總結 - 元件模擬結果與討論 - 多重閘極金氧半場效電晶體的變異特性模擬與分析

第三章元件模擬結果與討論

3.4 總結

模擬的結果顯示，三種類型的元件中，對低掺雜通道的多重閘極金

氧半場效電晶體元件，因鰭式場效電晶體對製程參數變異及隨機掺雜濃度變動具有較佳的抗擾性，皆可得到最小的起始電壓漂移量。而對高掺雜通道的多重閘極金氧半場效電晶體元件，因類平面場效電晶體具有較小的隨機掺雜濃度變動，故可得到較小的起始電壓漂移量。圖 3-32(a)及

對三種類型的起始電壓變量總和比較圖。由圖 3-32(a)，對於低掺雜通道鰭式場效電晶體無採用薄絕緣層的需要；而由圖 3-32(b)，高掺雜通道類平面場效電晶體採用薄絕緣層及類接地面基底可得到較佳的 electrostatics。

0 10 20 30 40 50 60 70 80

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-1 通道長度漂移(±10%)引起之起始電壓變量比較圖

Doping=1E17 cm

^-3

W

total

=75nm

t

HfO2

=2nm, V

=0.05V

Doping=6E18cm

^-3

W

total

=75nm

t

=1nm, V

=0.05V

(b)

圖 3-2 起始電壓對通道長度之關係圖 (a)低掺雜通道元件；(b)高掺雜通道元件

0 Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping Concentration(cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

(b)

圖 3-3 鰭狀通道寬度漂移引起之起始電壓變量比較圖

Doping=1E17cm

^-3

L

=25nm

0 Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

(b)

圖 3-5 鰭狀通道高度漂移引起之起始電壓變量比較圖

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5

20 22.5 25 27.5 30 32.5 35 37.5 40

V th (V)

L _g (nm)

Hfin_15nm Hfin_25nm

Doping=1E17 cm

^-3

t

HfO2

=2nm, V

=0.05V

圖 3-6 不同鰭狀通道高度的三閘極電晶體起始電壓對通道長度之關係圖

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-7 閘極氧化層厚度漂移(±10%)引起之起始電壓變量比較圖

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Conerntration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-8 通道掺雜濃度漂移(±10%)引起之起始電壓變量比較圖

0 10 20 30 40 50 60 70 80

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-9 隨機掺雜濃度變動引起之起始電壓變量比較圖

0.25

1.5E+10 5.0E+17 1.0E+18 1.5E+18 2.0E+18

V

(V)

4.0E+18 5.0E+18 6.0E+18 7.0E+18

V

(V)

NCH(cm^-3) FinFET

Trigate Q.Planar

Doping=6E18 cm

^-3

W

total

=75nm, L

=25nm t

=1nm, V

=0.05V Doping=1E17 cm

^-3

W

total

=75nm, L

=25nm t

HfO2

=2nm, V

=0.05V

(b)

圖 3-10 起始電壓對通道掺雜濃度之關係圖 (a)低掺雜通道元件；(b)高掺雜通道元件

0 10 20 30 40 50 60 70 80

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-12 通道長度漂移(±10%)引起之起始電壓變量比較圖

(a)

(b)

圖 3-13 電流分佈圖

0 Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

(b)

圖 3-14 鰭狀通道寬度漂移引起之起始電壓變量比較圖

0 Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

(b)

圖 3-15 鰭狀通道高度漂移引起之起始電壓變量比較圖

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-16 閘極氧化層厚度漂移(±10%)引起之起始電壓變量比較圖

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-17 通道掺雜濃度漂移(±10%)引起之起始電壓變量比較圖

0 10 20 30 40 50 60 70 80

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-18 隨機掺雜濃度變動引起之起始電壓變量比較圖

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-19 矽基底掺雜濃度變動引起之起始電壓變量比較圖

∆ V th,t ota l (m V)

Aspect Ratio

scenario #2 (bulk)

scenario #1 (100nm-box)

(a)

scenario #2 (bulk)

scenario #1 (100nm-box)

(b)

圖 3-20 厚絕緣層/矽基底多重閘極電晶體的起始電壓變量總和比較圖 (a)低掺雜通道元件；(b)高掺雜通道元件

0

Doping Concentration (cm^-3)

Hfin= 2Wfin (FinFET)

Hfin= Wfin (Tri-gate)

Hfin=1/2Wfin (Q.Planar)

