5.1 結論
總結前面所述，將目前得到的成果列於表5-1。由前述的實驗架構以及實驗成果 可看出，雖然InGaAsP之量子井數為AlGaInAs之ㄧ半，但是在脈衝能量與峰值功率上 卻小於後者之一半。得知利用低濃度0.5%摻雜之Nd:YVO4與InP基材上磊AlGaInAs QWs/ barrier多量子井半導體飽和吸收體SESA結構，配合輸出耦合鏡取代先前的布 拉格結構，無論是在脈衝雷射時域分佈上，以及脈衝能量、峰值功率能量都有不錯 的結果，因此可歸納出以AlGaInAs製作量子井材質的飽和吸收體，搭配對於1342nm 的反射率輸出鏡(R=96%)，可以成功地實現1.3μm穩定的高峰值脈衝雷射。
表5-1 各飽和吸收體實驗架構下的脈衝雷射特性
Absorber
（material）
Output Coupler
（Reflection）
@1342nm
Max output Power（mW）
Repetition rate（KHz）
P.E.
（µJ）
Peak Power
（W） Time domain
InGaAsP
(15 96％ 131 51.4 3.6 195 more stable QWs)
AlGaInAs
(15×2 QWs) 96％ 171 13.6 13.6 530 more stable
AlGaInAs
(15×2 QWs) 94％ 211 14.65 14.6 579 stable
5.2 未來工作展望
本論文中提出幾種半導體飽和吸收體之實驗架構，目的在於欲實現穩定的 1.3μm Q-開雷射，實驗研究中指出 AlGaInAs(15×2 QWs)/barrier 多量子井結構有 不錯的成果，在物理特性方面，本文僅針對量子井材料做定性的解釋，對於 SESA 結構其定量上達成飽合吸收之理論模型尚無全盤的分析，這一部分還有待日後多進 行幾組半導體量子井飽和吸收體的實驗來建構，實驗團隊將嘗試對兩種材料製作相 同的量子井數進行量測分析，亦或針對 AlGaInAs/InP 磊晶製作不同的量子井結構、
塊材結構（bulk layers），以期能夠實現更完美的 1.3μm 的高峰值脈衝雷射技術。
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