6.1 Conclusion
In this dissereation, we have successfully fabricated and demonstrated GaAs- and InP-based HBTs and FETs. Several structures, including the InP/InGaAs co-integrated heterostructure bipolar and field-effect transistors (BiFETs) with pseudomorphic base-emitter spacer and channel layers, the GaAsSb/InGaAs type-II doped-channel field-effect transistors (DCFETs), the InGaP/GaAs/GaAsBi heterojunction bipolar transistors, and InGaP/GaAs/GaAsBi heterojunction bipolar transistor with InGaP/GaAs superlattice-emitter structure, are presented and studied in this work. The results exhibit high DC performances, such as high transconductance, high current gain, high device linearity, and low offset voltage, etc.
For the BiFETs, the HBT is stacked on the top of a FET. A relatively thin and heavily doped In0.65Ga0.35As pseudomorphic channel layer is located between two undoped InP layers, so the gate forward operation voltage, drain current, and transconductance are enhanced. On the other hand, the valence band discontinuity at InP/In0.65Ga0.35As heterojunction and emitter injection efficiency could be further extended in the HBT. Furthermore, the delta doping layer between two In0.65Ga0.35As spacer layers at emitter side could
effectively eliminate the potential spike at base-emitter junction for reducing the collector-emitter offset voltage. Consequentially, the co-integrated devices show good transistor performance.
The studied GaAsSb/InGaAs type-II DCFET and the conventional InP/InGaAs type-I DCFET are systematically studied and demonstrated. Due to the presence of a relatively large conduction band discontinuity (ΔEc ~ 0.4 eV) at GaAsSb/InGaAs heterostructure and the formation of two-dimensional electron gas in the n+-InGaAs doping channel, the GaAsSb/InGaAs DCFET exhibits a higher drain current, high transconductance, and low gate turn-on voltage than the InP/InGaAs type-I DCFET. However, due to the tunneling effect under large gate-to-source bias, it results in considerably large gate leakage current in the GaAsSb/InGaAs DCFET.
The DC performance of In0.49Ga0.51P/GaAs/GaAs0.975Bi0.025 and In0.49Ga0.51P/GaAs HBTs are demonstrated. For the use of GaAs1−xBix base layer, the band-gap discontinuity ΔEg is almost equal to the ΔEv at GaAs/GaAsBi heterojunction. As compared to InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter turn-on voltage, and a relatively lower collector-emitter offset voltage. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B-E turn-on voltage to decrease. However, the current gain is slightly smaller than the InGaP/GaAs HBT attributed to the increase of base current
for the minority carriers stored in the GaAsBi base.
Consequentially, based on above results, the studied GaAsBi base HBT with In0.49Ga0.51P/GaAs superlattice-emitter device offers the promise for an extremely wide operation regime than 10 decades of collector current (10-8 to 1.5 102 mA). In addition, the studied device exhibits a low collector-emitter offset voltage and a high current gain.
6.2 Prospect
In this dissertation, we have demonstrated some improved devices, such as BiFET, type-II heterojunction DCFET, GaAsBi base HBT, and GaAsBi base HBT with superlattice-emitter. In order to improve the DC performance, some possible directions are proposed as follow:
(i) reduce the gate length and optimize the electrode pads size to improve the device performances.
(II) the graded doping can increase the In mole fraction and increase the mobility.
(iii) change barrier layer in the compound material. The quaternary compound material increases the conduction band discontinuity to the GaInAs channel by introducing of antimony (Sb) to AlInAs. The better electron confinement in the GaInAs channel enables us to reduce the gate current at forward biases and, thus, to enhance the gate swing for logic operation [113,114].
(v) the studied devices would be used for microwave integrated circuit applications.
References
[1] S. C. Lee, J. N. Kau, and H. H. Lin, “Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor,” Appl. Phys. Lett., vol.
45, pp. 1114-1116, 1984.
[2] Y. H. Jan and S. C. Lee, “Vertical monolithic integration of a GaAs/AlGaAs V-channeled substrate inner stripe laser diode and a heterojunction bipolar transistor,” Appl. Phys. Lett., vol. 57, pp.
2750-2752, 1990.