S D

(a)

S D

(b)

圖 3-22 類似平面電晶體的電位分布圖 (a) 厚絕緣層(類型一);(b)薄絕緣層(類型三)

0 Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

(b)

圖 3-23 鰭狀通道寬度漂移引起之起始電壓變量比較圖

0 Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping Concentration (cm

^-3

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

(b)

圖 3-24 鰭狀通道高度漂移引起之起始電壓變量比較圖 (a)±10%漂移量;(b)1.5nm 固定漂移量

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration(cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-25 閘極氧化層厚度漂移(±10%)引起之起始電壓變量比較圖

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration(cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-26 通道掺雜濃度漂移(±10%)引起之起始電壓變量比較圖

0 10 20 30 40 50 60 70 80

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-27 隨機掺雜濃度變動引起之起始電壓變量比較圖

0.25

1.5E+10 5.0E+17 1.0E+18 1.5E+18 2.0E+18

Vth(V)

1.5E+10 5.0E+17 1.0E+18 1.5E+18 2.0E+18

V

(V)

N

_CH

(cm

^-3

)

FinFET

Trigate Q.Planar

Doping=1E17 cm

^-3

W

total

=75nm, L

=25nm t

HfO2

=2nm, V

=0.05V Doping=1E17 cm

^-3

W

total

=75nm, L

=25nm t

HfO2

=2nm, V

=0.05V

(b)

圖 3-28 低摻雜通道元件的起始電壓對通道摻雜濃度關係圖 (a) 厚絕緣層(類型一);(b)薄絕緣層(類型三)

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-29 埋層氧化層厚度變動引起之起始電壓變量比較圖

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm ^-3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

圖 3-30 矽基底掺雜濃度變動引起之起始電壓變量比較圖

scenario #1 (100nm-box) scenario #3 (10nm-box)

(a)

scenario #1 (100nm-box) scenario #3 (10nm-box)

(b)

圖 3-31 厚/薄絕緣層多重閘極電晶體的起始電壓變量總和比較圖

16 17

scenario 1 scenario 2 scenario 3

∆ V

th,total

(m V )

scenario 1 scenario 2 scenario 3

∆ V

th,total

(m V )

(b)

圖 3-32 三種類型的起始電壓變量總和比較圖

(a)低通道掺雜鰭式場效電晶體；(b)高通道掺雜類似平面電晶體

第四章結論與展望

4.1 結論

在本論文中探討了三種基底類型對應不同長寬比的多重閘極電晶體，因製程參數漂移及隨機掺雜濃度變動，對元件的起始電壓所造成之影響。由模擬的結果中，我們觀察到製程漂移引起的鰭狀通道高度 (fin-height)及鰭狀通道寬度(fin-width)變化，對不同長寬比的低掺雜通道元件之起始電壓的影響不盡相同。低掺雜通道元件對元件的長寬比具有相依性，亦即對不同長寬比的元件，在一固定的總通道寬度(W_total)下，製程參數漂移會引起不同的起始電壓變異。相反的，高掺雜通道元件對元件的長寬比則幾近乎不具有相依性。

由三種類型(厚絕緣層、矽基底及薄絕緣層)多重閘極金氧半場效電晶體的模擬結果及所呈現的趨勢來觀察，我們可以得到如下幾個結論：

(1) 對低掺雜通道的多重閘極金氧半場效電晶體元件，因鰭式場效電晶體(AR=2)具有較佳的 electrostatics，是故由製程參數漂移所引起的起始電壓變量較小。

(2) 對低掺雜通道的多重閘極金氧半場效電晶體元件，因鰭式場效電晶體(AR=2)對通道摻雜的敏感度較低，使其對隨機掺雜濃度變動的抗擾性較高。

(3) 對高掺雜通道的多重閘極金氧半場效電晶體元件，因類平面場效電晶體(AR=1/2)對隨機掺雜濃度變動的抗擾性較高，使其具有較

(4) 當矽基底被採用來製作多重閘極金氧半場效電晶體時，類平面場效電晶體(AR=1/2)的 electrostatics 將會變差。

(5) 當薄絕緣層與高摻雜的接地平面基底被採用來製作多重閘極金氧半場效電晶體時，將可改善低掺雜通道的類平面場效電晶體 (AR=1/2)及三閘極場效電晶體(AR=1)的 electrostatics。但對於鰭式場效電晶體(AR=2)則無採用薄絕緣層的需要。

