Six critical issues relating to soldering reactions arising from the space confinement in 3D IC packages are proposed and discussed in this thesis. Theoretical analysis and experimental evidence are used to demonstrate the new issues, and the implications are also suggested based on the findings. Conclusions and implications of the six issues are stated as below.
I. Peculiar Morphology of Cu/Sn/Cu and Ni/Sn/Ni Reactions
Interfacial morphology of Cu/Sn/Cu and Ni/Sn/Ni sandwiches in the solid-liquid and solid-state reaction under the space confinement are examined. The solder volume reduction has very little effects on the reaction products. The IMC species are Cu6Sn5
and Cu3Sn for Cu-Sn reactions and Ni3Sn4 for Ni-Sn reactions. In a solder joint containing 10 m-thick solder layer, the solder can be fully transformed into IMC in a reasonable time for assembly or isothermal aging, suggesting a fact that the 3D IC micro-joint will be largely or even entirely occupied by IMCs. In addition, the intrinsic defect of voiding can occur in Cu/Sn/Cu and Ni/Sn/Ni joints, which is always thought a key factor to be responsible for the degradation of reliabilities. For Cu/Sn/Cu system, a certain number of micro-voids are observed within the Cu3Sn layer, especially for samples are subjected to the solid-state aging. This is indeed a critical issue due to a fact
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that Cu3Sn can eventually occupied the entirety of the solder joint in 3D IC packages.
Having these voids within the joint no doubt posts severe reliability concerns. For Ni/Sn/Ni reactions, the voiding can also occur, which is attributed to the volume shrinkage and the Ni3Sn4 grain impingement. Unlike Sn, a relatively soft material, IMCs tends to be hard and brittle. 3D IC joints containing a large portion of the brittle phase and the dotted intrinsic defects, i.e., voids, should perform peculiar mechanical properties. The metallurgical effects on the mechanical performance do need further investigations.
II. Impingement and Merging of IMC Grains
Grain merging behaviour does occur in Cu/Sn/Cu and Ni/Sn/Ni reactions. For Cu/Sn/Cu in the solid-liquid reaction, the merging behaviour starts to occur as the Cu6Sn5 grains growing from the opposite interfaces impinge on each other. The Cu6Sn5
grains after impingement will be vertically merged into single crystalline grains spanning across the interfaces. Interestingly, the merged Cu6Sn5 grains seems having a preferred orientation with the a-axis normal to the Cu substrates. The merging behaviour can also occur in the solid-state Cu/Sn/Cu reaction. However, shape of the merged grains is somewhat irregular, and the averaged grain size is relatively small. This morphology is considered as a result of the relative slow diffusion rate in the solid-state
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reaction. In Ni/Sn/Ni reactions, merging behaviour was also observed. Interestingly, a few fine grains of Ni3Sn4 can form at each interface as the merging process proceeds. It is believed that the merging behaviour is highly related to the grain coarsening. The driving force of grain coarsening is to minimise the total surface energy. However, the formation of the fine grain structure will cause an increment of the total surface energy.
The mechanisms of merging behaviour and the formation of fine grains are uncertain and need further investigations.
III. Effects of Solder Volume Reduction on IMCs Growth Kinetics
Cu/Sn(10m)/Cu and Ni/Sn(5, 7, 10m)/Ni sandwiches were reacted at 150, 180, 200 or 250 oC to study solder volume effects on the IMC growth kinetics. Kinetics analyses reveal that IMC growth rate constants measured in the present study are comparable to the literature data at a fixed temperature, suggesting that the IMC growth rates are independent of the solder volume. In other words, the solder volume reduction has very little impacts on the IMC growth rate. Based on these results, it can be concluded that IMC growth rate constants obtained in previous literatures, with bulk, BGA or flip-chip size scaled reactions, are still valid in micro-joints for 3D IC applications
.
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IV. Effects of Inert Alloy Constituents in the Space Confined Soldering Reaction
Effects of Ag and Bi addition on the space confined soldering reactions are studied.
Microstructure characterisations reveal that Ag atoms in the reaction simply react with Sn to form Ag3Sn, and will be rejected from the soldering reactions. Ag3Sn particles finally end up locating near the centre of the joint as the Sn phase has been fully consumed. It can be anticipated that Ag3Sn will become a continuous layer as a higher Ag-bearing solder is used. It is interesting that the 2.4 wt.% Ag addition can eliminate voids which occurred in the Ni/Sn/Ni reaction. One other unexpected effect is that Ag addition sufficiently slows the Ni3Sn4 growth rate in the solid-state reaction, and the key reason to be responsible for the slowdown is the out diffusion of Ag atoms from the advancing interfaces.
Similar to Ag, Bi tends not to incorporate itself into Cu6Sn5 or Ni3Sn4, and is rejected into the remaining solder as interfacial IMCs grow. However, there is one difference between Ag and Bi: Ag reacts with Sn to form an IMC but Bi does not. In Cu/Sn10Bi/Cu reactions, Bi particles end up locating in the middle of the interfaces as the Sn has been fully consumed. As a higher Bi-bearing solder, Sn-58Bi (wt.%), is used, a continuous Bi layer can form throughout the joint. Bi tends to be soft and brittle, so that having a continuous Bi layer throughout the joint can cause great impacts on the mechanical
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properties. An implication regarding results of Bi-redistribution is that the effects of impurity in 3D IC micro-joints deserve a great attention. Most impurities are insoluble in IMCs and will be rejected from the soldering reaction. These impurities would probably decorate in the middle of interfaces or along the IMC grain boundaries when the Sn phase has been fully consumed. As a result, the joint strength may become degraded.
