ǶӧԜǴҁࣴزࢂଷ೛ύ໔ቫࣁ֡΋ϯၸำύޑୖԵ׷਑Ƕ΢/Πቫޑ

฻ਏቨࡋ߾ё࿶җԾي׷਑ᆶୖԵ׷਑ޑԖਏቸ܄ኳኧ(effective elastic modulusǴE )ϐ_i Кॶ؃ளǴӵϦԄ(3.1)܌ҢǶ theorem)[51]ǴΟܴݯ่ᄬޑ፦ໆᄍ܄ં(Ie)ёҗϦԄ(3.2)؃ளǺ

2 2 2

2 2

ЎਥᏵ W. Fang [28]Ϸ Y.H. Min[33]฻բޣ܌ว߄ޑٿᅿූ੮ᔈΚໆෳБԄǴගрΑ΋

ᅿ፾Ҕܭӭቫፄӝ่ᄬޑཥԄޑ in situ ᖓጢᔈΚਠ҅ݤǴ٠ҔԜБݤٰफ़եᖓጢύූ੮ ᔈΚჹᝌੌ่ᄬޑቹៜǶ

ӧԾՉࣴวޑᇙำύǴҗܭᝌੌѳ่݈ᄬࣁճҔΟᅿ׷਑ቫ܌ಔӝԶԋǴх֖

material a~cǴࣁΑᕇள؂΋่ᄬቫޑූ੮ᔈΚǴ٩Ᏽ in situ ᖓጢᔈΚਠ҅ݤǴѸሡճҔ ΟᅿᜪࠠޑᝌᖉኺԄᔠෳ่ᄬǹڀԖόӕޑ׷਑ಔӝϷᜐࣚచҹǴӵკ 3.2 ܌ᛤǶᙖҗ ໆෳځ׎ᡂໆٰᕇளූ੮ᔈΚǴ၁ಒ؁ᡯᇥܴӵΠǺ

კ 3.2 ΟᅿᜪࠠޑᝌᖉኺԄᔠෳ่ᄬǶ่ᄬ 1 җ׷਑ b(material b)Ϸ nominally clamped boundary ܌ಔԋǶ่ᄬ 2 җ׷਑ aǵ׷਑ b(material aǵmaterial b )Ϸ਀ႄࠠᜐࣚ

(clamped boundary)܌ಔԋǶ่ᄬ 3 җ׷਑ aǵ׷਑ bǵ׷਑ c(material aǵmaterial bǵ material c)Ϸ਀ႄࠠᜐࣚ܌ಔԋǶ

่ᄬ 1 (Structure 1)ࣁൂ΋׷਑ b(material b)܌ಔԋޑᝌੌ่ᄬǴځڰۓᆄޑᜐࣚచ ҹࢂ௦Ҕ W. Fan ฻բޣ[28]܌ගрޑ nominally clamped boundaryǹѝܥ״๱ᝌᖉኺᆶۭ

׷ௗ᝻ޑय़ǶӢԜǴӧ่ᄬញܫࡕ༾ᝌᖉኺӧڰۓᆄೀ཮ౢғȨᜐࣚ௽ᙯȩਏᔈǴᙖҗ ໆෳᝌᖉኺޑᕴ௽ᙯفࡋ(Φb)ϷԔ౗ъ৩(ρb)Ǵջё௢ᆉрൂ΋ᖓጢޑѳ֡ᔈΚ(mean

ࡋ(rotation angle)Ƕ

่ᄬ 2(Structure 2)ޑڰۓᆄ߾ࢂ೛ीԋ਀ႄࠠᜐࣚ(clamped boundary)Ǵᆶ Y. Min

฻բޣ[33]܌ගрޑᜐࣚచҹ೛ۓ࣬ӕǶԜ่ᄬ 2 ࣁٿቫޑፄӝ׷਑Ǵϩձҗ׷਑ a Ϸ

3.1.3 ᔈΚਠྗϐჴᡍ่݀

ࣁΑा in-situ ᔠෳ٠ਠྗᡄᒠ႔ϡҹύ؂ቫᖓጢޑූ੮ᔈΚǴΟᅿᜪࠠޑᝌᖉኺԄ ᔠෳኬҁ(ӵკ 3.2 ܌Ң)Ѹ໪Քᒿӧϡҹޑᇙ೷ၸำύǴ΋ଆᇙբֹԋǶམଛҁჴᡍޑ

༾ᐒႝᡄᒠ႔೛ीǴ׷਑ aǴbǴc(material aǴbǴc)ϩձࣁߎ/᎑(au/aluminum)ǴΒ਼ϯ ޖ(silicon oxide)Ǵکߎឦ᎑Ƕ߄ 3.1 ӈр࣬ᜢ׷਑ޑ܄፦(properties)Ϸࠆࡋ(thickness)Ƕ

߄ 3.1 ᔈΚᔠෳ่ᄬϐ׷਑ୖኧϷᖓጢЁκ

Properties Material a

(Gold/Aluminum)

Material b (Oxide)

Material c (Aluminum) Young’s modulus (GPa) 75 [52] /80[52] 75 [52] 80 [52]

Possion’s ratio 0.4[53] /0.35[52] 0.3[52] 0.35 [52]

Density(kg/m³) 19280/2700 2200 2700

Thickness (μm) 0.3 2.94 0.25

Length (μm) 125 125 125

Width (μm) 100 100 100

٬Ҕߚௗ᝻ԄޑқӀυੋሺ(non-contact white-light interferometer)ǴໆෳᝌᖉኺԄᔠ

ෳኬҁϐ߄य़៻Ԕ፺ᄂ(deflection profile)Ƕკ 3.3(a)ᡉҢ่ᄬ 1(Structure 1)ޑ៻Ԕໆ(δa) ࣁ 4.01 μm کԔ౗ъ৩(ρb)ࣁ2.24 10× ^−3mکკ 3.3(b)߄Ң่ᄬޑᜐࣚ௽ᙯفࡋ(Φb)ࣁ 5.58

җӃ߻ޑ૸ፕளޕǴҁᡄᒠ႔ޑᝌੌ่ᄬ(Β਼ϯޖϟႝቫᆶߎ/᎑ߎឦቫ)ᆶෳ၂ϡ ҹύޑ่ᄬ 2 ႜӕǴՠࢂځᝄख़ӛΠ៻ԔǴёૈ཮ӧคࡼуႝᓸΠޔௗ࿘᝻ΠႝཱུǴӢ ԜѸ໪ஒځූ੮ᔈΚբ΋ံᓭǶЪҗ΢ॊޑჴᡍ่݀ளޕǴΒ਼ϯޖࣁᓸᔈΚǴߎ/᎑ࣁ

஭ᔈΚǴӢԜคݤҗׯᡂ೭ٿᅿ׷਑ޑ؈ᑈࠆࡋٰᕇள΋ѳڶޑᚈቫᝌੌ่ᄬǶӵటᕇ ள΋ѳڶޑᝌੌ่ᄬǴёՉޑբݤϐ΃ࢂӧԜᚈቫ่ᄬ΢ќѦ؈ᑈ΋ڀԖᓸᔈΚޑ׷

਑Ǵӵҁჴᡍޑߎឦ᎑ቫ(ᓸᔈΚ 70MPa)٠ፓ௓ځ؈ᑈࠆࡋǴᙖԜፓ࿯่ᄬϣ೽ϐᔈΚ ϩթǴ෧጗៻Ԕ׎ᡂໆǶ

ӧԜǴךॺஒჴᡍ܌ளޑԜΟቫ׷਑ޑූ੮ᔈΚжΕ(3.1)~(3.3)ϦԄύǴёаளޕ ӧচҁޑΒ਼ϯޖ-ߎ/᎑ᚈቫෳ၂ᝌᖉኺ่ᄬ΢ǴѸሡᚐѦ؈ᑈ 0.3 μm ޑߎឦ᎑Ǵωૈ

ᕇள΋ѳڶค៻Ԕ౜ຝޑ่ᄬǶԜѦǴךॺஒ܌௢ᆉрޑූᎩᔈΚϷϡҹЁκୖኧǴж ΕԖज़ϡન೬ᡏ(ANSYS)բූᎩᔈΚჹᝌᖉኺ่ᄬ܌೷ԋޑ៻Ԕ׎ᡂϩ݋Ǵځኳᔕ่݀

ҭёளډ߈Яѳڶค៻Ԕޑᝌᖉኺ่ᄬ(៻Ԕໆɦ0.035 μm)Ƕ

კ 3.3 (a) Οᅿᔠෳ่ᄬޑ៻Ԕ׎ᡂໆ (b) ܫε่ᄬ 1 ೽ϩ୔༧ޑ៻Ԕ׎ᡂ

კ 3.4 ӧচҁޑΒ਼ϯޖɡߎ/᎑ᚈቫ่ᄬ΢Ǵ؈ᑈ 0.3 μm ޑߎឦ᎑Ǵҗኳᔕ่݀ว౜Ǵ ёᕇள߈Яѳڶค៻Ԕ౜ຝޑෳ၂ᝌᖉኺ่ᄬ(ᆄᗺೀ៻Ԕໆɦ0.035 μm)Ƕ

3.2 TSMC CMOS-MEMS ᔈ ᔈΚံᓭ੃ନ೛ी

ճҔ஑཰жπቷ܌ගٮޑ CMOS-MEMS ᇙำᇙբᝌੌ่ᄬਔǴځ่ᄬѸ໪җځύ ޑߎឦቫϷϟႝ፦ቫಔӝԶԋǶҗܭคݤׯᡂ؂΋ቫޑᇙำୖኧϷࠆࡋǴӢԜӧԾՉࣴ

วᇙՉำύ܌٬Ҕޑ in situ ᖓጢᔈΚਠ҅ݤஒό፾ҔǶ܌аӧԜᇙำύǴࣁΑૈளډ΋

ѳڶޑᝌੌ่ᄬǴҁፕЎࣴزճҔԜᇙำ܌ૈගٮޑԖज़׷਑ቫ(ୖ 1.6 λ࿯)Ǵଛ࿼р ёૈޑߎឦ/ϟႝቫಔӝբࣁᝌੌ่ᄬޑ׷਑่ᄬǶനࡕǴӆམଛϸᔈᚆηӄय़ଳᇑڅޑ ࡕᇙำמೌ༾ፓѳ݈ϐࠆࡋǴаᕇளന٫ϯޑѳڶѳ่݈ᄬǶ

ӧᝌੌ่ᄬޑ׷਑ᒧ᏷೽ϩǴҗܭϡҹޑۭႝཱུϷ឴࣊ቫѸ໪ϩձҔډᇙำ܌ගٮ ޑ metal-1 Ϸ metal-2 ቫǴӢԜᝌੌ่ᄬޑ׷਑ᒧ᏷ѝԖӵკ 3.5 ܌ҢޑǴΟᅿёૈޑಔ ӝǺ(1)җ metal-3 ቫϷϟႝቫ܌ಔӝԶԋޑ type 1 ϡҹǹ(2)җ metal-3 ቫǵmetal-4 ቫϷ ϟႝቫ܌ಔԶԋޑ type 2 ϡҹǹ(3)җ metal-4 ቫϷϟႝቫ܌ಔӝԶԋޑ type 3 ϡҹǶฅ ԶǴჴሞӧᇙբϡҹਔǴΞӢڙډࢌ٤ᇙำୖኧޑቹៜǴ٬ள type 2 Ϸ type 3 คݤᇙբ

კ 3.5 Type 1~3 ϡҹǴځ׷਑ಔԋҢཀკ

3.3 λ λ่

ӧҁλ࿯ύǴҁፕЎଞჹٿᅿόӕޑᇙำ೛ीǴӚձගрԖਏޑБݤٰှ،ᝌੌ่

ᄬޑ៻Ԕ౜ຝǶӧԾՉࣴวޑᇙำ೽ϩǴךॺճҔ in situ ᖓጢᔈΚਠ҅ݤٰ،ۓ่ᄬ΢

ߕуߎឦቫޑᖓጢࠆࡋǴӵԜջёᙖҗΟቫԄޑፄӝ׷਑่ᄬٰफ़եᝌੌ่ᄬޑ៻Ԕ ໆǶӧճҔ஑཰жπቷ܌ගٮޑ኱ྗ CMOS-MEMS ᇙำ೽ϩǴҁፕЎ೛ीрΟᅿόӕ ߎឦϷϟႝቫޑଛ࿼ٰಔԋѳ่݈ᄬǴ٠མଛࡕᇙำуπמೌٰ༾ፓᝌੌ่ᄬϐ᏾ᡏࠆ ࡋǴᙖԜफ़եᝌੌ่ᄬޑ៻ԔໆǶ

