結論 - 高功率單模態面射型雷射技術之研究

我們證明以相同氧化孔徑(11μm)但合併鋅擴散圖形製作的VCSEL，可

以降低臨限電流，尤其花辦型擴散圖層可以達到1.6mA低臨限電流並在8mA 電流操作下仍可維持單模的特性，代表有著優異抑制邊模的效果。再來因鋅擴散加重了上層p-DBR 的摻雜濃度而有效降低串聯電阻，間接也降低了外部電路的RC常數。

我們比較兩種擴散深度1及1.4μm，發現1.4μm擴散深度其Slop effiency 及抑制邊模效果較佳，尤其是花辦形擴散圖層Slop effiency可達0.48 W/A，

所以擴散不只讓電阻減小也提高了外部效率。

而在三圓形擴散圖層方面，元件之飽和功率不如花辦圖形，可能是發光面積直接影響了元件發光效率，但如何維持高功率且單模態的特性，判斷日後在鋅擴散深度及擴散孔徑圖形為可持續研究的方向。

在未來實現光連結平行光傳輸用多維式陣列VCSEL，這樣的製作方法是非常有潛力去達到，但必須深入了解擴散圖形和高階光模態的關係，最佳的是以模擬軟體來預測鋅擴散及設計發光孔徑形狀來控制光模態，以形成較理想的單一圓形光點。

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