The storage mechanism of our devices still needs some verification. First, trap distribution in the band-gap of SiO2 and Al2O3 at the interface or in the bulk is still unclear in our case. The properties of traps are important information for the explanation of storage effect.
Also, other analysis techniques might be used. For example, Raman spectroscopy might be one of the possible tools. Many papers had used Raman spectroscopy to determine the
valuable topic. Other high-κ materials used in today’s integrated circuit industry such as HfO2
could be tried. Due to their different trap distributions, different memory properties are expected and some optimization might be done.
Finally, to basically improve CNT-based devices, the growth process of CNT might be the most important issue. Randomly spreading CNTs have many uncertainties which are unfavorable for device application. A well defined CNT array might be the goal in the CNT-memory application.
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