呈現多而密的波峰突起，波峰底寬約為30~160nm，高低落差約 23nm。以溶膠-凝 膠法製備之 AZO 薄膜的大島狀底寬約為 250nm，高低落差約 8nm，使得粗化後
可明顯看出以溶 合氣體熱處理後，鋅原
參考文獻
Applied Physics 104, 013701 pp.1-12
G. Saraf, , J. Zhong Lu, The Journal of
[3] T. Mitsuyu, S. Ono, K. Wasa, Jou
[1] S. Hirose, Y. Yamamoto, and H. Niimi, Journal of (2008)
[2] Y. Chen, P. I Reyes, Z. Duan , Y. Vacuum Science and Technology B 27(3), pp.1631-1634 (2009)
rnal of Applied Physics 51, pp.2464-2470 (1980)
[4] rs 12(2), pp.17-19 (2009)
[7] Y. Tang, L. Luo, Z. Chen, Y. Jiang, B. Li, Z. Jia, L. Xu, Electrochemistry Communications 9, pp. 289-292 (2007)
[8] T. Tohsophon, J. Hüpkes, S. Calnan, W. Reetz, B. Rech, W. Beyer, N. Sirikulrat, Thin Solid Films 511, pp. 673-677 (2006)
[9] Z.Z. Zhang, Z.P. Wei, Y M. Lu, D.Z. Shen, B. Yao, B.H. Li, D.X. Zhao, J.Y. Zhang, X.W.
Fan, Z.K. Tang, Journal of Crystal Growth 301, pp.362-365 (2007)
[10] S.H. Hwang, T.H. Chung, B.T. Lee, Materials Science and Engineering: B 157, pp.32-35 (2009)
[11] D. Li, H. Haneda, Chemosphere 51, pp.129-137 (2003)
[12] R. F. Silva, M E. D. Zaniquelli, Colloids and Surfaces A: Physicochemical and S.K Kim, J.Y. Son, Electrochemical and Solid-State Lette
[5] K.Y. Jung, Y.C. Kang, S.B. Park, Journal of Materials Science Letters 16, pp.1848-1849 (1997).
[6] 蔡佳銘, 國立中央大學化學工程與材料工程研究所碩士論文(2005)
.
[13] Z. Dang, L. Fan, S. Zhao, C. Nan, h Bulletin 38, pp.499-507 (2003)
[15] Applied Surface Science 253, pp.3727-3730 (2007)
[19] X.T W. Tan, K.S. Ong, F. Zhu, Journal of Crystal Growth 287, pp. 44-47 (2006) , A. Nemeth, G. Radnoczi, Z. Czigany, M. Fried, Z. Labadi, I. Barsony, Applied
[21] , B. J. Kniknie, C. I. M. A. Spee, and M. C. M. van de Sanden,
[22] C. Lai, C. J. Tun, J. K. Sheu, G. C. Chi,
[23] Y.Z. Zhang, J.G. Lu, Z.Z. Ye, H.P. He, L.P. Zhu, B.H. Zhao, L. Wang, Applied Surface
[24] Y. Sato, K. Yanagisawa, N. Oka, S. Nakamura, Y. Shigesato, The Journal of Vacuum
[26] J.P. Lin, J.M. Wu, Applied Physics Letters 92 134103, pp.1-3 (2008) Materials Researc
[14] D. Chen, X. Jiao, G..Cheng, Solid State Communications 113, pp. 363-366 (2000) Y. Liu, J. Lian,
[16] A. E. J.Gonzalez, J. A. S. Urueta, R. S. Parra, Journal of Crystal Growth 192, pp.
430-438 (1998)
[17] P. Sagar, M. Kumar, R.M. Mehra, Thin Solid Films 489, pp.94-98 (2005)
[18] V. Shelke, B.K. Sonawane, M.P. Bhole, D.S. Patil, Journal of Non-Crystalline Solids 355, pp. 840-843 (2009)
. Hao, L.
[20] C. Major
Surface Science 255, pp. 8907-8912 (2009) I. Volintiru, M. Creatore
Journal of Applied Physics 102, 043709, pp.1-9 (2007) C. H. Kuo, C. L. Yeh, P. H. Chen, W.