(6) 採用薄絕緣層與高摻雜的類接地平面基底來製作多重閘極金氧半場效電晶體，可增強元件對隨機掺雜濃度變動的抗擾性，尤其是對低掺雜通道類平面場效電晶體(AR=1/2)的改善最為明顯。

由於厚絕緣層及矽基底兩種類型元件對起始電壓的抗擾度非常接近，因矽基底多重閘極金氧半場效電晶體因具有較低的晶圓成本，對金氧半製程相容性高及具有較佳的熱散逸等特性，如採用的為高掺雜通道元件時，不失為一良好選擇。而薄絕緣層多重閘極金氧半場效電晶體，

因絕緣層的邊緣效應(Electric-field fringing)得到抑制，及類接地面基底可得到較好元件起始電壓的抗擾度，對低掺雜通道類似平面電晶體及三閘極電晶體，薄絕緣層與高摻雜的接地平面基底應為最佳選擇，但較薄厚度的埋層氧化層在製程上的挑戰，是採用此種基底所需面臨的問題。

4.2 後續工作

本論文已針對各種製程參數漂移及隨機掺雜濃度變動，在低汲極電壓(Low drain bias)下，對各元件起始電壓的影響做一全面性探討，但對於元件在高汲極電壓(High drain bias)下，製程參數漂移及隨機掺雜濃度變動對元件起始電壓特性的影響則尚未探討，是未來可以繼續研究的部份。

而對於矽基底多重閘極金氧半場效電晶體(類型二)，貫穿阻止植入 (punch through stopper implantation)對元件特性的影響亦未被探討。藉由增加此一製程手續，應可降低漏電流，進而減小元件的短通道效應，得到較佳的起始電壓抗擾度，是此類型元件可繼續深入探討的部分。

另外，隨著元件的尺寸微縮持續進行，量子效應(Quantum effect)對元件特性所產生的影響，則需加以考量。

參考文獻

[1] G. Knoblinger et al., “Multi-Gate MOSFET Design,” ESSDRC, pp.65-68, Sept. 2006.

[2] O. Faynot et al., “Advanced SOI technologies: advantages and drawbacks,” International Workshop on Junction Technology, pp.200-203, May 2006.

[3] Nagumo, T and Hiramoto, T

, “

Design Guideline of Multi-Gate MOSFETs with Substrate-Bias Control,” IEEE Transactions on Electron Device, Vol.53, Issue 12, pp.3025-3031, Dec. 2006.

[4] A. V-Y Thean et al., “Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors,” EDM, pp.1-4, Dec.2006.

[5] Aniket Breed and Kenneth P. Roenker, “Comparison of the scaling characteristics of nanoscale silicon N-channel multiple-gate MOSFETs,”

Circuit and System, Vol. 1, pp.603-606, Aug. 2005.

[6] S. Inaba et al., “FinFET: the prospective multi-gate device for future SoC applications,” ESSDRC, pp.49-52, Sept. 2006.

[7] Jong-Ho Lee et al., “Device Design Consideration for 50nm Dynamic Random Access Memory Using Bulk FinFET,” Japan Journal of Applied

Physics, Vol. 44, No. 4B, pp.2176-2179, 2005.

[8] Hey Jin Cho et al., “’The Vth Controllability of 5nm Body-Tied CMOS FinFET,” VLSI Technology, pp.116-117, April 2005.

[9] Lisa T. Su et al., “Deep-Submicrometer Channel Design in Silicon-on-Insulator (SOI) MOSFET’s,” IEEE Electron Device Letter, Vol.15, Issue 5, pp.183-185, May 1994.

[10] Jyi-Tsong Lin et al., “Recessed Multi-Gate SOI MOSFET in deep deca-nanometer regime,” IEEE International SOI Conference, pp.47-48,

Oct. 20001.

[11] Seung-Hwan Kim et al., “Bulk inversion in FinFETs and implied insights on effective gate width,” IEEE Transactions on Electron

Device, Vol.52, Issue 9, pp.1993-1997, Sept. 2005.

[12] V.P. Trivedi and J.G. Fossum, “Nanoscale FD/SOI CMOS: Thick or Thin BOX?,” IEEE Electron Device Letters Vol.26, No. 1, pp.26-28, Jan.

2005.