Ѥ

Ѥǵ༾ᐒႝᡄᒠ႔ϐኳᔕϩ݋

4.1 ༾ᐒႝᡄᒠ႔ϐ೛ीኳᔕࢬำ

ࣁΑाᡍ᛾༾ᐒႝᡄᒠ႔ޑёՉ܄ǴҁፕЎճҔԖज़ϡનϩ݋ (finite element analysis)೬ᡏࡌᄬϡҹޑ3-DኳࠠǴኳᔕϩ݋ϡҹޑ੝܄ǴхࡴǺӅਁ୏ኳᄊ(modal

߄ 4.1 ճҔߎឦჹߎឦௗ᝻ޑեྕᇙำ܌ᇙբޑ༾ᐒႝᡄᒠ႔ϐᜢᗖЁκ ᒡΕႝᓸಔࣁ(1,1)ک(0,0)ޑ֎ߕႝᓸ(Pull-in voltage) 27.83/39.29 V

Ⴃයޑᏹբᓎቨ(Expected bandwidth) 40 kHz

ฅԶǴҗҁ࿯ޑኳᔕ่݀ёޕǴ10 μm ޑЍኖᝌᖉኺޑቨࡋϷ 3 μm ޑ΢Πႝཱུޑ

4.1.2 ኳᄊϩ݋(modal analysis)

ҁፕЎύǴ٬Ҕ୘ҔԖज़ϡનϩ݋೬ᡏ ANSYS ٰ଺ኳᄊϩ݋(modal analysis)Ǵ܌

ࡌҥޑϡҹ 3D ኳࠠх֖ᇑڅϾǴӢࣁх֖ᇑڅϾǴ܌а᏾ᡏኳࠠ׎ރၨࣁፄᚇǴࣁ؃

ᆒྗǴ٬Ҕ࿯ᗺၨӭޑϡન 186 (element solid 186)ٰ଺ϩ݋Ǵ٠ׯᡂᆛ਱ελаዴᇡኳ ᔕ่݀คᇤǴҞ߻٬Ҕ 12933 ঁᆛ਱ϡનȐelementȑኧҞǶ

კ 4.1 Ԗज़ϡનݤϐϡҹኳᄊϩ݋ (a)ಃ΋Ӆਁᓎวғӧ 40.28 kHzǹ(b)ಃΒӅਁᓎวғ

ӧ 89.29 kHz

კ 4.1 ࣁճҔ ANSYS ೬ᡏ܌ࡌҥޑᆛ਱ϯ 3-D ϡҹኳࠠǶӵკ 4.1(a)܌ҢǴϡҹޑ

ಃ΋Ӆਁᓎ౗ࣁ 40.28 kHzǴԜਔᝌੌѳ݈аЍኖቸᘽࣁືЈբᙋᙋ݈Ԅޑסᙯၮ୏Ƕ ӵკ 4.1(b)܌ҢǴϡҹޑಃΒӅਁᓎ౗ࣁ 89.29 kHzǴԜਔᝌੌѳ݈ޑٿୁ຾Չӕ؁ޑ΢

Πਁ୏Ƕϡҹբ୏ӧԾฅᓎ౗ΠǴ཮วғӅਁޑ௃׎ǴၸΑ၀ᓎ౗ࡕϡҹޑៜᔈ཮זೲ

ጠӝ(coupling)ޑ౜ຝౢғǶҗኳᔕޑ่݀ว౜ǴԜٿঁӅਁ౗ޑՏ࿼Ԗ٤ௗ߈ǴѸ໪ӧ

҂ٰޑࣴز΢уаঅ҅Ƕ

4.1.3 ϡҹޑᡄᒠфૈ(logic functions)ኳᔕ

ӧҁፕЎύǴќѦճҔԖज़ൂϡϩ݋೬ᡏ(CoventorWare) ஒচӃ೛ीӳޑӀ࿽ᔞ (mask layout)Ϸ؂΋ቫޑࠆࡋᒡΕܭ೬ᡏύǴࡌҥр࣬ჹᔈޑ3-D༾ᐒႝᡄᒠ႔ኳࠠǶճ ҔԜኳࠠᡍ᛾ӧಃΒക࿯܌ගрޑᡄᒠ೛ी౛ፕǴх֖ϡҹޑᡄᒠфૈϐբ୏БԄϷځ ރᄊᙯඤфૈǶኳᔕޑ่݀ӵკ4.2܌ҢǴ྽ᒡΕૻဦಔӝ(input A, inpu B)ࣁ(0,0)ਔǴᝌ

ੌޑѳ݈཮଺଍ਔଞ(counterclockwise)Бӛޑᙯ୏Ǵ຾Զᒡр1ޑૻဦ(฻ӕܭVcc+)Ƕ྽

ᒡΕૻဦಔӝࣁ(1,1)ǵ(1,0)Ϸ(0,1)ਔǴᝌੌޑѳ݈཮଺໩ਔଞ(clockwise)ޑᙯ୏Ǵ຾Զ ᒡ р ૻ ဦ 0 ( ฻ ӕ ܭ Vcc-) Ƕ ќ Ѧ Ǵ ऩ ٩ ׇ ࡼ а ό ӕ ޑ ႝ ᓸ ಔ ӝ ((0,0)↔^(1,1)↔^(1,0)↔(0,1))Ǵᝌੌ่ᄬߡૈ໩ճޑவচٰޑଶܫفࡋ௽ᙯԿΠ΋ঁ೛

ۓޑفࡋǴԜኳᔕ่݀ӕਔёዴᇡԜ่ᄬޑᡄᒠфૈϐբ୏БԄϷރᄊᙯ౽ࣣ҅ዴค ᇤǴ຾Զᡍ᛾Ԝ༾ᐒႝNOR႔ޑёՉ܄Ƕ

ԜѦǴѝाஒNOR႔ޑୃᓸϸௗ(Vcc-Ϸ Vcc+)Ǵӕኬ٩ׇᒡΕѤᅿኧՏૻဦಔӝǴ ӵკ4.3 ܌ҢǴҗځჹᔈޑ௽ᙯБԄǴҭё᛾ܴ܌೛ीޑ༾ᐒႝᡄᒠ႔ૈ୼ӧό׳ׯᐒ ఓ่ᄬޑރݩΠǴᙖҗ׳ׯޔࢬୃᓸޑଛ࿼ǴԶၲډNAND႔ޑᡄᒠфૈǶ

კ 4.2 ճҔԖज़ϩ݋೬ᡏ(CoventorWare)ࡌҥр࣬ჹᔈޑ 3D ༾ᐒఓᡄᒠǶᒡΕޑႝᓸૻ

ဦಔӝᡂϯࣁ(0,0)⇔ (1,1) ⇔ (1,0) ⇔ (0,1)Ǵᝌੌѳ݈௽ᙯԿႣය೛ीޑБӛǴջё ᡣϡҹڀഢ NOR ႔ޑᡄᒠૻဦᒡрǶ

⇔ (1,1) ⇔ (1,0) ⇔ (0,1))Ǵ

Input A , B : ( 0 , 0 ) Input A , B : ( 1 , 1 )

Input A , B : ( 0 , 1 ) Input A , B : (1 , 0 )

4.1.4 ූ੮ᔈΚჹᝌੌѳ݈܌೷ԋϐ៻Ԕ׎ᡂኳᔕ

ਥᏵಃΟകූ੮ᔈΚޑ่ፕǴऩܭෳ၂ᝌᖉኺ่ᄬ΢ќѦ؈ᑈ᎑ߎឦȐᓸᔈΚǴ 70MPaȑǴ؈ᑈࠆࡋ0.3 μmǴ཮ளډ΋ঁѳڶޑᝌᖉኺ่ᄬǴӢԜ౛ፕ΢ᔈ௦Ҕ0.3 μmޑ

᎑ٰᇙբҁᡄᒠ႔ϡҹǴՠࢂҗܭҁჴᡍ܌٬ҔޑᐒѠ٠ߚ஑཰ᐒѠǴځᇙำ؈ᑈࠆࡋ ᜤа௓ڋྗዴǴ܌аҁፕЎӧኳᔕਔࢂਥᏵჴᡍ่݀(ஒܭ6.2.1λ࿯၁ॊǴୖკ6.2)௦Ҕ ᓸᔈΚࣁ70MPaǴ؈ᑈࠆࡋࣁ0.25 μmޑ᎑ٰᇙբҁᡄᒠ႔ϡҹǶ

ऩᝌੌѳ݈ڙډූ੮ᔈΚԶౢғӛ΢៻Ԕ(curl up)׎ᡂǴ٩Ᏽ 2.2.2 λ࿯ޑᡄᒠ႔ރ

კ 4.4 Ԗज़ϡન೬ᡏኳᔕѳ่݈ᄬޑ៻Ԕ׎ᡂǴځᆄᗺೀޑനε៻Ԕໆࣁ 0.75 μmǶ

4.2 λ λ่

ӧҁക࿯ճҔ୘ҔԖज़ൂϡ೬ᡏANSYSǴዴᇡ܌೛ीޑ༾ᐒఓᡄᒠ႔ځᏹբᓎ౗ё

ၲ40.28 kHzǶԜѦǴऩࢂ܌ᇙբޑᝌੌ่ᄬҗȸ᎑/Β਼ϯޖ/ߎ᎑ȹޑΟቫ่ᄬಔӝԶ ԋǴځύࠆࡋϩձࣁǺ0.25 μm/3 μm/0.3 μm Ǵኳᔕ่݀ว౜Ǵᝌੌѳ݈Ԗ۳Π៻Ԕޑᖿ

༈Ъനεޑ៻Ԕໆၲډ0.75 μmǶӢࣁ܌೛ीޑ΢Πႝཱུቫ໔ϐ໔ሜଯࡋࣁ3 μmǴӢԜ៻

Ԕໆ܌೷ԋޑ௽ᙯفࡋϝλܭᡄᒠфૈ܌ा؃ޑനε௽ᙯفࡋ− ×15 10⁻³radǴӢԜѳ݈

༾៻Ԕࡕ٠ό཮ޔௗᆶᒡрႝཱུௗ᝻Ǵ೷ԋϡҹᡄᒠфૈѨਏޑ௃ݩวғǶ

ԜѦǴճҔ୘ҔԖज़ൂϡ೬ᡏCoventorwareǴዴᇡ܌೛ीޑ༾ᐒႝᡄᒠ႔ϡҹёᏹ բӧ(Vcc+ǴVcc-) = (25Ǵ-25V)ǴϡҹڀԖᡄᒠфૈǴЪϡҹᒡрޑȨރᄊᙯඤȩё҅த

຾ՉǶԜѦǴ೸ၸኳᔕᡍ᛾Ǵ໻ሡाஒޔࢬୃᓸޑଛ࿼׳ׯǴϡҹջёҗNOR႔ޑᡄᒠ фૈᙯඤԋNAND႔ޑᡄᒠфૈǶ

Ԝᏹբႝᓸջёޔௗᆶ౜ӧޑICϡҹ຾Չ᏾ӝǴჴ౜ҁ༾ᐒႝᡄᒠ႔೛ीޑ೛ۓҞ኱Ƕ ฅԶǴ೭ኬޑ೛ीೕ਱ሡाཱུࣁᆒྗޑᇙำୖኧ௓ڋૈΚǶڙډᇙำᐒѠޑૈΚज़ڋǴ ҁፕЎϝ௦ҔӃ߻ߥӺޑ೛ीٰᇙբϡҹǴБߡ຾ՉϡҹޑёՉ܄ᡍ᛾Ƕ

ϖ

؁ᡯ 1ǺճҔߎឦগᚆݤ(Lift-off)ᇙբۭႝཱུޑߎឦᏤጕǵ֎ߕϷௗ᝻ႝཱུ

ӧߎឦগᚆݤᇙำ໒ۈϐ߻ǴሡाӃ࿶ၸႣӃమࢱϷႣӃ؈ᑈ᠎პϷ๊ጔቫԜٿঁ

ᇙำ؁ᡯǶฅࡕճҔ΋૓኱ྗమࢱำׇ(RCA clean process)Ǵ٠ຎሡाቚу੆ݰణࢧለྋ నǴஒ඲ТޑԡࢉނᏃёૈమନǶௗ๱ӧ඲Т΢ճҔ਼ϯᘉණ᝗ᆅԋߏ؈ᑈ 2000 Å ޑ ଳ਼਼ϯޖቫ(dry oxidation layer) Ϸ 1000 Å ޑේϯޖቫ(silicon nitride layer)ϩձ଺ࣁ᠎ პቫ(buffer layer)Ϸႝ܄๊ጔቫǶֹԋ΢ॊޑႣӃྗഢᇙำࡕǴௗ๱ӆ୺Չߎឦগᚆᇙ ำǶ२ӃǴӧ඲༝߄य़௽༡΋ቫ AZ-5214 ޑ҅ӀߔǴճҔΒԛᚼӀϷฯ੘(hard bake)ஒ ځϸᙯԋॄӀߔǴϐࡕӆ࿶ၸᡉቹ؁ᡯࡕۓကр܌ሡϐკਢǴௗ๱٬Ҕ዗ᇃᗓݤ؈ᑈ 300 Åሐߎឦ(chromium,Cr)ޑᗹ๱ቫǴҔаගଯߎឦߎᆶΠБ୷׷ޑߕ๱܄Ƕௗ๱ӆ؈ᑈ 0.1 μm ޑߎ྽բᏤႝቫǴനࡕճҔߎឦগပݤǴளډ܌ሡޑߎឦᏤጕǵ֎ߕϷௗ᝻ႝཱུǴ ၁ಒޑߎឦগᚆᇙำፎୖ 5.1.2 λ࿯Ƕ

