This thesis presents the design and implementation of a broadband DLNA using 0.15-μm GaAs pHEMT and a broadband PA by using 65nm CMOS technology.
In Chapter 2, the fully on-chip broadband matrix balun followed to the third-stage amplifiers is used. The 3-dB bandwidth of the proposed DLNA covers from 3.3 to 11.3 GHz. The measurement results demonstrate 28.3-dB gain and average in-band noise figure of 1.4 dB with DC power consumption of 85 mW.
In Chapter 3, a wideband high output power PA with a broadband matching network is presented. The proposed wideband PA achieves 52.3% 1-dB Psat
fractional bandwidth (BW) from 24 to 41 GHz, 38.2% output 1-dB compression point (OP1dB) BW from 25 to 37 GHz, and a PAE above 20% from 26 to 38 GHz.
The measured EVM of 64-QAM OFDM signal is under -25 dBc at the average Pout
of 14.8/14.7/15.2/15.8 dBm with an average PAE 1.6/1.5/1.8/2.3 % at 28 GHz and under -25 dBc at the average Pout of 13.8/14.5/14.5/16 dBm with an average PAE 1.2/1.6/1.6/2.7 % at 38 GHz.
This thesis introduced two broadband techniques. One is using R-L-C negative feedback to generate a positive gain slope in order to compensate the overall frequency response of the gain. The other is using high magnetic coupling coefficient of transformer to reduce the variation of impedance over wide frequency range. When the circuit using inductive source degeneration to obtain a positive gain slope, the broadband technique prefers R-L-C negative feedback to high magnetic coupling coefficient of transformer. In contrary, when the target matching impedance is almost the same over wide frequency, the high magnetic coupling coefficient is more suitable. To sum up, each matching technique has its own merits at each
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