[3] H. H. Lin and S. C. Lee, “Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning design,” Appl. Phys.
Lett., vol. 47, pp. 839-841, 1985.
[4] H. Kroemer, “Theory of wide-gap emitter for transistors,” Proc. IRE, vol.
45, pp. 1535-1536, 1957.
[5] H. Kanbe, J. C. Vlcek, and C. G. Fonstad, “(In,Ga)As/InP n-p-n heterojunction bipolar transistors grown by liqued phase wpitaxy with high dc current gain,” IEEE Electron Device Lett., vol. 5, pp. 5-7, 1984.
[6] M. J. Mondry and H. Kroemer, “Heterojunction bipolar transistor using a (Ga.In)P emitter on a GaAs base, grown by molecular beam epitaxy,”
IEEE Electron Device Lett., vol. 6, pp. 175-177, 1985.
[7] J. Xu and M. Shur, “A tunneling emitter bipolar transistor,” IEEE Electron Device Lett., vol. 7, pp. 416-418, 1986.
[8] F. E. Najjar, D. C. Rasulescu, Y. K. Chen, G. W. Wicks, P. J. Tasker, and L, F. Easman, “DC characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor,” Appl. Phys. Lett., vol. 50, pp. 1915-1917, 1987.
[9] A. F. J Levi, R. N. Nottenburg, Y. K. Chen, and J. E. Cunningham,
“AlAs/GaAs tunnel emitter bipolar transistor,” Appl. Phys. Lett., vol. 54, pp. 2250-2252, 1989.
[10] W. S. Lour, “High-gain, low offset voltage, and zero potential spike by InGaP/GaAs d-doped single heterojunction bipolar transistor (d-SHBT),”
IEEE Trsns. Electron Device, vol. 44, pp. 346-348, 1997.
[11] W. B. Chen, Y. K. Su, C. L. Lin, H. C. Wang, S. M. Chen, J. Y. Su, and M. C. Wu, “Fabrication of InGaP/Al0.98Ga0.02As/GaAs oxide-confined collector-up heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 24, pp. 619-621, 2003
[12] T. Suemitsu, H. Yokoyama, T. Ishii, T. Enoki, G. Meneghesso, and E.
Zanoni, “30-nm two-step recess gate InP-based InAlAs/InGaAs HEMTs,” IEEE Trans. Electron Devices, Vol. 49, pp. 1694-1700, 2002.
[13] T. Suemitsu, T. Ishii, H. Yokoyama, T. Enoki, Y. Ishii, and T. Tamamura,
“30-nm gate InP-based lattice-matched high electron mobility transistors with 350GHz cutoff frequency,” Jpn. J. Appl. Phys., Vol. 38, No. 2B, pp.
L154-L156, 1999.
[14] S. R. Bahl and J. A. del Alamo, “Breakdown voltage enhancement from
channel quantization in InAl/As/n+-InGaAs HFET's,” IEEE Electron Device Lett., Vol. 13, pp. 123-125, 1992.
[15] A. W. Hanson, S. A. Stockman, and G. E. Stillman, “Comparison of In0.5Ga0.5P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base,” IEEE Electron Device Lett., vol. 14, pp.
25-28, 1993.
[16] C. R. Bolognesi, M. M. W. Dvorak, P. Yeo, X. G. Xu, and S. P. Watkins,
“InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs,” IEEE Trans. Electron Devices, Vol. 48, pp. 2631-2639, 2001.
[17] B. P. Yan, C. C. Hsu, X. Q. Wang, and E. S. Yang, “Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD,” IEEE Electron Device Lett., vol. 23, pp. 170-172, 2002.
[18] W. P. Neo and H. Wang, “Temperature dependence of the electron impact ionization in InGaP-GaAs-InGaP DHBTs,” IEEE Trans. Electron Devices, Vol. 51, pp. 304-310, 2004.
[19] V. E. Houtsma, J. Chen, J. Frackoviak, T. Hu, R. F. Kopf, R. R. Reyes, A. Tate, Y. Yang, N. G. Weimann, and Y. K. Chen, “Self-heating of submicrometer InP-InGaAs DHBTs,” IEEE Electron Device Lett., vol.
25, pp. 357-359, 2004.