؁ᡯ 2Ǻ؈ᑈ឴࣊ቫբࣁϡҹϐޜ਻໔ሜ(air gap)

аႝዀᇶշϯᏢ਻࣬؈ᑈس಍(Plasma Enhanced Chemical Vapor Deposition, PECVD)

؈ᑈ3 μm ޑߚ඲ޖ(Amorphous Silicon, α-Si)ǴԜߚ඲ޖ཮ӧϡҹញܫޑၸำύ೏౽ନǴ բࣁϡҹϐ΢Πႝཱུ໔ޑޜ਻໔ሜǴӢԜᆀࣁ឴࣊ቫǶௗ๱ճҔႝགጠӝႝዀԄޖᇑڅ س಍ȐICPȑஒȨс༧Ӏ࿽(dimple mask)ȩϷȨుྎӀ࿽(deep trench mask)ȩޑკਢᙯӑ ԿԜ឴࣊ቫ΢Ƕс༧Ӏ࿽ࢂӧ឴࣊ቫ΢ճҔߚ฻ӛ܄ଳᇑڅמೌǴۓကрుࡋऊ2 μmޑ пኲǴԶుྎ෤Ӏ࿽(deep trench mask)߾ࢂӧ឴࣊ቫ΢ճҔӕኬޑᇑڅמೌǴۓကрЍ ኖ่ᄬޑྎ෤ୁᏛ׎ރǶӧԜǴ໪ݙཀᇑڅᇙำ܌٬ҔޑᇑڅୖኧǴࢂёעпኲϐୁᏛ

ޑ᎑ߎឦᏤႝቫǶӧԜ໪ݙཀޑࢂճҔᇃᗓޑБԄ؈ᑈߎឦਔǴҗܭځ໘ఊᙟᇂ܄ό٫

аᘢᗓ(sputter deposition)ޑБԄ؈ᑈ0.25 μmޑߎឦ᎑ǴԜߎឦᖓጢନΑёаᔅշϡ ҹ่ᄬܢᏲଳᇑڅޑᚆη៎ᔐѦǴҭёፓ࿯༾่ᄬϣ೽ޑᕴූᎩᔈΚǴ጗ှ(mitigation)

კ 5.1 եྕߎឦௗ᝻ޑᇙำ؁ᡯ

კ 5.2 ճҔ݆η(cap)༤кϐௗᗺ

5.1.2 ᇙำ่݀Ϸ૸ፕ

Β਼ϯޖᖓጢࢂճҔ୯ৎڼԯϡҹჴᡍ࠻(NDL)ޑOxford Plasmalab System 100ᐒ ѠаPECVDݤ؈ᑈֹԋޑǶਥᏵЎ᝘[54-56]܌ගрޑჴᡍൔ֋ளޕǴቹៜᖓጢᔈΚޑᜢ

ਥᏵЎ᝘[32]߄ҢǴճҔᘢᗓݤ܌؈ᑈޑߎឦᖓጢǴӢচηናᔐਏᔈ(atomic peening effect)Ǵ٬ளᖓጢϣޑූᎩᔈΚᡂϯ཮ᆶ؈ᑈޑࠆࡋԖᜢǶӧҁፕЎύǴਥᏵ3.2λ࿯܌

ගрޑin situᖓጢᔈΚਠ҅ݤǴ؃рҔٰਠ҅/጗ک่ᄬϣ೽ᔈΚޑߎឦᖓጢቫࠆࡋࣁ0.3 μmǶՠڙډᐒѠޑज़ڋǴคݤᆒྗ௓ڋ؈ᑈୖኧǴЪᖓጢࠆࡋׯᡂǴූ੮ᔈճ੻཮ᒿϐ ׯᡂǴ܌аჴሞӧᇙբ༾ᐒႝᡄᒠ႔ϡҹਔǴ᎑ቫޑࠆࡋϝᒧҔ0.25 μmǶ

߄ 5.1 а PECVD ݤ؈ᑈΒ਼ϯޖ(SiO2)ᖓጢ Temperate (кк) 300ʚ

ΦN2O, ΦSiH4

[N2O/SiH4]

525 :75(sccm) 7

RF Power 100W

Cavity Pressure 1Torr

კ 5.3 ؈ᑈೲ౗ᆶ[N2O/SiH₄]ޑКॶᜢ߯კ[54]

კ 5.4 ූ੮ᔈΚᆶ[N2O/SiH₄]ޑКॶᜢ߯კ[55]

კ 5.5 ৔ᓎф౗ᆶᖓጢᔈΚϐᜢ߯[56]

 ߎឦগᚆݤ(Lift-off)

ߎឦগᚆݤϐচ౛ЬाࢂஒӀߔ༾ቹۓကрკਢࡕǴܭӀߔ΢Б؈ᑈߎឦᖓጢǴௗ

๱ճҔЧ✉(acetone)ѐନӀߔ٠ӕਔஒځ΢Бϐߎឦᖓጢ΋ଆ౽ନǴനࡕѝ੮Π܌ሡޑ კਢǶаΠஒ၁ॊځᇙำࢬำϐಒ࿯Ǻ

კ5.6ࣁߎឦগᚆݤᇙำࢬำǶӵკ܌ҢǴ२Ӄӧ඲༝߄य़௽༡΋ቫAZ-5214EӀߔ [57]Ǵ࿶җ೬੘(soft bake)ǵᚼӀࡕǴஒӀ࿽΢ϐკ׎ᙯӑԿӀߔ΢ǴԜਔӃό຾ՉᡉቹǴ ԶࢂӃஒӀߔа120ку዗2minǴᙖҗ๏ϒ፾྽ޑ዗ૈǴஒচӃࣁ҅Ӏߔޑ܄፦ϸᙯᡂ ԋॄӀߔޑ܄፦Ǵௗ๱ӆ຾ՉಃΒԛޑᚼӀ୏բǴԜԛޑᚼӀሡஒӀ࿽ڗΠǴᡣ඲༝຾

Չӄय़܄ޑᚼӀǴϐࡕӆ࿶җᡉቹޑ؁ᡯջёᕇள܌ሡϐკኬǶௗ๱ӆ٬Ҕ୯ৎڼԯϡ ҹჴᡍ࠻(NDL)ޑ዗ᇃᗓᐒ(Thermal Coater)ᗓߎឦᖓጢǴճҔႝཱུу዗Ⴂ׷Ǵ٬ϐᇃว ٠؈ᑈܭ඲༝߄य़Ǵ׎ԋ܌ሡޑߎឦᖓጢǶҗܭԜߎឦᖓጢࢂҔٰ྽଺ௗ᝻ႝཱུϷႝ܄

ೱௗҔǴӢԜࣁΑளډࠔ፦ၨ٫ޑߎឦᖓጢǴӧԜ܌ᒧ᏷ޑᇃᗓೲ౗ࣁ1Å/sǶќѦ໪ݙ ཀޑࢂǴӧᇃᗓޑၸำύǴ؂ᗓ΢500ÅޑߎឦᖓጢࡕߡଶЗᇃᗓǴࡑ዗ᇃᗓᐒޑ๚ᡏफ़

ྕԿதྕਔǴӆᝩុ຾Չ؈ᑈ୏բǴаᗉխऩ΋ԛᇃᗓਔǴӀߔ཮Ӣ๚ᡏྕࡋၸଯԶ೷

ԋҁيޑฯϯࣗԿౢғᓫ຋(crack)ޑ౜ຝǴᏤठӧࡕុ٬ҔߎឦগᚆݤਔǴ཮೷ԋคݤ

კ 5.6 ߎឦগᚆݤᇙำࢬำҢཀკ (a) ᚼӀ (b)ϸᙯ೬੘ϷΒԛᚼӀ (c)ᡉቹ (d) ᇃᗓ ߎឦᖓጢ (e) lift off

ᒧ᏷٬ҔAZ-5214EԖΟ໨ᓬᗺǺ(1)ԜӀߔޑࠆࡋၨᖓǴёаᡉቹрၨλጕቨǹ(2) ӀߔԖϸᙯϐ੝܄Ǵӧ࿶ၸΒԛᚼӀϷฯ੘(hard bake)ࡕǴAZ-5214E཮வচӃޑ҅Ӏߔ ϸᙯᡂԋॄӀߔǴ࣬ᜢޑᜢᗖୖኧǴӵ߄5.2܌ҢǶӢԜǴAZ-5214EନΑёаҔٰ྽բ ᇑڅਔޑฯԄ፿࿽ѦǴ೸ၸϸᙯޑ੝܄ҭёஒϐᔈҔӧߎឦগᚆᇙำ΢ǹ(3)ϸᙯࡕޑ AZ-5214ӀߔǴځୁᏛޑ׎ރࢂ΢ቨΠઞǴӵკ5.6(d)܌ҢǴԜ׎ރ཮ᡣ؈ᑈӧӀߔ΢ޑ ߎឦǴځ໘ఊᙟᇂ(step coverage)ૈΚᡂৡǴԶᡣӀߔ΢БᆶΠБޑߎឦόܰೱӧ΋ଆǹ ӀߔޑୁᏛٿᜐጔஒ཮੮Ԗλޜሜ(คߎឦᙟᇂ)ǴБߡЧ✉຾ΕǴᡣߎឦগᚆޑၸำ׳

ࣁ໩ճԋфǴё׳৒ܰᇙբр܌ۓကޑკ׎Ƕ

߄ 5.2 Ӏߔ AZ 5214 ׷਑ୖኧ

Spin speed [rpm] : 4000 rpm 1.4 μm

Prebake 110ʚ, 50s, hotplate

Flood exposure >200 mJ/cm²(uncritical) Reversal bake 120ʚ, 2min, hotplate

 ฻ӛ܄ޑଳԄᇑڅ௩ޜמೌ

ϡҹύޑ΢/Πႝཱུϐ໔ሜ೏೛ीࣁ3 μmǴՠჴሞ΢Ǵҗܭᝌੌ่ᄬ཮ڙډූ੮ᔈΚ ޑቹៜԶ೷ԋޑ៻Ԕ׎ᡂǴ٬ள໔ሜᡂޑ׳λǶҗܭᏼЈྒྷᇑڅמೌӧλ໔ሜΠǴёૈ

Ԗߕ๱(stiction)ޑᅪቾǶӵკ5.7(b)܌ҢǴଞჹϡҹϐֽ೽୔ୱܫεǴёᢀෳډ֎ߕޑ୔

༧ςੌຠӧ୷ۭ΢ǶӢԜӧҁЎύගрճҔ฻ӛ܄ޑଳԄᇑڅᇙำמೌڗж΋૓தҔޑ

ྒྷᇑڅᇙำמೌٰ௩ޜ༾่ᄬۭΠޑ឴࣊ቫǶ

(a) (b)

კ 5.7 (a)ӧྒྷԄᇑڅޑញܫᇙำֹԋࡕǴϡҹวғ֎ߕ(sticion)౜ຝ(b)ଞჹϡҹϐֽ೽

୔ୱܫεǴёᢀෳډ೏֎ߕޑ୔༧ςੌຠӧ୷ۭ΢Ƕ

ճҔ୯ৎڼԯϡҹჴᡍ࠻(NDL)܌ගٮޑᐒѠ(Oxford Plasmalab System 100)଺฻ӛ

܄ޑଳԄᇑڅᇙำਔǴ໪լܺΟঁᜢᗖୢᚒǺ(1) ሡԵໆ่ᄬቫᆶ឴࣊ቫޑᇑڅᒧ᏷К

Stiction area

ᡏૈӧ༾่ᄬۭΠԖ20 μmа΢ޑୁӛᇑڅૈΚ(undercut)ǴЪ឴࣊ቫૈ೏ֹ᏾ѐନ௩ޜ ԶคූᎩނǹ(3)җܭკ׎໔ຯຫλ܈ᇑڅௗ᝻ืαޑय़ᑈຫλǴ྽ଳᇑڅس಍ύޑϸᔈ ނ܈஥ૈໆޑᚆηคݤډၲᇑڅௗ᝻ืαϐۭ೽Ǵ܈ޣϸᔈޑౢނคݤ໩ճ௨рௗ᝻ื

