雷射二極體驅動電路量測

Pattern DUT generator

50Ω

HP 86100B oscilloscope Pattern DUT

generator

50Ω

HP 86100B oscilloscope

圖4-7 儀器架設

這個雷射二極體驅動器主要設計在提供 40~100mA的調變電流，以及一個 1~60mA的切換電流，量測的方式分為電氣量測及光學量測，輸入信號由一個信 號產生器產生2³¹-1 的隨機二元資料送入電路中，一端以AC couple的方式接到示 波器中以電氣方式量測，另一端以50Ω匹配之後接到一個等效內阻為 50Ω的雷射 二極體(NEL, NLK5B5E2FA)再經由光纖傳送到示波器中，圖 4-8 為以電氣方式量 測的輸出眼圖，圖4-8(a)為調變電流為 40mA，而圖 4-8(b)為調變電流為 100mA 時的輸出，都有符合SNET OC-192 的眼圖遮罩規格，圖 4-9 所示為輸出眼圖符合 10Gbps Ethernet Network的眼圖遮罩規格，輸入的信號主要是來自於儀器 2³¹-1 PRBS generator 所產生的PECL 的隨機信號，在Imod=100mA時 Tr/Tf=47ps，在 1mod=40mA時Tr/Tf=46ps，決定性抖動約為 22.2psp-p，隨機抖動為 2.86psrms，圖 4-10 為雷射二極體驅動電路的晶片照相圖，所使用的製程為 0.35µm SiGe BiCMOS process，總面積大約為 1430×940µm²，總共的消耗功率為1.08W，整個 效能如表4-1 所示。

(a) (b)

圖4-8 LD driver量測眼圖(SONET OC192) (a)Imod=40mA, (b)Imod=100mA

(a) (b)

圖4-9 LD driver量測眼圖(10GbEthernet) (a)Imod=40mA, (b)Imod=100mA

圖4-10 雷射二極體驅動電路晶片照相圖

Driver Summary

Supply Voltage 3.3 V

Total Power 1.08W

Bias Current 1~60mA

Modulation Current 40~100mA

Input Pattern 10 Gbps 2³¹-1 PRBS Generator

Rise/Fall Time 47ps

Deterministic Jitter 22.2psp-p/2.86psrms

Chip Size 1430x940 µm²

Process 0.35um SiGe BiCMOS

表4-1 雷射二極體驅動電路效能

第五章

結論

5.1 結論

本論文研究內容主要著重於同步光纖網路 SONET OC-192 系統中的發射器 電路，內容包括一個 10Gbps 的資料序列器，以及一個 10Gbps 的雷射二極體驅 動器，晶片是以0.35µm SiGe BiCMOS 製程設計而成，我的研究成果分述如下。

首先是提出一個在發射器前端的資料序列器的架構，可以將 16 筆並列式的 625Mbps的資料轉成一筆串列式的 10Gbps的二元資料，多工器為樹狀架構，資 料在傳遞過程被錯排成不同的相位，可以因此而減少一些功率的消耗，並且使用 時脈倍頻器來產生多種頻率及相位的時脈信號當作多工器的選擇信號，時脈倍頻 器的迴路頻寬可以使輸出的雜訊低於OC-192 的抖動規格，並且能保證迴路處於 一 個 穩 定 的 狀 態 ， 電 壓 控 制 振 盪 器 輸 出 正 交 相 位 ， 輸 出 頻 率 範 圍 大 約 為 9.89GHz~11.36GHz，可以使這個時脈倍頻器可以應用在SONET OC-192 包括有 誤碼更正時的傳輸率、10Gbps Ethernet、及Optical Transport Network，為了量測

時的方便性，我們另外內建了一個隨機碼產生器，可以產生 16 筆並列式的

625Mb/s 的 資 料 ， 送 給 多 工 器 來 驗 證 多 工 器 的 效 能 ， 整 個 晶 片 面 積 為 2240×2260µm²，電源電壓3.3V之下，消耗的功率為 594.66mW，模擬的資料序列 器輸出結果為1.9psp-p。

第二部分為實現一個操作在 10Gbps的雷射二極體驅動電路，可以將資料序 列器輸出的電壓信號經由驅動電路轉換成電流信號，雷射二極體的偏壓電流為 1~60mA，調變電流為 40~100mA，內部電路包括一個兩級的前置驅動器，並以 推挽式射極隨耦器來增加對後級的驅動能力，調變電流源主要為一個切換電路，

將電壓信號轉換成電流信號來驅動雷射二極體，使用負電容的技巧來抵消米勒效 應造成的電容性負載，一個Bandgap電流源提供整個電路所需的電流，使電路在 大電流操作之下，對於製程及溫度的變異比較不敏感，電子式量測的結果，符合 SONET OC-192 的眼圖規格，Tr/Tf約為46ps，輸出抖動為 22.2psp-p或2.86psrms， 整個晶片面積為1490×940µm²，在操作電壓3.3V，消耗功率為 1.08W。

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