基因演算法製程中還需要在電子束顯影時之 dose time 校正、lift off 製程中 使用較緩和方式掀離光阻等方式改善，以得到 40-nm 線寬均勻呈現，以及光柵針 對側壁 85°設計優化後，達到改善折射率匹配液在光柵邊緣之損耗。
綜合以上論述，將半導體雷射陣列縮短，其優點有(1)降低第二次繞射損耗、
(2)提升慢軸方向容忍度、(3)電子束顯影時間減少，我們可以進而利用基因演算 法，設定不同的適應函數，來針對於第二次繞射效應與慢軸容忍度設計光柵，再 將耦光效率提升，達到系統簡潔及高亮度輸出之特性，提高實際應用之可能性。
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