• 沒有找到結果。

第五章 結論與未來展望

5.2 未來展望

在未來的工作中,可以在此系統中加入半導體的飽和吸收體,利 用其特性降低橫向模態的耦合,期望達成完美的連續性的自鎖模輸 出。在近期發表的論文當中,也發現有人利用半導體的飽和吸收體並 且以架設 V 型共振腔的型式,成功的將光激發式的半導體雷射產生鎖 模現象,並且將雷射的脈衝寬度壓縮至 60 飛秒(femtosecond)。因為半 導體增射介質被激發時含有大範圍的螢光光譜,因此我們認為如果可 以將這些模態都加以控制而產生鎖模現象,應該可以將脈衝的寬度壓 縮至飛秒雷射的等級。

而研究的另一個方向則是可以利用雙折射濾光 鏡(birefringence filter)架設在雷射共振腔的中間,並且利用溫度的調控,控制雙折射濾 光鏡過濾的波長,將大範圍的螢光光譜縮小,只留下特定的波長通過,

在螢光光譜縮小的狀況下,就有機會消除高階橫模的耦合進而產生良 好連續輸出的自鎖模雷射。

參考文獻

[1] M.Kuzetsov, F. Hakimi, R.Sprague, A. Mooradian,”Design and Characteristics of high-power(>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 Beams.” IEEE J.Sel. Top. Quanutm Electron. 5, 561, (1999)

[2] M.Kuzetsov, F. Hakimi, R.Sprague, A. Mooradian, “High power(>0.5W CW ) Diode pumped vertical external cavity surface emitting semiconductor laser with circular TEM00 Beam .” IEEE Photonics Tech Lett. 9, 1064 (1997)

[3] A.C. Tropper, H.D. Foreman, A.Granache, K.G. Wilcox and S.

Hoogland, “Vertical-external-cavity semiconductor lasers.” J Phys D

37, 75, (2004)

[4] U. Keller, A.C. Tropper, “Passively mode-locked surface-emitting semiconductor lasers.” Phys. report 429, 67 (2006)

[5] A.C. Tropper and Hoogland, “Extended cavity surface-emitting semiconductor lasers.” Prog. Quantum. Electron. 30, 1 (2006)

[6] M.Y.A. Raja, S.R.J Brueck, M Osinski, CF Schaus et al, “Resonant periodic gain surface-emitting semiconductor lasers”., IEEE J.

Quantum Electron. 25, 1500 (1989)

[7] Li Fan, J Hader, M Schillgalies, M Fallahi, .R. Zakharian J.V.

Moloney R. Bedford J.T. Murray S.W. Koch W. Stolz, “High-power optically pumped VECSEL using a double-well resonant periodic

[8] A.Bousseksou, S. Bouchoule, M. Kurdi .etc “Fabrication and characterization of 1.55μm single tranverse mode large diameter electrically pumped VECSEL” Opt Quantum Electronic. 38, 1269 (2006)

[9] A. Garnache, A. A. Kachanov, F. Stoeckel, and R. Houdré,

"Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy," J. Opt. Soc. Am. B 17, 1589 (2000)

[10]G. B. Kim, J.Y. Kim, J. Lee, J. Yoo, K.S. Kim, S.M. Lee, S. Cho, S.J.

Lim, T. Kim, and Y. Park, “End-pumped green and blue vertical external cavity surface emitting laser devices .” Appl. Phys. Lett. 89, 181106 (2006)

[11] J.E. Hastie, L.G. Morton, A.J. Kemp, and M.D. Dawson, A.B. Krysa and J.S. Roberts, “Tunable ultraviolet output from an intra-cavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006)

[12] J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, "2.7 W tunable orange-red GaInNAs semiconductor disk laser," Opt. Express 15, 18345 (2007)

[13] M. Fallahi, L. Fan, Y. Kaneda, C. J. Hader, H. Li, J. V. Moloney, B.

Kunert, W. Stolz, S. Koch, J. Murray, R. Bedford, “5 W yellow laser by intra-cavity frequency doubling of high-power vertical external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.

20, 1700 (2008)

[14] Hans Lindberg, Anders Larsson, and Martin Strassner,

"Single-frequency operation of a high-power, long-wavelength semiconductor disk laser," Opt. Lett. 30, 2260 (2005)

[15] Peter Klopp, Florian Saas, Martin Zorn, Markus Weyers, and Uwe Griebner, "290-fs pulses from a semiconductor disk laser," Opt.

Express 16, 5770 (2008)

[16] A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, "2.1-W picosecond passively mode-locked external-cavity semiconductor laser," Opt. Lett. 30, 272 (2005)

[17] O. Casel, D. Woll, M.A. Tremont, H. Fuchs, R.Wallenstein, E.

