1) TEM image to evidence the real thickness of each layer.
2) SIMS analysis to reveal the distribution of the element atoms in the memory
cell.
3) The physical mechanism of endurance degradation for 30Ǻ silicon nitride.
4) The physical mechanism of densify CVD TEOS improves retention
characteristics.
5) Looking for a solution to improve that erase speed decrease after reoxidation of
silicon nitride trapping layer.
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