1.藉由光激螢光的量測我們得知 AAO 的發光波段位於 419nm，並且 透過穿透的量測得知 AAO 在 400nm 以下，穿透性即大幅衰減。另 外我們由 XRD 光譜圖得知，AAO 經過長時間的陽及氧化處理以及 回火過後，都會變成結晶態γ-Al2O3。
2.將陽極氧化處理時間加長，製作出規則排列的 AAO，並且對於 AAO 的 Interpore distance(a)與電壓(v)做圖，得到一關係式:
a = 15.4+2.63×v。
3.使用高濃度的磷酸硫酸混合液，藉由施加不同的電壓與溫度，看到 AAO 的變化，同時也看到了 pre-sites 的形成，最後得到規則排列 的陽極氧化鋁孔洞。
4.以 AAO 當作 mask 在製程技術上的運用部份，我們分別製作出金屬 奈米點，奈米點的直徑大約為 80nm，並且利用不同深寬比的 AAO，
觀察到奈米點的形狀會隨著 AAO 深寬比有所改變，以及分別利用 RIE 與 ICP-RIE 來蝕刻矽基板與 GaAs 基板，將 AAO 圖案轉移至矽 基板與 GaAs 基板。
5.我們從 PL 量測結果發現貼過 AAO 後的磊晶結構，AAO slabs 會大 大的增加量子點磊晶結構 light extraction，並且可以控制 PL 發光波 段。這現象和發光層與 AAO 間的距離有相當大的關係。
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