[20] W. S. Lour, W. L. Chang, Y. M. Shih, and W. C. Liu, “New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD,”
IEEE Electron Device Lett., vol. 20, pp. 304-306, 1999.
[21] W. C. Hsu, Y. J. Chen, C. S. Lee, T. B. Wang, Y. S. Lin, and C. L. Wu,
“High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT,” IEEE Electron Device Lett., vol. 26, pp. 59-61, 2005.
[22] C. H. Oxley and M. J. Uren, “Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor,” IEEE Trans. Electron Devices, Vol. 52, pp. 165-169, 2005.
[23] S. D. Mertens, J. A. DelAlamo, T. Suemitsu, and T. Enoki, “Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack,” IEEE Trans.
Electron Devices, Vol. 52, pp. 305-310, 2005.
[24] C. S. Choi, H. S. Kang, W. Y. Choi, D. H. Kim, and K. S. Seo,
“Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems,” IEEE Trans. Microwave Theory and Techniques, Vol. 53, pp. 256-263, 2005.
[25] P. Fay, K. Stevens, J. Elliot, and N. Pan, “Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs,” IEEE Electron Device Lett., vol. 21, pp. 141-143, 2000.
[26] C. J. Wei, Y. A. Tkachenko, and D. Bartle, “A new modle for enhancement-mode power pHEMT,” IEEE Trans. Microwave Theory and Techniques, Vol. 50, pp. 57-61, 2002.
[27] J. H. Wei, “A novel InGaP/InGaAs/GaAs double δ-doped pHEMT with camel-like gate structure,” IEEE Electron Device Lett., vol. 24, pp. 1-3,
2003.
[28] R. Menozzi, “Off-state breakdown of GaAs PHEMTs: review and new data,” IEEE Trans. Device and Materials Reliablity, Vol. 4, pp. 54-62, 2004.
[29] Y. C. Chou, R. Grundbacher, D. Leung, R. Lai, P. H. Liu, and Q. Kan,
“Physical identification of gate metal interdiffusion in GaAs PHEMTs,”
IEEE Electron Device Lett., vol. 25, pp. 64-66, 2004.
[30] Y. C. Chou, D. Leung, R. Grundbacher, R. Lai, P. H. Liu, Q. Kan, M.
Biedenbender, D. Eng, and A. Oki, “The effect of gate metal interdiffusion on reliability performance in GaAs PHEMTs,” IEEE Electron Device Lett., vol. 25, pp. 351-353, 2004.
[31] M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, and D.
Theron, “60-GHz high power performance In0.35Al0.65As-In0.35Ga0.65As metamorphic HEMTs on GaAs,” IEEE Electron Device Lett., vol. 254 pp.
724-726, 2003.
[32] B. H. Lee, D. An, M. K. Lee, B. O. Lim, S. D. Kim, and J. K. Rhee,
“Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology,” IEEE Electron Device Lett., vol. 25, pp. 766-768, 2004.
[33] Y. J. Chen, W. C. Hsu, C. S. Lee, T. B. Wang, C. H. Tseng, J. C. Huang, D. H. Huang, and C. L. Wu, “Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors,” Appl. Phys. Lett., vol.
85(21), pp. 5087-5089, 2004.
[34] Y. C. Lien, E. Y. Chang, H. C. Chang, L. H. Chu, G. W. Huang, H. M.
Lee, C. S. Lee, S. H. Chen, P. T. Shen, and C. Y. Chang, “Low-noise metamorphic HEMTs with reflowed 0.1-μm T-gate,” IEEE Electron Device Lett., vol. 25, pp. 348-350, 2004.
[35] C. K. Lin, W. K. Wang, Y. J. Chan, and H. K. Chiou, “BCB-Bridged distributed wideband SPST switch using 0.25μm In0.5Al0.5As-In0.5Ga0.5As metamorphic HEMTs,” IEEE Trans. Electron Devices, Vol. 52, pp. 1-5, 2005.
[36] C. C. Liu, Y. H. Chen, M. P. Houng, Y. H. Wang, Y. K. Su, W. B. Chen, and S. M. Chen, “Improved light-output power of Gan LEDs by selsctive region activation,” IEEE Photonics Technology Letters, Vol. 52, No. 6, pp. 1444-1446, 2004.
