五、 結論
5.2 未來工作
在TSMC 0.35μm 標準CMOS 製程中，可成功製做出所設計元件，其 元件尺寸均與設計相符，但製程所產生之殘餘應力，對於元件作動的性能 有不小的影響，在無法更改製程內容的情況，如何將殘餘應力產生的結構 變形降低，使作動結果更符合設計之預期，將是未來要解決的目標。
另外由於製程最後用於掏空基材之溶液，對結構邊緣均有侵蝕現象，
造成部分結構較易斷裂，在未來的下線設計時，應考量此問題並在晶片規 畫時避開，以避免同樣情況再次產生。
為了確實量測壓阻材料所感測的訊號，未來將與 IC 電路作結合，並將 結構加以持續改良，使量測訊號更為明顯，以利於將來元件產品化。
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