第四章 第四章 未來工作 未來工作 未來工作 未來工作
從本研究已經證明經過捉聚步驟減少鎳污染的確可以降低漏電流，若 能成功結合過濾基板與捉聚步驟，改善其表面粗糙度，可望在電性上能有 更優異的提升。而在結晶性方面，可在捉聚步驟前先將複晶矽薄膜退火至 完全結晶，可以消彌捉聚前後的電子遷移率差異。而捉聚步驟還可以應用 在結合其他結晶方式，如MILC+Gettering+ELA，可望能開發出表現更突出 的薄膜電晶體。
對於臨界電壓以及次臨界斜率較大方面可以利用電漿護佈(Passivation) 改善，而改良捉聚方式如沉積其他材料於複晶矽薄膜來取代晶圓接合，相 信可將捉聚的技術應用於量產上，將MILC 的方法製作大尺寸之 LTPS 面板。
第五章 第五章 第五章
第五章 參考文獻 參考文獻 參考文獻 參考文獻
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