ѦǴ٬ளᇑڅೲ౗फ़եǶԜ౜ຝᆀࣁ༾ॄၩਏᔈ(Micro Loading Effect)ǴЪय़ᑈຫλǴ Ԝ౜ຝຫᝄख़ǶࣁΑှ،΢ॊޑୢᚒǴਥᏵZhu, Tongtong฻Γ[58]ޑࣴزൔ֋ว౜ǴѸ

໪ଞჹᇙำᐒѠޑޑπբ๚ᡏᓸΚǵགᔈጠӝႝዀф౗(ICP power)Ϸ৔ᓎф౗(RF power) ԜΟᅿᇙำୖኧ຾ՉჴᡍࣴزǶӢԜǴӧҁЎύୖԵ[58]ޑЎ᝘ᇙբΑ΋঺ෳ၂่ᄬǴ ځᇙբࢬำӵკ5.8܌ҢǴ२Ӄӧsilicon wafer ΢Ӄ؈ᑈ΋ቫଳ਼ϯቫǴёٛЗᇑڅ਻ᡏ ӧᇑڅ឴࣊ቫਔǴό৒ܰװᔐډsilicon waferǶ឴࣊ቫࢂаPECVDݤ؈ᑈ3 μmޑߚ඲ޖ

(α-Si)ᖓጢǶ܌аᇑڅௗ᝻ืαޑଯࡋஒ཮೏ڰۓӧ3 μmǴջࣁ឴࣊ቫޑ؈ᑈࠆࡋǶᙟ

ᇂӧ឴࣊ቫ΢ޑ਼ϯޖ߾ࢂаPECVDݤ؈ᑈ 3 μmޑΒ਼ϯޖǴբࣁฯԄ፿࿽(hard mask)Ƕϐࡕׯᡂෳ၂่ᄬޑᇑڅௗ᝻ืαޑቨࡋǹׯᡂޑጄൎவനλ10 μm ډനε150 μmǴٰෳ၂ᐒѠޑᇑڅᒧ᏷К(s)ǵୁӛᇑڅૈΚϷ༾ॄၩਏᔈ(Micro Loading Effect)ࢂ

ցܴᡉǶ

კ 5.8 ෳ၂ ICP ᐒѠޑ฻ӛ܄ଳԄᇑڅ௩ޜૈΚϐෳ၂่ᄬᇙբࢬำკ

ࣁΑाᡣ༾่ᄬᆶ឴࣊ቫϐ໔ᏱԖၨଯޑᇑڅᒧ᏷КǴӧᇑڅᇙำύǴעᐒѠޑ৔

ӧ۳ፄޑჴᡍၸำύว౜(კ5.9)ǴOxford Plasmalab System 100 ᐒѠޑ༾ॄၩਏᔈ

౜ຝ٠όܴᡉǶӵკ5.9(b)܌ҢǴӧόӕελޑᇑڅืαύǴځୁӛᇑڅޑߏࡋ٠คܴ

ᡉόӕǴЪځᇑڅೲࡋࣁ15 Å/sec.(ୖ߄5.3)Ǵՠࢂᇑڅుࡋऩၲӵკ5.10܌Ңޑ20 μmϐ ࡕǴᇑڅೲ౗཮࡚ೲΠफ़ࣗԿଶЗǶ೭ж߄๱܌ਠፓрٰޑന٫ϯᇑڅୖኧǴёᡣ೛ी

ޣૈӧ่ᄬ΢ޑᇑڅϾελڀഢၨቸ܄ޑ೛ीЪᇑڅϾϐ໔ޑຯᚆനӳόाຬၸ20 μmǴӵԜ߾คሡाᏼЈ༾ॄၩਏᔈ೷ԋ༾่ᄬคݤញܫǶ

߄ 5.3 SF6 ฻ӛ܄ଳᇑڅޑᇙำୖኧ(ICP) Temperate (кк) 14ʚ

Selectivity: α-Si/

PECVD oxide 50 :1

RF Power 0W

ICP Power 1550W

Pressure 10Torr

Etch rate (Å/sec) 15

(a)

(b)

კ 5.9 ฻ӛ܄ଳԄᇑڅ௩ޜᇙำෳ၂่݀ (a) ᇑڅ߻่ᄬޑ΢ຎკǴ (b)ᇑڅࡕ่ᄬޑ

΢ຎკǴёว౜চӃෳ၂่ᄬΠБߚ඲ޖ឴࣊ቫ(ుڜଢ଼ՅБ༧୔ୱ Area_A)ǴӢୁ

ӛᇑڅޑᜢ߯Ǵς೏௩ޜࢣᅰ(և౜೸ܴ୔༧)ǶԜѦǴόӕελޑௗ᝻ืαځୁӛ ᇑڅుࡋ(Lc)൳Я΋ठǴӢԜղᘐค༾ॄၩ౜ຝౢғǶ

კ 5.10 ฻ӛ܄ଳᇑڅᇙำǴᐒѠۭϪૈΚёၲ 20 μmǶSilicon substrate ΢БϐߔᏲቫࣁ ଳ਼ϯቫ(Selectivity of α-Si / SiO2: >150:1)

Area_A

 ᖓጢᔈΚໆෳϐෳ၂่ᄬᇙำ೛ी

ࣁΑໆෳᝌੌѳ݈Ь่ᄬύ؂΋ᖓጢቫޑූᎩᔈΚǴҁፕЎ܌ගрޑׯؼԄ in situ ᖓጢᔈΚਠ҅ݤǴམଛԜݤǴҁࣴز೛ी/ᇙբΟᅿᔠෳ༾ᝌᖉኺ٠མଛٿᅿᜐࣚచҹǴ хࡴǺnominally clamped boundary Ϸ clamped boundaryǶ

კ 5.11 ࣁ่ᄬ A ޑᝌᖉኺϐᇙբࢬำǺ२Ӄӧ୷݈΢Ӄ؈ᑈ٠ۓက΋ቫ α-Si ޑ឴

࣊ቫǴௗ๱؈ᑈ٠ۓကΒ਼ϯޖޑЬ่ᄬቫǴϐࡕӧ௽༡΋ቫӀߔቫ྽բ឴࣊ቫޑฯԄ

፿࿽ǴӆճҔ΢ॊޑ฻ӛ܄ޑଳԄᇑڅמೌ௩ޜ่ᄬۭΠޑ឴࣊ቫǴനࡕӆѐନӀߔֹ

ԋ᏾ᡏჴբǶӵკ܌ҢǴԜ่ᄬ 1 ޑᝌᖉኺࣁ nominally clamped boundary [33]Ƕ܌а྽

่ᄬ೏ញܫࡕǴԜᝌᖉኺջ཮ӧڰۓᆄ཮ౢғᜐࣚ௽ᙯਏᔈǶ

ჴբ΢໪ݙཀǴࣁΑᡣᝌᖉኺૈӧᜐࣚೀౢғ௽ᙯਏᔈǴځۭϪޑ౜ຝ൩Ѹ໪ा௓

ڋளەǹջࢂዴߥ฻ӛ܄ଳᇑڅޑୁᇑుࡋǴёಖЗӧႣයޑᝌᖉኺᜐࣚǶҗ΢ॊޑ฻

ӛ܄ޑଳԄᇑڅ௩ޜמೌளޕǴۭϪ౜ຝനεёၲ 20 μmǶຬၸࡕǴځᐒѠᇑڅೲ౗൩

཮ᡂޑߚதᄌǶӢԜǴךॺёճҔԜ੝܄೛ी΋ँрӀ࿽(MASK A)Ǵӵკ 5.11(b)܌ҢǴ

٬ளᙟᇂӧᝌᖉኺ΢БޑӀߔӧᝌᖉኺڰۓᜐࣚՏ࿼ೀӭँр 20 μmǶ

җܭᝌᖉኺϷ឴࣊ቫڬൎڙډӀߔޑߥៈǴ܌аӧ଺฻ӛ܄ޑଳԄᇑڅᇙำਔǴᇑ څ਻ᡏѝ཮வ҂ڙߥៈޑᇑڅืαೀᇑڅ឴࣊ቫǶΞӢࣁԜᝌᖉኺ่ᄬޑ׷਑ࣁ೸ܴޑ Β਼ϯޖǴ܌аךॺૈᙖҗᡉ༾᜔ᅱෳ฻ӛ܄ଳᇑڅޑୁᇑ(ۭϪ)ుࡋǴёಖЗӧႣය ޑᜐࣚՏ࿼΢ǶԜѦǴ໪ݙཀᝌᖉኺܭڰۓᆄޑۯ՜ߏࡋ (ӵკ 5.11 ܌Ңϐ L1ߏࡋ) Ѹ໪ाКᝌᖉࠆࡋε 5 ډ 10 ७Ǵωό཮٬ᝌᖉኺڙډᚐѦޑυᘋԶቹៜځᜐࣚ௽ᙯਏ ᔈǶ

კ 5.11 ่ᄬ 1 ޑᔠෳᝌᖉኺϐᇙբࢬำ

კ 5.11 ࣁКၨԖค೛ीँрޑӀߔቫǴځᝌᖉኺӧ࿶ၸଳᇑڅᇙำࡕ܌ౢғޑۭϪ

౜ຝǶӵკ 5.12(a)ǵ(b)܌ҢǴऩค೛ीӀߔቫǴᝌᖉኺᜐࣚ཮ౢғၸᇑ౜ຝǴϸϐǴᝌ ᖉኺᜐࣚό཮ౢғၸᇑ౜ຝǶ

კ 5.13(a)ࣁᚈቫԄᝌᖉኺ(่ᄬ 2)ޑᇙբࢬำǺ२Ӄӧ୷݈΢Ӄ؈ᑈ٠ۓက΋ቫ α-Si ޑ឴࣊ቫǴϐࡕӆ؈ᑈ٠ۓက΋ቫߎឦᖓጢቫϷΒ਼ϯޖޑЬ่ᄬቫǴа׎ԋᚈቫ่ᄬ ٠མଛ clamped boundaryǶӧԜǴ໪ݙཀЬ่ᄬቫޑ׷਑ϷЁκࣣሡᆶ่ᄬ 1 ΋ठǶӕ ኬޑǴკ 5.13(b)ࣁΟቫԄᝌᖉኺ่ᄬ(่ᄬ 3)ޑᇙำࢬำǴᆶ่ᄬ 2 Ьाޑৡ౦ӧܭǺ

่ᄬ 3 ࣁ่ᄬ 2 ΢ӆ؈ᑈ٠ۓက΋ቫߎឦᖓጢቫǶӵԜǴ่ᄬ 3 ջࣁΟܴݯ่ᄬ٠ڀഢ

clamped boundaryǶკ 5.14 ࣁᡉ༾᜔ۭΠ܌ᢀෳډញܫࡕޑ่ᄬ 2 Ϸ่ᄬ 3 ϐ΢ຎკǶ

კ 5.12 (a)҂೛ीँрӀߔቫਔǴᝌᖉኺڰۓᜐࣚೀۭΠޑ឴࣊ቫ৒ܰᎁڙډᇑڅ਻ᡏ ϐװᔐԶౢғпഐޑკႽ (b)Ԗ೛ीँрޑӀߔቫਔ(ୖკ 5.11)Ǵᇑڅ਻ᡏόܰޔ

ௗװᔐᝌᖉኺڰۓᜐࣚೀۭΠޑ឴࣊ቫǴӢԜคၸᇑ౜ຝౢғ(คпഐޑკႽ)

კ 5.14 (a) ᡉ༾᜔ۭΠ܌ᢀෳډញܫࡕޑ่ᄬ 2 ϐ΢ຎკ (b)ᡉ༾᜔ۭΠ܌ᢀෳډញܫ ࡕޑ่ᄬ 3 ϐ΢ຎკ่ᄬǶ

5.2 ༾ ༾ᐒႝᡄᒠ႔ᇙբࢬำǺTSMC 0.35 μm 2P4M

ӧҁλ࿯ύǴගраTSMC܌ගٮޑ0.35μm 2P4MޑCMOS-MEMSޑᇙำٰ೛ी/ᇙ բԜ༾ᐒႝᡄᒠ႔ǴԜᇙำޑᓬᗺӧܭځᆶICϡҹޑ᏾ӝૈΚϷᇙำߡەǶฅԶ௦Ҕ CMOS-MEMSᇙำמೌᇙբϡҹਔǴҗܭࢂեྕᇙำޑᜢ߯ǴЪځᇙԋୖኧ٠҂ଞჹ༾

ᐒႝس಍ޑᝌੌ่ᄬፓ᏾ǴӢԜᝌੌ่ᄬܰڙډූ੮ᔈΚޑቹៜԶౢғ៻Ԕ׎ᡂǴᝄख़ ޑ၉ஒ཮٬ளϡҹޑᡄᒠфૈѨਏǶ܌аǴҁፕЎ೛ीΑόӕߎឦϷϟႝቫ܌௢᠄Զԋ ޑᝌੌ่ᄬǴ٠མଛӄय़ଳᇑڅ (blanket etch)ޑࡕᇙำמೌǴவჴᡍޑ่݀ፓࢗϩ݋ٗ