[13] Yu-Sheng Wu and Pin Su, “Investigation of Variability for Multi-Gate MOSFETs Using Analytical Solution of 3-D Poisson’s Equation” Silicon

Nanoelectronics Workshop, pp.87-88, June. 2007.

[14] Y. Taur and T.H. Ning, “Fundamentals of Modern VLSI Device,”

Cambridge University Press, 1997.

[15] James B. Kuo and Shih-Chia Lin, “LOW-VOLTAGE SOI CMOS VLSI DEVICES AND CIRCUIT,” WILEY Press, 2001.

[16] ISE TCAD Release 10.0 Manual.

A.1 Input deck of heavily doped FinFET (DEVISE)

(define Xcha (* 0.5 0.015)) (define Ycha (* 0.5 0.025)) (define Zcha 0.03)

(define Tgox 0.001) (define Tbox 0.1) (define bodydoping 6e18)

(define Xgox (+ Xcha Tgox)) (define Ygox Ycha) (define Zgox (+ Zcha Tgox))

(define Xsd Xcha) (define Ysd (+ Ycha 0.02)) (define Zsd Zcha)

(define Xbox (* 3 Xcha)) (define Ybox Ysd) (define Zbox (* -1 Tbox))

;---;

;--- Channel

(isegeo:create-cuboid (position 0 (* -1 Ycha) 0) (position Xcha Ycha Zcha) "Silicon" "channel" )

;--- Gate Oxide

(isegeo:set-default-boolean "BAB")

(isegeo:create-cuboid (position 0 (* -1 Ygox) 0) (position Xgox Ygox Zgox) "Oxide" "gate_oxide" )

;--- Poly Gate

(isegeo:create-cuboid (position 0 (* -1 Ygox) 0) (position (+ 0.001 Xgox) Ygox (+ 0.001 Zgox)) "PolySi" "Gate")

;--- contact gate

(define GateID (find-body-id (position 0 Ygox (* 0.5 (+ Zgox (+ 0.001 Zgox))) ) )) (isegeo:define-contact-set "gate" 4 (color:rgb 1 0 0 ) "##" )

(isegeo:set-current-contact-set "gate") (isegeo:set-contact-boundary-faces GateID) (isegeo:delete-region GateID )

;--- contact Source/Drain

(isegeo:create-cuboid (position 0 Ycha 0) (position Xsd Ysd Zsd) "Silicon" "drain_region" )

(isegeo:create-cuboid (position 0 (* -1 Ycha) 0) (position Xsd (* -1 Ysd) Zsd) "Silicon" "source_region" )

;--- BOX

(isegeo:create-cuboid (position 0 (* -1 Ybox) 0) (position Xbox Ybox Zbox) "Oxide" "BOX" )

;--- contact substrate

(isegeo:define-contact-set "substrate" 4 (color:rgb 1 0 0 ) "##" ) (isegeo:set-current-contact-set "substrate")

(isegeo:set-contact-faces (find-face-id (position (* 0.5 Xbox) 0 Zbox)))

;---;

;--- imprint for S/D

(isegeo:imprint-rectangular-wire (position 0 (+ 0.005 Ycha) Zcha) (position Xsd Ysd Zcha))

(isegeo:imprint-rectangular-wire (position 0 (* -1 (+ 0.005 Ycha)) Zcha) (position Xsd (* -1 Ysd) Zcha))

;---;

;--- contact drain

(isegeo:define-contact-set "drain" 4 (color:rgb 1 0 0 ) "##" ) (isegeo:set-current-contact-set "drain")

(isegeo:set-contact-faces (find-face-id (position (* 0.5 Xsd) (* 0.5 (+ Ysd (+ 0.005 Ycha))) Zsd)))

;--- contact source

(isegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##" ) (isegeo:set-current-contact-set "source")

(isegeo:set-contact-faces (find-face-id (position (* 0.5 Xsd) (* -1 (* 0.5 (+ Ysd (+ 0.005 Ycha)))) Zsd)))

;---;

;--- doping Si

(isedr:define-constant-profile "body_doping" "BoronActiveConcentration" bodydoping) (isedr:define-constant-profile-material "body_doping" "body_doping" "Silicon")

(isedr:define-refinement-window "drain_doping" "Cuboid" (position (* -1 Xsd) Ycha 0) (position Xsd Ysd Zsd)) (isedr:define-constant-profile "drain_doping" "ArsenicActiveConcentration" 2e20)

(isedr:define-constant-profile-placement "drain_doping" "drain_doping" "drain_doping")

