Relative Intensity Noise (RIN) of multiple quantum well (MQW) DFB laser and chirped multilayer quantum dot (CMQD) lasers have been measured and analyzed. The carrier dynamics in multilayer quantum structure are therefore determined.
The temperature-dependent RIN measurement of MQW DFB laser was undertaken to evaluate the K-factor and differential gain. Carrier transport is limited by multiple layer structure in the DFB laser as the values of K-factor remain almost constant at 0.33 ns in the temperature range of 10 - 40 ℃.
Therefore, the intrinsic maximum modulation bandwidth ( fmax ) is evaluated to be 27 GHz. However, differential gain reflects the nature of gain spectrum broadening which decreases by a factor of approximately 1.5 (from 1.66×10-15 cm2 down to 1.1×10-15 cm2) over the measured temperature range.
The RIN measurement is limited for short cavity lasers as modes contribute to partition noise that average out the power fluctuation. In general, cavity length for RIN measurement is suggested to be within 2 mm. The characteristics of chirped multilayer quantum dot (CMQD) lasers has been presented with different cavity lengths of 750 μm, 1000 μm, and 1500 μm at ambient temperature of 20 ℃. For cavity length of 750 μm, the highly damped RIN spectra have calibrated level of -160dB/Hz, which consist with the literature. In addition, excited state lasing is essential in our device in order to overcome the total loss and therefore reaches the lasing condition.
The differential gain is estimated to be in the range of 3.0-8.210-16 cm2, which is subject to junction heating in as-cleaved devices. However, the K-factor limited bandwidth (fmax), which is temperature insensitive, is as
large as 14 GHz, shows excellent agreement with Stevens et al., who firstly demonstrated direct modulation of excited state QD lasers in August 2009. To the best of our knowledge, we have successfully demonstrated RIN spectrum of excited state quantum dot lasers for the first time.
Another unexpected observation is the double-resonance RIN spectra in even shorter cavity length of 600 μm. However, the mechanism is still a controversial issue. Therefore, this thesis has thrown up some questions for further investigation.
Reference
[1] Ustinov and Victor M., Quantum dot lasers, p105, Oxford science publications (2003)
[2] A. E. Zhukov et al., “Gain characteristics of quantum dot injection lasers,”
Semicond. Sci. Technol., 14, 118-123 (1999)
[3] M. C. Tatham et al., “Resonance Frequency, Damping, and Differential Gain in 1.5 m Multiple Quantum-Well Lasers”, IEEE J. Quantum Electron., 34, 408 (1992)
[4] C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol., LT-4, 298 (1986)
[5] Jungo et al.,”Scaling effects on vertical-cavity-surface-emitting lasers static and dynamic behavior,” J. Appl. Phys., 91, 5555 (2002)
[6] C. B. Su et a.l, “Explanation of low-frequency relative intensity noise in semiconductor lasers,” Appl. Phys. Lett., 57, 849 (1990)
[7] S. O. Kasap, Optoelectronics and Photonics Principles and Practices, p.242, Prentice Hall (2001)
[8] Larry A. Coldren and Scott W. Corzine, “Diode Laser and Photonic Integrated Circuits,” p.223, Wiley-Interscience (1995)
[9] Lukas Chrostowski, “Optical Injection Locking of Vertical Cavity Surface Emitting Lasers”, PhD Thesis, Univ. of California at Berkeley (2003) [10] A. Capua et al, “Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser”, Optics Express, 15, 5388 (2007)
[11] L. F. Tiemeijer et al, “Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of strain of InGaAs/InP
strained-layer multiquantum well lasers,” Appl. Phys. Lett., 58, 2738 (1991) [12] Hanh Lu et al., “High-Power and High-speed Performance of 1.3-μm Strained MQW Gain-Coupled DFB Lasers,” IEEE J. Select. Topics quantum electron., 1 ,315 (1995)
[13] G. Lin et al., “Novel Chirped Multilayer Quantum-Dot Lasers,” Proc. of SPIE, 6997, 69970R-1 (2008)
[14] H. Dery and G. Eisenstein, "Self consistent rate equations of self assembly quantum wire lasers," IEEE J. Quantum Electron., 40, 1398 (2004) [15] M. Kuntz et al., “Spectrotemporal response of 1.3 m quantum-dot lasers,” Appl. Phys. Lett., 81, 3846 (2002).
[16] D. Bimberg, M. Grundmann, and N. N. Ledentsov,” Quantum Dot Heterostructures, “New York: Wiley (1998)
[17] M. Sugawara, “Self-Assembled InGaAs/GaAS Quantum Dots,” New York: Academic (1999)
[18] R. H.Wang et al., “Room-temperature operation of InAs quantum-dash lasers on InP (001),” IEEE Photon. Technol. Lett., 13, 767 (2001)
[19] H. Dery and G. Eisenstein," The impact of energy band diagram and inhomogeneous broadening on the optical differential gain in nanostructure lasers," IEEE J. Quantum Electron, 41, 26-35 (2005)
[20] N. Tessler et al., "Structure dependent modulation response in quantum well lasers," IEEE J. Quantum Electron., 28, 2242 (1992)
[21] Michel Krakowski et al., “High power, very low noise, C.W. operation of 1.32μm Quantum-Dot Fabry-Perot Laser Diodes,” 2006 IEEE 20th International Semiconductor Laser conference, TuC4 (2006)
[22] A. Capua1 et al., ”Direct correlation between a highly damped
quantum dot laser”, OPTICS EXPRESS, 15, 5388 (2007)
[23] M. Ishida et al., “Photon lifetime dependence of modulation efficiency and K factor in 1.3 µm self-assembled InAs/GaAs quantum-dot lasers:
Impact of capture time and maximum modal gain on modulation bandwidth,”
Appl. Phys. Lett., 85, 4145 (2004)
[24] B. J. Stevens et al.,” Direct modulation of excited state quantum dot lasers,” Appl. Phys. Lett., 95, 061101 (2009)
[25] Angel Valle and Luis Pesquera, ” Theoretical Calculation of Relative Intensity Noise of Multimode Vertical-Cavity Surface-Emitting Lasers,”
IEEE J. Quantum Electron., 40, 597 (2004)
[26] L. G. Zei et al., “Noise performance of multimode VCSELs,” J.
Lightwave Technol., 19, 884 (2001)
簡歷(Vita)
姓名:湯皓玲 (Hao-Ling Tang) 性別:女
出生年月日:民國 74 年 8 月 27 日 學歷:
國立中正大學物理系學士 (92.9~96.6)
國立交通大學電子研究所碩士班 (96.9~98.9)
碩士論文題目:
半導體量子結構雷射元件之相對雜訊強度研究
Study on Relative Intensity Noise of Semiconductor Quantum Structure Lasers