1. H.M Kim et al. “Preparation of large area free‐standing GaN substrate by HVPE using mechanical polishing liftoff method” Material letters 47(2001) pp.276~280
2. R.J. Molnar et al. “Growth of gallium nitride by hydride vapor‐phase epitaxy” Journal of Crystal Growth 178， pp.147~156(1997
3. Kazumasa Hiramatsu at el. “Fabrication and characterization of low defect density GaN using facet‐controlled epitaxial overgowth (FAELO)” ， Journal of Crystal Growth， 221 pp. 316~326 (2000)
4. J. I. Pankove， “Gallium Nitride (GaN) I”(Academic press， San Diego，
1998)
5. X. Xu et al. “Growth and characterization of low defect GaN by hydride vapor phase epitaxy” Journal of Crystal Growth 246 pp223–229 (2002) 6. L. Zhang et al. “Lateral epitaxial overgrowth of GaN using diethyl gallium
chloride in metal organic vapor phase epitaxy” Journal of Crystal Growth 235 pp115–123 (2002)
7. S. Gu et al. “The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by HVPE” Journal of Crystal Growth 231 pp342–
351 (2001)
8. Wang et al. “Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by HVPE” Appl. Phys. Lett., Vol. 80, No. 25, 24 June 2002
9. X. Xu et al. “Growth and characterization of low defect GaN by hydride vapor phase epitaxy” Journal of Crystal Growth 246 (2002) 223–229 10. X. Xu et al. “Fabrication of GaN wafers for electronic and optoelectronic
devices” Optical Materials 23 (2003) 1–5
11. Michal K. KELLY et al. ”Large Free‐Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser‐Lnduced Liftoff” ， Japan Journal of
substrates and GaN layers grown by different techniques” Journal of Crystal Growth 257 (2003) 1–6
14. C. Wang et al. “Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy”
Journal of Crystal Growth 230 (2001) 377–380
15. J.‐w. Lee et al. “Low temperature buffer growth to improve hydride vapor phase epitaxy of GaN” Materials Science and Engineering B59 (1999) 12–15 16. H. Jin Kim et al. “Pre‐treatment of low temperature GaN buffer layer
deposited on AlN/Si substrate by hydride vapor phase epitaxy” Surface and Coatings Technology 131 (2000) pp465‐469
17. H.M. Kim et al. “Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi‐layer” Materials Letters 46 (2000) pp286–
290
18. H.M. Kim et al. “Preparation of large area free‐standing GaN substrates by HVPE using mechanical polishing liftoff method” Materials Letters 47 (2001) pp276–280
19. W. Zhang et al. “Modulated growth of thick GaN with hydride vapor phase epitaxy” Journal of Crystal Growth 234 (2002) pp616–622
20. Zhang et al. “Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation” Appl. Phys. Lett., Vol. 78, No.
6, 5 February 2001
21. W. Gotz et al. “Electronic and structural properties of GaN grown by hydride vapor phase epitaxy” Appl. Phys. Lett. 69 (2), 8 July 1996
22. Gotz et al. “Hall‐effect analysis of GaN films grown by hydride vapor phase epitaxy” Appl. Phys. Lett., Vol. 72, No. 10, 9 March 1998
23. Goss et al. “Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces” Appl. Phys. Lett., Vol. 78, No. 23, 4 June 2001 24. Oh et al. “Optical properties of GaN grown by hydride vapor‐phase
epitaxy” Appl. Phys. Lett., Vol. 78, No. 3, 15 January 2001
25. Sung S. PARK et al.“Free‐standing GaN Substrates by Hydride Vapor Phase Epitaxy” ， Japan Journal of Applied Physics Vol.39 pp. L1141~L1142 (2000) 26. F. Yun et al. “Electrical, structural, and optical characterization of
freestanding GaN template grown by hydride vapor phase epitaxy” Solid‐
State Electronics 44 pp2225‐2232 (2000)
27. J.A. Freitas Jr. et al. “Structural and optical properties of thick freestanding