ᅿ௢᠄ಔӝޑ่ᄬ೛ीǴനૈᕇளѳڶޑᝌੌ่ᄬǶԜѦǴѐନ឴࣊ቫޑࡕᇙำמೌҭ

ࢂҁᇙำύख़ाޑᜢᗖמೌϐ΋ǹӢԜǴҁࣴزύ٬ҔΑόӕޑྒྷᇑڅనٰѐନ឴࣊

ቫǴ຾Զ᏾౛όӕྒྷᇑڅనჹ่ᄬቫϷ឴࣊ቫޑᇑڅᒧ᏷КǶ

5.2.1 TSMC 0.35 μm 2P4M ᇙำ؁ᡯࢬำ

ճҔCMOS-MEMSᇙำמೌᇙբҁ༾ᐒႝᡄᒠ႔Ǵӧթֽޑ೽ϩǴЬाԵໆޑӢન ԖǺ(1) ௦Ҕmetal-2ቫޑߎឦ྽բ឴࣊ቫǴӕਔmetal-2ቫѸ໪ҭࣁߚ฻ӛ܄ଳᇑڅޑߔ ᏲቫǶӢࣁϡҹሡाޖ୷ٰ݈Ѝኖmetal-1ۭႝཱུǴӢԜޖ୷݈όૈڙډᇑڅװᔐǴ܌а (tungsten plugs)[17]Ƕ

ࡕᇙำ೽ϩ߾ࢂ௦ҔΑ୯ৎ඲Тس಍೛ीύЈ(CIC)܌ගٮޑߚ฻ӛ܄ϸᔈᚆηଳ ᇑڅᇙำ (anisotropic RIE dry etch process)ᡣ឴࣊ቫ߄य़៛рࡕǴӆԾՉ೛ी΋঺ྒྷᇑڅ ᇙำ؁ᡯٰញܫϡҹޑᝌੌ่ᄬǶӧԜ؁ᡯǴѸ໪ዴߥᇑڅనѝ཮ଞჹ឴࣊ቫᇑڅԶό

კ5.15ࣁType-1่ᄬ೛ीޑᇙำࢬำǴځ၁ಒޑᇙำ؁ᡯ௶ॊӵΠǺ

؁ᡯ aǺ೛ीPadӀ࿽კ׎

კ5.15(a)ࣁճҔTSMC CMOS 2P4M ኱ྗᇙำ܌ᇙբֹԋޑϡҹওय़่ᄬǶࣁΑा

ѐନ೽ϩӧmetal-4ቫ΢ޑߥៈቫ(Passivation)Ǵ௦ҔҗCIC܌ගٮޑPadӀ࿽(Pad Mask) ᙺਵ(Via-12ϷVia-23)ૈ୼៛рϟႝቫѦǴаճߎឦჹߎឦޑௗ᝻ǶਥᏵTSMC 0.35μm 2P4Mᇙำޑ೛ी[59]ǴߎឦቫϷϟႝቫޑࠆࡋϩձऊࣁ0.65 μmϷ1 μmǴӢԜǴ่ᄬ΢

ޑϟႝቫԿϿѸ໪೏౽ନ௞0.25 μmǴωૈዴߥௗ᝻ᆄޑߎឦૈ୼ၲډؼӳޑௗ᝻ਏ݀Ƕ ӧԜ؁ᡯύǴ௦Ҕ጗ፂ਼ϯᇑڅనǴ(six parts of 40%ǴNH4F and one part of 49% HF, Buffered Oxide Etch (BOE)) ճҔ” ਔ໔௓ڋᇑڅݤ(time etch)” ੆ዎ᏾ঁϡҹܭBOEᇑ څనύऊ15ࣾǴၲډന٫ޑਏ݀Ƕ

ֹԋԜᇙำ؁ᡯࡕǴ΢Πႝཱུቫ໔ϐ໔ሜႣीऊࣁ1.5 μmǶӧԜǶॶளݙཀޑࢂǴ ϟႝ਼ϯቫନΑࣁϡҹ่ᄬቫѦǴӕਔҭ೏೛ीࣁᝌੌѳ݈܌ሡाޑ๊ጔ่ᄬ(isolation feature)ǴӵԜωૈᡣѳ݈஥ԖᚈႝཱུǵᚈႝՏޑ੝܄Ƕ

؁ᡯ eǺӄय़܄ޑଳᇑڅᇙำ

ճҔϸᔈᚆηᇑڅᇙำ(STS RIE process)ଞჹϡҹ߄य़΢ޑϟႝቫբӄय़܄ޑᇑ څǶԜ؁ᡯஒ،ۓᝌੌ่ᄬ΢ޑϟႝ፦ቫࠆࡋǴёҔٰ௓ڋᝌੌѳ݈Ӣූ੮ᔈΚޑᙋԔ

׎ᡂǶԜѦǴᇙำύ܌٬ҔޑᐒѠࣁSTSϦљ܌ᇙ೷ǴࠠဦࣁMODEL C001-4ǶԜᐒѠ ЬाࢂճҔϤࢧϯ౷ႝዀ(SF6 plasma)଺ߚ฻ӛ܄ޑᇑڅǴځᇑڅΒ਼ϯޖ(SiO2)ޑᇙำ

ୖኧςӈܭ߄5.4ύǶ

നࡕǴ࿶ၸ΢ॊϖၰࡕᇙำמೌǴջёֹԋtype-1ޑϡҹჴբǶ

კ5.16 ࣁtype-2ϡҹ೛ीޑᇙำǴᆶtype-1ϡҹᇙำനεޑৡ౦ೀӧܭtype-2ϡҹᇙ ำύޑߥៈቫ(passivation layer)΋ᜢۈࢂ҂೏౽ନޑǴӵԜૈߥៈځۭΠޑmetal-4ቫǴ

٬ளᝌੌ่ᄬቫх֖metal-4Ϸmetal-3ǴӢԜtype-2ϡҹϐ᏾ᡏࠆࡋ཮Кtype-1ࠆǶයఈૈ

ᙖҗࠆࡋޑቚуٰफ़եූ੮ᔈΚჹѳ݈܌೷ԋޑ៻Ԕ׎ᡂǶ

კ5.17 ࣁtype-3ޑϡҹ೛ीޑᇙำǴځᇙำ؁ᡯᆶtype-2ֹӄ࣬ӕǴ୤΋όӕϐೀ

ӧܭtype-2ޑᝌੌ่ᄬቫх֖metal-4Ϸmetal-3ǴԶtype-3ޑޑᝌੌ่ᄬቫ໻х֖metal-4Ǵ ӧԜ٠όӭуᙧॊǶ

߄ 5.4 ߚ฻ӛ܄ଳᇑڅΒ਼ϯޖϐᇙำୖኧ(STS,RIE) Temperate (кк) 300ʚ

ΦSF6 40 (sccm)

RF Power 50W

Cavity Pressure 100 mTorr Etch rate (Å/sec) 17.5

!

კ 5.15 Type-1 ༾ᐒႝᡄᒠ႔ޑᇙำࢬำკ

კ 5.16 Type-2 ༾ᐒႝᡄᒠ႔ޑᇙำࢬำკ

კ 5.17 Type-3 ༾ᐒႝᡄᒠ႔ওय़კ

5.2.2 ᇙำ่݀Ϸ૸ፕ

ճҔTSMC܌ගٮޑCMOS-MEMSޑᇙำٰ໒ว༾ᐒႝᡄᒠ႔ϡҹǴҗܭ߻ъࢤޑ ᇙำࢂ௦ҔжπኳԄ܌ֹԋޑǴӢԜѝሡݙཀթֽ೛ीࢂց҅ዴջёǶฅԶϡҹࢂցё ᇙբԋфǴࡕᇙำޑמೌωࢂᜢᗖǶаΠஒ၁ಒ૸ፕࡕᇙำჴբޑ่݀ǵ܌ᎁၶډޑୢ

ᚒϷځှ،ޑБݤǶ

 ߥៈቫڙཞୢᚒ (Passivation layer damage)

კ5.18 ࣁӧᡉ༾᜔ۭΠ܌ᢀෳډޑtype 2 Ϸtype 3 ޑϡҹ΢ຎკǴԜ΢ຎკࣁճҔ PadӀ࿽ϷRLSӀ࿽թֽ೛ीࡕǴӆ࿶ၸ༾ቹᇑڅᇙำࡕ܌և౜ޑჴᡍ่݀Ƕӵკ܌ҢǴ ӧmetal 4ቫ΢ޑߥៈቫڙډࢌᅿำࡋޑװᔐǴԶ೭ঁ౜ຝวғӧ೚ӭԛޑΠጕइᒵύǴ Ҟ߻ϝפόрዴϪޑচӢǶӧtype 2 Ϸtype 3ޑϡҹ೛ीύǴߥៈቫࢂ೏೛ीҔٰߥៈ

ۭΠޑmetal-4ޑϡҹ่ᄬቫǴ܌аऩߥៈቫڙډઇᚯǴஒ٬ளtype 2 Ϸtype 3ޑϡҹᇙ բؼ౗फ़եǶ

კ 5.18 ࣁճҔ Pad Ӏ࿽Ϸ RLS Ӏ࿽ޑ༾ቹᇑڅᇙำࡕǴ܌և౜ޑ type-2 Ϸ type-3 ϐϡ ҹ९ຎკǶӵკ܌ҢǴӧ metal-4 ቫ΢ޑߥៈቫڙډࢌᅿำࡋޑװᔐǶ

 ྒྷᇑڅߎឦ឴࣊ቫޑࡕᇙำמೌ

җܭႝᓸૻဦಔǴVcc+ϷVcc-Ѹ໪ࡼуѳ݈ޑѰѓٿୁႝཱུ΢ǴӢԜӧѳ݈ۭΠޑ metal-2ߎឦ឴࣊ቫޑ܌Ԗߎឦූ੮ނǴѸ໪ֹӄѐନଳృωૈٛЗอၡޑ౜ຝวғǶࣁ Αाᡣϡҹڀഢߎឦჹߎឦௗ᝻ޑфૈǴӧҁᇙำ೛ीύࢂ௦Ҕߎឦᙺਵٰ྽բс༧่

ᄬǶӢԜӧࡷᒧ܈ፓଛྒྷᇑڅనਔǴѸ໪Եቾډ܌٬Ҕޑᇑڅనૈ୼ֹӄ౽ନߎឦ឴࣊

ቫԶό཮ઇᚯډϡҹ่ᄬޑϟႝቫϷௗ᝻ᆄޑߎឦᙺਵǶӵਥᏵӃ߻ޑTSMC 0.35μm 2P4M ᇙำϐЎ᝘ӣ៝(ୖკ1.25)ளޕǴߎឦቫࢂҗΟᅿߎឦ܌ಔӝԶԋǴх֖Αߎឦ

⑲ǵߎឦේϯ⑲Ϸߎឦ᎑ǶӢԜǴҁࣴزଞჹ೭Οᅿߎឦ׷਑ޑᇑڅࣴزΑѤᅿᇑڅన хࡴǺ(1)᎑ᇑڅన(aluminum etchant)ǵ(2)ᡵ܄ᇑڅనAD-10(TMAH2.38%+ࣚय़ࢲ܄Ꮚ)ǵ (3)ьᛥለ(Carro's acid)Ϸ(4)⑲ߎឦᇑڅన(titanium etchant)ǴճҔҬϕ੆ݰޑБݤٰѐନ

܌Ԗӧ឴࣊ቫޑߎឦ׷਑Ƕ߄5.5ӈрԜѤᅿᇑڅనޑಔԋԋҽϐଛ࿼Кٯǵᇑڅྕࡋǵ ᇑڅೲ౗Ϸᇑڅ׷਑฻ᜢᗖୖኧǶ᎑ᇑڅనࢂаᕗለ(H3PO₄)ࣁЬाޑಔԋԋҽǴՠӢ ࣁᕗለڀԖଯᗹᅉ܄(high viscosity)Ǵ܌аӧѳ่݈ᄬۭΠǴᚆᇑڅϾၨుЪၨᇻޑ឴࣊

ቫǴ߾ሡा޸຤׳ӭޑਔ໔ٰѐନϐǴҭёૈԖคݤֹӄ೏ѐନޑᅪቾǶӢԜǴ೚ӭЎ

᝘[60], [61]ࡌ᝼௦Ҕьᛥለ(Carro's acid)ߎឦᇑڅనٰ౽ନԜߎឦ឴࣊ቫǶьᛥለߎឦᇑ څనёӕਔѐନ឴࣊ቫύޑߎឦ᎑ǵߎឦ⑲Ϸේϯ⑲Οᅿߎឦ׷਑ǴฅԶӧკ5.19ޑჴ ᡍ่݀ύว౜Ǵऩࢂ၂კճҔьᛥለٰᇑڅ឴࣊ቫϣޑߎឦ׷਑Ǵᇑڅֹ౥ࡕǴϝ཮ว