Gerster, P. Unger, M. Zorn and M. Weyers, “Blue 489-nm

picosecond pulses generated by intra-cavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser”

Appl. Phys. B 81, 443 (2005)

[18] A. J. Kemp, G. J. Valentine, J.M. Hopkins, J. E. Hastie, S. A. Smith,

S. Calvez, M. D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heat-spreader approach," IEEE J. Quantum Electron. 41, 148 (2005).

[19] R. G. Bedforda, M. Kolesikb, J. L. A. Chillac, M. K. Reedc, T. R.

Nelsona, J. V. Moloney, “Power-limiting mechanisms in VECSELs,”

Proc. of SPIE. 5814, 199 (2005)

[20]

A. J. Kemp, A.J. Maclean, J. E. Hastie, S. A. Smith, J.M. Hopkins,

S. Calvez, G. J. Valentine, M. D. Dawson and D. Burns, “ Thermal

lensing, thermal management and transverse mode control in

microchip VECSELs.” Appl. Phys. B 83, 189 (2006)

[21] H. Lindberg, M.Strassner, J. Bengtsson and A. Larsson, “InP -based optically pumped VECSEL operating CW at 1550nm,” IEEE Photon Technol. Lett, 16, 362 (2004).

[22] Nils Hempler, John-Mark Hopkins, Alan J. Kemp, Nico Schulz, Marcel Rattunde, Joachim Wagner, Martin D. Dawson, and David Burns, "Pulsed pumping of semiconductor disk lasers," Opt. Express

15, 3247 (2007)

[23] B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A. -R.

Bellancourt, E. Gini, T. Südmeyer, and U. Keller, "Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,"

Opt. Lett. 33, 2719 (2008)

[24] A.R. Zakharian, J. Hader, J.V. Moloney, S.W. Koch, and S. Lutgen ,

“Experimental and theoretical analysis of optically pumped semiconductor disk lases,” Appl. Phys. Lett. 83, 1313 (2003)

[25] H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson,

“Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Topics Quantum Electron. 11, 1126 (2005)

[26]J. P. Tourrenc, S. Bouchoule, A. Khadour, J. Decobert, A. Miard, J. C.

Harmand, and J. L. Oudar, "High-Power RT CW Operation of an OP-VECSEL at 1.56 µ m with Hybrid Metallic-Metamorphic Mirrors," in CLEO/Europe and IQEC 2007 Conference Digest, paper CB1_3. (Optical Society of America, 2007)

[27] Jussi Rautiainen, Jari Lyytikäinen, Alexei Sirbu, Alexandru Mereuta,

Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov, "2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion," Opt. Express 16, 21881 (2008)

[28] Jari Lyytikäinen, Jussi Rautiainen, Lauri Toikkanen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G.

Okhotnikov, "1.3-µ m optically-pumped semiconductor disk laser by wafer fusion," Opt. Express 17, 9047 (2009)

[29] H. C .Liang, Y. J. Huang, W. C. Huang, K, W. Su, and Y. F. Chen,

“High –power, diode-end-pumped, multigigahertz self-mode-locked Nd:YVO4 laser at 1342nm,” Opt. Lett. 35, 4 (2010)

[30] H. C. Liang, Y. J. Huang, Y. C. Lin, T. H. Lu, Y. F. Chen, and K. F.

Huang, “Picosecond optical vortex converted from multigigahertz self-mode-locked high-order Hermite-Gaussian Nd:GdVO4 laser”

Opt. Lett. 34, 3842 (2009)

[31] H. C. Liang, H. L. Chang, W. C. Huang, K. W. Su, Y. F. Chen and Y.

T. Chen, “Self-mode-locked Nd:GDVO4 laser with multi-GHz oscillations: manifestation of third-order nonlinearity,” Appl. Phys. B

97, 451 (2009)

[32] H. C. Liang, Ross C. C. Chen, Y. J. Huang, K. W. Su, and Y. F. Chen,

“Compact efficient multi-GHz Kerr-lens mode-locked diode-pumped Nd:YVO4 laser,” Opt. Express 16, 21149 (2008)

[33] Y. F. Chen, T. M. Huang, C. F. Kao, C. L. Wang, and S. C. Wang,

“Generation of Hermite-Gaussian modes in fiber-coupled laser-diode end-pumped lasers,” IEEE J. Quantum Electron. 33, 1025 (1997) [34] H. Laabs and B. Ozygus, “Excitation of Hermite Gaussian modes in

end-pumped solid-state lasers via off-axis pumping,” Opt. Laser Technol. 28, 213 (1996)

相關文件