Electrochemical and Solid-State Letters 11, pp.269-271 (2008)
Science 254, pp. 1993-1996 (2008)
Science and Technology A 27, pp.1166-1171 (2009)
[25] J.P. Lin, S.W. Chen, J.M. Wu, Electrochemical and Solid-State Letters 12, pp.1-4 (2009)
[27] S.H. Yi, S.K.Choi, J.M. Jang, J.A.Kim, W.G. Jung, Proceedings of the SPIE 6831 68311A , pp.1-7 (2007)
[28] M. Shahjahan, M. K. R. Khan, M. F. Hossain, S. Biswas, and T. Takahashi, The Journal of Vacuum Science and Technology A 27, pp.885-888 (2009)
[29] Basnet, Proceedings of the SPIE 6793, 67930I ,pp.1-6 (2008)
Solar Energy Materials and Solar Cells 93, pp. 1356-1365 (2009)
[31] , Material Science and Engineering B97,pp.68-73 (2003)
J. B. Halpern, M. G. Spencer, Y.X. Li, L.G. Salamanca-Riba, A. A. Iliadis, K. A. Jones,
[33] S. J. Pearton, D. P. Norton, K. IP, Y. W. Heo, T. Steiner, Superlattices and Microstructure 34, pp.3-32 (2003)
[34] K. E. Lee, M. Wang, E. J. Kim, S. H. Hahn, Current Applied Physics 9, pp. 683-687 (2009)
[35] Y
[36] Y V R.
S. P. Shrestha, P.
[30] M. Gabás, N.T. Barrett, J.R. Ramos-Barrado, S. Gota, T.C. Rojas, M.C. L.Escalante,
R. O. Ndong, F. P. Delannoy
[32] R. D. Vispute, V. Talyansky , S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang,
Applied Physics Letters 73,pp.348-350 (1998)
. Yamamoto, K. Saito, K. Takahashi, M. Konagai, Solar Energy Materials and Solar Cells 65, pp.125-132 (2001)
. Liu, J. Lian, Applied Surface Science 253, pp. 3727-3730 (2007)
[37] . Khranovskyy, U. Grossner, O. Nilsen, V. Lazorenko, G.V. Lashkarev, B.G. Svensson, Yakimova, Thin Solid Films 515, pp. 472-476 (2006)
[39] 溫文杰, 大同大學材料科學研究所碩士論文 pp.10-35 (2007) . D. Mahan, Journal of Applied Physics 54, pp.3825-3832 (1983).
[40] G
[42] T. Minami, H. Sato, H. Nanto, S. Takata, Japanese Journal of Applied Physics 24, pp.781-784 (1985)
[43] A. C. S.
V.
Technology 180, pp.659-662 (2004)
[46] C. T. Brinker, G. W. Scherer, Sol-Gel Science：The Physics and Chemistry of Sol-Gel Processing, Academic Pres Inc,pp.1-14 (1990)
[48] onado, M.L.Olvera, Materials Letters 61, pp1460-1464
[49] rnes, K. J. Klabunde, Journal of Molecular Catalysis A: Chemical 194,
[50] 光電系碩士論文,pp.45-47(2007)
2007) [52] X. Li, G. He, G. Xiao, H. Liu, M. Wang, Journal of Colloid and Interface Science 333, pp.
465-473 (2009)
[53] B.L.Cushing, V. L. Kolesnichenko, C. J. Connor, Chemical Reviews 104, pp.
[41] O. Hamad, G. Braunstein, H. Patil, N. Dhere, Thin Solid Films 489, pp.303-309 (2005).
Sabioni, Solid State Ionic 170, pp.145-148 (2004).