;--- doping source

(isedr:define-refinement-window "source_doping" "Cuboid" (position (* -1 Xsd) (* -1 Ycha) 0) (position Xsd (* -1 Ysd) Zsd)) (isedr:define-constant-profile "source_doping" "ArsenicActiveConcentration" 2e20)

(isedr:define-constant-profile-placement "source_doping" "source_doping" "source_doping")

;--- mesh Si

(isedr:define-refinement-size "Si_Mesh" (/ Xsd 2.5) (/ Ysd 2.5) (/ Zsd 2.5) (/ Xsd 5) (/ Ysd 5) (/ Zsd 5)) (isedr:define-refinement-material "Si_Mesh" "Si_Mesh" "Silicon" )

(isedr:define-refinement-function "Si_Mesh" "DopingConcentration" "MaxTransDiff" 1)

;--- mesh main

(isedr:define-refinement-window "main_mesh" "Cuboid" (position 0 (* -1 (+ Ycha Tgox)) 0) (position Xcha (+ Ycha Tgox) Zgox)) (isedr:define-refinement-size "main_mesh" (/ Xsd 8) (/ Ysd 10) (/ Zsd 8) (/ Xsd 20) (/ Ysd 100) (/ Zsd 20) )

(isedr:define-refinement-placement "main_mesh" "main_mesh" "main_mesh" )

(isedr:define-refinement-function "main_mesh" "DopingConcentration" "MaxTransDiff" 1)

;--- mesh BOX

(isedr:define-refinement-window "BOX_mesh" "Cuboid" (position 0 (* -1 Ybox) 0) (position Xbox Ybox (* -1 Zcha))) (isedr:define-refinement-size "BOX_mesh" (/ Xbox 4) (/ Ybox 4) (/ Zcha 3) (/ Xbox 8) (/ Ybox 8) (/ Zcha 8) ) (isedr:define-refinement-placement "BOX_mesh" "BOX_mesh" "BOX_mesh" )

(isedr:define-refinement-function "BOX_mesh" "DopingConcentration" "MaxTransDiff" 1)

;--- mesh total

(isedr:define-refinement-window "total_mesh" "Cuboid" (position 0 (* -1 Ybox) 0) (position Xbox Ybox Zbox)) (isedr:define-refinement-size "total_mesh" (/ Xbox 3) (/ Ybox 3) (/ (* -1 Zbox) 3) (/ Xbox 5) (/ Ybox 5) (/ (* -1 Zbox) 5) ) (isedr:define-refinement-placement "total_mesh" "total_mesh" "total_mesh" )

(isedr:define-refinement-function "total_mesh" "DopingConcentration" "MaxTransDiff" 1)

;--- mesh topoxide

(isedr:define-refinement-window "topoxide_mesh" "Cuboid" (position 0 (* -1 Ygox) (- Zcha Tgox)) (position Xgox Ygox (+ Zcha Tgox)))

(isedr:define-refinement-size "topoxide_mesh" (/ Xsd 5) (/ Ysd 5) (/ Tgox 3) (/ Xsd 20) (/ Ysd 20) (/ Tgox 6) ) (isedr:define-refinement-placement "topoxide_mesh" "topoxide_mesh" "topoxide_mesh" )

(isedr:define-refinement-function "topoxide_mesh" "DopingConcentration" "MaxTransDiff" 1)

;--- mesh buriedoxide

(isedr:define-refinement-window "buriedoxide_mesh" "Cuboid" (position 0 (* -1 Ygox) (* -1 Tgox)) (position Xgox Ygox Tgox)) (isedr:define-refinement-size "buriedoxide_mesh" (/ Xsd 5) (/ Ysd 5) (/ Tgox 3) (/ Xsd 20) (/ Ysd 20) (/ Tgox 6) )

(isedr:define-refinement-placement "buriedoxide_mesh" "buriedoxide_mesh" "buriedoxide_mesh" ) (isedr:define-refinement-function "buriedoxide_mesh" "DopingConcentration" "MaxTransDiff" 1)

;--- mesh frontoxide

(isedr:define-refinement-window "frontoxide_mesh" "Cuboid" (position (- Xcha Tgox) (* -1 Ygox) 0) (position Xgox Ycha Zgox)) (isedr:define-refinement-size "frontoxide_mesh" (/ Tgox 3) (/ Ysd 5) (/ Zsd 5) (/ Tgox 6) (/ Ysd 20) (/ Zsd 20) )

