加非離子型界面活性劑 BR-1、BR-2 及 Triton-X，對於蝕刻速率有提升，但 孔壁形貌會形成多孔矽；添加陰離子型界面活性劑 1 wt.% MA、強氧化劑 2.5
70 µm/hr、74 µm/hr 及 58 µm/hr。在孔壁粗糙度方面，發現僅有同時添加 2.5
Alcohol，穿孔時間最快約為 16.7 hr，且孔洞形貌有極佳的表面粗糙度。電化 學蝕刻之孔徑最小約為 21 µm，蝕刻孔洞之深寬比最大約為 17.7。
第六章 未來展望
能將此技術應用於太陽能電池之抗反射層製作，預期將有機會大幅提升太陽 能電池之轉換效率，以利太陽能電池的普及化。
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晶圓穿孔陣列之光輔助電化學蝕刻特性研究
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