第五章 鑽石於氮化鋁基板上的成長
5.7 綜合結果與討論
1332 cm-1訊號峰之半高寬約10 cm-1，厚度可達 4 μm 而不會與氮化鋁分離，
且表面粗糙度可降至約30 nm。此外，根據過去文獻探討鑽石拉曼 1332 cm-1 訊號峰的半高寬與熱傳導係數的關係，本實驗成長出之鑽石膜其熱傳導係 數估計約為5-7 W/cm．K；若依照晶粒大小跟熱傳導係數之關係(圖 5.39)，
0.5 μm 晶粒之鑽石膜(圖 5.37)熱傳導係數~500 W/m．K，而 1 μm 晶粒之鑽 石膜(圖 5.34 及 5.36) 熱傳導係數則~700 W/m．K。
圖5.39 奈米鑽石膜之熱傳導係數跟晶粒尺寸之關係[91]。
AlN 具有很好的熱穩定性，在 1000°C 以上的高溫，仍可維持不變，
在平整之 AlN/Si 基板上若鑽石成核密度足夠大，則鑽石膜在厚度最薄而表 面平整且晶粒粗大的情形，將具有最佳化的熱傳性質。
氮化鋁為半導體元件上常見之材料，其與鑽石的結合被認為有助於提
高整體元件導熱性，因此了解鑽石在氮化鋁上的成核與成長特性，並在具 有平坦表面的c-plane 氮化鋁上成長出平整度高的鑽石膜，將有助於提升鑽 石於元件上的實用性。
SiC 單晶上製作之 AlGaN/GaN HEMT 功率密度可達數十 W/mm2，在操作 時自加熱(self-heating)效應，閘極區溫度可達~150 - 200°C[92]。然而，要從
元件表面導出熱，鑽石膜的厚度約需5 - 20 μm [93]。從前述之實驗結果可 以得知，膜厚4 μm 時，表面粗糙度可以< 40 nm 與晶粒尺寸> 1 μm，鑽石 膜將具有優越的熱傳導性質；然而，維持良好的鑽石/氮化鋁界面的附著性，
將是面臨的主要課題。
第六章 結論 分利用 SEM、XRD、Raman 光譜、AFM 之觀察與分析所得結果，加以總 結分別論述如下:
第二部分:
未來展望與建議
本實驗對於鑽石於氮化鋁/矽(111)之基板上的成核與成長機制、各種製 程參數與試片前處理的影響、以及高功率與低功率 MPCVD 成長的結果都 有詳盡的介紹，因此，或許能以本實驗之製程條件，將鑽石成長於其他特 性與氮化鋁相近之基板，如氮化矽，進一步拓展鑽石應用的層面。
附錄一 Gatan DigitalMicrograph使用方式
Gatan DigitalMicrograph 於本論文中的使用時機主要為計算氮化鋁表
面存在的縫隙面積占總面積的比例，以確保實驗結果不會因基板狀況差異 而受影響，以及計算成長鑽石後，鑽石覆蓋表面之面積，以下以計算氮化 鋁縫隙面積比例說明其使用步驟:
(1) 調整 AFM 之 RGB 影像中縫隙與晶粒的對比:於工具列之 Edit 內選擇 chang data type Æ Real Æ Bytes 8 ÆBrightnessÆOK，便可得一黑白對比 影像，再選擇工具列上AnalysisÆParticleÆStart Threshold，將對比調整 至約50(圖 A 直線處)，便可將圖上亮度較暗的縫隙與較亮的晶粒影像區 分出來。
圖A 調整縫隙與晶粒的對比
(2) 選擇 AnalysisÆParticleÆFind ParticlesÆAnalyze Particles，將跳出之視窗 中的area 欄內數值總數除以整張影像畫素，便可得出對比較深的縫隙面 積占總面積的比例，如圖B 所示。
圖 B 以 Gatan DigitalMicrograph 計算氮化鋁表面存在的縫隙面積 占總面積比例之結果。
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