[37] Y. K. Su, H. C. Wang, C. L. Lin, W. B. Chen, and S. M. Chen,
“Improvement of AlGaInP light emitting diode by sulfide passivation,”
IEEE Photonics Technology Letters, Vol. 15, pp. 1345-1347, 2003.
[38] D. S. Wuu, W. K. Wang, W. C. Shin, R. H. Homg, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photonics Technology Letters, Vol. 17, pp. 288-290, 2005.
[39] J. O. Song, D. S. Leem, S. K. Joon, Y. Park, S. W. Chae, and T. Y.
Seong, “Improvement of the luminous intensity of light-emitting diodes
by using highly transparent Ag-indium tin oxide p-typeohmic contacts,”
IEEE Photonics Technology Letters, Vol. 17, pp. 291-293, 2005.
[40] D. Vasileska and S. S. Ahmed, “Narrow-width SOI devices: the role of quantum-mechanical size quantization effect and unintentional doping on the device operation,” IEEE Trans. Electron Devices, Vol. 52, pp.
227-236, 2005.
[41] J. H. Yoo, C. Nack, G. H. Yang, and I. S. Park, “Stabilizing LD power in a wide temperature range for optical burst-mode communications by means of optical filter,” IEEE Photonics Technology Letters, Vol. 12, pp.
843-845, 2000.
[42] W. Birk, I. Arvanitidis, P. G. Jonsson, and A. Medvedev, “Physical modeling and control of dynamic foaming in an LD-converter process,”
IEEE Trans. Industry applications, vol. 37, pp. 1067-1073, 2001.
[43] J. H. Tsai, “High-performance AlInAs/InGaAs d-doped HEMT with negative differential resistance switch for logic application”, Solid-State Electron., Vol. 48, No. 1, pp. 81-85, 2004.
[44] S. J. Yu, W. C. Hsu, Y. J. Chen, C. L. Wu, “High power and high breakdown d-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT,”
Solid-State Electron., Vol. 50, No. 2,pp. 291–296, 2006.
[45] L. W. Laih, J. H. Tsai, W. C. Liu, W. C. Hsu, and W. S. Lour,
“Investigation of InGaAs/GaAs doped-channel MIS-like pseudomorphic transistor,” Solid-State Electron., Vol.38, No. 10, pp. 1747-1753, 1995.
[46] P. Ellrodt, W. Brockerhoff and F. J. Tegude, “Investigation of Leakage Current Behavior of Schottky Gates on InAlAs/InGaAs/InP HFET Structures by a ID Model,” Solid-State Electron., Vol. 38, pp. 1775-1780, 1995.
[47] J. A. Garrido, J. L. Sanchez-Rojas, A. Jimenez, E. Munoz F. Omnes, and P. Gibar, “Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis,”
Appl. Phys. Lett., Vol. 75, No. 16, pp.2407, 1999.
[48] S. S. Lu and C. C. Huang, “High-current-gain Ga0.51In0.49P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy,” IEEE Electron Device Lett., vol. 13, pp. 214-216, 1992.
[49] M. A. Rao, E. J. Caine, H. Kroemer, S. I. Long, and D. I. Babicc,
“Determination of valence and conduction-band discontinuities at the (Ga,In)P/GaAs heterojunction by C-V profiling,” J. Appl. Phys., vol. 61, pp. 643-649, 1987.
[50] E. Yablonovitch, R. Bhat, C. E. Zah, T. J. Gmitter, and M. A. Koza,
“Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces,” Appl. Phys. Lett., Vol. 60, pp. 371-373, 1992.
[51] M. Borgarino, R. Plana, S. L. Delage, F. Fantini, and J. Graffeuil,
“Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBTs,” IEEE Trans. Electron Devices, Vol. 46, pp. 10-16,
1999.
[52] R. Lyer, R. R. Chang, and D. L. Lile, “Sulfur as a surface passivation for InP,” Appl. Phys. Lett., Vol. 53, pp. 134-136, 1988.
[53] R. Driad, Z. H. Lu, S. Charbonneau, W. R. McKinnon, S. Laframoboise, P. J. Poole, and S. P. McAlister, “Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment,” Appl.