(isedr:define-refinement-placement "frontoxide_mesh" "frontoxide_mesh" "frontoxide_mesh" ) (isedr:define-refinement-function "frontoxide_mesh" "DopingConcentration" "MaxTransDiff" 1)

;--- save BND and CMD

(ise:assign-material-and-region-names (part:entities (filter:type "solid?"))) (iseio:save-dfise-bnd (part:entities (filter:t pe "solid?")) "@boundary/o@") y (isedr:write-cmd-file "@commands/o@")

A.2 Input deck of heavily doped FinFET (DESSIS)

Electrode {

{ Name="gate" Voltage=-0.3 barrier=-0.55}

{ Name="substrate" Voltage=0}

{ Name="drain" Voltage=0.0}

{ Name="source" Voltage=0}

}

Physics {

EffectiveIntrinsicDensity(OldSlotboom)

Recombination(SRH(DopingDependence) Auger Avalanche(Eparallel)) }

Plot {

eDensity hDensity eCurrent hCurrent DisplacementCurrent

Potential SpaceCharge ElectricField hMobility eVelocity hVelocity

Doping DonorConcentration AcceptorConcentration }

Math { Extrapolate Derivatives RelErrControl Digits=5

ErRef(electron)=1.e10 ErRef(hole)=1.e10 Notdamped=50 Iterations=30 Newdiscretization Directcurrent Method=ParDiSo -VoronoiFaceBoxMethod NaturalBoxMethod }

Solve {

Coupled(iterations=150) { Poisson } Coupled { Poisson Electron } NewCurrentFile="n@node@_init"

Quasistationary(

InitialStep=1e-1 Increment=5 Minstep=1e-2 MaxStep=0.5 Goal{ name="drain" voltage=0.05 } ){

Coupled { Poisson Electron } }

Quasistationary ( DoZero

InitialStep=1e-1 Increment=5 Minstep=1e-2 MaxStep=0.5 Goal { Name="gate" Voltage=-0.3 } ) { Coupled { Poisson Electron} } #-ramp gate:

NewCurrentFile=""

Quasistationary ( DoZero

InitialStep=1e-2 Increment=1.5 Minstep=1e-5 MaxStep=0.01 Goal { Name="gate" Voltage=0.4 } )

{ Coupled {Poisson Electron} }

在文檔中多重閘極金氧半場效電晶體的變異特性模擬與分析 (頁 33-0)

總結

第三章 元件模擬結果與討論

3.4 總結

0 10 20 30 40 50 60 70 80

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm -3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping=1E17 cm

W

=75nm

t

=2nm, V

=0.05V

Doping=6E18cm

W

=75nm

t

=1nm, V

=0.05V

0

Doping Concentration (cm

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping Concentration(cm

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping=1E17cm

L

=25nm

0

Doping Concentration (cm

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

Doping Concentration (cm

)

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5

20 22.5 25 27.5 30 32.5 35 37.5 40

V th (V)

L g (nm)

Hfin_15nm Hfin_25nm

Doping=1E17 cm

t

=2nm, V

=0.05V

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm -3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

0 5 10 15 20 25 30 35 40

1.0E+17 6.0E+18

∆ V th (m V )

Doping Conerntration (cm -3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

0 10 20 30 40 50 60 70 80

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm -3 )

Hfin= 2Wfin (FinFET) Hfin= Wfin (Tri-gate) Hfin=1/2Wfin (Q.Planar)

V

(V)

V

(V)

Doping=6E18 cm

W

=75nm, L

=25nm t

=1nm, V

=0.05V Doping=1E17 cm

W

=75nm, L

=25nm t

=2nm, V

=0.05V

0 10 20 30 40 50 60 70 80

1.0E+17 6.0E+18

∆ V th (m V )

Doping Concentration (cm -3 )

第三章元件模擬結果與討論

Doping Concentration (cm ^-3 )

L _g (nm)

Doping Concentration (cm ^-3 )

Doping Conerntration (cm ^-3 )

Doping Concentration (cm ^-3 )

Doping Concentration (cm ^-3 )

Doping Concentration (cm ^-3 )

Doping Concentration (cm ^-3 )

Doping Concentration (cm ^-3 )

Doping Concentration (cm ^-3 )

Doping Concentration(cm ^-3 )

Doping Concentration(cm ^-3 )