In summary, high quality GaN-based LED structure was successfully fabricated and overgrown on GaN NPs template by using MOCVD and MBE. It was found that the residual stress was reduced from 1.33 GPa to 0.44 GPa in GaN epitaxial layer by inserting the GaN NPs. From SEM measurement, a lot of air voids were formed at the interface between the GaN NP and subsequent GaN layer due to re-crystallization. In addition, TEM revealed obvious dislocations-bending behavior above the voids, resulting in low-dislocation density of about 107 cm-2. So we expected nano-structure shows two-folds of the improvement: one in IQE enhancement from better crystal quality and the other in light extraction due to air-void layer. With low temperature PL measurement and 2D FDTD simulation, we can estimate the enhancement brought by each factor (IQE and light extraction) should be 48% and 24%, respectively. Besides, other optical characteristics were analyzed by employing temperature and power dependent PL. Finally, the NP-LEDs exhibit great enhancement of the light output 71% at 20mA compared to the C-LEDs and this is close to the results of IQE measurement and light extraction simulation.
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