Phys. Lett., Vol. 73, pp. 665-667, 1998.
[54] N. Chand and H. Morkoc, “Doping effects and compositional grading in AlxGa1-xAs/GaAs heterojunction bipolar transistors,” IEEE Trans.
Electron Devices, Vol. 32, pp. 1064-1069, 1985.
[55] J. J. Liou, C. S. Ho, L. L. Liou, and C. I. Huang, “An analytical model for current transistor in AlGaAs/GaAs abrupt HBTs with a setback layer,” Solid-State Electron., Vol. 36, pp. 819-825, 1993.
[56] N. Chand, R. Fischer, and H. Morkoc, “collector-emitter offset voltage in " Appl. Phys. Lett., Vol. 47, pp. 313-315, 1985.
[57] H. R. Chen, C. P. Lee, C. Y. Chang, J. S. Tsang, and K. L. Tsai., “The study of emitter thickness effect on the heterostructure emitter bipolar transistors,” J. Appl. Phys., vol. 74, pp. 1398-1402, 1993.
[58] Y. W. Chen, W. C. Hsu, H. M. Shieh, Y. J. Chen, Y. S. Lin, Y. J. Li, and T. B. Wang, “High breakdown characteristic δ–doped InGaP/InGaAs/AlGaAs tunneling real space transfer HEMT,” IEEE Trans. Electron Devices, Vol. 49, pp. 221, 2002.
[59] J. N. Burghartz, S. R. Mader, B. J. Ginsberg, B. S. Meyerson, J. M. C.
Stork, C. L. Stanis, U. Y. C. Sun, and M. R. Polcari, “Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology,” IEEE Trans. Electron Devices, Vol. 38, pp.
378-385, 1991.
[60] M. M. Jahan and A. F. M. Anwar, “Junction temperature dependence of high-frequency noise in heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 16, pp. 551-553, 1995.
[61] M. M. Jahan and A. F. M. Anwar, “Early voltage in double heterojunction bipolar transistors,” IEEE Trans. Electron Devices, Vol.
42, pp. 2028-2029, 1995.
[62] S. J. Chang and C. P. Lee, “Light-induced sidegating effect in GaAs MESFETs,” IEEE Trans. Electron Devices, Vol. 40, pp. 2186-2191, 1993.
[63] Y. J. Jeon, Y. H. Jeong, B. Kim, Y. G. Kim, W. P. Hong, and M. S. Lee,
“DC and RF performance of LP-MOCVD grown
Al0.25Ga0.75As/InxGa1-xAs (x=0.15-0.28) P-HEMTs with Si-delta doped GaAs layer,” IEEE Electron Device Lett., vol. 16, pp. 563-565, 1995.
[64] A. F. M. Anwar, K. W. Liu, and A. N. Khondker, “A charge control and current-voltage model for inverted MODFETs,” IEEE Trans. Electron Devices, Vol. 42, pp. 586-590, 1995.
[65] H. M. Shieh, W. C. Hsu, R. T. Hsu, C. L. Wu, and T. S. Wu, “A
high-performance δ–doped GaAs/InxGa1-xAs pseudomorphic high electron mobility transistor utilizing a graded InxGa1-xAs channel,” IEEE Trans. Electron Devices, Vol. 14, pp. 581-583, 1993.
[66] W. C. Liu, K. H. Yu, R. C. Liu, K. W. Liu, K. P. Liu, C. H. Yen, C. C.
Cheng, and K. B. Thei, “Investigation of temperature-dependent characteristics of an n+-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor,” IEEE Trans. Electron Devices, Vol. 48, pp. 2677-2683, 2001.
[67] L. W. Laih, S. Y. Cheng, W. C. Wang, P. H. Lin, J. Y. Chen, W. C. Liu, and W. Lin, “High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET),” IEEE Electron Device Lett., vol. 33, pp. 98-99, 1997.
[68] H. Hida, A. Okamoto, H. Toyoshima, and K. Ohata, “A high-current drivability I-AlGaAs/n-GaAs-doped, channel MIS-like FET (DMT),”
IEEE Electron Device Lett., vol. 7, pp. 625-626, 1986.