౜ԪՅ༾ಈޑԦࢉނ፦ූᎩӧmetal-2឴࣊ቫ΢Ƕ೭٤ᆀϐࣁޖዦ(Silicon Nodules)ޑ༾ಈ ނ፦[62]ǴӢࣁคݤֹӄ೏ѐନǴᡣᝌੌ่ᄬޑញܫ(release)ᇙำѨ௳Ƕ

߄ 5.5 ߎឦྒྷԄᇑڅೲ౗ୖኧ(Å/min)

Aluminum Ti/TiN Tungsten (W)

Aluminum Etchant (32H3PO4:1NHO3:

5HAc:6H2O)

Heated Bench 80ʚ

Aluminum Initial etch rate : 34000 Underetch 50 [um], Etch time : 0.2 hour Underetch 150 [um],

Etch time : 1.6 hour

Ø Ø

AD-10 Aluminum 3000~4000 Ø Ø Carro’s acid Aluminum/Ti

/TiN

1800 Ti:240/

TiN:300

Ø

Titanium Etchant Ti/TiN ɧ100 8800 >100

კ 5.19 ճҔьᛥለѐନߎឦ឴࣊ቫࡕǴϝԖޖዦ(Silicon Nodules)ޑ༾ಈނ፦ූᎩ metal-2឴࣊ቫ΢Ƕ

ҁፕύගрճҔAD-10ᡵ܄ޑᇑڅనٰ౽ନmetal-2឴࣊ቫϣޑߎឦ׷਑ǴЬाԖٿ

ঁԵໆӢનǶӢન΋ǺAD-10மᡵᇑڅనᏱԖࣚय़ࢲ܄Ꮚ(active surfactants)ёफ़եనᡏ ޑ߄य़஭ΚǴᔅշமᡵనTMAH(2.38%)ૈᇸܰޑૈᅖ೸ډᇑڅϾۭΠޑߎឦ឴࣊ቫǴу ೲ᏾ঁᇑڅϸᔈޑೲ౗Ъคᗹᅉ܄ޑୢᚒǶӢનΒǺӧჴᡍύว౜ǴAD-10ᇑڅనჹܭ

่ᄬύޑ਼ϯޖϷ឴࣊ቫߎឦ᎑ޑᇑڅᒧ᏷К࣬྽ؼӳǴ൳Яό཮ᇑڅ਼ϯޖǴ܌аค ሡ௓ڋϼӭޑᇑڅᡂኧǴѝሡஒϡҹᓉ࿼ӧᇑڅనϣ΋ࢤਔ໔ࡕǴջёֹӄᇑڅ឴࣊ቫ ύЬाޑߎឦ᎑׷਑ǶҗܭAD-10ᇑڅన٠ό཮װᔐ឴࣊ቫύޑߎឦ⑲Ϸේϯ⑲೭ٿቫ ᖓጢ׷਑ǴӢԜAD-10ᇑڅనӧѐନ௞ߎឦ᎑ࡕǴѸ໪ӆ٬Ҕߎឦ⑲ᇑڅనٰѐନഭᎩ ޑٿቫᖓጢ׷਑(ߎឦ⑲Ϸේϯ⑲)Ƕკ5.20ࣁճҔAD-10Ϸ⑲ᇑڅనޑᇑڅ่݀Ƕҗჴᡍ

่݀ว౜ǴᢕϾྎኲ(Via trenches)ϣޑߎឦᙺਵςֹӄ೏ᇑڅࢣᅰǶԜ౜ຝж߄๱ߎឦ

⑲ᇑڅనӕਔჹߎឦᙺԖ๱࣬྽זೲޑᇑڅϸᔈǶӵԜǴஒᏤठচӃ೛ीࣁΑߎឦௗ᝻

ޑᙺਵ่ᄬӢڙډઇᚯԶคݤၲډႣයޑҞ኱ǶԿϞǴךॺϝคݤפډ፾྽ޑᇑڅనૈ

୼ӧѐନේϯ⑲ߎឦ׷਑ਔǴό཮װᔐډߎឦᙺǶ

კ 5.20 ೸ၸ SEM კёว౜Ǵϡҹӧ࿶ၸߎឦ⑲Ϸ⑲ϯӝނޑྒྷᇑڅᇙำࡕǴᢕϾྎኲ (Via trenches)ϣޑߎឦᙺਵ(tungsten plug)ςֹӄ೏ᇑڅࢣᅰǶ

5.3 λ λ่

ҁക࿯ϟಏ༾ᐒႝᡄᒠ႔ޑᇙำ೽ϩǴࣁΑᡣϡҹૈᏱԖߎឦჹߎឦௗ᝻ޑфૈǴ ҁࣴزගрΑٿᅿCMOS࣬৒ᇙำמೌٰ೛ी/ᇙբ܌ගрޑ༾ᐒႝᡄᒠ႔ϡҹ೛ीǴϩ ձࣁճҔߎឦᙺ(tungsten)྽ௗ᝻୵׷਑ޑTSMC 2P4M 0.35 μm CMOS-MEMS ᇙำᆶ ճҔԾՉࣴวճҔߎឦߎ(au)ࣁௗ᝻׷਑ޑեྕᇙำǶ

௦ҔԾՉࣴวޑᇙำ܌ᇙբޑϡҹǴӢࣁᇙำ೛ीၨڀቸ܄ǴӢԜၨૈ಄ӝϡҹޑ

੝ਸᇙำሡ؃ǶЬाޑࡷᏯӧܭᝌੌ่ᄬޑූ੮ᔈΚᔈΚံᓭǶ௦ҔCMOS-MEMSᇙำ ᗨฅёᕭอᇙբϡҹޑਔำϷᇙำޑፄᚇࡋၨեǴՠӧᇙำύ܌ౢғޑᖓጢූ੮ᔈΚό

৒ܰѐନǴѝૈ೸ၸ่ᄬቫޑᒧ᏷ٰफ़եёૈޑᖓጢූ੮ᔈΚౢғǶԜѦǴҁፕЎࣴز Αόӕޑᇑڅనٰᇑڅߎឦ឴࣊ቫǴനࡕᒧ᏷AD-10Ϸ⑲ᇑڅనǶฅԶҗჴᡍޑ่݀ว

౜Ǵߎឦᙺᆶߎឦ឴࣊ቫޑᇑڅᒧ᏷Кό٫Ǵ܌аҞ߻ϝฅคݤၲԋߎឦɡߎឦௗ᝻ޑ

܄ૈा؃Ƕ

Ϥ

Ϥǵໆෳ่݀ᆶ૸ፕ

ҁക࿯ஒ٩ׇᇥܴճҔ΢ॊٿᅿᇙำ܌ᇙբрޑϡҹځໆෳϩ݋ޑ่݀Ƕ

6.1 ԾՉ໒วᇙำᇙբϐϡҹ੝܄ໆෳ

6.1.1ߎឦௗ᝻ϡҹϐ่ᄬᢀෳ

კ6.1ࣁճҔԾՉࣴวޑ༾ᐒႝᇙำ܌ᇙբޑᡄᒠ႔ϡҹǴԜਔკύޑᡄᒠ႔ۘ҂؈

ᑈߎឦ᎑ᖓጢǶӵკ܌ҢǴҗܭΒ਼ϯޖᖓጢቫࢂ೸ܴޑ׷਑ǴӢԜӧѳ่݈ᄬ΢ޑ๊

ጔቫ׎ރǵΒ਼ϯޖᖓጢቫۭΠޑߎឦႝཱུϷс༧่ᄬ೿ё೸ၸᡉ༾᜔ᢀෳǶٿᒡΕႝ

ᓸૻဦவᒡΕႝཱུAϷB(input terminal A and B)ࡼу຾ѐǶс༧่ᄬՏӧѳ݈ۭΠޑѰѓ ٿୁǶٿᒡрႝཱུ߾ӧϡҹۭႝཱུޑѰѓٿᆄೀǶനࡕǴѰѓٿᆄޑᒡрႝཱུ཮࿶ၸႝ

਻ϕೱޑБԄ೏᏾ӝӧ΋ଆǶ

კ 6.1 ӧԾՉࣴวᇙำύǴ҂؈ᑈനࡕ΋ၰ᎑ߎឦቫϐ༾ᐒႝᡄᒠ႔ѦᢀϷႝᓸଛ࿼Б

კ6.2ࣁۘ҂ញܫޑϡҹ่ᄬځ၁ಒওय़ЁκკǶ3.97 μmޑߚ඲ޖᖓጢቫ(឴࣊ቫ) ࠆࡋϷ2. 21 μmޑс༧่ᄬޑଯࡋǴ٬ளс༧ᆶۭႝཱུϐ໔ޑຯᚆѝԖ1.85 μmǶᝌੌ่

ᄬቫҗ΢ԿΠϩձࣁǺ᎑/Β਼ϯޖ/ߎ᎑ǴځࠆࡋϩձࣁǺ0.258 μm/ 2.94 μm/ 0.317 μm εऊ฻ܭᆶჴᡍ೛ीୖኧǶໆෳኧঁ೏ញܫޑϡҹǴჴᡍޑ่݀ว౜܌Ԗޑᝌੌ่ᄬࣣ

཮ᇸ༾ޑӛΠ៻ԔǶკ6.3(a)ࣁճҔқӀυੋሺ(White Light Interferometers)ໆෳځύϐ

΋ޑᝌੌѳ݈ǴӧញܫࡕޑᙋԔ׎ᡂໆǶҗܭᝌੌѳ݈۳Π៻Ԕ0.86 μmޑՏ౽ໆǴӵԜ ஒ೷ԋ΢/Πႝཱུϐௗ᝻໔ሜελவচӃޑ1.85 μm ᕭλԿ1 μmаΠޑຯᚆǴՠϝё҅த ၮբǶԜຯᚆஒ೷ԋѳ݈ޑ໼௹(௽ᙯ)فࡋ೏ܥ״ӧ8Ø10^-3 radаΠǴ٠಄ӝѳ݈ޑ໼௹

فࡋό཮ຬၸځനε΢ज़(ᏹբᗺՏ࿼)ޑচ߾ǶԜѦǴჴሞໆෳډޑѳ݈៻Ԕໆࣁ0.86 μmǴᆶճҔԖज़ϡનݤ(FEM)܌ኳᔕႣෳޑ0.75 μmޑѳ݈៻Ԕໆ(ୖԵ4.1.4λ࿯, კ4.4

܌Ң)ǴऊౣԖ10%ޑᇤৡໆǶКၨϡҹޑѳ่݈ᄬӧۘ҂؈ᑈ΋ቫҔٰፓ࿯ϡҹϣ೽ᔈ Κϐߎឦ᎑ᖓጢਔǴკ6.3(b)ࣁѳ݈ӧញܫࡕǴໆෳډޑ៻Ԕ׎ᡂໆऊࣁ2 μmǶฅԶӧ ញܫѳ่݈ᄬ߻Ǵѳ݈ᆶΠႝཱུϐ໔ޑޜሜ(gap)໻Ԗ1.8 μmǶӢԜёղᘐԜਔޑѳ่݈

ᄬᔈς࿶ᆶΠႝཱུௗ᝻Ǵ٬ளϡҹӧ҂ࡼуҺՖ០୏ႝᓸਔǴ΢Πႝཱུς࣬ϕೱௗǴӵ Ԝஒ٬ளϡҹ഼ѨႣය೛ीޑᡄᒠфૈǶҗ΢ॊޑჴᡍ่݀ҭёᡍ᛾ճҔin situ ᖓጢᔈ Κਠ҅ݤǴ،ۓ่ᄬ΢ߕуߎឦቫޑᖓጢࠆࡋࡕǴջёᙖҗΟܴݯޑ่ᄬ೛ीफ़եᝌੌ

ѳ݈ޑ៻Ԕ׎ᡂǶ

Silicon substrate Nitride/Oxide

Au

Al

Au/Al

a-Si Oxide

2.94ʛm 0.258ʛm

0.317ʛm

2.12ʛm

1.85ʛm (dimple)

(gap)

კ 6.2 ӧԾՉࣴวޑᇙำύǴϡҹۘ҂ញܫ߻Ǵځс༧่ᄬওय़კ

კ 6.3 ӧԾՉࣴวޑᇙำύǴ༾ᐒႝᡄᒠ႔ӧញܫࡕޑᙋԔໆϩ݋ (a)Οܴݯޑѳ่݈

ᄬǴځᙋԔໆࣁ 0.86 μm (b)ᚈቫԄѳ่݈ᄬǴځᙋԔໆࣁ 2 μm

6.1.2 ߎឦௗ᝻ϡҹϐ୏ᄊ੝܄ໆෳ

ࣁΑाໆෳϡҹޑ୏ᄊϸᔈǴӧҁჴᡍύ௦Ҕޑႜ৔೿Νୌਁ୏ໆෳس಍Ϸམଛᆛ ၡϩ݋ሺ(network analyzer)ٰໆෳϡҹޑ୏ᄊៜᔈǶ

კ6.4ࣁϡҹޑᓎ౗(frequency)ៜᔈໆෳ่݀ǴځӅਁᓎ౗(resonant frequency)ࣁ39 kHzǶԜໆෳډޑӅਁᗺᆶճҔკ6.2ޑჴሞϡҹЁκǴஒځ஥Εኧॶीᆉځኳᔕ่݀ࣁ 42.07 kHzǴऊౣԖ7%ޑᇤৡໆǶԜѦǴࣁΑ؃ளϡҹޑߔѭК(͎)Ǵךॺࡌҥ΋ঁ኱ྗ

