未來展望

在中長程光纖通訊元件光源材料選擇上大多採用InGaAsP ，但 此材料對熱敏感度非常大，使得在操作上時必須有散熱裝置來為維持 其穩定性而造成增加封裝製程成本。近幾年來InGaAsN與AlGaInAs 兩種材料系統被發現具有更多的優勢後，吸引更多學術研究單位投注 在這兩大材料上的研發；尤其InGaAsN 以具有相當大的band offset ratio(△E : △Ec v = 7：3 到 6：4)取勝，因此在摻入銻後也能成功的將 波長拉至 1300 nm以上，並且對熱的敏感度低和電子溢流的情況有很 大的改善，其電子與重電洞有效質量特性也很適合發展成光圓點、體 積小的面射型雷射(VCSEL)之優勢，再加上其基板為價格便宜的GaAs 更能夠降低成本，因此發展前景相當看好。InGaAsNSb 是近年來發 展的新材料，有許多特殊的物理特性長晶技術也還不夠純熟，未來需 要產學界努力使其早日走向量產商品化的階段。

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