[44] M., B. Teixeira, E. Fortunato, R. C. C. Monteiro, P. Vilarinho, Surface and Coatings
[45] 陳秀連, 國立台灣科技大學材料科技研究所碩士論文, pp171-178 (2003)
[47] K.R. Murali, Journal of Physics and Chemistry of Solids 68, pp.2293-2296 (2007) H.G.Pozos, A.Mald
(2007) C. L. Ca
pp.227-236 (2003)
張倍榕, 國立台北科技大學
[51] H. Zhou, D.Yi, Z.Yu, L.Xiao, J. Li, Thin Solid Films 515 , pp.6909–6914 (
3893-3899 (2004)
[54] H. Schmidt, M. Mennig, INM, Institut für Neue Materialien, Saarbrücken, Germany
[55] G. G. Valle, P. Hammer, S. H. Pulcinelli, C. V. Santilli, Journal of the European Ceramic
07) ane, M.P. Bhole, D.S. Patil, Journal of Non-Crystalline Solids 355,pp. 840-843 (2009)
onal Nanoelectronics
[59] C.Y. Zhang, Journal of Crystal Growth 280,
[61] idayat et al, Materials Science and
[62] G. K. Bhaumik, A. K. Nath, S. Basu, Materials Science and Engineering B 52, (1998)
[63] J. C. Viguie,J. Spitz, The Journal of The Electrochemical Society 722, pp.585-588
[65] J. Hirunlabh, S. Suthateeranet, K. Kirtikara and Ralph D. Pynn: The Thammasat November, pp1-4 (2000)
Society 24, pp.1009-1013 (2004)
[56] G. Srinivasan, R.T. Rajendra Kumar, J. Kumar, Optical Materials 30, pp.314-317 (20 [57] V. Shelke, B.K. Sonaw
[58] J.Chen,W.Lei,C.Li, X. Zhang, 2008 IEEE Internati Conference (2008)
J.L.Zhao, X.M.Li, J.M.Bian,W.D.Yu, pp495-501 (2005)
[60] S. P. Shrestha, P. Basnet, Proceedings of SPIE 6793, pp.1-6 (2008) D. Hidayat, T. Ogi, F. Iskandar, K. Okuyama, D. H
Engineering B, pp.1-7 (2008)
pp.25-31
( 1975 )
[64] A. A.Ahrnadi, College of Engineering and Technology Ohio University In Partial Fulfillment of the Requirement for Degree Master of Science, pp.15-18 (2003)
International Journal of Science and Technology 3, pp.10-20 (1998)
[67] B. Ergin, E. Ketenci, F. Atay, The International Journal of Hydrogen Energy 34, pp.
5249–5254 (2009)
[68] X.Zhang, H. Fan, J. Sun, Y. Zhao, Thin Solid Films 515, pp. 8789–8792 (2007) [69] J.H. Lee, B.O. Park, Materials Science and Engineering B 106, pp. 242–245 (2004) [70] B. Sapoval and C. Hermann: Physics of Semiconductors ,Springer, New York, 2,
p.44-46. (2003)
[71] D.K.Schroder:Semiconductor Material and Device Characterization, Wiley-Interscience IEEE, New York, pp.101 (2006)
[73] h gov/812/effe.htm
S, INC.
[76] C.A.Pa York, pp.1-7 (1968)
[77] D. K. Schroder: Semiconductor Material and Device Characterization,
[78] H. Seiler: Journal of Applied Physics 54, pp.1-18 (1983)
Quate, and C. Gerber, Physical Review Letters 56, pp. 930-933 (1986) [81] K. E. Lee, M. Wang, E. J. Kim, S. H. Hahn, Current Applied Physics 9, pp. 683–687
[82] K.C. Pa
,
1460-1464 (2007)
[72] L.J. van der Pauw, Philips Research Reports 20, pp.220-224 (1958).
ttp://www.eeel.nist.
[74] Optical Semiconductor Devices, Mitsuo Fukuda, JOHN WILEY & SON
[75]D. A. Skoog and J. J. Leary, Principles of Instrumental Analysis 4th Ed, (1992) rker et al, Photoluminescence of Solutions, Elsevier New
Wiley-Interscience IEEE, New York, pp.631 (2006)
[79]黃永盛, 科儀新知雙月刊, 第17卷第3期, pp.36–54 (1995) [80] G. Binning, C.F.
(2009)
rk, D.Y. Ma, K.H. Kim, Thin Solid Films 305, pp.201-209 (1997) [83] M. J. Alam, D.C. Cameron, The Journal of Vacuum Science and Technology A 19
pp.1642-1646 (2001).
[84] H. Gomez-Pozos, A. Maldonado, M. de la L. Olvera, Materials Letters 61, pp.