Β໘س಍མଛس಍᠘ձޑБԄǴவჴᡍޑ่݀ϸ௢ᆉϡҹޑߔѭК(͎)ࣁ0.098Ƕ

კ 6.4 ӧԾՉࣴวޑᇙำύǴ༾ᐒఓᡄᒠ႔ϐᓎ౗ៜᔈკǶಃ΋Ӆਁᓎऊӧ 39 kHzǴኳ ᔕॶࣁ 42.03 kHzǶ

6.1.3 ϡҹϐᡄᒠૻဦໆෳ

კ6.5ࣁჴᡍໆෳࢎᄬҢཀკǶӵკ܌ҢǴ२Ӄ΋໒ۈճҔᚈᒡрޑႝྍٮᔈᏔ (Agilent E3631A)ӧᝌੌޑѳ݈ځѰѓٿᜐޑႝཱུϩձࡼу+25 VϷ-25 V(ӧԜۓက+25

Vᆶ-25 VޑႝᓸૻဦࣁኧՏૻဦޑ1ᆶ0)բࣁϡҹޑޔࢬୃᓸǴӆճҔMEMS Motion ananlzer (MMA)уܫεᏔ(Power Amplifier)עMMAޑᒡрႝᓸૻဦܫεǴӧᒡΕႝཱུ

(input Aǵinput B)ύࡼу+25V܈-25VޑႝᓸૻဦǶࣁΑБߡᢀෳᒡΕૻဦᆶᒡрૻဦޑ ᜢ߯Ϸᡂϯ௃ݩǴᒡΕૻဦᆶᒡрૻဦௗଌԿҢݢᏔ(oscilloscope)Ǵ٠ஒځॶᡉҢӧᑻ ჿ΢ޑΟঁόӕࠟޔڅࡋޑՏ࿼΢Ƕ

კ 6.5 ༾ᐒఓᡄᒠ႔ϐᡄᒠૻဦໆෳࢎᄬҢཀკ

კ6.6ࣁᡄᒠ႔ϡҹޑᒡΕϷᒡрϐૻဦᜢ߯ໆෳ่݀Ƕӧᏹբਢٯ(a)ύǴٿಔᒡ ΕႝᓸૻဦȐკύǺInput A, Input Bȑӧ(0,0)ᆶ(1,1)а100 Hzޑᓎ౗຾ՉϪඤǴԶᒡрᆄ

ႝཱུȐკύǺOutputȑ߾ࢂᒡр࣬ჹᔈޑ1ᆶ0ޑႝᓸૻဦǶ೸ၸԜѤঁᏹբਢٯ(a)-(d) ޑჴᡍ่݀Ǵว౜܌ᇙբޑ༾ᐒႝϡҹૈჴ౜NORᡄᒠ႔ޑႝၡфૈǶӕኬޑჴᡍࢎ

ᄬǴஒѳ݈΢ޑѰѓٿᜐޑୃᓸ҅ॄϸௗǶ೸ၸკ6.7ޑჴᡍ่݀ว౜Ǵ܌ᇙբޑϡҹҭ

ૈჴ౜NANDᡄᒠ႔ႝၡޑфૈǶӢԜǴᆕӝ΢ॊჴᡍޑ่݀Ǵᡍ᛾ΑճҔߎឦௗ᝻ᇙ ำ܌ᇙբޑᡄᒠ႔ǴѝሡाׯᡂϡҹޑଛጕБԄǴջёӧӕ΋ᐒఓ่ᄬύჴ౜NORک NANDٿᅿᡄᒠ႔ႝၡޑфૈǶ

Input (0,1)

2ms/div 10V/div Input (1,1)

6.1.4 ߎឦௗ᝻ϡҹϐૈໆ઻ཞໆෳ

(J_elastic)ǵႝࢬ೯ၸϡҹϣ೽ޑೱௗᏤጕǴ܌೷ԋޑႝߔૈໆཞ઻(Jresistor)ǴаϷϡҹϣ೽

೭Οᅿૈໆ੃઻ёᙖҗаΠޑϦԄϩձࣁ՗ᆉрٰǺ

ӧԜǴKtࢂЍኖቸᘽޑ௽ᙯখ܄(torsinal stiffness)ǴځॶёҗϦԄȐ2.4ȑ՗ᆉᕇள ऊࣁ9.68*10^-6(NǸmǸrad^-1)Ǵθࢂѳ݈໼௹(௽ᙯ)فࡋǴθmaxࣁѳ݈ޑനε໼௹فࡋǴӧ Ӹӧϡҹޑסᙯቸᘽ(torsional spring)΢ǴԶࢂ೏ޜ਻ߔѭޑߔΚ(damping forces)܌੃

઻ǶӢԜҁϡҹޑϪඤ઻ཞऊࣁ0.6337 nJǶ

კ 6.8 (a)ࣁෳ၂ф౗ཞ઻ޑႝၡଛ࿼კ (b) ϡҹӧᏤ೯ਔ(turn on stage)ޑኩᄊႝᓸᡂϯ (V_r(t))Ƕ܌ໆෳډޑ΢ϲਔ໔t_sऊࣁ 14.8 μsǶ

6.1.5 ߎឦௗ᝻ϡҹϐ໒ᜢტڮ(life time)ໆෳ

ӧໆෳϡҹϐ໒ᜢტڮ߻ǴךॺӃՉෳ၂ϡҹޑᐒఓ੝܄ϐტڮ (Mechanical lifetime)ǹջࢂόᡣϡҹޑ΢ΠႝཱུԖނ౛΢ޑௗ᝻Ǵٰᢀჸځᐒఓ੝܄ࢂց཮ᒿ๱ߏ ਔ໔ޑᏹբԶᡂϯǶவჴᡍޑ่݀ёளޕǴϡҹբ୏ԛኧຬၸɧ10⁶ԛࡕǴ٠҂ว౜Һ ՖܴᡉޑӢન٬ளϡҹޑᐒఓਏૈཞѨ܈ϡҹޑ่ᄬڙډઇᚯ฻ୢᚒǶᒿࡕǴ຾Չჴሞ ޑ໒ᜢෳ၂Ǵջࢂᡣϡҹޑ΢ΠႝཱུԖ๱ނ౛΢ޑௗ᝻ǹᝌੌѳ݈வѳᑽՏ࿼௽ᙯ٠ௗ

᝻ډᒡрႝཱུǶவჴᡍޑ่݀ว౜Ǵෳ၂ϡҹӧᏹբᓎ౗ࣁ100HzਔǴځ໒/ᜢբ୏ԛኧ ຬၸ24,000ԛࡕǹջࢂբ୏ਔ໔ऊ5ϩដѰѓǴ൩ߚத৒ܰวғᝌੌ่ᄬߕ๱ޑୢᚒ (stiction problem)ǴԜਔᒡΕႝᓸࣁ႟ǴЍኖቸᘽ܌ගٮޑቸ܄ࡠൺΚ(restoring force)ค ݤஒᝌੌ่ᄬ܎ӣԿНѳޑՏ࿼Ƕךॺෳ၂ΑኧঁϡҹǴ٩ฅ೿཮Ԗӕኬޑୢᚒр౜Ƕ ӢԜךॺճҔScanning Electron Microscope (SEM)ϷAtomic Force Microscopy (AFM)ሺ

༧่ᄬϷௗ᝻ۭႝཱུޑ߄य़ಉᕫࡋໆෳ่݀Ƕҗໆୁ่݀ύளޕǴс༧่ᄬӧߎឦɡߎ ឦௗ᝻߻ځ߄य़ಉᕫࡋࣁ12.57 nmǴӧௗ᝻ࡕࣁ5.73 nmǹௗ᝻ۭႝཱུӧௗ᝻߻ځ߄߄य़ ಉᕫࡋࣁ5.16 nmǴӧௗ᝻ࡕࣁ4.13 nmǶԜ่݀ᆶЎ᝘[39-41]ޑࣴزൔ֋ᜪ՟Ƕӧკ6.10 ޑSEMკύёᢀჸډௗ᝻ۭႝཱུӧௗ᝻߻/ࡕ٠คܴᡉޑᡂ׎Ǵՠࢂӧс༧่ᄬ΢߾ว

౜ځ߄य़ޑ׷਑ςԖ೽ϩগᚆ܈ᛈઇ܄ޑઇཞ౜ຝวғǶӢԜ௢ᘐǴԜ΋ઇᚯ౜ຝࣁϡ ҹݠℚ౜ຝޑচӢǶԜ౜ຝҭ૶ၩܭځѬޑЎ᝘ύ[37], [38]ǶᆕӝςޕޑЎ᝘Ǵךॺ௢

ෳ཮೷ԋߎឦௗ᝻ᆄߕ๱ޑ౜ຝǴୢᚒёૈӧܭ០୏ႝᓸၸε(±25V)Ǵӧຬၸ24,000ԛ ޑ໒ᜢԛኧࡕǴ࣬ϕௗ᝻ޑ΢Πႝཱུஒ৒ܰ೏ᇨวрႝठᎂ౽(electromigration)ޑਏᔈ [63]܈༾ႝౌਏᔈ(micro welding effect) [37], [38]฻Ǵ೷ԋௗ᝻ᆄ߄य़׷਑গᚆ܈ઇཞǶ ၁ಒௗ᝻ᆄႝཱུӧௗ᝻ਔޑނ܄ᡂϯϷ೷ԋߕ๱౜ຝޑ౛ፕϩ݋Ǵёૈሡा׳ుΕޑࣴ

زϷ௖૸ࡕωૈ୼౛ှǶ߄6.1ӈрճҔԜᇙำ܌ᇙբޑ༾ᐒႝᡄᒠ႔ځௗ᝻܄ૈϷ࣬ᜢ

ୖኧǶ

߄ 6.1 ӧߎឦჹߎឦௗ᝻ᇙำύǴ༾ᐒႝᡄᒠ႔ځௗ᝻܄ૈϷ࣬ᜢୖኧ Turn-on resistance ≈^{100 Ω}

Turn-off resistance Out of range Mechanical lifetime ɧ10⁶ cycles Electrical lifetime 2.4×10⁴ cycles

კ 6.9 с༧่ᄬ(dimple)Ϸௗ᝻(contact)ႝཱུӧߎឦჹߎឦௗ᝻߻ࡕǴځ߄य़ಉᕫࡋໆෳ

่݀

კ 6.10 ྽ϡҹวғߎឦߕ๱(stiction)ޑୢᚒਔǴႝཱུ߄य़׷਑཮Ԗগᚆ܈ઇ຋ޑ౜ຝǶ

6.2 TSMC 0.35 μm 2P4M ᇙ ᇙբϐϡҹ੝܄ໆෳ

6.2.1ϡҹ่ᄬᢀෳ

კ6.11ࣁ࿶ၸࡕᇙำჴբࡕǴ܌ֹԋޑtype-1༾ᐒႝᡄᒠ႔೛ीǶӵკ܌ҢǴtype-1 ޑჴሞЁκࣁߏ260 μmǴቨ110 μmϷᝌᖉኺቨࡋࣁ15 μmǶҗܭϟႝቫࣁ೸ܴ׷਑Ǵ܌

аёаӧᡉ༾᜔ۭΠమཱޑ܌ᢀჸډѳ่݈ᄬ΢ޑ๊ጔ่ᄬǵϟႝቫۭΠޑߎឦႝཱུϷ с༧่ᄬ฻թֽ೛ीǶӵკ܌ҢǴVcc+ϷVcc-ޑႝᓸࡼуӧڰۓᗕ(anchors)΢Ǵᙖҗѳ݈