V. Area-to-volume Ratio Effects Relating to the Surface Finish
Ni/SnxAu/Ni sandwiches with x= 0.8, 1.3, 2.6 and 3.9 wt.% were aged at 200 oC to clarify the Au embrittlement issues in 3D IC packages. Microstructure characterisations show that the resettlement of (Au,Ni)Sn4 phase takes place at the interfaces as the reaction proceeds. These (Au,Ni)Sn4 particles finally end up locating near the centre of the interfaces as the Sn phase has been fully consumed. The upper limit of Au concentration was determined as 1.3 wt.%. Once the Au content exceeds this upper limit in the solder, it posts Au embrittlement concerns due to a fact that the (Au,Ni)Sn4 phase has a chance to form a continuous layer throughout the joint. The critical concentration,
i.e., 1.3 wt.% Au, is relevant to that a 50 nm-thick Au layer from the surface finish or UBM was completely dissolved into a 10 m-thick Sn solder layer in a joint.
Accordingly, it can be concluded that the Au embrittlement problem becomes relevant
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in the 3D IC scale packaging. There are two questions remain unanswered in the present work. The first one concerns the solder volume effects on the upper limit of Au concentration. The second one is the effective Cu addition required to prevent Au embrittlement. Moreover, there is always a need of the mechanical properties evaluations on this issue.
VI. Soldering Reaction Induced Volume Shrinkage
It is the first time that the soldering reaction induced volume shrinkage is experimentally illustrated. For Ni-Sn reactions, the theoretical volume shrinkage is 11.3
%. According to experimental results, 7.3 % shrinkage is dissipated through the vertical thickness reduction, and 3.1 % shrinkage is dissipated with the void formation. The total volume shrinkage is the sum of the two contributions, i.e., 7.3 % + 3.1 % = 10.4 %, which is close to the theoretical value. Thickness reduction and void formation seems to be competitive factors dissipating the volume shrinkage. In case that the thickness reduction dissipates a larger portion of the volume shrinkage, the void formation can be consequently suppressed. However, the two means dissipating the volume shrinkage are all regarded to post joint strength and reliability concerns.
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Ph.D. - National Taiwan University, Taiwan, Sep. 2007 – Jan. 2012.
(Materials Science & Engineering)
M.S. - National Dong-Hwa University, Taiwan, Sep. 2005 – Jul. 2007.
(Materials Science & Engineering)
B.S. - Technology and Science Institute of Northern Taiwan, Sep. 2001 – Jul. 2005.
(Mechanical Engineering)
Awards and Honours
1. Presidential Award (Undergraduate, 2003) 2. Presidential Award (Undergraduate, 2004)
3.
Honorable Mention (Materials Research Society – Taiwan)4.
Best Paper Award (Electronic Circuits World Convention, 2011)5.
Merit Prize, Outstanding PCB Thesis Award (Taiwan Printed Circuit Association, 2011)List of Journal Publications
1. H. Y. Chuang, T. L. Yang, M. S. Kuo, Y. J. Chen, J. J. Yu, C.C. Li and C. R. Kao, Critical Concerns in Soldering Reactions Arising from Space Confinement in 3D IC Packages, Submitted to IEEE Transactions on Device and Materials Reliability (EI, SCI).
2. H. Y. Chuang, J. J. Yu, M. S. Kuo, H. M. Tong and C. R. Kao, Elimination of Voids in Reaction between Ni and Sn: a Novel Effect of Silver, Scripta Materialia (EI, SCI), 66 (2012) 171-174.
3. H. Y. Chuang, C. H. Lin, J. P. Chu C. R. Kao, Novel Cu-RuNx Composite Layer with Good Solderability and Very Low Consumption Rate, Journal of Alloys and
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Compounds (EI, SCI), 504 (2010) L25-L27.
4. Y. W. Lin, J. H. Ke, H. Y. Chuang, Y. S. Lai and C. R. Kao, Electromigration in Flip Chip Solder Joints Under Extra High Current Density, Journal of Applied Physics (EI, SCI), 107 (2010) 073516 1-4.
5. M. H. Tsai, Y. W. Lin, H. Y. Chuang and C. R. Kao, Effect of Sn Concentration on Massive Spalling in High-Pb Soldering Reaction with Cu Substrate, Journal of Materials Research (EI, SCI), 24 (2009) 3407-3411.
6. J. M. Song and H. Y. Chuang, Faceting Behavior of Primary Ag in Bi-Ag Alloys for High Temperature Soldering Applications, Materials Transactions (EI, SCI), 50 (2009) 1902-1904.
7. J. M. Song, H. Y. Chuang and T. X. Wen, Thermal and Tensile Properties of Bi-Ag
7. J. M. Song, H. Y. Chuang and T. X. Wen, Thermal and Tensile Properties of Bi-Ag