[85] Z.Q. Xu, H. Deng, Y. Li, Q.H. Guo, Y.R. Li, Materials Research Bulletin 41, pp.
[90] M. Liu, Journal of Crystal Growth 311, pp.
tor Physics and Applications, Oxford Univ Pr pp.
es 5-6,
pp. 201–204 (
-1~143103-3 (2008) 7 , pp.775-782 (1954)
[97] K. Lin, P. Tsai, Materials Science and Engineering B 139, pp. 81–87 (2007)
.G. Zheng, M. Y. Chen, X. Xiang, Physica B, pp. 201–204 [86] K. M. Lin, P. Tsai, Thin Solid Films 515, pp. 8601-8604 (2007)
Materials Letters 61, pp. 1118–1121 (2007)
[88] X. Z. Qiang, D, Hong, L. Yan, C. Hang, Materials Science in Semiconductor Proce 9 , pp.132-135 (2
[89] J. P. Lin, J. M. Wu, Applied Physics Letters 92, 134103, pp.1-3 (2008) J. Wang, L. Meng, Y. Qi, M. Li, G. Shi,
2305-2308 (2009)
[91] M. Balkanski, R. F. Wallis, Semiconduc 241-242 (2000)
[92] H. Kwak, M. L. Tiago, J. R. Chelikowsky, Solid State Communications 145, Issu pp. 227-230(2008)
[93] S. W. Xue, X. T. Zu, W. G. Zheng, M. Y. Chen, X. Xiang, Physica B 382 2006)
[94] J. P. Lin, J. M. Wu, Applied Physics Letters 92, pp. 134103 [95] T. S. Moss, Proceedings of the Physical Society of London B 6
[96] G.G. Valle, P. Hammer, S.H. Pulcinelli, C.V. Santilli, Journal of the European Ceramic Society 24, pp. 1009–1013 (2004).
[98] K. Lin, P. Tsai, Thin Solid Films 515 , pp. 8601–8604 (2007)
[99] S. Mridha, D. Basak, Chemical Physics Letters 427, pp. 62–66 (2006) [100] S. W. Xue, X. T. Zu, W
[102 , W.P. Tai, Applied Surface Science 253, pp. 4911–4916 (2007)
, pp. 6909–6914(2007)
[105 台灣金屬熱處理學會年會論文 (2006)
[109] , Journal of the European Ceramic Society 24, pp. 1869-1872.
ark, Materials Science and Engineering B 106, pp. 242–245 (2004)
aracterization 58, pp. 708–714 (2007)
n, ials Science in Semiconductor Processing 2 , pp. 45-55(1999)
5, pp. [104] B.Y. Oh, Journal of Crystal Growth 281, pp.475-480 (2005)
] 李孟賢, 林天財, 劉定杰, 劉時郡, 張慎周,
[106] H.G..Pozos, A. Maldonado, M. D. Olvera, Materials Letters 61, pp. 1460–1464 (2007)
[107] 吳坤陽,國立成功大學化學工程學系碩博士班, pp.65-103 (2005)
[108] R. Sharma, K. Sehrawat , R. M. Mehra, Current Applied Physics, pp.1-7(2009) F. K. Shan, Y. S. Yu
(2004)
[110] J.H. Lee, B.O. P
[111] H. Gomez, A. Maldonado, R. Castanedo-Perez, G. Torres-Delgado, M. De la L.
Olvera, Materials Ch
[112] W. T. Seeber, M. O. Abou-Helal, S. Barth, D. Beil, T. Höche, H. H. Afify, S.E.Demia Mater
[113] B.Joseph, P.K. Manoj, V.K. Vaidyan, Ceramics International, Volume 32, Issue 487-493 (2006)
[114] M. Wang, K. E. Lee, S. H. Hahn, E. J. Kim, S. Kim, J. S. Chung, E. W. Shin, C. Park, Materials Letters 61, pp. 1118–1121 (
[115]
of Crystal Growth 287, pp. 78–84 (2006)
[117] J. B. Cui, M. A. Thomas, Journal of Applied Physics 106, pp. 033518-1~033518-5 (2 C. H. Ah
261904-1~261904-3 (2009)