ޑ΢ΠЍኖኺ่ᄬǴஒႝᓸ໺ᏤԿᝌੌޑѳ݈΢ǶᒡΕޑႝᓸૻဦ߾ࢂࡼуӧᒡΕႝཱུ

AϷB΢(input terminal A and B)ǴԶс༧่ᄬ೏ଛ࿼ӧᝌੌѳ݈ۭΠޑѰѓٿୁϐᜐጔ

ೀǶ྽΢Πႝཱུௗ᝻ਔǴ೛ीӧϡҹѰѓٿୁޑᒡрᆄႝཱུǴջёᒡрჹᔈޑႝᓸૻဦǶ ԜѦǴ໪ݙཀޑࢂǺӢࣁճҔԜᇙำᇙբϡҹਔ໪ԵໆډҔٰߥៈߎឦႝཱུޑ਼ϯ ޖᔈᚆႝཱུԖ5 μmޑ໔ຯǴ܌аtype-1ϡҹޑᜢᗖ೛ीЁκ໪К߄4.1ޑЁκ೛ीӭр10 μmޑ጗ፂ໔ຯǴӵԜωૈዴߥᇑڅనό཮װᔐډϡҹϣޑߎឦႝཱུǶ

კ 6.11 CMOS-MEMS ᇙำ܌ᇙբޑ type-1 ༾ᐒႝᡄᒠ႔ѦᢀϷႝᓸଛ࿼БԄ

 ᝌੌ่ᄬޑ៻Ԕ׎ᡂ

კ6.12ࣁtype 1ϡҹύޑᝌੌ่ᄬ៻Ԕ׎ᡂໆǶӵკ6.12(a)܌Ң่ᄬӛΠ៻ԔЪനε

៻Ԕ׎ᡂวғӧٿୁǴനεᡂ׎ໆऊࣁ0.485 μmǶԜ׎ᡂໆஒ೷ԋ΢Πႝཱུޑ໔ຯऊࣁ1 μmǶќѦКၨ΋ᝌੌ่ᄬځ҂࿶ၸӄय़ଳᇑڅᇙำמೌǴӵკ6.12(b)܌ҢǴനε׎ᡂໆ ऊࣁ0.785 μmǴԜ׎ᡂໆஒ೷ԋ΢Πႝཱུޑ໔ຯऊࣁ0.7 μmǶ܌аǴਥᏵԜჴᡍ่݀ё ว౜ǴӧCMOS MEMSޑᇙำ೛ीύǴёճҔӄय़ଳᇑڅᇙำמೌٰ༾ፓϡҹ่ᄬቫޑ ࠆࡋǴᙖԜׯᡂѳ݈ϣޑූ੮ᔈΚϩթٰၲԋ΋ѳڶޑᝌੌѳ่݈ᄬǶ

კ6.13ࣁtype 2Ϸtype 3ϡҹӧ่ᄬᝌੌࡕǴճҔқӀυੋሺ܌ෳໆрޑ่ᄬ៻Ԕᡂ

׎ໆǶᗨฅtype 2ޑϡҹ೛ीځ่ᄬӛΠ៻Ԕޑ׎ᡂໆѝԖ0.25 μmǴՠࢂҗܭচӃᙟᇂ ӧmetal 4ቫ΢БޑߥៈቫڙډװᔐઇᚯǴೱ஥ᡣmetal 4ቫচӃ଺ࣁϣ೽ೱௗᏤጕޑ೽ϩ ҭڙډઇᚯǴ٬ளႝૻဦคݤ҅ዴ໺ሀԿϡҹ΢ǴᏤठϡҹࡺምคݤ٬ҔǶ

Type 3ޑᝌੌ่ᄬ۳Π៻Ԕ׎ᡂໆࣁ1.95 μm(ӵკ6.13(b)܌Ң)ǴԜ׎ᡂໆऊ฻ܭ΢

Πႝཱུ໔ޑ໔ሜǴж߄๱ѳ݈ٿୁޑ΢ႝཱུӧ҂ࡼу០୏ႝᓸΠǴρ࿶ௗ᝻ډΠႝཱུǶ Ԝ่݀ஒ೷ԋѳ݈คݤճҔᓉႝΚ௓ڋѳ݈ޑڋ୏БӛǴ٬ளϡҹѨਏǶ

җჴᡍ่݀ว౜ǴऩाճҔTSMC 2P4Mޑᇙำٰᇙբᡄᒠ႔ϡҹǴtype-1ϡҹ่ᄬ

೛ीࢂၨ٫ޑᒧ᏷ǴӢࣁԜ೛ीନΑёჴ౜ၨѳڶޑᝌੌ่ᄬѦǴ٠ЪёаόሡԵቾߥ

ៈቫ৒ܰڙډઇᚯޑୢᚒǶ

კ 6.12 type-1 ϡҹޑ៻Ԕ׎ᡂໆ(a) ࿶ၸϸᔈᚆηӄय़ଳᇑڅᇙำࡕǴѳ่݈ᄬ۳Π៻

Ԕ 0.48 μmǶ(b)ό࿶ၸϸᔈᚆηӄय़ଳᇑڅᇙำࡕǴѳ่݈ᄬ۳Π៻Ԕ 0.785 μmǶ

კ 6.13 ࿶ၸ STS ϸᔈᚆηӄय़ଳᇑڅᇙำࡕǴtype-2 Ϸ type-3 ϡҹޑ៻ԔໆǶ(a) type-2 ϡҹ่ᄬ۳Π៻Ԕ 0.25μmǶ(b)type-3 ϡҹ่ᄬ۳Π៻Ԕ 1.95μmǶ

6.2.2 ϡҹ୏ᄊ੝܄ໆෳ

ӧҁჴᡍύ௦Ҕޑࢂ୯ৎ඲Тس಍೛ीύЈ(CIC)܌ගٮޑႜ৔೿Νୌਁ୏ໆෳس

಍Ϸམଛᆛၡϩ݋ሺ(network analyzer)ٰໆෳϡҹޑ୏ᄊៜᔈǴځࢎ೛БԄӵკ6.14܌

ҢǶკ6.15ࣁϡҹޑᓎ౗(frequency)ៜᔈໆෳ่݀ǴځӅਁᓎ౗ပӧ36 kHzǶ

ќѦǴऩӧϡҹޑځύϐ΋ޑᒡΕᆄǴᒡΕ10sin(2π*10³t)VޑႝᓸૻဦǴځѬႝཱུ

߾೛ۓࣁ႟ҷ੝Ǵ٬ளႝᓸৡ໻җᒡΕߞဦ،ۓǶӵკ6.16܌ҢǴϡҹ΢ޑѳ݈ځठ୏

ޑᓎ౗ࣁ០୏ႝᓸᓎ౗ޑٿ७ǴӕਔځՏ౽ໆऊࣁ90 nmǶ

җܭচӃ೛ीҔٰ྽଺ௗ᝻ႝཱུޑߎឦᙺਵ่ᄬǴ৒ܰڙډࡕᇙำᇑڅనޑװᔐ (ୖ5.1.2λ࿯ޑჴᡍ่݀)ǴӢԜճҔԜᇙำ܌ᇙբрٰޑϡҹǴځᒡрޑႝૻဦϝคݤ

೸ၸҢݢᏔ܈ႝᒮᢀჸໆෳډǶӢԜǴҞ߻ѝૈ೸ၸӀᏢس಍ᢀෳʑໆෳޑБԄٰᡍ᛾

Ԝϡҹޑᡄᒠфૈ[18]ǶΨӢࣁҞ߻၀ϡҹۘคႝ܄ૻဦᒡрǴӧҁፕЎύ٠҂ӆճҔ ၀ϡҹ຾Չᡄᒠфૈޑ܄ૈໆෳǶ

ʳ

კ 6.15 ӧ CMOS-MEMS ᇙำύǴϡҹޑӅਁᓎ౗ࣁ 36 kHzǶ

კ 6.16 ӧ COMS-MEMS ᇙำύǴ༾ᐒఓᡄᒠ႔ϐኩᄊϸᔈკǹᒡΕޑૻဦࣁ 10sin(2Ø 10³πt)VϷѳ݈Տ౽ऊ 90 nmǶ

6.3 λ λ่

ҁകև౜Αٿᅿόӕᇙำ܌ᇙբޑ༾ᐒႝᡄᒠ႔ϡҹϐໆෳჴᡍ่݀ǶӧԾՉࣴว ޑᇙำБय़ǴҁࣴزਥᏵin situᖓጢᔈΚਠ҅ݤǴගрӧѳ่݈ᄬ΢ӆ؈ᑈ΋ቫߎឦᖓ ጢǴᙖԜፓ࿯่ᄬϣ೽ޑූᎩᔈΚϐ೛ीǹவᢀෳѳ่݈ᄬޑ៻Ԕໆᡂϯ่݀Ǵᡍ᛾Α Ԝ೛ीБԄૈԋф጗ှѳ݈ӢූᎩᔈΚޑញܫ܌೷ԋޑ៻Ԕ׎ᡂໆǶӕਔǴҁЎਥᏵಃ

Βകޑ೛ी౛ፕǵಃΟകޑኳᔕ่݀ϷಃѤകޑᇙำ೛ी܌ჴբֹԋޑϡҹǴϡҹЁκ ߏ250 μmǴቨ100 μmϷ3.97 μmޑ໔ሜଯࡋǶ೸ၸϡҹϐ୏ᄊ੝܄ໆෳǴϡҹϐӅਁᓎ౗

ࣁ 40.03 kHzǵon resistance ≈^{100 Ω}ǵoff resistance Ǻ out of rangeǵ switching loss≈^1.482 nJǵmechanical/electrical lifetimeǺ10⁶ cycles / 2.4×10⁴ cyclesǶ ԜѦǴҗჴᡍ่݀ёᡍ᛾Ǵ ҁࣴز܌೛ीޑ༾ᐒႝᡄᒠ႔ڀԖNAND܈NOR႔ޑᡄᒠфૈǴЪ໻ሡा೸ၸ׳ׯޔࢬ

ୃᓸޑБԄǴόሡा׳ׯᐒఓ่ᄬ೛ीǴߡૈஒᡄᒠ႔ޑфૈӧNANDϷNOR႔໔բϪ ඤǶ

ӧCMOS-MEMS ᇙำБय़ǴϡҹЁκߏ260 μmǴቨ110 μmϷ1.5 μmޑ໔ሜଯࡋǶᗨ ฅҞ߻܌ᇙբрٰޑϡҹϝคႝૻဦᒡрǴՠ೸ၸჴᡍޑ่݀ёว౜type-1ޑᇙำ೛ी

ёӧԜᇙำύᕇளѳڶޑѳ่݈ᄬǴӧᏹբႝᓸࣁ10/0 VΠǴ౽୏ጄൎ 90 nmǴЪځӅ

ਁᓎ౗ࣁ36 kHzǶ

Ύ

ीǴځ125 μmߏޑᝌੌѳ่݈ᄬѝӛΠ៻Ԕ0.485 μmǶԜѦǴࣁΑाჴ౜ߎឦௗ᝻ޑҞ

኱ǴӵՖᡣྒྷᇑڅనૈӧѐନTi/TiN/Alޑߎឦ឴࣊ቫਔ٠ό཮װᔐϡҹ่ᄬ׷਑ࣁԜᇙ ำ೛ीޑനεࡷᏯǴӢԜӧԜᇙำύǴፓࢗΑѤᅿྒྷᇑڅన(᎑ᇑڅనǴAD-10Ǵьᛥለ

Ϸ⑲ᇑڅన)ǴՠԿҞ߻ࣁЗ٠҂ว౜ӝ፾ޑྒྷᇑڅనёၲډ೛ीҞ኱Ƕ

ӧϡҹޑໆෳ่݀೽ϩǺӧԾՉࣴวϐᇙำ೛ीБय़(ߎឦჹߎឦௗ᝻եྕᇙำ)Ǵ җܭᇙำڀഢၨቸ܄ޑ೛ीࢬำǴӢԜёჴ౜ҁፕЎ܌ගрޑϡҹೕ਱Ǵҗځᜢᗖޑϡ ҹᡄᒠၮᆉϐႝૻဦᒡрǶԜচࠠϡҹޑ೛ीЁκࣁߏ250 μmǴቨ100 μmϷ3.97 μmޑ໔ ሜଯࡋǶਥᏵჴᡍޑ่݀ǴԜϡҹޑёӧᓎ౗ࣁ100 HzǴႝᓸελࣁ25/-25VΠᏹբ٠ѝ

ӧ҂ٰޑࣴزύǴךॺஒࣴزֽ೽ߎឦԋࠠמೌǴځཷۺࣁᙖҗᜪ՟ᐒఓуπޑБ ԄǴ༾уπ่ᄬޑௗ᝻୵ǴٯӵǺճҔFIB (Focused Ion Beam)ӧௗ᝻ᆄֽ೽༾уπǹᗓ

΢ό਼ܰϯЪКߎ׳ڀখ܄ޑߎឦ׷਑Ǵӵკ7.1܌Ңޑȸႌ(Pt)ȹߎឦǶӵԜǴᔈёֹ

ӄׯ๓ௗ᝻ߎឦ਼ܰϯϷคႝૻဦᒡр฻ୢᚒǶ

(a) (b)

კ7.1 (a) ҂ᗓႌߎឦ߻ޑௗ᝻୵ (b) ᗓ΢ႌߎឦޑௗ᝻୵

ୖ

ୖԵЎ᝘

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