[69] S. C. Hung, Q. Luan, H. Y. Lin, S. Li, and S. J. Chang, “Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET,” Current Applied Physics, vol. 13, pp. 1577-1580, 2013.
[70] A. Bensoussan, R. Marec, J. L. Muraro, L. Portal, P. Calvel, C. Barillot, M. G. Perichaud, L. Marchand, and G. Vignon, “GaAs p-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing,” Microelectronics Reliability, vol. 53,
pp. 1466-1470, 2013.
[71] K. H. Yu, W. L. Chang, S. C. Feng, and W. C. Liu, “Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor,”
Solid-State Electron., Vol. 44, pp. 2069–2075, 2000.
[72] N. H. Sheng, C. P. Lee, R. T. Chen, and D. L. Miller, “GaAs/AlGaAs double heterostructure high electron mobility transistors,” IEDM Tech.
Dig., pp. 352-355, 1984
[73] N. H. Sheng, C. P. Lee, R. T. Chen, D. L. Miller, and S. J. Lee,
“Multiple-channel GaAs/AlGaAs high electron mobility transistor,”
IEEE Electron Device Lett., vol. 6, pp. 307-310, 1985.
[74] W. P. Hong, J. Harbison, L. T. Florez, and J. H. Abeles,
“Characterization of Al0.3Ga0.7As/GaAs quantum-well delta-doped channel FET grown by molecular-beam epitaxy,” IEEE Trans. Electron Devices, Vol. 36, pp. 2615-2616, 1989.
[75] D. H. Jeong, K. S. Jang, J. S. Lee, Y. H. Jeong, and B. Kim, “DC and AC characteristics of Al0.25Ga0.75As/GaAs quantum-well delta-doped channel FET grown by LP-MOCVD,” IEEE Electron Device Lett., vol.
13, pp. 207-272, 1992.
[76] S. J. Chang and C. P. Lee, “Numberical simulation of sidegating effect in GaAs MESFETs,” IEEE Trans. Electron Devices, Vol. 40, pp. 689-704, 1993.
[77] F. T. Chien, S. C. Chiol, and Y. I. Jen, “Microwave power performance
comparison between single and dual doped-channel design in AlGaAs/InGaAs HFETs,” IEEE Electron Device Lett., vol. 21, pp. 60-62, 2000.
[78] S. C. Yang, H. C. Chiu, M. J. Hwu, W. K. Wang, C. K. Lin, and Y. J.
Chan, “Submicron RIE recessed InGaP/InGaAs doped-channel FETs,”
IEEE Trans. Electron Devices, Vol. 50, pp. 1555-1558, 2003.
[79] H. C. Chiu, S. C. Yang, Y. J. Chan, and J. M. Kuo, “High schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance,” IEEE Electron Device Lett., vol. 36, pp.
1968-1969, 2000.
[80] P. Saunier and H. Q. Tserng, “DC and AC characteristics AlGaAs/InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiers,” IEEE Electron Device Lett., vol. 36, pp. 2231-2235, 1989.
[81] H. M. Chuang, S. Y. Cheng, C. Y. Chen, X. D. Liao, R. C. Liu, and W.
C. Liu, “Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET),”
IEEE Trans. Electron Devices, Vol. 50, pp. 1717-1722, 2003.
[82] Y. S. Lin, T. P. Sun, and S. S. Lu, “Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage,” IEEE Electron Device Lett., vol. 18, pp.
150-153, 1997.
[83] J. H. Tsai, T. Y. Weng, and C. M. Li, “Integration of enhancement/depletion-mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic application,”
Semiconductor Science and Technology, vol. 23, pp. 075018-075023, 2008.
[84] M. E. Kim, A. K. Oki, G. M. Gorman, D. K. Umemoto, and J. B.
Camou, “GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications,”
IEEE Trans. Microwave Theory and Techniques, vol. 37, pp. 1286-1303, 1989.
[85] D. Streit, R. Lai, A. Oki, and A. Gutierrez-Aitken, “InP HEMT and HBT technology and applications,” 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, pp.
14-17, 2002.
[86] Y. S. Lin and J. J. Jiang, “Temperature-dependence of current gain, ideality factor and offset voltage of AlGaAs/GaAs and InGaP/GaAs HBTs,” IEEE Trans. Electron Devices, Vol. 56, pp. 2945-2951, 2009.
