二、 應力下 P 型鍺能帶的變化
3.4 實驗結果與討論
波數約 91cm-1的位置定為無應力時價帶頂端。在圖 3-11 中 60-110cm-1
預期。
應力增加而變大。圖 3-17 中 250cm-1-300cm-1的範圍有一吸收增強的
圖 3-8 T=10K，應力下鍺摻雜鎵之吸收頻譜量測圖，其應力(P)||[100]：
(1)0 (2)0.5 (3)1 (4)1.5 (5)2 (6)2.5 (7)3 (8) 3.5 (9)4 (10)4.5 (11)5Kbar。
圖 3-9 T=10K，P||[100]，D 吸收譜線峰值與應力大小關係
圖 3-10 應力下雜質能階隨應力變化示意圖
圖 3-11 T=10K，應力下鍺摻雜鎵之吸收頻譜量測圖，P||[100]： (1)0 (2)0.5 (3)1 (4)1.5 (5)2 (6)2.5 (7)3 (8)3.5 (9)4 (10)4.5 (11)5Kbar。
圖 3-12 T=10K ， P||[100] ， 應 力 下 鍺 摻 雜 鎵 之 吸 收 頻 譜 量 測 圖 (110cm-1-320cm-1)
圖 3-13 T=10K，P||[100]第一次應力下鍺摻雜鎵之吸收頻譜量測圖。
圖 3-14 T=10K，P||[100]第二次應力下鍺摻雜鎵之吸收頻譜量測圖。
圖 3-15 T=10K，應力下鍺摻雜鎵之吸收頻譜量測圖，P||[110]：(1)0 (2)0.5 (3)1 (4)1.5 (5)2 (6)2.5 (7)3 (8) 3.5 (9)4 (10)4.5 (11)5Kbar。
圖 3-16 T=10K，P||[110]，D 吸收譜線峰值與應力大小關係
圖 3-17 T=10K，應力下鍺摻雜鎵之吸收頻譜量測圖，P||[110]：(1)0 (2)0.5 (3)1 (4)1.5 (5)2 (6)2.5 (7)3 (8) 3.5 (9)4 (10)4.5 (11)5Kbar。
圖 3-18 T=10K ， P||[110] ， 應 力 下 鍺 摻 雜 鎵 之 吸 收 頻 譜 量 測 圖 (110cm-1-250cm-1)
圖 3-19 鍺於不同溫度下的吸收頻譜，實線為 7.5K，虛線為室溫。
Ref.[32] Fig.2。
圖 3-20 T=40K，應力下鍺摻雜鎵之吸收頻譜量測圖，P||[110]：(1)0 (2)0.5 (3)1 (4)1.5 (5)2 (6)2.5 (7)3 (8) 3.5 (9)4 (10)4.5 (11)5Kbar。
四、鍺摻雜鎵於應力下之電性量測
4-1 樣品準備與實驗步驟
本 實 驗 中 所 使 用 的 樣 品 為 鍺 摻 雜 鎵 之 塊 材 ， 其 阻 值 為
8-15Ω-cm。將其切割為尺寸為 5x10x1mm3的長方體小試片，長邊為 沿著[100]與[110]等晶向，其 5x10mm2之面為平行拋光。在長面的兩 端鍍上鋁當電極，兩電極相距 8mm。將樣品固定於同軸管底部，放
發態、(3)激發態的載子吸熱躍遷到價帶，如圖 4-3 所示。由理論計算 得知[33]，雜質基態的游離能隨應力增加成單調的下降，因此價帶內 自由載子的累積會隨著應力的上昇而增加，使得崩潰電壓隨應力上升 而下降。但由量測結果我們發現，在低應力時崩潰電壓會隨應力上升 而增加，當應力大於 0.5-1Kbar 時，崩潰電壓會隨著應力上升而下降。
由上一章的量測結果得知，在低應力時雜質基態的游離能下降較慢，
而激發態的游離能下降較快。造成低應力時雜質基態與激發態的能階 差較無應力時大，使得載子受激從雜質基態躍遷到激發態的機率降 低，使雜質激發態上載子的累積減少。間接造成載子由雜質激發態到 價帶的機率降低，使得游離到價帶的載子減少，造成崩潰電壓變大。
而在高應力時雜質激發態游離能下降趨勢漸漸平緩，基態的游離能繼 續下降，使得雜質激發態與基態間的能階差較無應力時小，載子從雜 質基態躍遷到激發態的機率變高。雜質激發態上載子的累積增加，使 得載子由雜質激發態到價帶的數量變多，因此崩潰電壓逐漸降低。
圖 4-1 T=10K，應力下鍺摻雜鎵之電流電壓關係圖，電場(E) ||P||[100]：(1)0 (2)0.5 (3)1 (4)1.5 (5)2 (6)2.5 (7)3 (8) 3.5 (9)4 (10)4.5 (11)5Kbar。
圖 4-2T=10K，應力下鍺摻雜鎵之電流電壓關係圖， E||P||[110]：(1)0 (2)0.5 (3)1 (4)1.5 (5)2 (6)2.5 (7)3 (8) 3.5 (9)4 (10)4.5 (11)5Kbar。
圖 4-3 載子於價帶、雜質激發態與基態間產生與複合示意圖。
五、結論
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簡歷
姓名：李志浩 性別：男
生日：民國 74 年 06 月 03 日
戶籍地：台北縣瑞芳鎮瑞竹路 36 巷 9 號 2 樓 電子信箱:[email protected]
學歷： 元智大學 電機工程學系 (92.9~96.6) 國立交通大學 電子工程所 (96.9~98.7)
碩士論文題目：
單軸應力下 P 型鍺之電性與兆赫波吸收頻譜之研究
Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress