本論文藉由光性及電性量測，比較 InAsN/InGaAs quantum dot-in-a-well (DWELL) 結構經熱退火後的差異。DWELL 結構可以減緩應力對量子點的影響，
在許多研究中[23,28,44]，皆發現在量子點結構上在蓋上一層 capping layer 可增加其 發光效率對於波長的延展也有一定效果。而在三五族合金中摻雜氮，更是可以得 到明顯的波長紅移現象，不過隨著摻雜含量的提高，會出現相分離的現象[45]， 讓原子在樣品內呈不均勻，所以高含量的氮摻雜樣品，其發光效率很差[24]，我 們的樣品中就可以看到這一現象，且也存在著一個低能量訊號 ( localized states ) 這是由於氮的群聚所造成[24,35]；在 InAsN/InGaAs 中，因為存在著侷限載子的能 階，載子被空乏，這讓載子的放射時間變長，所以我們可以看到頻率響應的現象 發生，並且可以對量子結構進行電性分析。
比較樣品經熱退火過程前後的差異，可以看到量子訊號增強，發光效率變好，
半高寬明顯變窄，低能量訊號變弱，這是因為熱退火過程使原子重新分佈[23,33,38]， 鍵結改變，也讓氮均勻的分佈在各個量子點中，還有一些由氮所造成的點缺陷也 降低。
而電性在熱退火過程前後的差異，最明顯的地方在於，不論是量子點或是深 層缺陷的電子放射速度階變快，速度差易約有兩到三個數量級之多，且可以在 C-V 圖看見兩個頻率響應的平台，在 RTA 的樣品中更可見到量子穿隧效應。這 是因為熱退火讓 localized states 的量降低，在空間上分佈變少，背景濃度得以恢 復。
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