第四章 實驗結果與討論
4.3 共濺射離子源在不同條件下進行縱深分析結果比較
4.3.2 共濺射 O 2 + 離子源之電流密度對訊號的影響
於特定的加速電壓氧離子濺射下，當所使用的電流密度越高，表示入射至 PET 表面的氧離子量更多，將增加表面受氧化的程度，即形成並用來提供氫離子的 OH 基也將增多，預期可提升二次正離子訊號強度，如圖 48 與圖 49 分別是在電壓 200 V 與 250 V 的 O2+濺射下，比較電流密度 2×10-5 A/cm2、8×10-5 A/cm2與 32×10-5 A/cm2 的影響，可清楚看出 PET 特徵訊號大致上隨著電流密度的增加而提升，顯示在高 電流密度下，氧化表面的程度的確較高，有助於增益二次正離子訊號。
然而，如圖 50 當使用 500 V 的 O2+入射下，其結果則有別於使用低加速電壓 (200 與 250 V)下的結果，尤其是以 32×10-5 A/cm2的高電流密度 O2+濺射下，所造 成的二次離子訊號強度反而是最低，其因素是由於在高加速電壓且高電流密度的 形下，對於表面損傷機率較高，與其他共濺射條件(500V 2×10-5及 500V 8×10-5A/cm2) 做比較，使用 500 V 32×10-5 A/cm2 的 O2+其 eff、 d值是最大的，而ε值則是三者 中最小，所以當損傷迅速累積達飽和時，將難以及時移除，因此在此高電壓高電 流密度的共濺射條件下，訊號將無法大幅獲得增益的效果。
綜觀來說，各分子訊號對於實驗中所有共濺射條件而言，在濺射速率足以有 效移除濺射所造成的損傷下，隨著共濺射氧離子電流密度的增加，二次正離子增 益的效應將逐漸顯現出來。
72
73
2500+
sputtering 250 V 2 × 10
-5A/cm
2O
2+
cosputtering 250 V 8 × 10
-5A/cm
2O
2+
cosputtering 250 V 32 × 10
-5A/cm
2O
2+
cosputtering
N (X
i)/ N ( X
0)
74
75
76
深度解析度，造成界面擴張現象，尤其在緊密排列的有機元件之縱深分布分析中 將成為一限制因子，於本實驗中，比較發現使用低電壓 200 V O2+做共濺射時，所 量得的表面粗糙度是較低的。
77
Pristine surface
2.0Single Ar
2500+10kV 2×10
-6 203.6 60 3.4 36.478
79
圖 53. (a)濺射前及 (b)使用 10 kV 6×10-6 A/cm2Ar2500+一小時後的 PET 表面形貌
表 6. 以 10 kV 6×10-6 A/cm2 的 Ar2500+與不同條件下的 O2+共濺射一小時後的 PET 表面形貌，其掃描範圍均為 20×20μm。
2×10
-5A/cm
28×10
-5A/cm
232×10
-5A/cm
2200 V
250 V
500 V
O
2+加速電壓 O
2+電流密度
(a) (b)
80
81
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