In the first part, the fabrication of green emission semipolar {10-11} GaN-based LED on GaN nanopyramid template was given. The threading dislocation density (TDD) in semipolar MQWs was reduced through bending by epitaxy lateral overgrowth (ELO), which was shown in TEM images. The thickness of the quantum well and quantum barrier were uniform on the incline facet. Moreover, the longer emission signal was observed from the apex of pyramid by cathodoluminescence (CL) measurements, which shown that higher Indium content was formed by the geometrical structure and growth condition.
In the second part, we investigated the quality of semipolar {10-11} InGaN/GaN MQWs by photoluminescence measurements. Comparing with the c-plane MQWs, the internal electric field (IEF) of semipolar MQWs was drastically decreased from 1.7 MV/cm to 0.5 MV/cm. And the IQE enhancement was about 40% from c-plane to semipolar MQWs. From TRPL measurement, the radiative recombination lifetime of semipolar MQWs was shorter than that of c-plane MQWs. Moreover, semipolar MQWs had smaller ratio of 𝝉𝒓/𝝉𝒏𝒓 at room temperature, which evince that radiative recombination process is more comparable with nonradiactive process. These results can confirm the reduction of QSCE by using semipolar {10-11} MQWs.
In the third part, we used current dependent EL measurement to analysis the performances of green, olivine and amber emission nanopyramid LEDs. The L-I-V
curves and photograph images of emission were given. And the emission wavelength shift behavior was discussed. The light output power density of green nanopyramid LED is as high as 1500 mW/cm2 at 40 mA and the electrical properties are comparable with conventional c-plane LEDs. It could be clearly seen that the peak wavelength only made a 5 nm blue shift from 40 mA to 200 mA and stabilized at 495 nm, which evinced the low IEF properties of semipolar MQWs. Besides, the light output power of olivine and orange LEDs were around 400 and 200 mW/cm2. The leakage became pronounced from green to orange emission, which resulted from poor crystalline quality as growing the orange emission MQWs at lowest temperature than others. It is worth noting that the emission peak can be pushed as long as 640 nm in the orange nanopyramid LED.
In summary, we successfully demonstrate the high quality green emission semipolar {10-11} GaN-based nanopyramid LED, which has great potential to develop high efficiency full color III-nitride light emitters.
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