以實驗中採用薄晶圓以及網格狀結構的方式，雖然可以大大提高接合 成功率，但是鍺晶片容易產生微小的裂痕，並在後續研磨拋光時擴大，所 以勢必要使用新的方式來避免鍺的龜裂。
介面非晶質結構利用 EDX 作測定其實不太準確，第一很難保證試片 沒有被空氣顆粒汙染，第二對於輕元素的分析能力低。在這種半定性也無 法定量的情況下，EDX 其實只能當作參考，未來如果要做準確定性甚至是 定量，EELS 和 SIMS 一定是不可或缺的。
在電性量測方面，由於是使用塊材接合，單個量測的二極體大小是 1mm×1mm，不容易定義出電流路徑，也不清楚微結構下所觀察到的現象 是否對於電性結果有足夠的影響力。如果能利用黃光微影製作出更小的量 測單位，一定會得到更準確的電流電壓圖，有利於剖析介面電流傳輸機制。
在漏電流方面，如果能夠去除晶圓之間的晶向偏離，使得介面非晶質 層消失，達到完美接合，漏電流就會有效地降低。
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