GaN templates” Journal of Crystal Growth 231 pp322–328 (2001)
28. Oila et al. “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” Appl. Phys. Lett., Vol. 82, No. 20, 19 May 2003 29. Jasinski et al. “Characterization of free‐standing hydride vapor phase
epitaxy GaN” Appl. Phys. Lett., Vol. 78, No. 16,pp2297~2299(2001)
30. M. Bockowski et al. “Directional crystallization of GaN on high‐pressure solution grown substrates by growth from solution and HVPE” Journal of Crystal Growth 246 (2002) 194–206
31. P.R. Hageman et al. “Thick GaN layers grown by hydride vapor‐phase epitaxy/hetero‐ versus homo‐epitaxy” Journal of Crystal Growth 255 (2003) 241–249
32. A. Trassoudaine et al. “Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas” Journal of Crystal Growth 260 (2004) 7–12
33. I. Nikitina et al. “Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE” Materials Science and Engineering B 61–62 (1999) 325–
329
34. J. Chaudhuri et al. “High quality GaN layers grown by hydride vapor phase epitaxy — a high resolution X‐ray diffractometry and synchrotron X‐ray topography study” Materials Science and Engineering B 78 (2000) 22–27 35. G. Nataf et al. “High quality ELO‐GaN layers on GaN.Al2O3 patterned
substrates by halide vapour phase epitaxy” Materials Science and Engineering B 59 (1999) 112–116
36. M. Leroux et al. “Luminescence and reflectivity studies of undoped, n‐ and p‐doped GaN on (0001) sapphire” Materials Science and Engineering B 50 (1997) 97–104
37. P. Gibart et al. ” Spatially resolved photoluminescence of laterally overgrown GaN” Journal of Crystal Growth 201/202 (1999) pp365‐370 38. Tavernier et al. ” Two‐step growth of high‐quality GaN by hydride vapor‐
phase epitaxy” Appl. Phys. Lett., Vol. 77, No. 12, 18 September 2000
83, No. 4, 28 July 2003
41. Detchprohm et al. “Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer” Appl. Phys. Lett., Vol. 61, No. 22, 30 November 1992
42. H. Sone et al. “Optical and Crystalline Properties of Epitaxial‐Lateral‐
Overgrown‐GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy”
Jpn. J. Appl. Phys., Vol.38, pp.L356~L359 (1999)
43. Yoshiaki Honda et al.”Crystal Orientation Fluctuation of Epitaxial‐Lateral‐
Overgrown GaN with W Mask Observed by Transmission Electron
Diffraction and X‐Ray Rocking curves” ， Japan Journal of Applied Physics Vol.38 pp. L1299~L1302 (1999)
44. H. Miyake et al. “Carrier‐gas dependence of ELO GaN grown by hydride VPE” Journal of Crystal Growth 237–239 (2002) 1055–1059
45. K. Motoki et al. “Preparation of Large Freestanding GaN Substartes by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate” Jpn. J.
Appl. Phys. Vol. 40 pp. L140–L143 (2001)
46. Y. OSHIMA et al. “Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void‐Assisted Separation” Jpn. J. Appl. Phys. Vol.
42 (2003) Pt. 2, No. 1A/B
47. Li, Bishop, and Coleman, “GaN epitaxial lateral overgrowth and optical characterization”, Appl. Phys. Lett., Vol. 73, No. 9,pp1179~1181(1998) 48. 趙偉清 “氫化物氣相磊晶法成長單晶氮化鎵＂ 國立交通大學電子物理所論
文，2002
49. Claudio R. Misky, et al. “Freestanding GaN‐substrate and devices”,phys.
stat. sol. (c) 0, No. 6 (2003)
50. D. F. Storm, et al “Growth and characterization of plasma‐assisted molecular beam epitaxial‐grown AlGaN/GaN heterostructures on free‐
standing hydride vapor phase epitaxy GaN substrates”, J. Vac. Sci. Technol.
B 23.3., May/Jun 2005
51. A.E. Nikolaev, et al. “GaN Layers Grown by HVPE on P‐type 6H‐SiC Substrates”, N. S. R. Vol 1, Art 45
52. 郭怡麟 “獨立式氮化鎵基板之研發＂ 國立交通大學電子物理所論文，2005