的氧化銥反應，而使得我們無法很穩定地量測到其費米電位。因此我 們可以知道，經過表面鈍化處理的氧化銥，有著極佳的穩定特性。
參考文獻
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0.6 mm
(b) (a)
Figure 3.1 (a) microelectrode array pattern . (b) stainless mask .
0.4 mm 0.6 mm 0.4 mm 0.3
mm 0.6 mm 0.4
mm
0.4 mm
0.4 mm
Figure 3.2 The sputtering equipment setup.
Quartz cylinder shield Magnetron Sputter source
In line regulator RotaMeters Glass cylinder
(ψ=21cm)
Substrate Holder
Cooling water in
out Matching
Box RF generator
Vacuum Gauge Mechanical Pump
Ar Gas ring
ThermoCouple Gauge
Heater power Supply
O2
Silicon/SiO2
/Si3N4 Pt /Cr flag
IrO2 thin film WO3 thin film
(a)
(b)
(c)
Epoxy Ag epoxy
(d)
(e)
Epoxy
Figure 3.3 Schematic side view and top view of the summarized process flow for the fabrication of a sensor.
Oxide Pt /Cr
SiO2 Si3N4
N type Silicon
Figure 3.4 Schematic side viewof the summarized process flow for the lift-off processes.
Positive Photoresist Coating
Exposure ＆ Development
Remove Photoresist Sputtering
Deposition Oxide
Glass tube Cu wire
Epoxy shield Si substrate
Disc made of Cu wire
Pt Ag epoxy
IrO2 cover with Ta2O5
Fig.3.5. Ta2O5-IrO2 device
KEITHLEY -236
Glass tube Heater
N2
Thermal meter
Aluminum
Device
Dewar
Fig.3.6. The setup for measurement different temperature of I-V curve.
Mechanical pump Gauge Turbo molecular
pump
Window
High vacuum.
gauge Device Thermal meter
Fig.3.7 The setup for measurement different temperature of I-V curve in 10-7 torr
Auxiliary electrode (Pt wire)
Voltammetric analyzer BAS CV-50
Buffer solution (pH=2)
Reference electrode (SCE) Working electrode
(Ta2O5-IrO2)
Fig.3.8 The setup for measurement of Cyclic Voltammogram
-8 -6 -4 -2 0 2 4 -40
-30 -20 -10 0 10 20 30 40
27oC 50oC 100oC 120oC 150oC 200oC
Current (µA)
Voltage (V)
Fig4.1 I-V characteristics of a WO3/IrO2 device
-8 -6 -4 -2 0 2 4 -40
-30 -20 -10 0 10 20 30 40
27oC 50oC 100oC 120oC 150oC 200oC
Current (µA)
Voltage (V)
Fig4.2 I-V characteristics of a WO3/IrO2 device in N2
-8 -6 -4 -2 0 2 4 -10
-8 -6 -4 -2 0 2 4 6 8 10
27oC 50oC 100oC 120oC 150oC 2000C
Current (µA)
Voltage (V)
Fig4.3 In Air vs. In pure N2
-8 -6 -4 -2 0 2 4 -40
-20 0 20 40
27oC 50oC 70oC 100oC
Current (µA)
Voltage (V)
Fig4.4 I-V characteristics of a WO3/IrO2 device in 10-7 torr
-8 -6 -4 -2 0 2 4 -10
-8 -6 -4 -2 0 2 4 6 8 10
27oC 50oC 100oC
Current (µA)
Voltage (V)
Fig4.5 In Air vs. In 10-7 torr
-0.8 -0.6 -0.4 -0.2 0.0 -4
-3 -2 -1 0
Current density (µA/cm2 )
Potential vs. SCE (V)
Fig4.6 Injecting H+ in WO3/IrO2 device
-8 -6 -4 -2 0 2 4 -100
-50 0 50 100
27oC 50oC 100oC 120oC 150oC 200oC
Current (µA)
Voltage (V)
Fig4.7 I-V characteristics of a WO3/IrO2 device after injecting H+
-8 -6 -4 -2 0 2 4 -40
-20 0 20 40
27oC 50oC 100oC 120oC 150oC 200oC
Current (µA)
Voltage (V)
Fig4.8 In Air vs. Injecting H+
0.0 0.2 0.4 0.6 0.8 1.0
Current density (µA/cm2 )
Potential vs. SCE (V)
Fig 4.9 Cyclic voltammograms at various scan rate of IrO2 microelectrode in pH=2.0 buffer solution
0.0 0.2 0.4 0.6 0.8 1.0 -100
-80 -60 -40 -20 0 20 40 60 80
100 80 mV/s 100 mV/s 150 mV/s
Current density (µA/cm2 )
Potential vs. SCE (V)
Fig4.10 Cyclic voltammograms at various scan rate of Ta2O5/IrO2microelectrode in pH=2 buffer solution
0.0 0.2 0.4 0.6 0.8 1.0 -3.0
-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5
5 mV/s 10 mV/s 20 mV/s 50 mV/s
Current density (µA/cm2 )
Potential vs. SCE (V)
Fig4.11 Cyclic voltammograms at various scan rate of difference thickness IrO2 microelectrode in pH=2 buffer solution