[87] J. H. Tsai, Y. J. Chu, J. S. Chen, and K. P. Zhu, “The influence of a delta-doped sheet on Dc performances of InP/InGaAs heterojunction bipolar transistors,” Superlattices & Microstructures, vol. 37, pp.
203-215, 2005.
[88] Y. F. Yang, C. C. Hsu, and E. S. Yang, “Integration of GaInP/GaAs
heterojunction bipolar transistors and high electron mobility transistors,”
IEEE Trans. Electron Devices, Vol. 17, pp. 363-365, 1996.
[89] K. W. Kobayashi, D. K. Umemoto, J. R. Velebir, A. K. Oki, and D. C.
Streit, “Complementary HBT push-pull amplifier by selective MBE,”
IEEE Microwave and Guided Wave Letters, vol. 2, pp. 149-150, 1992.
[90] D. G.. Hill, H. Q. Tserng, and T. S. Kim, “65/90 GHz complementary HBT technology,” Electron. Lett., vol. 30, pp. 597-598, 1994.
[91] H. Yang, H. Wang, K. Radhakrishnan, and C. L. Tan, “Thermal resistance of metamorphic InP-based HBTs on GaAs substrates using a linearly graded InxGa1-xP metamorphic buffer,” IEEE Trans. Electron Devices, Vol. 51, pp. 1221-1227, 2004.
[92] Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard,
“Thermal performance of metamorphic double heterojunction bipolar transistors with InP and InAlP buffer layers,” IEEE Electron Device Lett., vol. 23, pp. 297-299, 2002.
[93] Y. J. Chen, W. C. Hsu, Y. W. Chen, Y. S. Lin, and R. T. Hsu,
“InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations,” Solid-State Electron., Vol. 49, pp. 163-166, 2005.
[94] L. W. Yin, Y. Hwang, J. H. Lee, R. M. Kolbas, R. J. Trew, and U. K.
Mishra, “Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE,” IEEE
Electron Device Lett., vol. 11, pp. 561-563, 1990.
[95] S. G. Liu, G. C. Taylor, J. Klatskin, R. L. Camisa, and D. R. Capewell,
“High-efficiency GaAs microwave power MESFETs with an n+-n--n doping formed by buried-shallow-implant (BSI),” IEEE Electron Device Lett., vol. 26, pp. 1373-1374, 1990.
[96] Y. J. Chan and M. T. Yang, “Al0.3Ga07As/InxGa1-xAs (0 < x < 0.25) doped-channel field-effect transistors (DCFETs),” IEEE Trans. Electron Devices, Vol. 42, pp. 1745-1749, 1995.
[97] S. J. Yu, W. C. Hsu, Y. J. Chen, and C. L. Wu, “High power and high breakdown delta-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT,” Solid-State Electron., Vol. 50, pp. 291-296, 2006.
[98] J. H. Tsai, D. F. Guo, and W. S. Lour, “Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles,” Semiconductors, vol. 45, pp. 1231, 2011.
[99] J. H. Tsai, W. S. Lour, D. F. Guo, and W. C. Liu, “InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures,” Semiconductors, vol. 44, pp. 1096, 2010.
[100] SILVACO 2000 Atals User’s Manual Editor I, (SILVACO Int. Santa Clara, CA, USA).
[101] J. Hu, X. G. Xu, J. A. H. Stotz, S. P. Watkins, A. E. Curzon, M. L. W.
Thewalt, N. Matine, and C. R. Bolognesi, “Type-II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP
heterostructures grown by metalorganic vapor phase epitaxy,” Appl. Phys.
Lett., vol. 73, pp. 2799, 1998.
[102] P. M. Asbeck, M. F. Chang, K. C. Wang, G. J. Sullivan, and D. T.
Cheung, “GaAs-based heterojunction bipolar transistors for very high performance electronic circuits,” IEEE, vol. 81, pp. 1709-1726, 1993.
Cheung, “GaAs-based heterojunction bipolar transistors for very high performance electronic circuits,” IEEE, vol. 81, pp. 1709-1726, 1993.