第五章
第五章 第五章 結論 結論 結論 結論
本研究以RF磁控濺鍍沉積氧化鋅鎵(GZO)薄膜於PET 上，以田口實驗 設計配合灰關聯分析，探討製程參數及再線性對GZO薄膜光電性質的影 響，茲將本文結論歸納如下：
1. 經由田口實驗之變異數分析後可得知，射頻功率為影響薄膜沉積速率 及電阻率的主要因子；隨著射頻功率的提升，靶材上被濺射出的粒子 有更大的動能向基板移動，當粒子到達基板表面時，也有足夠的能量 進行擴散使其再結合，形成較大的晶粒，電子只需通過較少的阻礙來 進行傳遞。此外，影響薄膜透光率的主要因子為濺鍍壓力，當濺鍍壓 力在7.5 mTorr時，光穿透率能夠達到最佳的狀態。
2. 由灰關聯理論分析，經實驗應証，求得本系統多重品質特性最佳鍍膜 參數，其水準組合為 : 射頻功率 50 W、濺鍍壓力 7.5 mTorr、濺鍍溫 度 50 ℃、沉積時間 60 min，所獲得的沉積速率為5.12 nm/min、電阻 率為5.5×10-3 Ω‧cm、表面粗糙度為0.529 nm及可見光穿透率約為83
%。
3. 在改變單一鍍膜參數下，不論是改變瓦數或是改變壓力，其電阻率及 光穿透率，皆比灰關聯鍍膜參數組合要來的差，故再次驗證灰關聯鍍 膜參數組合是本次實驗參數設置中之最佳鍍膜參數。
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