區間，穩定相藉由擴散的方式，逐漸由δ-Ni2Si 轉變為 NiSi (orthorhombic)。隨後，
在試片表面反應鎳金屬層厚度不足的地方，由 Si(111)上反應成長出 hexagonal 結 構之 NiSi 薄膜與團塊，並在特定的腔體壓力範圍下(9-12torr)，Ni 擴散進入該團 塊或薄膜，與 NiSi 進行反應形成 Ni2Si 晶粒並達到過飽和析出，自催化成長出良
4-2 未來展望
延伸本研究，藉由改變前驅物含量或者實驗參數製備出鎳矽化物其餘各種穩 定相如電阻率目前已知最低的 NiSi 與其他相如 Ni5Si2和 Ni3Si2等。並探討磁性 與場發射等性質方面，是否優於本研究中所探討的三相。
近年來，三元以上穩定存在的奈米線如 Fe1-xCoxSi 已被發現具有相當高的巨 磁阻效應[19]。此外，矽化鈷奈米線中摻雜鍺金屬摻雜濃度改變對磁性的影響也 被開發與探討[50]。因此，嘗試在鎳矽化物當中摻雜其餘帶磁性之元素如 Fe、Co 與 Ge 等，並改變其前驅物混合比例，以達到不同摻雜濃度並針對其磁性與電性 改變，作深入的探討。此外，同軸成長(co-axial)與核心-外層(core-shell)不同元素 或者相的奈米結構，也是近年來興起的熱門奈米材料[51]。單一奈米線包含多種 不同相所組成也已經被研究與開發。如果能由相對的簡易製程例如 CVD 成功製 備，勢必將提升該異相結構之應用的廣度與深度。
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